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型號(hào)	功能描述	生產(chǎn)廠家企業(yè)	LOGO
NAND01GW3B	512 Mbit, 1 Gbit, 2 Gbit, 4 Gbit, 8 Gbit 2112 Byte/1056 Word Page, 1.8V/3V, NAND Flash Memory FEATURES SUMMARY ■ HIGH DENSITY NAND FLASH MEMORIES – Up to 8 Gbit memory array – Up to 64Mbit spare area – Cost effective solutions for mass storage applications ■ NAND INTERFACE – x8 or x16 bus width – Multiplexed Address/ Data – Pinout compatibility for all densities ■ SUPPLY VOLTAG	STMICROELECTRONICS 意法半導(dǎo)體	STMICROELECTRONICS
NAND01GW3B	USB 2.0 high-speed Flash drive controller 文件：614.48 Kbytes Page：32 Pages	STMICROELECTRONICS 意法半導(dǎo)體	STMICROELECTRONICS
NAND01GW3B	1 Gbit, 2 Gbit, 2112 Byte/1056 Word Page, 1.8V/3V, NAND Flash Memory 文件：631.49 Kbytes Page：64 Pages	STMICROELECTRONICS 意法半導(dǎo)體	STMICROELECTRONICS
NAND01GW3B2BN5E	1-Gbit, 2112-byte/1056-word page, 1.8 V/3 V, single level cell NAND flash memory Features ■ NAND interface – x8 or x16 bus width – Multiplexed address/ data – Pinout compatibility for all densities ■ Supply voltage: 1.8 V/3 V ■ Page size – x8 device: (2048 + 64 spare) bytes – x16 device: (1024 + 32 spare) words ■ Block size – x8 device: (128K + 4K spare) bytes – x16	NUMONYX numonyx	NUMONYX
NAND01GW3B2BN5F	1-Gbit, 2112-byte/1056-word page, 1.8 V/3 V, single level cell NAND flash memory Features ■ NAND interface – x8 or x16 bus width – Multiplexed address/ data – Pinout compatibility for all densities ■ Supply voltage: 1.8 V/3 V ■ Page size – x8 device: (2048 + 64 spare) bytes – x16 device: (1024 + 32 spare) words ■ Block size – x8 device: (128K + 4K spare) bytes – x16	NUMONYX numonyx	NUMONYX
NAND01GW3B2BN6E	1-Gbit, 2112-byte/1056-word page, 1.8 V/3 V, single level cell NAND flash memory Features ■ NAND interface – x8 or x16 bus width – Multiplexed address/ data – Pinout compatibility for all densities ■ Supply voltage: 1.8 V/3 V ■ Page size – x8 device: (2048 + 64 spare) bytes – x16 device: (1024 + 32 spare) words ■ Block size – x8 device: (128K + 4K spare) bytes – x16	NUMONYX numonyx	NUMONYX
NAND01GW3B2BN6F	1-Gbit, 2112-byte/1056-word page, 1.8 V/3 V, single level cell NAND flash memory Features ■ NAND interface – x8 or x16 bus width – Multiplexed address/ data – Pinout compatibility for all densities ■ Supply voltage: 1.8 V/3 V ■ Page size – x8 device: (2048 + 64 spare) bytes – x16 device: (1024 + 32 spare) words ■ Block size – x8 device: (128K + 4K spare) bytes – x16	NUMONYX numonyx	NUMONYX
NAND01GW3B2BZA5E	1-Gbit, 2112-byte/1056-word page, 1.8 V/3 V, single level cell NAND flash memory Features ■ NAND interface – x8 or x16 bus width – Multiplexed address/ data – Pinout compatibility for all densities ■ Supply voltage: 1.8 V/3 V ■ Page size – x8 device: (2048 + 64 spare) bytes – x16 device: (1024 + 32 spare) words ■ Block size – x8 device: (128K + 4K spare) bytes – x16	NUMONYX numonyx	NUMONYX
