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POWER TRANSISTORS

High Speed, High Gain Bipolar NPN Power Transistor with Integrated Collector-Emitter Diode and Built-in Efficient Antisaturation Network The MJE18002D2 use a newly developed technology, so called H2BIP*, to design the state of art transistor dedicated to the Electronic Light Ballast and PFC** cir

POWER TRANSISTORS 2 AMPERES 1000 VOLTS 50 WATTS

High Speed, High Gain Bipolar NPN Power Transistor with Integrated Collector-Emitter Diode and Built-in Efficient Antisaturation Network The MJE18002D2 use a newly developed technology, so called H2BIP*, to design the state of art transistor dedicated to the Electronic Light Ballast and PFC** cir

POWER TRANSISTORS 2 AMPERES 1000 VOLTS 50 WATTS

POWER TRANSISTORS

POWER TRANSISTOR 2 AMPERES 1000 VOLTS, 50 WATTS Bipolar NPN Transistor

Bipolar NPN Transistor High Speed, High Gain Bipolar NPN Power Transistor with Integrated Collector?Emitter Diode and Built?In Efficient Antisaturation Network The MJD18002D2 is a state?of?the?art high speed, high gain bipolar transistor (H2BIP). Tight dynamic characteristics and lot to lot mini