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MJE180晶體管資料
MJE180別名：MJE180三極管、MJE180晶體管、MJE180晶體三極管
MJE180生產(chǎn)廠家：美國(guó)摩托羅拉半導(dǎo)體公司
MJE180制作材料：Si-NPN
MJE180性質(zhì)：低頻或音頻放大 （LF）_功率放大 （L）
MJE180封裝形式：直插封裝
MJE180極限工作電壓：40V
MJE180最大電流允許值：3A
MJE180最大工作頻率：<1MHZ或未知
MJE180引腳數(shù)：3
MJE180最大耗散功率：12.5W
MJE180放大倍數(shù)：
MJE180圖片代號(hào)：B-21
MJE180vtest：40
MJE180htest：999900
- MJE180atest：3
MJE180wtest：12.5
MJE180代換 MJE180用什么型號(hào)代替：BD175,BD185,BD233,BD437,SDD373A,
MJE180價(jià)格
參考價(jià)格：￥5.0644
型號(hào)：MJE180 品牌：Central Semiconductor Co 備注：這里有MJE180多少錢，2025年最近7天走勢(shì)，今日出價(jià)，今日競(jìng)價(jià)，MJE180批發(fā)/采購(gòu)報(bào)價(jià)，MJE180行情走勢(shì)銷售排行榜，MJE180報(bào)價(jià)。| 型號(hào) | 功能描述 | 生產(chǎn)廠家 企業(yè) | LOGO | 操作 |
|---|---|---|---|---|
MJE180 | Low Power Audio Amplifier Low Current High Speed Switching Applications Low Current High Speed Switching Applications | FairchildFairchild Semiconductor 仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司 |   | |
MJE180 | PNP PLASTIC POWER TRANSISTORS MJE170, 171, 172 PNP PLASTIC POWER TRANSISTORS MJE180, 181, 182 NPN PLASTIC POWER TRANSISTORS | CDIL | | |
MJE180 | SILICON COMPLEMENTRY POWER TRANSISTOR
| Central | | |
MJE180 | POWER TRANSISTORS(3.0A,40-80V,12.5W) COMPLEMENTARY SILICON PLASTIC POWER TRANSISTORS | MOSPEC 統(tǒng)懋 | | |
MJE180 | isc Silicon NPN Power Transistor DESCRIPTION ·Collector–Emitter Sustaining Voltage— : VCEO(SUS) = 40 V ·DC Current Gain— : hFE = 30(Min) @ IC= 0.5 A = 12(Min) @ IC= 1.5 A ·Complement to Type MJE170 APPLICATIONS ·Low power audio amplifier ·Low current high speed swit | ISC 無(wú)錫固電 | | |
MJE180 | COMPLEMENTARY SILICON PLASTIC POWER TRANSISTORS COMPLEMENTARY SILICON PLASTIC POWER TRANSISTORS ... designed for low power amplifier and low current, high speed switchii applications. FEATURES: * Collector-Emitter Sustaining VoHage- VCEO(SUS) =40 V (Min) - MJE170.MJE180 = 60 V (Min) - MJE171.MJE181 | NJSEMINew Jersey Semi-Conductor Products, Inc. 新澤西半導(dǎo)體新澤西半導(dǎo)體公司 | | |
MJE180 | Silicon NPN Power Transistors DESCRIPTION ·With TO-126 package ·Complement to type MJE170/171/172 APPLICATIONS ·For low power audio amplifier and low current high speed switching applications | SAVANTIC | | |
MJE180 | Through-Hole Transistor-Bipolar Power (>1A) NPN General Purpose Amplifier/Switch | Central | | |
MJE180 | Silicon NPN Power Transistors 文件：104.4 Kbytes Page：3 Pages | SAVANTIC | | |
MJE180 | Trans GP BJT NPN 40V 3A 3-Pin TO-126 Box | NJS | | |
MJE180 | 三極管 | MOSPEC 統(tǒng)懋 | | |
MJE180 | Complementary Plastic Silicon Power Transistors 40 ??60 ??80 VOLTS 12.5 WATTS 文件：83.18 Kbytes Page：6 Pages | ONSEMI 安森美半導(dǎo)體 | | |
POWER TRANSISTOR SWITCHMODE NPN Bipolar Power Transistor For Switching Power Supply Applications The MJE18002 have an applications specific state?of?the?art die designed for use in 220 V line operated Switchmode Power supplies and electronic light ballasts. Features ? Improved Efficiency Due to Low Base Drive R | ONSEMI 安森美半導(dǎo)體 | | ||
POWER TRANSISTOR 2.0 AMPERES 1000 VOLTS 25 and 50 WATTS SWITCHMODE? NPN Bipolar Power Transistor For Switching Power Supply Applications The MJE/MJF18002 have an applications specific state–of–the–art die designed for use in 220 V line operated Switchmode Power supplies and electronic light ballasts. These high voltage/high speed transistors offer th | Motorola 摩托羅拉 | | ||
