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STB20NM60價格

參考價格:¥25.6196

型號:STB20NM60D 品牌:STMicroelectronics 備注:這里有STB20NM60多少錢,2025年最近7天走勢,今日出價,今日競價,STB20NM60批發(fā)/采購報價,STB20NM60行情走勢銷售排行榜,STB20NM60報價。
型號 功能描述 生產(chǎn)廠家&企業(yè) LOGO 操作
STB20NM60

N-CHANNEL 600V - 0.25ohm - 20A TO-220/FP/D2PAK/I2PAK MDmesh Power MOSFET

Features 1. High dv/dt and avalanche capabilities 2. 100 avalanche tested 3. Low input capacitance and gate charge 4. Low gate input resistance Applications 1. Switching applications Description The MDmesh? is a new revolutionary Power MOSFET technology that associates the multiple

STMICROELECTRONICS

意法半導(dǎo)體

STB20NM60

N-channel 600V - 0.25廓 - 20A - TO-247 - TO-220/FP - D2/I2PAK MDmesh??Power MOSFET

Features 1. High dv/dt and avalanche capabilities 2. 100 avalanche tested 3. Low input capacitance and gate charge 4. Low gate input resistance Applications 1. Switching applications Description The MDmesh? is a new revolutionary Power MOSFET technology that associates the multiple

STMICROELECTRONICS

意法半導(dǎo)體

STB20NM60

isc N-Channel MOSFET Transistor

文件:313.78 Kbytes Page:2 Pages

ISC

無錫固電

N-channel 600V - 0.25廓 - 20A - TO-247 - TO-220/FP - D2/I2PAK MDmesh??Power MOSFET

Features 1. High dv/dt and avalanche capabilities 2. 100 avalanche tested 3. Low input capacitance and gate charge 4. Low gate input resistance Applications 1. Switching applications Description The MDmesh? is a new revolutionary Power MOSFET technology that associates the multiple

STMICROELECTRONICS

意法半導(dǎo)體

N-CHANNEL 600V - 0.25ohm - 20A TO-220/FP/D2PAK/I2PAK MDmesh Power MOSFET

Features 1. High dv/dt and avalanche capabilities 2. 100 avalanche tested 3. Low input capacitance and gate charge 4. Low gate input resistance Applications 1. Switching applications Description The MDmesh? is a new revolutionary Power MOSFET technology that associates the multiple

STMICROELECTRONICS

意法半導(dǎo)體

N-CHANNEL 650V@Tjmax - 0.25 Ohm - 20A I?PAK/TO-220/TO-220FP

DESCRIPTION The MDmesh? is a new revolutionary MOSFET technology that associates the Multiple Drain process with the Company’s PowerMESH? horizontal layout. The resulting product has an outstanding low on-resistance, impressively high dv/dt and excellent avalanche characteristics. The adoption

STMICROELECTRONICS

意法半導(dǎo)體

N-channel 600V - 0.26廓 - 20A - D2PAK FDmesh??Power MOSFET

Description The FDmesh? associates all advantages of reduced on-resistance and fast switching with an intrinsic fast-recovery body diode. It is therefore strongly recommended for bridge topologies, in particular ZVS phase-shift converters. ■ High dv/dt and avalanche capabilities ■ 100 A

STMICROELECTRONICS

意法半導(dǎo)體

N-channel 600V - 0.25廓 - 20A - TO-247 - TO-220/FP - D2/I2PAK MDmesh??Power MOSFET

Features 1. High dv/dt and avalanche capabilities 2. 100 avalanche tested 3. Low input capacitance and gate charge 4. Low gate input resistance Applications 1. Switching applications Description The MDmesh? is a new revolutionary Power MOSFET technology that associates the multiple

