国产精品久久久久无码av色戒,大帝av在线一区二区三区,国产肥熟女视频一区二区三区,大陆少妇xxxx做受,被黑人猛躁10次高潮视频

SPST THT Tactile Switches with LED

文件：325.4 Kbytes Page：1 Pages

Temperature Detection – Insertion Probe

Features ■Insertion probe for the food industry ■To determine the internal temperature during the cooking process ■Temperature resistant up to 300 °C ■Plastic handle, suitable for food contact ■Probe dimensions ? 4 × 100 mm ■Pt100 sensor, class A, 4-wire connection Functional principle

MOSFETs Silicon N-channel MOS

Applications ? Switching Voltage Regulators ? DC-DC Converters Features (1) High-speed switching (2) Small gate charge: QSW = 2.0 nC (typ.) (3) Low drain-source on-resistance: RDS(ON) = 12.6 mΩ (typ.) (VGS = 4.5 V) (4) Low leakage current: IDSS = 10 μA (max) (VDS = 30 V) (5) Enhancement

MOSFETs Silicon N-channel MOS

Applications ? Switching Voltage Regulators ? DC-DC Converters ? Motor Drivers Features (1) High-speed switching (2) Small gate charge: QSW = 6.4 nC (typ.) (3) Low drain-source on-resistance: RDS(ON) = 9.6 mΩ (typ.) (VGS = 10 V) (4) Low leakage current: IDSS = 10 μA (max) (VDS = 60 V) (

MOSFETs Silicon N-channel MOS

Applications ? High-Efficiency DC-DC Converters ? Switching Voltage Regulators ? Motor Drivers Features (1) High-speed switching (2) Small gate charge: QSW = 5.8 nC (typ.) (3) Small output charge: Qoss = 14.4 nC (typ.) (4) Low drain-source on-resistance: RDS(ON) = 8.8 mΩ (typ.) (VGS = 10

MOSFETs Silicon N-channel MOS

Applications ? High-Efficiency DC-DC Converters ? Switching Voltage Regulators Features (1) High-speed switching (2) Small gate charge: QSW = 2.6 nC (typ.) (3) Low drain-source on-resistance: RDS(ON) = 96 mΩ (typ.) (VGS = 10 V) (4) Low leakage current: IDSS = 10 μA (max) (VDS = 200 V) (5

MOSFETs Silicon N-channel MOS

Applications ? Switching Voltage Regulators ? DC-DC Converters Features (1) High-speed switching (2) Small gate charge: QSW = 2.0 nC (typ.) (3) Low drain-source on-resistance: RDS(ON) = 12.6 mΩ (typ.) (VGS = 4.5 V) (4) Low leakage current: IDSS = 10 μA (max) (VDS = 30 V) (5) Enhancement

Silicon N-channel MOS (U-MOS-H)

1. Applications ? High-Efficiency DC-DC Converters ? Switching Voltage Regulators ? Motor Drivers 2. Features (1) High-speed switching (2) Small gate charge: QSW = 6.5 nC (typ.) (3) Small output charge: Qoss = 21.1 nC (typ.) (4) Low drain-source on-resistance: RDS(ON) = 9.6 mΩ (typ.) (VG

Silicon N-channel MOS (U-MOS??H)

1. Applications ? High-Efficiency DC-DC Converters ? Switching Voltage Regulators ? Motor Drivers 2. Features (1) High-speed switching (2) Small gate charge: QSW = 7.5 nC (typ.) (3) Small output charge: Qoss = 24 nC (typ.) (4) Low drain-source on-resistance: RDS(ON) = 9.8 mΩ (typ.) (VGS

MOSFETs Silicon N-channel MOS

Applications ? DC-DC Converters ? Switching Voltage Regulators ? Motor Drivers Features (1) Small, thin package (2) High-speed switching (3) Small gate charge: QSW = 6.7 nC (typ.) (4) Low drain-source on-resistance: RDS(ON) = 10.8 mΩ (typ.) (VGS = 10 V) (5) Low leakage current: IDSS = 1