Silicon NPN Power Transistors DESCRIPTION ·With TO-220 package ·High voltage, high speed APPLICATIONS ·Designed for use in 220V line-operated switchmode power supplies and electronic light ballast | SAVANTIC | | ||
Silicon NPN Power Transistors DESCRIPTION ·With TO-220 package ·High voltage, high speed APPLICATIONS ·Designed for use in 220V line-operated switchmode power supplies and electronic light ballast | ISC 無(wú)錫固電 | | ||
POWER TRANSISTORS 2 AMPERES 1000 VOLTS 50 WATTS High Speed, High Gain Bipolar NPN Power Transistor with Integrated Collector-Emitter Diode and Built-in Efficient Antisaturation Network The MJE18002D2 use a newly developed technology, so called H2BIP*, to design the state of art transistor dedicated to the Electronic Light Ballast and PFC** cir | Motorola 摩托羅拉 | | ||
POWER TRANSISTORS High Speed, High Gain Bipolar NPN Power Transistor with Integrated Collector-Emitter Diode and Built-in Efficient Antisaturation Network The MJE18002D2 use a newly developed technology, so called H2BIP*, to design the state of art transistor dedicated to the Electronic Light Ballast and PFC** cir | ONSEMI 安森美半導(dǎo)體 | | ||
SWITCHMODE NPN Bipolar Power Transistor For Switching Power Supply Applications SWITCHMODE NPN Bipolar Power Transistor For Switching Power Supply Applications The MJE18002 have an applications specific state?of?the?art die designed for use in 220 V line operated Switchmode Power supplies and electronic light ballasts. Features ? Improved Efficiency Due to Low Base Drive R | ONSEMI 安森美半導(dǎo)體 | | ||
POWER TRANSISTOR 5.0 AMPERES 1000 VOLTS 35 and 75 WATTS POWER TRANSISTOR 5.0 AMPERES 1000 VOLTS 35 and 75 WATTS The MJE/MJF18004 have an applications specific state–of–the–art die designed for use in 220 V line operated Switchmode Power supplies and electronic light ballasts. This high voltage/high speed transistors offer the following: ? Improved Ef | Motorola 摩托羅拉 | | ||
POWER TRANSISTOR SWITCHMODE NPN Bipolar Power Transistor For Switching Power Supply Applications The MJE/MJF18004G have an applications specific state?of?the?art die designed for use in 220 V line?operated SWITCHMODE Power supplies and electronic light ballasts. Features ● Improved Efficiency Due to Low Base D | ONSEMI 安森美半導(dǎo)體 | | ||
NPN Bipolar Power Transistor For Switching Power Supply Applications SWITCHMODE NPN Bipolar Power Transistor For Switching Power Supply Applications The MJE/MJF18004G have an applications specific state?of?the?art die designed for use in 220 V line?operated SWITCHMODE Power supplies and electronic light ballasts. Features ● Improved Efficiency Due to Low Base D | ONSEMI 安森美半導(dǎo)體 | | ||
isc Silicon NPN Power Transistor DESCRIPTION ? Collector-Base Breakdown Voltage- : V(BR)CBO= 1000V(Min) ? High Switching Speed APPLICATIONS ? Designed for use in 220V line-operated switchmode power supplies and electronic light ballasts | ISC 無(wú)錫固電 | | ||
Silicon NPN Power Transistor DESCRIPTION ? Collector-Base Breakdown Voltage- : V(BR)CBO= 1000V(Min) ? High Switching Speed APPLICATIONS ? Designed for use in 220V line-operated switchmode power supplies and electronic light ballasts | NJSEMINew Jersey Semi-Conductor Products, Inc. 新澤西半導(dǎo)體新澤西半導(dǎo)體公司 | | ||
