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18A, 200V, 0.180 Ohm, N-Channel Power MOSFETs

These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applications such as

200V N-Channel MOSFET

General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstan

N-Channel Power MOSFETs, 18A, 150-200V

N-Channel Power MOSFETs, 18A, 150-200V

N-channel TrenchMOS transistor

GENERAL DESCRIPTION N-channel, enhancement mode field-effect power transistor using Trench technology, intended for use in off-line switched mode power supplies, T.V. and computer monitor power supplies, d.c. to d.c. converters, motor control circuits and general purpose switching applications.

Power MOSFET

DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation

N-Channel Enhancement Mode POWER MOSFET

Features: * Super High Dense Cell Design For Low RDS(ON) RDS(ON)

N CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS

FEATURE N channel in a plastic TO220 package. They are intended for use in high speed power switching, low voltage, relay drivers and general purpose switching applications. DC-DC & DC-AC converters for telecom, industrial and lighting equipment. Compliance to RoHS.

TECHNICAL SPECIFICATIONS OF N-CHANNEL POWER MOSFET

Description Designed for low voltage, high speed power switching applications such as switching regulators, converters, solenoid and relay drivers. Features * Repetitive Avalanche Rated * Fast Switching * Ease of Paralleling * Simple Drive Requirements

Power MOSFET(Vdss=200V, Rds(on)=0.18ohm, Id=18A)

Description Third Generation HEXFETs from International Rectifier provide the designer with best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220 package is universally preferred all commercial-industrial applications at power dissipat

18A 200V N CHANNEL POWER MOSFET

GENERAL DESCRIPTION This Power MOSFET is designed for low voltage, high speed power switching applications such as switching regulators, converters, solenoid and relay drivers. FEATURES ◆ Silicon Gate for Fast Switching Speeds ◆ Low RDS(on) to Minimize On-Losses. Specified at Elevated Temp

isc N-Channel MOSFET Transistor

DESCRIPTION ? Drain Current –ID= 18A@ TC=25℃ ? Drain Source Voltage- : VDSS= 200V(Min) ? Static Drain-Source On-Resistance : RDS(on) = 0.18Ω (Max) ? Fast Switching Speed ? Low Drive Requirement APPLICATIONS ? Designed for low voltage, high speed power switching applications such

POWERTR MOSFET

GENERAL DESCRIPTION This Power MOSFET is designed for low voltage, high speed power switching applications such as switching regulators, converters, solenoid and relay drivers. FEATURES ◆ Silicon Gate for Fast Switching Speeds ◆ Low RDS(on) to Minimize On-Losses. Specified at Elevated Temp

N - CHANNEL 200V - 0.150ohm - 18A TO-220/TO-220FP MESH OVERLAY] MOSFET

DESCRIPTION This power MOSFET is designed using he company’s consolidated strip layout-based MESH OVERLAY? process. This technology matches and improves the performances compared with standard parts from various sources. ■ TYPICAL RDS(on) = 0.150 ? ■ EXTREMELY HIGH dV/dt CAPABILITY ■ VERY LOW

N-Channel Power Mosfets

18A, 200V, 0.180 Ohm, N-Channel Power Mosfets These are N-Channel enhansement mode silicon gate power field effect transistors. They are advance power MOSFETs designed, tested, and guaranteed to withstancd a specified level of energy in the breakdown avalanche mode of operation. All of these powe

Power MOSFET Dynamic dV/dt Rating Repetitive Avalanche Rated Fast Switching

DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation

N-Channel Power MOSFET

DESCRIPTION The Nell IRF640 are N-channel enhancement mode silicon gate power field effect transistors. They are designed, tested and guaranteed to withstand level of energy in breakdown avalanche made of operation. FEATURES ● RDS(ON) = 0.180? @ VGS = 10V ● Ultra low gate charge(63nC max.) ●

N-Channel MOSFET uses advanced trench technology

Description： This N-Channel MOSFET uses advanced trench technology and design to provide excellent RDS(on) with low gate charge. It can be used in a wide variety of applications. Features： 1) VDS=200V,ID=18A,RDS(ON)

N - CHANNEL 200V - 0.150W - 18A TO-220/TO-220FP MESH OVERLAY? MOSFET

APPLICATIONS n HIGH CURRENT SWITCHING n UNINTERRUPTIBLE POWER SUPPLY (UPS) n DC/DC COVERTERS FOR TELECOM, INDUSTRIAL, AND LIGHTING EQUIPMENT.

