位置:NAND01GW3B2CZA5F > NAND01GW3B2CZA5F詳情
NAND01GW3B2CZA5F中文資料
NAND01GW3B2CZA5F數(shù)據(jù)手冊規(guī)格書PDF詳情
Features
■ NAND interface
– x8 or x16 bus width
– Multiplexed address/ data
– Pinout compatibility for all densities
■ Supply voltage: 1.8 V/3 V
■ Page size
– x8 device: (2048 + 64 spare) bytes
– x16 device: (1024 + 32 spare) words
■ Block size
– x8 device: (128K + 4K spare) bytes
– x16 device: (64K + 2K spare) words
■ Page read/program
– Random access: 25 μs (max)
– Sequential access: 25 ns (min)
– Page program time: 200 μs (typ)
■ Copy back program mode
■ Cache read mode
■ Fast block erase: 2 ms (typ)
■ Status register
■ Electronic signature
■ Chip enable ‘don’t care’
■ Security features
– OTP area
– Serial number (unique ID)
– Non-volatile protection option
■ Data protection
– Hardware block locking
– Hardware program/erase locked during
power transitions
■ ONFI 1.0 support
– Cache read
– Read signature
– Read
■ Data integrity
– 100,000 program/erase cycles per block
(with ECC)
– 10 years data retention
■ RoHS compliant packages
■ Development tools
– Error correction code models
– Bad blocks management and wear leveling
algorithms
– Hardware simulation models
供應(yīng)商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
---|---|---|---|---|---|---|---|
Numonyx |
23+ |
VFBGA63 |
7500 |
絕對全新原裝!優(yōu)勢供貨渠道!特價!請放心訂購! |
|||
ST |
17+ |
. |
6200 |
100%原裝正品現(xiàn)貨 |
|||
原廠正品 |
23+ |
VFBGA63 |
8000 |
原裝正品,假一罰十 |
|||
ST |
2016+ |
BGA |
9000 |
只做原裝,假一罰十,公司可開17%增值稅發(fā)票! |
|||
Micron(ST) |
1716+ |
BGA63 |
7500 |
只做原裝進(jìn)口,假一罰十 |
|||
ST |
23+ |
BGA |
8890 |
價格優(yōu)勢/原裝現(xiàn)貨/客戶至上/歡迎廣大客戶來電查詢 |
|||
ST/MICR |
1735+ |
BGA |
6528 |
科恒偉業(yè)!只做原裝正品!假一賠十! |
|||
ST/MICR |
18+ |
BGA |
85600 |
保證進(jìn)口原裝可開17%增值稅發(fā)票 |
|||
ST |
19+ |
BGA |
32000 |
原裝正品,現(xiàn)貨特價 |
|||
ST |
24+ |
BGA |
20000 |
全新原廠原裝,進(jìn)口正品現(xiàn)貨,正規(guī)渠道可含稅?。?/div> |
NAND01GW3B2CZA5F 資料下載更多...
NAND01GW3B2CZA5F 芯片相關(guān)型號
- 1.5KE440C
- 1440151
- 1440164
- 1440177
- 1440180
- 3KP58A
- 9001SKYP10
- 9001SKYP2
- 9001SKYP4
- 9001SKYP6
- 9001SKYP8
- ATS-18E-123-C2-R0
- BU7442F
- BU7442FVM
- CLB0AB59R1K1000TC1
- CLB0AB59R1K1000TC1_V01
- JM38510/11905BPA
- NAND01GW3B2CZA5E
- NAND01GW3B2CZA6E
- NAND01GW3B2CZA6F
- NAND01GW3B2CZF5E
- NAND01GW3B2CZF5F
- NAND01GW3B2CZF6E
- NAND01GW3B2CZF6F
- NC7SV08FHX
- NC7SV08L6X
- NUC472-KI8E
- NUC472-KI8N
Datasheet數(shù)據(jù)表PDF頁碼索引
- P1
- P2
- P3
- P4
- P5
- P6
- P7
- P8
- P9
- P10
- P11
- P12
- P13
- P14
- P15
- P16
- P17
- P18
- P19
- P20
- P21
- P22
- P23
- P24
- P25
- P26
- P27
- P28
- P29
- P30
- P31
- P32
- P33
- P34
- P35
- P36
- P37
- P38
- P39
- P40
- P41
- P42
- P43
- P44
- P45
- P46
- P47
- P48
- P49
- P50
- P51
- P52
- P53
- P54
- P55
- P56
- P57
- P58
- P59
- P60
- P61
- P62
- P63
- P64
- P65
- P66
- P67
- P68
- P69
- P70
- P71
- P72
- P73
- P74
- P75
- P76
- P77
- P78
- P79
- P80
- P81
- P82
- P83
- P84
- P85
- P86
- P87
- P88
- P89
- P90
- P91
- P92
- P93
- P94
- P95
- P96
- P97
- P98
- P99
- P100
- P101
- P102
numonyx
Numonyx是一家曾經(jīng)存在的存儲技術(shù)公司,于2008年由英特爾(Intel)和STMicroelectronics共同創(chuàng)立。Numonyx專注于非易失性存儲器(NVM)技術(shù)和閃存存儲器技術(shù),為客戶提供各種存儲解決方案和產(chǎn)品。 Numonyx的產(chǎn)品包括閃存存儲器、嵌入式存儲器、非易失性存儲器等,在計算機、消費電子、通信、汽車等領(lǐng)域得到廣泛應(yīng)用。公司致力于技術(shù)創(chuàng)新與研發(fā),不斷提升產(chǎn)品性能、可靠性和創(chuàng)新性,以滿足客戶不斷增長的需求。 2010年,美國存儲技術(shù)公司Micron Technology收購了Numonyx,并將其整合為Micron的一部分。這一收購使Micron得以拓展其存儲技術(shù)領(lǐng)域的產(chǎn)