NAND01GW3B2BZA5F	1-Gbit, 2112-byte/1056-word page, 1.8 V/3 V, single level cell NAND flash memory Features ■ NAND interface – x8 or x16 bus width – Multiplexed address/ data – Pinout compatibility for all densities ■ Supply voltage: 1.8 V/3 V ■ Page size – x8 device: (2048 + 64 spare) bytes – x16 device: (1024 + 32 spare) words ■ Block size – x8 device: (128K + 4K spare) bytes – x16	NUMONYX numonyx	NUMONYX
NAND01GW3B2BZA6E	1-Gbit, 2112-byte/1056-word page, 1.8 V/3 V, single level cell NAND flash memory Features ■ NAND interface – x8 or x16 bus width – Multiplexed address/ data – Pinout compatibility for all densities ■ Supply voltage: 1.8 V/3 V ■ Page size – x8 device: (2048 + 64 spare) bytes – x16 device: (1024 + 32 spare) words ■ Block size – x8 device: (128K + 4K spare) bytes – x16	NUMONYX numonyx	NUMONYX
NAND01GW3B2BZA6F	1-Gbit, 2112-byte/1056-word page, 1.8 V/3 V, single level cell NAND flash memory Features ■ NAND interface – x8 or x16 bus width – Multiplexed address/ data – Pinout compatibility for all densities ■ Supply voltage: 1.8 V/3 V ■ Page size – x8 device: (2048 + 64 spare) bytes – x16 device: (1024 + 32 spare) words ■ Block size – x8 device: (128K + 4K spare) bytes – x16	NUMONYX numonyx	NUMONYX
NAND01GW3B2BZF5E	1-Gbit, 2112-byte/1056-word page, 1.8 V/3 V, single level cell NAND flash memory Features ■ NAND interface – x8 or x16 bus width – Multiplexed address/ data – Pinout compatibility for all densities ■ Supply voltage: 1.8 V/3 V ■ Page size – x8 device: (2048 + 64 spare) bytes – x16 device: (1024 + 32 spare) words ■ Block size – x8 device: (128K + 4K spare) bytes – x16	NUMONYX numonyx	NUMONYX
NAND01GW3B2BZF5F	1-Gbit, 2112-byte/1056-word page, 1.8 V/3 V, single level cell NAND flash memory Features ■ NAND interface – x8 or x16 bus width – Multiplexed address/ data – Pinout compatibility for all densities ■ Supply voltage: 1.8 V/3 V ■ Page size – x8 device: (2048 + 64 spare) bytes – x16 device: (1024 + 32 spare) words ■ Block size – x8 device: (128K + 4K spare) bytes – x16	NUMONYX numonyx	NUMONYX
NAND01GW3B2BZF6E	1-Gbit, 2112-byte/1056-word page, 1.8 V/3 V, single level cell NAND flash memory Features ■ NAND interface – x8 or x16 bus width – Multiplexed address/ data – Pinout compatibility for all densities ■ Supply voltage: 1.8 V/3 V ■ Page size – x8 device: (2048 + 64 spare) bytes – x16 device: (1024 + 32 spare) words ■ Block size – x8 device: (128K + 4K spare) bytes – x16	NUMONYX numonyx	NUMONYX