MOSFETs Silicon N-channel MOS

Applications ? Switching Voltage Regulators ? Motor Drivers ? DC-DC Converters Features (1) High-speed switching (2) Small gate charge: QSW = 5.5 nC (typ.) (3) Low drain-source on-resistance: RDS(ON) = 11 mΩ (typ.) (4) Low leakage current: IDSS = 10 μA (max) (VDS = 60 V) (5) Enhancement

Silicon N-channel MOS (U-MOS-H)

1. Applications ? High-Efficiency DC-DC Converters ? Switching Voltage Regulators ? Motor Drivers 2. Features (1) High-speed switching (2) Small gate charge: QSW = 5.5 nC (typ.) (3) Small output charge: Qoss = 16.5 nC (typ.) (4) Low drain-source on-resistance: RDS(ON) = 14.7 mΩ (typ.) (V

MOSFETs Silicon N-channel MOS

Applications ? High-Efficiency DC-DC Converters ? Switching Voltage Regulators ? Motor Drivers Features (1) High-speed switching (2) Small gate charge: QSW = 11 nC (typ.) (3) Small output charge: Qoss = 23 nC (typ.) (4) Low drain-source on-resistance: RDS(ON) = 1.2 mΩ (typ.) (VGS = 10 V)

MOSFETs Silicon N-channel MOS

Applications ? High-Efficiency DC-DC Converters ? Switching Voltage Regulators Features (1) High-speed switching (2) Small gate charge: QSW = 2.6 nC (typ.) (3) Low drain-source on-resistance: RDS(ON) = 168 mΩ (typ.) (VGS = 10 V) (4) Low leakage current: IDSS = 10 μA (max) (VDS = 250 V) (

MOSFETs Silicon N-channel MOS

Applications ? High-Efficiency DC-DC Converters ? Switching Voltage Regulators ? Motor Drivers Features (1) High-speed switching (2) Small gate charge: QSW = 10.8 nC (typ.) (3) Small output charge: Qoss = 27 nC (typ.) (4) Low drain-source on-resistance: RDS(ON) = 1.8 mΩ (typ.) (VGS = 10

MOSFETs Silicon N-channel MOS

Applications ? High-Efficiency DC-DC Converters ? Switching Voltage Regulators Features (1) High-speed switching (2) Small gate charge: QSW = 5.2 nC (typ.) (3) Low drain-source on-resistance: RDS(ON) = 3.3 mΩ (typ.) (VGS = 4.5 V) (4) Low leakage current: IDSS = 10 μA (max) (VDS = 30 V) (

MOSFETs Silicon N-channel MOS

Applications ? High-Efficiency DC-DC Converters ? Switching Voltage Regulators ? Motor Drivers Features (1) High-speed switching (2) Small gate charge: QSW = 12 nC (typ.) (3) Small output charge: Qoss = 32 nC (typ.) (4) Low drain-source on-resistance: RDS(ON) = 2.2 mΩ (typ.) (VGS = 10 V)

MOSFETs Silicon N-channel MOS

Applications ? High-Efficiency DC-DC Converters ? Switching Voltage Regulators ? Motor Drivers Features (1) High-speed switching (2) Small gate charge: QSW = 5.6 nC (typ.) (3) Small output charge: Qoss = 17 nC (typ.) (4) Low drain-source on-resistance: RDS(ON) = 2.1 mΩ (typ.) (VGS = 10 V

MOSFETs Silicon N-channel MOS

Applications ? DC-DC Converters ? Switching Voltage Regulators ? Motor Drivers Features (1) Small, thin package (2) High-speed switching (3) Small gate charge: QSW = 4.1 nC (typ.) (4) Low drain-source on-resistance: RDS(ON) = 25 mΩ (typ.) (VGS = 10 V) (5) Low leakage current: IDSS = 10

Tripolar overvoltage protection for network interfaces

Description The TPN3021 is a low capacitance transient surge arrestor designed for protection of high debit rate communication network. Its low capacitance avoids distorsion of the signal as it has been designed for T1/E1 and Ethernet networks. Features ■ Triple crowbar protection ■ Low capaci

