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IS43DR16640B-25DBLI價(jià)格

參考價(jià)格:¥42.8064

型號(hào):IS43DR16640B-25DBLI 品牌:ISSI 備注:這里有IS43DR16640B-25DBLI多少錢,2025年最近7天走勢(shì),今日出價(jià),今日競(jìng)價(jià),IS43DR16640B-25DBLI批發(fā)/采購(gòu)報(bào)價(jià),IS43DR16640B-25DBLI行情走勢(shì)銷售排行榜,IS43DR16640B-25DBLI報(bào)價(jià)。
型號(hào) 功能描述 生產(chǎn)廠家&企業(yè) LOGO 操作
IS43DR16640B-25DBLI

1Gb (x8, x16) DDR2 SDRAM

FEATURES ? Clock frequency up to 400MHz ? 8 internal banks for concurrent operation ? 4‐bit prefetch architecture ? Programmable CAS Latency: 3, 4, 5, 6 and 7 ? Programmable Additive Latency: 0, 1, 2, 3, 4, 5 and 6 ? Write Latency = Read Latency‐1 ? Programmable Burst Sequence: Sequential

ISSI

矽成半導(dǎo)體

IS43DR16640B-25DBLI

封裝/外殼:84-TFBGA 包裝:托盤 描述:IC DRAM 1G PARALLEL 84WBGA 集成電路(IC) 存儲(chǔ)器

ETC

知名廠家

封裝/外殼:84-TFBGA 包裝:卷帶(TR) 描述:IC DRAM 1GBIT PARALLEL 84TWBGA 集成電路(IC) 存儲(chǔ)器

ETC

知名廠家

1Gb (x8, x16) DDR2 SDRAM

FEATURES ? Clock frequency up to 400MHz ? 8 internal banks for concurrent operation ? 4‐bit prefetch architecture ? Programmable CAS Latency: 3, 4, 5, 6 and 7 ? Programmable Additive Latency: 0, 1, 2, 3, 4, 5 and 6 ? Write Latency = Read Latency‐1 ? Programmable Burst Sequence: Sequential

ISSI

矽成半導(dǎo)體

1Gb (x8, x16) DDR2 SDRAM

FEATURES ? Clock frequency up to 400MHz ? 8 internal banks for concurrent operation ? 4‐bit prefetch architecture ? Programmable CAS Latency: 3, 4, 5, 6 and 7 ? Programmable Additive Latency: 0, 1, 2, 3, 4, 5 and 6 ? Write Latency = Read Latency‐1 ? Programmable Burst Sequence: Sequential

ISSI

矽成半導(dǎo)體

1Gb (x8, x16) DDR2 SDRAM

FEATURES ? Clock frequency up to 400MHz ? 8 internal banks for concurrent operation ? 4‐bit prefetch architecture ? Programmable CAS Latency: 3, 4, 5, 6 and 7 ? Programmable Additive Latency: 0, 1, 2, 3, 4, 5 and 6 ? Write Latency = Read Latency‐1 ? Programmable Burst Sequence: Sequential

ISSI

矽成半導(dǎo)體

1Gb (x8, x16) DDR2 SDRAM

FEATURES ? Clock frequency up to 400MHz ? 8 internal banks for concurrent operation ? 4‐bit prefetch architecture ? Programmable CAS Latency: 3, 4, 5, 6 and 7 ? Programmable Additive Latency: 0, 1, 2, 3, 4, 5 and 6 ? Write Latency = Read Latency‐1 ? Programmable Burst Sequence: Sequential

ISSI

矽成半導(dǎo)體

IS43DR16640B-25DBLI產(chǎn)品屬性

  • 類型

    描述

  • 型號(hào)

    IS43DR16640B-25DBLI

  • 功能描述

    動(dòng)態(tài)隨機(jī)存取存儲(chǔ)器 1G(64Mx16) 400MHz DDR2 1.8v

  • RoHS

  • 制造商

    ISSI

  • 數(shù)據(jù)總線寬度

    16 bit

  • 組織

    1 M x 16

  • 封裝/箱體

    SOJ-42

  • 存儲(chǔ)容量

    16 MB

  • 訪問(wèn)時(shí)間

    50 ns

  • 電源電壓-最大

    7 V

  • 電源電壓-最小

    - 1 V

  • 最大工作電流

    90 mA

  • 最大工作溫度

    + 85 C

  • 封裝

    Tube

更新時(shí)間:2025-9-10 23:00:00
IC供應(yīng)商 芯片型號(hào) 品牌 批號(hào) 封裝 庫(kù)存 備注 價(jià)格
ISSI(美國(guó)芯成)
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原廠原裝正品現(xiàn)貨,代理渠道,支持訂貨!!!
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一級(jí)代理,專注軍工、汽車、醫(yī)療、工業(yè)、新能源、電力
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只做原裝,一定有貨,不止網(wǎng)上數(shù)量,量多可訂貨!
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BGA84
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十年沉淀唯有原裝
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ROHS+Original
NA
400
專業(yè)電子元器件供應(yīng)鏈/QQ 350053121 /正納電子
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23+
BGAQFP
8659
原裝公司現(xiàn)貨!原裝正品價(jià)格優(yōu)勢(shì).
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全新原裝正品,現(xiàn)貨銷售

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