NAND01GW3B2BZF6F	1-Gbit, 2112-byte/1056-word page, 1.8 V/3 V, single level cell NAND flash memory Features ■ NAND interface – x8 or x16 bus width – Multiplexed address/ data – Pinout compatibility for all densities ■ Supply voltage: 1.8 V/3 V ■ Page size – x8 device: (2048 + 64 spare) bytes – x16 device: (1024 + 32 spare) words ■ Block size – x8 device: (128K + 4K spare) bytes – x16	NUMONYX numonyx	NUMONYX
NAND01GW3B2C	1-Gbit, 2112-byte/1056-word page, 1.8 V/3 V, single level cell NAND flash memory Features ■ NAND interface – x8 or x16 bus width – Multiplexed address/ data – Pinout compatibility for all densities ■ Supply voltage: 1.8 V/3 V ■ Page size – x8 device: (2048 + 64 spare) bytes – x16 device: (1024 + 32 spare) words ■ Block size – x8 device: (128K + 4K spare) bytes – x16	NUMONYX numonyx	NUMONYX
NAND01GW3B2CN5E	1-Gbit, 2112-byte/1056-word page, 1.8 V/3 V, single level cell NAND flash memory Features ■ NAND interface – x8 or x16 bus width – Multiplexed address/ data – Pinout compatibility for all densities ■ Supply voltage: 1.8 V/3 V ■ Page size – x8 device: (2048 + 64 spare) bytes – x16 device: (1024 + 32 spare) words ■ Block size – x8 device: (128K + 4K spare) bytes – x16	NUMONYX numonyx	NUMONYX
NAND01GW3B2CN5F	1-Gbit, 2112-byte/1056-word page, 1.8 V/3 V, single level cell NAND flash memory Features ■ NAND interface – x8 or x16 bus width – Multiplexed address/ data – Pinout compatibility for all densities ■ Supply voltage: 1.8 V/3 V ■ Page size – x8 device: (2048 + 64 spare) bytes – x16 device: (1024 + 32 spare) words ■ Block size – x8 device: (128K + 4K spare) bytes – x16	NUMONYX numonyx	NUMONYX
NAND01GW3B2CN6E	1-Gbit, 2112-byte/1056-word page, 1.8 V/3 V, single level cell NAND flash memory Features ■ NAND interface – x8 or x16 bus width – Multiplexed address/ data – Pinout compatibility for all densities ■ Supply voltage: 1.8 V/3 V ■ Page size – x8 device: (2048 + 64 spare) bytes – x16 device: (1024 + 32 spare) words ■ Block size – x8 device: (128K + 4K spare) bytes – x16	NUMONYX numonyx	NUMONYX
NAND01GW3B2CN6F	1-Gbit, 2112-byte/1056-word page, 1.8 V/3 V, single level cell NAND flash memory Features ■ NAND interface – x8 or x16 bus width – Multiplexed address/ data – Pinout compatibility for all densities ■ Supply voltage: 1.8 V/3 V ■ Page size – x8 device: (2048 + 64 spare) bytes – x16 device: (1024 + 32 spare) words ■ Block size – x8 device: (128K + 4K spare) bytes – x16	NUMONYX numonyx	NUMONYX
NAND01GW3B2CZA5E	1-Gbit, 2112-byte/1056-word page, 1.8 V/3 V, single level cell NAND flash memory Features ■ NAND interface – x8 or x16 bus width – Multiplexed address/ data – Pinout compatibility for all densities ■ Supply voltage: 1.8 V/3 V ■ Page size – x8 device: (2048 + 64 spare) bytes – x16 device: (1024 + 32 spare) words ■ Block size – x8 device: (128K + 4K spare) bytes – x16	NUMONYX numonyx	NUMONYX
