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型號(hào) 功能描述 生產(chǎn)廠家&企業(yè) LOGO 操作
IS43DR16640B-25EBLI

1Gb (x8, x16) DDR2 SDRAM

FEATURES ? Clock frequency up to 400MHz ? 8 internal banks for concurrent operation ? 4‐bit prefetch architecture ? Programmable CAS Latency: 3, 4, 5, 6 and 7 ? Programmable Additive Latency: 0, 1, 2, 3, 4, 5 and 6 ? Write Latency = Read Latency‐1 ? Programmable Burst Sequence: Sequential

ISSI

矽成半導(dǎo)體

IS43DR16640B-25EBLI

封裝/外殼：84-TFBGA 包裝：卷帶（TR） 描述：IC DRAM 1GBIT PARALLEL 84TWBGA 集成電路（IC） 存儲(chǔ)器

ETC

知名廠家

封裝/外殼：84-TFBGA 包裝：卷帶（TR） 描述：IC DRAM 1GBIT PARALLEL 84TWBGA 集成電路（IC） 存儲(chǔ)器

ETC

知名廠家

1Gb (x8, x16) DDR2 SDRAM

FEATURES ? Clock frequency up to 400MHz ? 8 internal banks for concurrent operation ? 4‐bit prefetch architecture ? Programmable CAS Latency: 3, 4, 5, 6 and 7 ? Programmable Additive Latency: 0, 1, 2, 3, 4, 5 and 6 ? Write Latency = Read Latency‐1 ? Programmable Burst Sequence: Sequential

ISSI

矽成半導(dǎo)體

1Gb (x8, x16) DDR2 SDRAM

FEATURES ? Clock frequency up to 400MHz ? 8 internal banks for concurrent operation ? 4‐bit prefetch architecture ? Programmable CAS Latency: 3, 4, 5, 6 and 7 ? Programmable Additive Latency: 0, 1, 2, 3, 4, 5 and 6 ? Write Latency = Read Latency‐1 ? Programmable Burst Sequence: Sequential

ISSI

矽成半導(dǎo)體

1Gb (x8, x16) DDR2 SDRAM

FEATURES ? Clock frequency up to 400MHz ? 8 internal banks for concurrent operation ? 4‐bit prefetch architecture ? Programmable CAS Latency: 3, 4, 5, 6 and 7 ? Programmable Additive Latency: 0, 1, 2, 3, 4, 5 and 6 ? Write Latency = Read Latency‐1 ? Programmable Burst Sequence: Sequential

ISSI

矽成半導(dǎo)體

1Gb (x8, x16) DDR2 SDRAM

FEATURES ? Clock frequency up to 400MHz ? 8 internal banks for concurrent operation ? 4‐bit prefetch architecture ? Programmable CAS Latency: 3, 4, 5, 6 and 7 ? Programmable Additive Latency: 0, 1, 2, 3, 4, 5 and 6 ? Write Latency = Read Latency‐1 ? Programmable Burst Sequence: Sequential

ISSI

矽成半導(dǎo)體

IS43DR16640B-25EBLI產(chǎn)品屬性

  • 類型

    描述

  • 型號(hào)

    IS43DR16640B-25EBLI

  • 功能描述

    動(dòng)態(tài)隨機(jī)存取存儲(chǔ)器 1G(64Mx16) 400MHz DDR2 1.8v

  • RoHS

    否

  • 制造商

    ISSI

  • 數(shù)據(jù)總線寬度

    16 bit

  • 組織

    1 M x 16

  • 封裝/箱體

    SOJ-42

  • 存儲(chǔ)容量

    16 MB

  • 訪問時(shí)間

    50 ns

  • 電源電壓-最大

    7 V

  • 電源電壓-最小

    - 1 V

  • 最大工作電流

    90 mA

  • 最大工作溫度

    + 85 C

  • 封裝

    Tube

更新時(shí)間：2025-9-10 23:01:00
IC供應(yīng)商 芯片型號(hào) 品牌 批號(hào) 封裝 庫存 備注 價(jià)格
ISSI
24+
NA/
4099
原裝現(xiàn)貨,當(dāng)天可交貨,原型號(hào)開票
ISSI
2014
BGA
849
原裝現(xiàn)貨支持BOM配單服務(wù)
ISSI,
25+
25000
原廠原包 深圳現(xiàn)貨 主打品牌 假一賠百 可開票!
ISSI, Integrated Silicon Solut
21+
BGA
5280
進(jìn)口原裝!長期供應(yīng)!絕對(duì)優(yōu)勢價(jià)格(誠信經(jīng)營
ISSI Integrated Silicon Solut
25+
84-TFBGA
9350
獨(dú)立分銷商 公司只做原裝 誠心經(jīng)營 免費(fèi)試樣正品保證
ISSI/芯成
24+
BGA
22055
鄭重承諾只做原裝進(jìn)口現(xiàn)貨
ISSI
2014
BGA
854
現(xiàn)貨庫存/價(jià)格優(yōu)惠熱賣
ISSI Integrated Silicon Soluti
22+
84TWBGA (8x12.5)
9000
原廠渠道,現(xiàn)貨配單
ISSI
24+
BGA
9600
原裝現(xiàn)貨,優(yōu)勢供應(yīng),支持實(shí)單!
ISSI
21+
BGA
10000
原裝現(xiàn)貨假一罰十

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