SEMICONDUCTORS

文件：2.43533 Mbytes Page：31 Pages

Power MOSFET

200V N-Channel Power MOSFET

N-channel power MOSFET for fast switching applications, 200V, 18A

Power MOSFET

文件：168.14 Kbytes Page：8 Pages

Advanced Power MOSFET

FEATURES ■ Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ■ Lower Input Capacitance ■ Improved Gate Charge ■ Extended Safe Operating Area ■ Lower Leakage Current : 10 A (Max.) @ VDS= 200V ■ Lower RDS(ON) : 0.144 ?(Typ.)

isc N-Channel MOSFET Transistor

DESCRIPTION ? Designed for use in switch mode power supplies and general purpose applications. FEATURES ? Low RDS(on) = 0.144Ω(TYP) ? Lower Input Capacitance ? Improved Gate Charge ? Extended Safe Operating Area ? Rugged Gate Oxide Technology

200V N-Channel MOSFET

General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstan

200V N-Channel MOSFET

General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand hi

isc N-Channel MOSFET Transistor

DESCRIPTION ? Designed for use in switch mode power supplies and general purpose applications. FEATURES ? Low RDS(on) = 0.180Ω(?TYP) ? Lower Input Capacitance ? Improved Gate Charge ? Extended Safe Operating Area ? Rugged Gate Oxide Technology

N - CHANNEL 200V - 0.150ohm - 18A TO-220/TO-220FP MESH OVERLAY] MOSFET

DESCRIPTION This power MOSFET is designed using he company’s consolidated strip layout-based MESH OVERLAY? process. This technology matches and improves the performances compared with standard parts from various sources. ■ TYPICAL RDS(on) = 0.150 ? ■ EXTREMELY HIGH dV/dt CAPABILITY ■ VERY LOW

IRF640FP 18A 200V N CHANNEL POWER MOSFET

GENERAL DESCRIPTION This Power MOSFET is designed for low voltage, high speed power switching applications such as switching regulators, converters, solenoid and relay drivers. FEATURES ? Silicon Gate for Fast Switching Speeds ? Low RDS(on) to Minimize On-Losses. Specified at Elevated Temperat

Power MOSFET

DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combinations of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The D2PAK is a surface mount power package capable of accommodating die size up to HEX-4. It provides the

Power MOSFET(Vdss=200V, Rds(on)=0.18ohm, Id=18A)

Description Third Generation HEXFETs from International Rectifier provide the designer with the best combinations of fast switching , ruggedized device design, low on-resistance and cost effectiveness. Surface Mount (IRF640S) Low-profile through-hole (IRF640L) Available in Tape &

Power MOSFET

DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combinations of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The D2PAK is a surface mount power package capable of accommodating die size up to HEX-4. It provides the

Power MOSFET(Vdss=200V, Rds(on)=0.15ohm, Id=18A)

Description Fifth Generation HEXFET? Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well know

N-Channel Power MOSFETs 200V, 18A, 0.15ohm

Features ? Ultra Low On-Resistance - rDS(ON) = 0.102? (Typ), VGS = 10V ? Simulation Models - Temperature Compensated PSPICE? and SABER? Electrical Models - Spice and SABER? Thermal Impedance Models ? Peak Current vs Pulse Width Curve ? UIS Rateing Curve

Advanced Process Technology

Description The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 watts. The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry. The D2Pak is a surfac

N-Channel MOSFET Transistor

? DESCRITION ? Efficient and reliable device for use in a wide variety of applications ? FEATURES ? Static drain-source on-resistance: RDS(on) ≤150m? ? Enhancement mode ? Fast Switching Speed ? 100 avalanche tested ? Minimum Lot-to-Lot variations for robust device performance and re

Advanced Process Technology

Description The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 watts. The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry. The D2Pak is a surfac