NAND01GW3B2CZA5F	1-Gbit, 2112-byte/1056-word page, 1.8 V/3 V, single level cell NAND flash memory Features ■ NAND interface – x8 or x16 bus width – Multiplexed address/ data – Pinout compatibility for all densities ■ Supply voltage: 1.8 V/3 V ■ Page size – x8 device: (2048 + 64 spare) bytes – x16 device: (1024 + 32 spare) words ■ Block size – x8 device: (128K + 4K spare) bytes – x16	NUMONYX numonyx	NUMONYX
NAND01GW3B2CZA6E	1-Gbit, 2112-byte/1056-word page, 1.8 V/3 V, single level cell NAND flash memory Features ■ NAND interface – x8 or x16 bus width – Multiplexed address/ data – Pinout compatibility for all densities ■ Supply voltage: 1.8 V/3 V ■ Page size – x8 device: (2048 + 64 spare) bytes – x16 device: (1024 + 32 spare) words ■ Block size – x8 device: (128K + 4K spare) bytes – x16	NUMONYX numonyx	NUMONYX
NAND01GW3B2CZA6F	1-Gbit, 2112-byte/1056-word page, 1.8 V/3 V, single level cell NAND flash memory Features ■ NAND interface – x8 or x16 bus width – Multiplexed address/ data – Pinout compatibility for all densities ■ Supply voltage: 1.8 V/3 V ■ Page size – x8 device: (2048 + 64 spare) bytes – x16 device: (1024 + 32 spare) words ■ Block size – x8 device: (128K + 4K spare) bytes – x16	NUMONYX numonyx	NUMONYX
NAND01GW3B2CZF5E	1-Gbit, 2112-byte/1056-word page, 1.8 V/3 V, single level cell NAND flash memory Features ■ NAND interface – x8 or x16 bus width – Multiplexed address/ data – Pinout compatibility for all densities ■ Supply voltage: 1.8 V/3 V ■ Page size – x8 device: (2048 + 64 spare) bytes – x16 device: (1024 + 32 spare) words ■ Block size – x8 device: (128K + 4K spare) bytes – x16	NUMONYX numonyx	NUMONYX
NAND01GW3B2CZF5F	1-Gbit, 2112-byte/1056-word page, 1.8 V/3 V, single level cell NAND flash memory Features ■ NAND interface – x8 or x16 bus width – Multiplexed address/ data – Pinout compatibility for all densities ■ Supply voltage: 1.8 V/3 V ■ Page size – x8 device: (2048 + 64 spare) bytes – x16 device: (1024 + 32 spare) words ■ Block size – x8 device: (128K + 4K spare) bytes – x16	NUMONYX numonyx	NUMONYX
NAND01GW3B2CZF6E	1-Gbit, 2112-byte/1056-word page, 1.8 V/3 V, single level cell NAND flash memory Features ■ NAND interface – x8 or x16 bus width – Multiplexed address/ data – Pinout compatibility for all densities ■ Supply voltage: 1.8 V/3 V ■ Page size – x8 device: (2048 + 64 spare) bytes – x16 device: (1024 + 32 spare) words ■ Block size – x8 device: (128K + 4K spare) bytes – x16	NUMONYX numonyx	NUMONYX
