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1Gb (x8, x16) DDR2 SDRAM

FEATURES ? Clock frequency up to 400MHz ? 8 internal banks for concurrent operation ? 4‐bit prefetch architecture ? Programmable CAS Latency: 3, 4, 5, 6 and 7 ? Programmable Additive Latency: 0, 1, 2, 3, 4, 5 and 6 ? Write Latency = Read Latency‐1 ? Programmable Burst Sequence: Sequential

封裝/外殼：84-TFBGA 包裝：卷帶（TR）剪切帶（CT）Digi-Reel? 得捷定制卷帶 描述：IC DRAM 1G PARALLEL 84WBGA 集成電路（IC） 存儲器

1Gb (x8, x16) DDR2 SDRAM

FEATURES ? Clock frequency up to 400MHz ? 8 internal banks for concurrent operation ? 4‐bit prefetch architecture ? Programmable CAS Latency: 3, 4, 5, 6 and 7 ? Programmable Additive Latency: 0, 1, 2, 3, 4, 5 and 6 ? Write Latency = Read Latency‐1 ? Programmable Burst Sequence: Sequential

封裝/外殼：84-TFBGA 包裝：卷帶（TR） 描述：IC DRAM 1GBIT PARALLEL 84TWBGA 集成電路（IC） 存儲器

1Gb (x8, x16) DDR2 SDRAM

FEATURES ? Clock frequency up to 400MHz ? 8 internal banks for concurrent operation ? 4‐bit prefetch architecture ? Programmable CAS Latency: 3, 4, 5, 6 and 7 ? Programmable Additive Latency: 0, 1, 2, 3, 4, 5 and 6 ? Write Latency = Read Latency‐1 ? Programmable Burst Sequence: Sequential

1Gb (x8, x16) DDR2 SDRAM

FEATURES ? Clock frequency up to 400MHz ? 8 internal banks for concurrent operation ? 4‐bit prefetch architecture ? Programmable CAS Latency: 3, 4, 5, 6 and 7 ? Programmable Additive Latency: 0, 1, 2, 3, 4, 5 and 6 ? Write Latency = Read Latency‐1 ? Programmable Burst Sequence: Sequential

1Gb (x8, x16) DDR2 SDRAM

FEATURES ? Clock frequency up to 400MHz ? 8 internal banks for concurrent operation ? 4‐bit prefetch architecture ? Programmable CAS Latency: 3, 4, 5, 6 and 7 ? Programmable Additive Latency: 0, 1, 2, 3, 4, 5 and 6 ? Write Latency = Read Latency‐1 ? Programmable Burst Sequence: Sequential