TRIPOLAR OVERVOLTAGE PROTECTION FOR NETWORK INTERFACES

Description The TPN3021 is a low capacitance transient surge arrestor designed for protection of high debit rate communication network. Its low capacitance avoids distorsion of the signal as it has been designed for T1/E1 and Ethernet networks. Features ■ Triple crowbar protection ■ Low capaci

Tripolar overvoltage protection for network interfaces

Description The TPN3021 is a low capacitance transient surge arrestor designed for protection of high debit rate communication network. Its low capacitance avoids distorsion of the signal as it has been designed for T1/E1 and Ethernet networks. Features ■ Triple crowbar protection ■ Low capaci

TRIPOLAR OVERVOLTAGE PROTECTION FOR NETWORK INTERFACES

Description The TPN3021 is a low capacitance transient surge arrestor designed for protection of high debit rate communication network. Its low capacitance avoids distorsion of the signal as it has been designed for T1/E1 and Ethernet networks. Features ■ Triple crowbar protection ■ Low capaci

Tripolar overvoltage protection for network interfaces

Description The TPN3021 is a low capacitance transient surge arrestor designed for protection of high debit rate communication network. Its low capacitance avoids distorsion of the signal as it has been designed for T1/E1 and Ethernet networks. Features ■ Triple crowbar protection ■ Low capaci

MOSFETs Silicon N-channel MOS

Applications ? DC-DC Converters ? Switching Voltage Regulators ? Motor Drivers Features (1) Small, thin package (2) High-speed switching (3) Small gate charge: QSW = 4.5 nC (typ.) (4) Low drain-source on-resistance: RDS(ON) = 28 mΩ (typ.) (VGS = 10 V) (5) Low leakage current: IDSS = 10

MOSFETs Silicon N-channel MOS

Applications ? High-Efficiency DC-DC Converters ? Switching Voltage Regulators ? Motor Drivers Features (1) High-speed switching (2) Small gate charge: QSW = 8.1 nC (typ.) (3) Small output charge: Qoss = 20.2 nC (typ.) (4) Low drain-source on-resistance: RDS(ON) = 3.0 mΩ (typ.) (VGS = 10

MOSFETs Silicon N-channel MOS

Applications ? High-Efficiency DC-DC Converters ? Switching Voltage Regulators ? Motor Drivers Features (1) High-speed switching (2) Small gate charge: QSW = 3.3 nC (typ.) (3) Small output charge: Qoss = 21 nC (typ.) (4) Low drain-source on-resistance: RDS(ON) = 39 mΩ (typ.) (VGS = 10 V)

MOSFETs Silicon N-channel MOS

Applications ? High-Efficiency DC-DC Converters ? Switching Voltage Regulators Features (1) High-speed switching (2) Small gate charge: QSW = 3.9 nC (typ.) (3) Low drain-source on-resistance: RDS(ON) = 5.1 mΩ (typ.) (VGS = 4.5 V) (4) Low leakage current: IDSS = 10 μA (max) (VDS = 30 V) (

MOSFETs Silicon P-Channel MOS

Applications ? Lithium-Ion Secondary Batteries ? Power Management Switches Features (1) Low drain-source on-resistance: RDS(ON) = 3.8 mΩ (typ.) (VGS = -4.5 V) (2) Low leakage current: IDSS = -10 μA (max) (VDS = -20 V) (3) Enhancement mode: Vth = -0.5 to -1.2 V (VDS = -10 V, ID = -1.0 mA)

MOSFETs Silicon N-channel MOS

Applications ? DC-DC Converters ? Switching Voltage Regulators ? Motor Drivers Features (1) High-speed switching (2) Small gate charge: QSW = 9.5 nC (typ.) (3) Small output charge: Qoss = 24 nC (typ.) (4) Low drain-source on-resistance: RDS(ON) = 3.5 mΩ (typ.) (VGS = 10 V) (5) Low leaka

MOSFETs Silicon N-channel MOS

Applications ? High-Efficiency DC-DC Converters ? Switching Voltage Regulators Features (1) High-speed switching (2) Small gate charge: QSW = 2.6 nC (typ.) (3) Low drain-source on-resistance: RDS(ON) = 50 mΩ (typ.) (VGS = 10 V) (4) Low leakage current: IDSS = 10 μA (max) (VDS = 150 V) (5