NAND01GW3B2CZF6F	1-Gbit, 2112-byte/1056-word page, 1.8 V/3 V, single level cell NAND flash memory Features ■ NAND interface – x8 or x16 bus width – Multiplexed address/ data – Pinout compatibility for all densities ■ Supply voltage: 1.8 V/3 V ■ Page size – x8 device: (2048 + 64 spare) bytes – x16 device: (1024 + 32 spare) words ■ Block size – x8 device: (128K + 4K spare) bytes – x16	NUMONYX numonyx	NUMONYX
NAND01GW3B2AN1	1 Gbit, 2 Gbit, 2112 Byte/1056 Word Page, 1.8V/3V, NAND Flash Memory 文件：631.49 Kbytes Page：64 Pages	STMICROELECTRONICS 意法半導(dǎo)體	STMICROELECTRONICS
NAND01GW3B2AN6	1 Gbit, 2 Gbit, 2112 Byte/1056 Word Page, 1.8V/3V, NAND Flash Memory 文件：631.49 Kbytes Page：64 Pages	STMICROELECTRONICS 意法半導(dǎo)體	STMICROELECTRONICS
NAND01GW3B2AN6F	封裝/外殼：48-TFSOP（0.724"，18.40mm 寬）包裝：托盤(pán) 描述：IC FLASH 1GBIT PARALLEL 48TSOP 集成電路（IC）存儲(chǔ)器	STMICROELECTRONICS 意法半導(dǎo)體	STMICROELECTRONICS
NAND01GW3B2AN6F	IC FLASH 1G PARALLEL 48TSOP	STMICROELECTRONICS 意法半導(dǎo)體	STMICROELECTRONICS
NAND01GW3B2AZA1	1 Gbit, 2 Gbit, 2112 Byte/1056 Word Page, 1.8V/3V, NAND Flash Memory 文件：631.49 Kbytes Page：64 Pages	STMICROELECTRONICS 意法半導(dǎo)體	STMICROELECTRONICS
NAND01GW3B2AZA6	1 Gbit, 2 Gbit, 2112 Byte/1056 Word Page, 1.8V/3V, NAND Flash Memory 文件：631.49 Kbytes Page：64 Pages	STMICROELECTRONICS 意法半導(dǎo)體	STMICROELECTRONICS
NAND01GW3B2AZA6E	IC FLASH 1G PARALLEL 63VFBGA	STMICROELECTRONICS 意法半導(dǎo)體	STMICROELECTRONICS
NAND01GW3B2AZA6E	封裝/外殼：63-TFBGA 包裝：托盤(pán) 描述：IC FLASH 1GBIT PARALLEL 63VFBGA 集成電路（IC）存儲(chǔ)器	STMICROELECTRONICS 意法半導(dǎo)體	STMICROELECTRONICS
NAND01GW3B2AZB1	1 Gbit, 2 Gbit, 2112 Byte/1056 Word Page, 1.8V/3V, NAND Flash Memory 文件：631.49 Kbytes Page：64 Pages	STMICROELECTRONICS 意法半導(dǎo)體	STMICROELECTRONICS
NAND01GW3B2AZB6	1 Gbit, 2 Gbit, 2112 Byte/1056 Word Page, 1.8V/3V, NAND Flash Memory 文件：631.49 Kbytes Page：64 Pages	STMICROELECTRONICS 意法半導(dǎo)體	STMICROELECTRONICS
NAND01GW3B2B	1 Gbit, 2 Gbit, 2112 Byte/1056 Word Page, 1.8V/3V, NAND Flash Memory 文件：711.53 Kbytes Page：62 Pages	STMICROELECTRONICS 意法半導(dǎo)體	STMICROELECTRONICS
NAND01GW3B2BN1	1 Gbit, 2 Gbit, 2112 Byte/1056 Word Page, 1.8V/3V, NAND Flash Memory 文件：631.49 Kbytes Page：64 Pages	STMICROELECTRONICS 意法半導(dǎo)體	STMICROELECTRONICS
NAND01GW3B2BN1E	1 Gbit, 2 Gbit, 2112 Byte/1056 Word Page, 1.8V/3V, NAND Flash Memory 文件：711.53 Kbytes Page：62 Pages	STMICROELECTRONICS 意法半導(dǎo)體	STMICROELECTRONICS
NAND01GW3B2BN1E	1-Gbit, 2-Gbit, 2112-byte/1056-word page, 1.8 V/3 V, NAND flash memory 文件：1.34162 Mbytes Page：60 Pages	NUMONYX numonyx	NUMONYX
NAND01GW3B2BN1F	1-Gbit, 2-Gbit, 2112-byte/1056-word page, 1.8 V/3 V, NAND flash memory 文件：1.34162 Mbytes Page：60 Pages	NUMONYX numonyx	NUMONYX
NAND01GW3B2BN1F	1 Gbit, 2 Gbit, 2112 Byte/1056 Word Page, 1.8V/3V, NAND Flash Memory 文件：711.53 Kbytes Page：62 Pages	STMICROELECTRONICS 意法半導(dǎo)體	STMICROELECTRONICS