N-Channel Power MOSFETs 200V, 18A, 0.15ohm

Features ? Ultra Low On-Resistance - rDS(ON) = 0.102? (Typ), VGS = 10V ? Simulation Models - Temperature Compensated PSPICE? and SABER? Electrical Models - Spice and SABER? Thermal Impedance Models ? Peak Current vs Pulse Width Curve ? UIS Rateing Curve

Power MOSFET(Vdss=200V, Rds(on)=0.15ohm, Id=18A)

Description Fifth Generation HEXFET? Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well know

Isc N-Channel MOSFET Transistor

? FEATURES ? With TO-262 packaging ? High speed switching ? Low gate input resistance ? Standard level gate drive ? Easy to use ? 100 avalanche tested ? Minimum Lot-to-Lot variations for robust device performance and reliable operation ? APPLICATIONS ? Power supply ? Switching applic

HEXFET? Power MOSFET

Description Fifth Generation HEXFET? Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well know

Advanced Process Technology Dynamic dv/dt Rating 175 Operating Temperature

Description Fifth Generation HEXFET? Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well know

Advanced Process Technology Dynamic dv/dt Rating 175 Operating Temperature

Description Fifth Generation HEXFET? Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well know

HEXFET? Power MOSFET

Description Fifth Generation HEXFET? Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well know

Power MOSFET(Vdss=200V, Rds(on)=0.15ohm, Id=18A)

Description Fifth Generation HEXFET? Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well know

N-Channel Power MOSFETs 200V, 18A, 0.15ohm

Features ? Ultra Low On-Resistance - rDS(ON) = 0.102? (Typ), VGS = 10V ? Simulation Models - Temperature Compensated PSPICE? and SABER? Electrical Models - Spice and SABER? Thermal Impedance Models ? Peak Current vs Pulse Width Curve ? UIS Rateing Curve

Advanced Process Technology

Description The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 watts. The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry. The D2Pak is a surfac

Advanced Process Technology Dynamic dv/dt Rating 175 Operating Temperature

Description Fifth Generation HEXFET? Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well know

HEXFET? Power MOSFET

Description Fifth Generation HEXFET? Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well know

Power MOSFET

DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation

Power MOSFET Dynamic dV/dt Rating Repetitive Avalanche Rated Fast Switching

DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation

N-channel TrenchMOS transistor

GENERAL DESCRIPTION N-channel, enhancement mode field-effect power transistor using Trench technology, intended for use in off-line switched mode power supplies, T.V. and computer monitor power supplies, d.c. to d.c. converters, motor control circuits and general purpose switching applications.

Power MOSFET

DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combinations of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The D2PAK is a surface mount power package capable of accommodating die size up to HEX-4. It provides the

Power MOSFET(Vdss=200V, Rds(on)=0.18ohm, Id=18A)

Description Third Generation HEXFETs from International Rectifier provide the designer with the best combinations of fast switching , ruggedized device design, low on-resistance and cost effectiveness. Surface Mount (IRF640S) Low-profile through-hole (IRF640L) Available in Tape &

Power MOSFET

FEATURES ? Surface mount ? Low-profile through-hole ? Available in tape and reel ? Dynamic dV/dt rating ? 150 °C operating temperature ? Fast switching ? Fully avalanche rated ? Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 Note? * This datas

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID=18A@ TC=25℃ ·Drain Source Voltage -VDSS=200V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 0.18mΩ(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

N - CHANNEL 200V - 0.150ohm - 18A TO-263 MESH OVERLAY] MOSFET

DESCRIPTION This power MOSFET is designed using he company’s consolidated strip layout-based MESH OVERLAY?process. This technology matches and improves the performances compared with standard parts from various sources. ■ TYPICAL RDS(on)= 0.150? ■ EXTREMELY HIGH dv/dt CAPABILITY ■

Power MOSFET

FEATURES ? Surface mount ? Low-profile through-hole ? Available in tape and reel ? Dynamic dV/dt rating ? 150 °C operating temperature ? Fast switching ? Fully avalanche rated ? Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 Note? * This datas

Power MOSFET

DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combinations of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The D2PAK is a surface mount power package capable of accommodating die size up to HEX-4. It provides the