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Silicon N-channel MOS (U-MOS-H)

1. Applications ? High-Efficiency DC-DC Converters ? Switching Voltage Regulators ? Motor Drivers 2. Features (1) High-speed switching (2) Small gate charge: QSW = 6.5 nC (typ.) (3) Small output charge: Qoss = 21.1 nC (typ.) (4) Low drain-source on-resistance: RDS(ON) = 9.6 mΩ (typ.) (VG

N&P Pair Enhancement Mode MOSFET

Description The ACE12008A is the N&P Channel enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high-density process is especially tailored to minimize on-state resistance and provide superior switching performance. These devices a

N&P Pair Enhancement Mode MOSFET

Description The ACE12008A is the N&P Channel enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high-density process is especially tailored to minimize on-state resistance and provide superior switching performance. These devices a

Series 511 Strip-Line Socket w/Bifurcated Contacts & Solder Pin Tails

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ADVANCED ANALOG HIGH RELIABILITY HYBRID DC/DC CONVERTERS

文件：122.22 Kbytes Page：11 Pages

ADVANCED ANALOG HIGH RELIABILITY HYBRID DC/DC CONVERTERS

文件：122.22 Kbytes Page：11 Pages