NAND01GW3B2BN6	1 Gbit, 2 Gbit, 2112 Byte/1056 Word Page, 1.8V/3V, NAND Flash Memory 文件：631.49 Kbytes Page：64 Pages	STMICROELECTRONICS 意法半導(dǎo)體	STMICROELECTRONICS
NAND01GW3B2BN6E	1 Gbit, 2 Gbit, 2112 Byte/1056 Word Page, 1.8V/3V, NAND Flash Memory 文件：711.53 Kbytes Page：62 Pages	STMICROELECTRONICS 意法半導(dǎo)體	STMICROELECTRONICS
NAND01GW3B2BN6E	1-Gbit, 2-Gbit, 2112-byte/1056-word page, 1.8 V/3 V, NAND flash memory 文件：1.34162 Mbytes Page：60 Pages	NUMONYX numonyx	NUMONYX
NAND01GW3B2BN6E.	1-Gbit, 2-Gbit, 2112-byte/1056-word page, 1.8 V/3 V, NAND flash memory 文件：1.34162 Mbytes Page：60 Pages	NUMONYX numonyx	NUMONYX
NAND01GW3B2BN6F	1-Gbit, 2-Gbit, 2112-byte/1056-word page, 1.8 V/3 V, NAND flash memory 文件：1.34162 Mbytes Page：60 Pages	NUMONYX numonyx	NUMONYX
NAND01GW3B2BN6F	1 Gbit, 2 Gbit, 2112 Byte/1056 Word Page, 1.8V/3V, NAND Flash Memory 文件：711.53 Kbytes Page：62 Pages	STMICROELECTRONICS 意法半導(dǎo)體	STMICROELECTRONICS
NAND01GW3B2BZA1	1 Gbit, 2 Gbit, 2112 Byte/1056 Word Page, 1.8V/3V, NAND Flash Memory 文件：631.49 Kbytes Page：64 Pages	STMICROELECTRONICS 意法半導(dǎo)體	STMICROELECTRONICS
NAND01GW3B2BZA1E	1-Gbit, 2-Gbit, 2112-byte/1056-word page, 1.8 V/3 V, NAND flash memory 文件：1.34162 Mbytes Page：60 Pages	NUMONYX numonyx	NUMONYX
NAND01GW3B2BZA1E	1 Gbit, 2 Gbit, 2112 Byte/1056 Word Page, 1.8V/3V, NAND Flash Memory 文件：711.53 Kbytes Page：62 Pages	STMICROELECTRONICS 意法半導(dǎo)體	STMICROELECTRONICS
NAND01GW3B2BZA1F	1 Gbit, 2 Gbit, 2112 Byte/1056 Word Page, 1.8V/3V, NAND Flash Memory 文件：711.53 Kbytes Page：62 Pages	STMICROELECTRONICS 意法半導(dǎo)體	STMICROELECTRONICS
NAND01GW3B2BZA1F	1-Gbit, 2-Gbit, 2112-byte/1056-word page, 1.8 V/3 V, NAND flash memory 文件：1.34162 Mbytes Page：60 Pages	NUMONYX numonyx	NUMONYX
NAND01GW3B2BZA6	1 Gbit, 2 Gbit, 2112 Byte/1056 Word Page, 1.8V/3V, NAND Flash Memory 文件：631.49 Kbytes Page：64 Pages	STMICROELECTRONICS 意法半導(dǎo)體	STMICROELECTRONICS
NAND01GW3B2BZA6E	1 Gbit, 2 Gbit, 2112 Byte/1056 Word Page, 1.8V/3V, NAND Flash Memory 文件：711.53 Kbytes Page：62 Pages	STMICROELECTRONICS 意法半導(dǎo)體	STMICROELECTRONICS
NAND01GW3B2BZA6E	1-Gbit, 2-Gbit, 2112-byte/1056-word page, 1.8 V/3 V, NAND flash memory 文件：1.34162 Mbytes Page：60 Pages	NUMONYX numonyx	NUMONYX
NAND01GW3B2BZA6E	IC FLASH 1G PARALLEL 63VFBGA	Micron 美光	Micron
NAND01GW3B2BZA6F	1-Gbit, 2-Gbit, 2112-byte/1056-word page, 1.8 V/3 V, NAND flash memory 文件：1.34162 Mbytes Page：60 Pages	NUMONYX numonyx	NUMONYX

NAND01GW3B產(chǎn)品屬性

類(lèi)型
描述
型號(hào)
NAND01GW3B
制造商
STMICROELECTRONICS
制造商全稱(chēng)
STMicroelectronics
功能描述
1 Gbit, 2 Gbit, 2112 Byte/1056 Word Page, 1.8V/3V, NAND Flash Memory

NAND01GW3B供應(yīng)商更多...