MOSFETs Silicon N-channel MOS

Applications ? High-Efficiency DC-DC Converters ? Switching Voltage Regulators ? Motor Drivers Features (1) High-speed switching (2) Small gate charge: QSW = 5.2 nC (typ.) (3) Small output charge: Qoss = 14 nC (typ.) (4) Low drain-source on-resistance: RDS(ON) = 3.9 mΩ (typ.) (VGS = 10 V

MOSFETs Silicon N-channel MOS

Applications ? Switching Voltage Regulators ? DC-DC Converters Features (1) High-speed switching (2) Small gate charge: QSW = 4.3 nC (typ.) (3) Low drain-source on-resistance: RDS(ON) = 6.8 mΩ (typ.) (VGS = 4.5 V) (4) Low leakage current: IDSS = 10 μA (max) (VDS = 30 V) (5) Enhancement m

MOSFETs Silicon N-channel MOS

Applications ? Lithium-Ion Secondary Batteries ? Power Management Switches Features (1) Small, thin package (2) Low drain-source on-resistance: RDS(ON) = 5.2 mΩ (typ.) (VGS = 10 V) (3) Low leakage current: IDSS = 10 μA (max) (VDS = 30 V) (4) Enhancement mode: Vth = 1.3 to 2.3 V (VDS = 10

MOSFETs Silicon N-channel MOS

Applications ? High-Efficiency DC-DC Converters ? Switching Voltage Regulators Features (1) High-speed switching (2) Small gate charge: QSW = 6.8 nC (typ.) (3) Small output charge: Qoss = 20 nC (typ.) (4) Low drain-source on-resistance: RDS(ON) = 5.4 mΩ (typ.) (VGS = 10 V) (5) Low leakag

MOSFETs Silicon N-channel MOS

Applications ? High-Efficiency DC-DC Converters ? Switching Voltage Regulators ? Motor Drivers Features (1) High-speed switching (2) Small gate charge: QSW = 6.0 nC (typ.) (3) Small output charge: Qoss = 16 nC (typ.) (4) Low drain-source on-resistance: RDS(ON) = 5.6 mΩ (typ.) (VGS = 10 V

MOSFETs Silicon N-channel MOS

Applications ? DC-DC Converters ? Switching Voltage Regulators ? Motor Drivers Features (1) High-speed switching (2) Small gate charge: QSW = 9.2 nC (typ.) (3) Low drain-source on-resistance: RDS(ON) = 6.0 mΩ (typ.) (VGS = 10 V) (4) Low leakage current: IDSS = 10 μA (max) (VDS = 60 V) (

Silicon N-channel MOS (U-MOS-H)

1. Applications ? High-Efficiency DC-DC Converters ? Switching Voltage Regulators ? Motor Drivers 2. Features (1) High-speed switching (2) Small gate charge: QSW = 8.4 nC (typ.) (3) Small output charge: Qoss = 29.9 nC (typ.) (4) Low drain-source on-resistance: RDS(ON) = 6.5 mΩ (typ.) (VG

P-Channel Enhancement Mode MOSFET

FEATURES ? Vds=-100V ID=30A @ ROSON=40mO@Ves=-10V

N-Channel Enhancement Mode Power MOSFET

Application ? Battery protection ? Load switch

P-Channel Enhancement Mode Field Effect Transistor

Application Reverse Battery protection ? Load switch o Power management PWM Application

P-Channel Enhancement Mode Field Effect Transistor

Application Reverse Battery protection ? Load switch o Power management PWM Application

P-Channel Enhancement Mode MOSFET

Application Load/Power Switching Interfacing Switching Battery Management for Ultra Small Portable Electronics. Logic Level Shift

300 mA 25uA Higt PSRR Voltage Regulator

Features ? 254A Ground Current at no Load ? 2% Output Accuracy ? 450mA Output Current + 10nA Disable Current (by option) ? Wide Operating Input Voltage Range: 1.2V to 550 ? Dropout Voltage: 0.32V at 450mA (Vour=3.3V) ? Support Fixed Output Voltage 1.2V, 15V, 1.6V, 1.8V,

