位置:首頁 > IC中文資料第12831頁 > IS43DR16640B-25EBL
型號 | 功能描述 | 生產(chǎn)廠家&企業(yè) | LOGO | 操作 |
---|---|---|---|---|
IS43DR16640B-25EBL | 1Gb (x8, x16) DDR2 SDRAM FEATURES ? Clock frequency up to 400MHz ? 8 internal banks for concurrent operation ? 4‐bit prefetch architecture ? Programmable CAS Latency: 3, 4, 5, 6 and 7 ? Programmable Additive Latency: 0, 1, 2, 3, 4, 5 and 6 ? Write Latency = Read Latency‐1 ? Programmable Burst Sequence: Sequential | ISSI 矽成半導體 | ||
IS43DR16640B-25EBL | 封裝/外殼:84-TFBGA 包裝:卷帶(TR) 描述:IC DRAM 1GBIT PARALLEL 84TWBGA 集成電路(IC) 存儲器 | ETC 知名廠家 | ETC | |
1Gb (x8, x16) DDR2 SDRAM FEATURES ? Clock frequency up to 400MHz ? 8 internal banks for concurrent operation ? 4‐bit prefetch architecture ? Programmable CAS Latency: 3, 4, 5, 6 and 7 ? Programmable Additive Latency: 0, 1, 2, 3, 4, 5 and 6 ? Write Latency = Read Latency‐1 ? Programmable Burst Sequence: Sequential | ISSI 矽成半導體 | |||
封裝/外殼:84-TFBGA 包裝:卷帶(TR) 描述:IC DRAM 1GBIT PARALLEL 84TWBGA 集成電路(IC) 存儲器 | ETC 知名廠家 | ETC | ||
1Gb (x8, x16) DDR2 SDRAM FEATURES ? Clock frequency up to 400MHz ? 8 internal banks for concurrent operation ? 4‐bit prefetch architecture ? Programmable CAS Latency: 3, 4, 5, 6 and 7 ? Programmable Additive Latency: 0, 1, 2, 3, 4, 5 and 6 ? Write Latency = Read Latency‐1 ? Programmable Burst Sequence: Sequential | ISSI 矽成半導體 | |||
1Gb (x8, x16) DDR2 SDRAM FEATURES ? Clock frequency up to 400MHz ? 8 internal banks for concurrent operation ? 4‐bit prefetch architecture ? Programmable CAS Latency: 3, 4, 5, 6 and 7 ? Programmable Additive Latency: 0, 1, 2, 3, 4, 5 and 6 ? Write Latency = Read Latency‐1 ? Programmable Burst Sequence: Sequential | ISSI 矽成半導體 | |||
1Gb (x8, x16) DDR2 SDRAM FEATURES ? Clock frequency up to 400MHz ? 8 internal banks for concurrent operation ? 4‐bit prefetch architecture ? Programmable CAS Latency: 3, 4, 5, 6 and 7 ? Programmable Additive Latency: 0, 1, 2, 3, 4, 5 and 6 ? Write Latency = Read Latency‐1 ? Programmable Burst Sequence: Sequential | ISSI 矽成半導體 |
IS43DR16640B-25EBL產(chǎn)品屬性
- 類型
描述
- 型號
IS43DR16640B-25EBL
- 功能描述
動態(tài)隨機存取存儲器 1G(64Mx16) 400MHz DDR2 1.8v
- RoHS
否
- 制造商
ISSI
- 數(shù)據(jù)總線寬度
16 bit
- 組織
1 M x 16
- 封裝/箱體
SOJ-42
- 存儲容量
16 MB
- 訪問時間
50 ns
- 電源電壓-最大
7 V
- 電源電壓-最小
- 1 V
- 最大工作電流
90 mA
- 最大工作溫度
+ 85 C
- 封裝
Tube
IC供應(yīng)商 | 芯片型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
---|---|---|---|---|---|---|---|
ISSI |
24+ |
NA/ |
4099 |
原裝現(xiàn)貨,當天可交貨,原型號開票 |
|||
ISSI |
2014 |
BGA |
849 |
原裝現(xiàn)貨支持BOM配單服務(wù) |
|||
ISSI, |
25+ |
25000 |
原廠原包 深圳現(xiàn)貨 主打品牌 假一賠百 可開票! |
||||
ISSI, Integrated Silicon Solut |
21+ |
BGA |
5280 |
進口原裝!長期供應(yīng)!絕對優(yōu)勢價格(誠信經(jīng)營 |
|||
ISSI Integrated Silicon Solut |
25+ |
84-TFBGA |
9350 |
獨立分銷商 公司只做原裝 誠心經(jīng)營 免費試樣正品保證 |
|||
ISSI |
2025+ |
BGA-84 |
32560 |
原裝優(yōu)勢絕對有貨 |
|||
ISSI/芯成 |
24+ |
BGA |
22055 |
鄭重承諾只做原裝進口現(xiàn)貨 |
|||
ISSI |
2014 |
BGA |
854 |
現(xiàn)貨庫存/價格優(yōu)惠熱賣 |
|||
ISSI Integrated Silicon Soluti |
22+ |
84TWBGA (8x12.5) |
9000 |
原廠渠道,現(xiàn)貨配單 |
|||
ISSI |
24+ |
BGA |
9600 |
原裝現(xiàn)貨,優(yōu)勢供應(yīng),支持實單! |
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DdatasheetPDF頁碼索引
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