STMICROELECTRONICS

意法半導(dǎo)體

N-CHANNEL 600V - 0.25ohm - 20A TO-220/FP/D2PAK/I2PAK MDmesh Power MOSFET

Features 1. High dv/dt and avalanche capabilities 2. 100 avalanche tested 3. Low input capacitance and gate charge 4. Low gate input resistance Applications 1. Switching applications Description The MDmesh? is a new revolutionary Power MOSFET technology that associates the multiple

STMICROELECTRONICS

意法半導(dǎo)體

isc N-Channel MOSFET Transistor

文件:358.54 Kbytes Page:2 Pages

ISC

無錫固電

isc N-Channel MOSFET Transistor

文件:313.79 Kbytes Page:2 Pages

ISC

無錫固電

N-CHANNEL 600V - 0.26ohm - 20A TO-220-TO-220FP-TO-247 FDmesh POWER MOSFET (with FAST DIODE)

Description The FDmesh? associates all advantages of reduced on-resistance and fast switching with an intrinsic fast-recovery body diode. It is therefore strongly recommended for bridge topologies, in particular ZVS phase-shift converters. ■ High dv/dt and avalanche capabilities ■ 100 Avalanch

STMICROELECTRONICS

意法半導(dǎo)體

N-channel 600V - 0.25廓 - 20A - TO-247 - TO-220/FP - D2/I2PAK MDmesh??Power MOSFET

Features 1. High dv/dt and avalanche capabilities 2. 100 avalanche tested 3. Low input capacitance and gate charge 4. Low gate input resistance Applications 1. Switching applications Description The MDmesh? is a new revolutionary Power MOSFET technology that associates the multiple

STMICROELECTRONICS

意法半導(dǎo)體

N-CHANNEL 600V - 0.26ohm - 20A TO-220-TO-220FP-TO-247 FDmesh POWER MOSFET (with FAST DIODE)

Description The FDmesh? associates all advantages of reduced on-resistance and fast switching with an intrinsic fast-recovery body diode. It is therefore strongly recommended for bridge topologies, in particular ZVS phase-shift converters. ■ High dv/dt and avalanche capabilities ■ 100 Avalanch

STMICROELECTRONICS

意法半導(dǎo)體

20A, 600V N-CHANNEL SUPER-JUNCTION MOSFET

文件:240.75 Kbytes Page:6 Pages

UTC

友順

N-Channel 650-V (D-S) Super Junction MOSFET

文件:1.15454 Mbytes Page:11 Pages

VBSEMI

微碧半導(dǎo)體

STB20NM60產(chǎn)品屬性

  • 類型

    描述

  • 型號

    STB20NM60

  • 制造商

    STMicroelectronics

  • 功能描述

    MOSFET N-Channel 600V 20A D2PAK

更新時間:2025-9-10 20:00:00
IC供應(yīng)商 芯片型號 品牌 批號 封裝 庫存 備注 價格
ST/意法
22+
SOT-263
100000
代理渠道/只做原裝/可含稅
ST(意法)
24+
NA/
8735
原廠直銷,現(xiàn)貨供應(yīng),賬期支持!
NA
25+
原廠原封可拆樣
54687
百分百原裝現(xiàn)貨 實單必成
ST/意法
25+
TO-263
32360
ST/意法全新特價STB20NM60T4即刻詢購立享優(yōu)惠#長期有貨
ST
18+
D2-PAK
3000
一級代理,專注軍工、汽車、醫(yī)療、工業(yè)、新能源、電力
ST/意法半導(dǎo)體
24+
TO-263-3
6000
全新原裝深圳倉庫現(xiàn)貨有單必成
STM
23+
TO-263-3 (D2PAK)
50000
原裝正品 支持實單
ST
21+
TO-263
36968
十年信譽,只做原裝,有掛就有現(xiàn)貨!
ST/意法半導(dǎo)體
24+
TO-263-3
10000
十年沉淀唯有原裝
ST/意法半導(dǎo)體
25+
原廠封裝
10280
原廠授權(quán)代理,專注軍工、汽車、醫(yī)療、工業(yè)、新能源!

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