Silicon NPN Power Transistors DESCRIPTION ? With TO-220 package ? High voltage ,high speed APPLICATIONS ? Designed for use in 220V line-operated switchmode power supplies and electronic light ballasts | SAVANTIC | | ||
POWER TRANSISTORS The MJE18004D2 is state–of–art High Speed High gain BIPolar transistor (H2BIP). High dynamic characteristics and lot to lot minimum spread (±150 ns on storage time) make it ideally suitable for light ballast applications. Therefore, there is no need to guarantee an hFE window. Main features: | ONSEMI 安森美半導(dǎo)體 | | ||
POWER TRANSISTORS 5 AMPERES 1000 VOLTS 75 WATTS The MJE18004D2 is state–of–art High Speed High gain BIPolar transistor (H2BIP). High dynamic characteristics and lot to lot minimum spread (±150 ns on storage time) make it ideally suitable for light ballast applications. Therefore, there is no need to guarantee an hFE window. Main features | Motorola 摩托羅拉 | | ||
NPN Bipolar Power Transistor For Switching Power Supply Applications SWITCHMODE NPN Bipolar Power Transistor For Switching Power Supply Applications The MJE/MJF18004G have an applications specific state?of?the?art die designed for use in 220 V line?operated SWITCHMODE Power supplies and electronic light ballasts. Features ● Improved Efficiency Due to Low Base D | ONSEMI 安森美半導(dǎo)體 | | ||
POWER TRANSISTOR SWITCHMODE NPN Bipolar Power Transistor For Switching Power Supply Applications The MJE/MJF18006 have an applications specific state–of–the–art die designed for use in 220 V line–operated Switchmode Power supplies and electronic light ballasts. These high voltage/high speed transistors o | ONSEMI 安森美半導(dǎo)體 | | ||
POWER TRANSISTOR 6.0 AMPERES 1000 VOLTS 40 and 100 WATTS SWITCHMODE NPN Bipolar Power Transistor For Switching Power Supply Applications The MJE/MJF18006 have an applications specific state–of–the–art die designed for use in 220 V line–operated Switchmode Power supplies and electronic light ballasts. These high voltage/high speed transistors | Motorola 摩托羅拉 | | ||
Silicon NPN Power Transistors DESCRIPTION ? With TO-220C package ? High voltage ,high speed APPLICATIONS ? Designed for use in 220V line-operated switchmode power supplies and electronic light ballasts. | SAVANTIC | | ||
Silicon NPN Power Transistor DESCRIPTION ? Collector-Base Breakdown Voltage- :V(BR)CBO=1000V(Min) ? High Switching Speed APPLICATIONS ? Designed for use in 220V line-operated switchmode power supplies and electronic light ballasts | NJSEMINew Jersey Semi-Conductor Products, Inc. 新澤西半導(dǎo)體新澤西半導(dǎo)體公司 | | ||
Silicon NPN Power Transistors DESCRIPTION ? With TO-220C package ? High voltage ,high speed ? Improved efficiency due to low base drive requirements: -High and flat DC current gain hFE -Fast switching APPLICATIONS ? Designed for use in 220V line-operated switchmode power supplies and electronic | JMNIC 錦美電子 | | ||
Silicon NPN Power Transistors DESCRIPTION ? With TO-220C package ? High voltage ,high speed APPLICATIONS ? Designed for use in 220V line-operated switchmode power supplies and electronic light ballasts. | ISC 無(wú)錫固電 | | ||