300 mA 25uA Higt PSRR Voltage Regulator

Features ? 254A Ground Current at no Load ? 2% Output Accuracy ? 450mA Output Current + 10nA Disable Current (by option) ? Wide Operating Input Voltage Range: 1.2V to 550 ? Dropout Voltage: 0.32V at 450mA (Vour=3.3V) ? Support Fixed Output Voltage 1.2V, 15V, 1.6V, 1.8V,

300 mA 25uA Higt PSRR Voltage Regulator

Features ? 254A Ground Current at no Load ? 2% Output Accuracy ? 450mA Output Current + 10nA Disable Current (by option) ? Wide Operating Input Voltage Range: 1.2V to 550 ? Dropout Voltage: 0.32V at 450mA (Vour=3.3V) ? Support Fixed Output Voltage 1.2V, 15V, 1.6V, 1.8V,

300 mA 25uA Higt PSRR Voltage Regulator

Features ? 254A Ground Current at no Load ? 2% Output Accuracy ? 450mA Output Current + 10nA Disable Current (by option) ? Wide Operating Input Voltage Range: 1.2V to 550 ? Dropout Voltage: 0.32V at 450mA (Vour=3.3V) ? Support Fixed Output Voltage 1.2V, 15V, 1.6V, 1.8V,

300 mA 25uA Higt PSRR Voltage Regulator

Features ? 254A Ground Current at no Load ? 2% Output Accuracy ? 450mA Output Current + 10nA Disable Current (by option) ? Wide Operating Input Voltage Range: 1.2V to 550 ? Dropout Voltage: 0.32V at 450mA (Vour=3.3V) ? Support Fixed Output Voltage 1.2V, 15V, 1.6V, 1.8V,

300 mA 25uA Higt PSRR Voltage Regulator

Features ? 254A Ground Current at no Load ? 2% Output Accuracy ? 450mA Output Current + 10nA Disable Current (by option) ? Wide Operating Input Voltage Range: 1.2V to 550 ? Dropout Voltage: 0.32V at 450mA (Vour=3.3V) ? Support Fixed Output Voltage 1.2V, 15V, 1.6V, 1.8V,

300 mA 25uA Higt PSRR Voltage Regulator

Features ? 254A Ground Current at no Load ? 2% Output Accuracy ? 450mA Output Current + 10nA Disable Current (by option) ? Wide Operating Input Voltage Range: 1.2V to 550 ? Dropout Voltage: 0.32V at 450mA (Vour=3.3V) ? Support Fixed Output Voltage 1.2V, 15V, 1.6V, 1.8V,

With shutdown mode LDO

Features o 151A Current at no Load ? ￡2% Output Accuracy ? 300mA Output Current Current Limit Protection

With shutdown mode LDO

Features o 151A Current at no Load ? ￡2% Output Accuracy ? 300mA Output Current Current Limit Protection

With shutdown mode LDO

Features o 151A Current at no Load ? ￡2% Output Accuracy ? 300mA Output Current Current Limit Protection

With shutdown mode LDO

Features o 151A Current at no Load ? ￡2% Output Accuracy ? 300mA Output Current Current Limit Protection

With shutdown mode LDO

Features o 151A Current at no Load ? ￡2% Output Accuracy ? 300mA Output Current Current Limit Protection

With shutdown mode LDO

Features o 151A Current at no Load ? ￡2% Output Accuracy ? 300mA Output Current Current Limit Protection

With shutdown mode LDO

Features o 151A Current at no Load ? ￡2% Output Accuracy ? 300mA Output Current Current Limit Protection

With shutdown mode LDO

Features o 151A Current at no Load ? ￡2% Output Accuracy ? 300mA Output Current Current Limit Protection

With shutdown mode LDO

Features o 151A Current at no Load ? ￡2% Output Accuracy ? 300mA Output Current Current Limit Protection

With shutdown mode LDO

Features o 151A Current at no Load ? ￡2% Output Accuracy ? 300mA Output Current Current Limit Protection