更新時(shí)間：2025-9-11 14:43:00

IC供應(yīng)商	芯片型號(hào)	品牌	批號(hào)	封裝	庫(kù)存	備注	價(jià)格
深圳市富芯樂(lè)電子科技有限公司	NAND01GW3B2BN6E	ST	24+	TSOP-48	9500	全新原裝現(xiàn)貨特價(jià)銷(xiāo)售,歡迎來(lái)電查詢(xún)	詢(xún)價(jià)
深圳市美思瑞電子科技有限公司	NAND01GW3B2AN6	ST	22+	TSOP-48	12245	現(xiàn)貨,原廠原裝假一罰十!	詢(xún)價(jià)
深圳市華康聯(lián)電子科技有限公司	NAND01GW3B2AN6E	ST/意法	23+	TSOP	98900	原廠原裝正品現(xiàn)貨!!	詢(xún)價(jià)
深圳市華睿芯科技有限公司	NAND01GW3B2AN6E	ST	24+	TSSOP	20000	全新原廠原裝，進(jìn)口正品現(xiàn)貨，正規(guī)渠道可含稅??！	詢(xún)價(jià)
千層芯半導(dǎo)體(深圳)有限公司	NAND01GW3B2CZA6F	MICRON	24+	BGA	1000	MICRON專(zhuān)營(yíng)原裝進(jìn)口現(xiàn)貨	詢(xún)價(jià)
深圳市諾美思科技有限公司	NAND01GW3B2AN6	SST		原廠封裝	9800	原裝進(jìn)口公司現(xiàn)貨假一賠百	詢(xún)價(jià)
深圳市力拓輝電子有限公司	NAND01GW3B2CN6	NUMONYX	21+	TSOP48	5760	全新原裝鄙視假貨	詢(xún)價(jià)
深圳市近平電子有限公司	NAND01GW3B2A	-	6000	面議	19	QFP	詢(xún)價(jià)
中天科工半導(dǎo)體（深圳）有限公司	NAND01GW3B2CN6E	MICRON/美光	25+	N/A	12496	MICRON/美光原裝正品NAND01GW3B2CN6E即刻詢(xún)購(gòu)立享優(yōu)惠#長(zhǎng)期有貨	詢(xún)價(jià)
深圳市賽特興科技有限公司	NAND01GW3B2AE06(TAIWAN)D/C:05	ST	23+	原廠原封	16900	正規(guī)渠道,只有原裝!	詢(xún)價(jià)

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NAR105
NAPA-34
NANO842
NANO840
NANO831
NANO830
NANO800
NANO600
NANO400
NANO130
NANO120
NANO103
NANO102
NANO101
NANO100
nand閃存
NAND01GW3B2BZA6
NAND01GW3B2BZA1F
NAND01GW3B2BZA1E
NAND01GW3B2BZA1
NAND01GW3B2BNDE
NAND01GW3B2BND
NAND01GW3B2BN6F
NAND01GW3B2BN6E
NAND01GW3B2BN6
NAND01GW3B2BE06
NAND01GW3B2AZA6F
NAND01GW3B2AZA6E
NAND01GW3B2AZA6
NAND01GW3B2AZA1
NAND01GW3B2AN6T
NAND01GW3B2AN6F
NAND01GW3B2AN6E
NAND01GW3B2AN6
NAND01GW3B2AN1
NAND01GW3B2AE06
NAND01GW3A2CZB6T
NAND01GW3A2CZB6F
NAND01GW3A2CZB6E
NAND01GW3A2CZB6
NAND01GW3A2CZB1T
NAND01GW3A2CZB1F
NAND01GW3A2CZB1E
NAND01GW3A2CZB1
NAND01GW3A2CZA6T
NAND01GW3A2CZA6F
NAND01GW3A2CZA6E
NAND01GW3A2CZA6
NAND01GW3A2CZA1T
NAND01GW3A2CZA1F
NAND01GW3A2CZA1E
NAND01GW3A2CZA1
NAND01GW3A2CV6T
NAND01GW3A2CV6F
NAND01GW3A2CV6E
NAND01GW3A2CV6
NAN55
NAN40
NAL40
NAL25
N-A-JJ
NAG143P
NAG141P
NAG107P
NAG105P
NAF-BSG
NADB9MF
NADB9FF
NACZF
NACZ_14
NACY_14
NACX_14
NACVF
NACV_14
NACS500
NACS400

NAND01GW3B數(shù)據(jù)表相關(guān)新聞

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NAC3PX-TOP
2024-6-28
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2021-9-14
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NANOSMDM050F/13.2，NAS1004-3A，NAS1057T0-009
2020-5-8
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2020-4-19
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