NPN Bipolar Power Transistor For Switching Power Supply Applications SWITCHMODE NPN Bipolar Power Transistor For Switching Power Supply Applications The MJE18006G has an applications specific state?of?the?art die designed for use in 220 V line?operated SWITCHMODE Power supplies and electronic light ballasts. Features ? Improved Efficiency Due to Low | ONSEMI 安森美半導(dǎo)體 | | ||
POWER TRANSISTOR 8.0 AMPERES 1000 VOLTS 45 and 125 WATTS SWITCHMODE? NPN Bipolar Power Transistor For Switching Power Supply Applications The MJE/MJF18008 have an applications specific state–of–the–art die designed for use in 220 V line–operated Switchmode Power supplies and electronic light ballasts. These high voltage/high speed transistors of | Motorola 摩托羅拉 | | ||
POWER TRANSISTOR SWITCHMODE NPN Bipolar Power Transistor For Switching Power Supply Applications The MJE/MJF18008G have an applications specific state?of?the?art die designed for use in 220 V line?operated SWITCHMODE Power supplies and electronic light ballasts. Features ? Improved Efficiency Due to Low Base | ONSEMI 安森美半導(dǎo)體 | | ||
NPN Bipolar Power Transistor For Switching Power Supply Applications SWITCHMODE NPN Bipolar Power Transistor For Switching Power Supply Applications The MJE/MJF18008G have an applications specific state?of?the?art die designed for use in 220 V line?operated SWITCHMODE Power supplies and electronic light ballasts. Features ? Improved Efficiency Due to Low Base | ONSEMI 安森美半導(dǎo)體 | | ||
Silicon NPN Power Transistors DESCRIPTION ·With TO-220C package ·High voltage, high speed APPLICATIONS ·Designed for use in 220V line-operated switchmode power supplies and electronic light ballasts | ISC 無(wú)錫固電 | | ||
Silicon NPN Power Transistors DESCRIPTION ·With TO-220C package ·High voltage ,high speed ·Improved efficiency due to low base drive requirements: -High and flat DC current gain hFE -Fast switching APPLICATIONS ·Designed for use in 220V line-operated switchmode power supplies and electronic light ballasts. | JMNIC 錦美電子 | | ||
Silicon NPN Power Transistor DESCRIPTION ? Collector-Base Breakdown Voltage- :V(BR)CBO= 1000V(Min) ? High Switching Speed APPLICATIONS ? Designed for use in 220V line-operated switchmode power supplies and electronic light ballasts | NJSEMINew Jersey Semi-Conductor Products, Inc. 新澤西半導(dǎo)體新澤西半導(dǎo)體公司 | | ||
Silicon NPN Power Transistors DESCRIPTION ·With TO-220C package ·High voltage, high speed APPLICATIONS ·Designed for use in 220V line-operated switchmode power supplies and electronic light ballasts | SAVANTIC | | ||
NPN Bipolar Power Transistor For Switching Power Supply Applications SWITCHMODE NPN Bipolar Power Transistor For Switching Power Supply Applications The MJE/MJF18008G have an applications specific state?of?the?art die designed for use in 220 V line?operated SWITCHMODE Power supplies and electronic light ballasts. Features ? Improved Efficiency Due to Low Base | ONSEMI 安森美半導(dǎo)體 | | ||
POWER TRANSISTORS The MJE/MJF18009 has an application specific state–of–the–art die designed for use in 220 V line–operated SWITCHMODE Power supplies and electronic ballast (“l(fā)ight ballast”). These high voltage/high speed transistors exhibit the following main features: ? Improved Efficiency Due to Low Base Drive | ONSEMI 安森美半導(dǎo)體 | | ||
POWER TRANSISTORS 10 AMPERES 1000 VOLTS 50 and 150 WATTS The MJE/MJF18009 has an application specific state–of–the–art die designed for use in 220 V line–operated Switchmode Power supplies and electronic ballast (“l(fā)ight ballast”). These high voltage/high speed transistors exhibit the following main features: ? Improved Efficiency Due to Low Base Drive | Motorola 摩托羅拉 | | ||
Complementary Plastic Silicon Power Transistors Complementary Plastic Silicon Power Transistors The MJE170/180 series is designed for low power audio amplifier and low current, high speed switching applications. Features ? Collector?Emitter Sustaining Voltage ? VCEO(sus) = 40 Vdc ? MJE170, MJE180 = 60 Vdc ? MJE171, | ONSEMI 安森美半導(dǎo)體 | | ||
封裝/外殼：TO-220-3 包裝：散裝 描述：TRANS NPN 450V 2A TO220 分立半導(dǎo)體產(chǎn)品 晶體管 - 雙極性晶體管（BJT）- 單個(gè) | ONSEMI 安森美半導(dǎo)體 | | ||
Silicon NPN Power Transistors 文件：103 Kbytes Page：3 Pages | SAVANTIC | | ||
封裝/外殼：TO-220-3 包裝：散裝 描述：TRANS NPN 450V 2A TO220 分立半導(dǎo)體產(chǎn)品 晶體管 - 雙極性晶體管（BJT）- 單個(gè) | ONSEMI 安森美半導(dǎo)體 | | ||
Switch-mode NPN Bipolar Power Transistor 文件：151.19 Kbytes Page：11 Pages | ONSEMI 安森美半導(dǎo)體 | | ||
Silicon NPN Power Transistors 文件：103.36 Kbytes Page：3 Pages | SAVANTIC | | ||
Switch-mode NPN Bipolar Power Transistor 文件：151.19 Kbytes Page：11 Pages | ONSEMI 安森美半導(dǎo)體 | | ||
Switch-mode NPN Bipolar Power Transistor 文件：151.19 Kbytes Page：11 Pages | ONSEMI 安森美半導(dǎo)體 | | ||
Silicon NPN Power Transistors 文件：103.08 Kbytes Page：3 Pages | SAVANTIC | | ||
Silicon NPN Power Transistors 文件：100.56 Kbytes Page：3 Pages | JMNIC 錦美電子 | | ||
Silicon NPN Power Transistors 文件：102.73 Kbytes Page：3 Pages | SAVANTIC | | ||
Switch-mode NPN Bipolar Power Transistor 文件：145.27 Kbytes Page：10 Pages | ONSEMI 安森美半導(dǎo)體 | | ||
Switch-mode NPN Bipolar Power Transistor 文件：145.27 Kbytes Page：10 Pages | ONSEMI 安森美半導(dǎo)體 | | ||
Silicon NPN Power Transistors 文件：100.04 Kbytes Page：3 Pages | JMNIC 錦美電子 | | ||
Switch-mode NPN Bipolar Power Transistor 文件：145.27 Kbytes Page：10 Pages | ONSEMI 安森美半導(dǎo)體 | |
MJE180產(chǎn)品屬性
- 類型
描述
- 型號(hào)
MJE180
- 功能描述
兩極晶體管 - BJT NPN Power
- RoHS
否
- 制造商
STMicroelectronics
- 晶體管極性
PNP 集電極—基極電壓
- VCBO
集電極—發(fā)射極最大電壓
- VCEO
- 40 V 發(fā)射極 - 基極電壓
- VEBO
- 6 V
- 增益帶寬產(chǎn)品fT
直流集電極/Base Gain hfe
- Min
100 A
- 安裝風(fēng)格
SMD/SMT
- 封裝/箱體
PowerFLAT 2 x 2
| IC供應(yīng)商 | 芯片型號(hào) | 品牌 | 批號(hào) | 封裝 | 庫(kù)存 | 備注 | 價(jià)格 |
|---|---|---|---|---|---|---|---|
MOTOROLA/摩托羅拉 |
22+ |
TO126 |
100000 |
代理渠道/只做原裝/可含稅 |
|||
FAIRCHILD/仙童 |
24+ |
NA/ |
1138 |
優(yōu)勢(shì)代理渠道,原裝正品,可全系列訂貨開(kāi)增值稅票 |
|||
MOTOROLA/摩托羅拉 |
25+ |
TO-225AATO-126 |
54558 |
百分百原裝現(xiàn)貨 實(shí)單必成 歡迎詢價(jià) |
|||
MOTO |
25+ |
TO220 |
18000 |
原廠直接發(fā)貨進(jìn)口原裝 |
|||
ON |
24+/25+ |
TO-220 |
880 |
原裝正品現(xiàn)貨庫(kù)存價(jià)優(yōu) |
|||
ON/安森美 |
20+ |
TO-225AA |
67500 |
原裝優(yōu)勢(shì)主營(yíng)型號(hào)-可開(kāi)原型號(hào)增稅票 |
|||
ON/安森美 |
18+ |
TO220 |
19444 |
全新原裝現(xiàn)貨,可出樣品,可開(kāi)增值稅發(fā)票 |
|||
ON |
1115+ |
TO-225AA |
213 |
一級(jí)代理,專注軍工、汽車、醫(yī)療、工業(yè)、新能源、電力 |
|||
MOT |
23+ |
TO-220 |
3000 |
專做原裝正品,假一罰百! |
|||
ON |
23+ |
TO-225 |
30 |
正規(guī)渠道,只有原裝! |
MJE180芯片相關(guān)品牌
MJE180規(guī)格書(shū)下載地址
MJE180參數(shù)引腳圖相關(guān)
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DdatasheetPDF頁(yè)碼索引
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