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IRF640N價格

參考價格：￥5.7412

型號：IRF640NLPBF 品牌：INTERNATIONAL 備注：這里有IRF640N多少錢，2025年最近7天走勢，今日出價，今日競價，IRF640N批發(fā)/采購報價，IRF640N行情走勢銷售排行榜，IRF640N報價。
型號 功能描述 生產(chǎn)廠家 企業(yè) LOGO 操作
IRF640N

N-Channel Power MOSFETs 200V, 18A, 0.15ohm

Features ? Ultra Low On-Resistance - rDS(ON) = 0.102? (Typ), VGS = 10V ? Simulation Models - Temperature Compensated PSPICE? and SABER? Electrical Models - Spice and SABER? Thermal Impedance Models ? Peak Current vs Pulse Width Curve ? UIS Rateing Curve

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

IRF640N

Power MOSFET(Vdss=200V, Rds(on)=0.15ohm, Id=18A)

Description Fifth Generation HEXFET? Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well know

IRF

IRF640N

N-Channel MOSFET Transistor

? DESCRITION ? Efficient and reliable device for use in a wide variety of applications ? FEATURES ? Static drain-source on-resistance: RDS(on) ≤150m? ? Enhancement mode ? Fast Switching Speed ? 100 avalanche tested ? Minimum Lot-to-Lot variations for robust device performance and re

ISC

無錫固電

IRF640N

Advanced Process Technology

Description The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 watts. The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry. The D2Pak is a surfac

KERSEMI

IRF640N

N-Channel Power MOSFETs 200V, 18A, 0.15ohm

ONSEMI

安森美半導(dǎo)體

IRF640N

采用 TO-220 封裝的 200V 單 N 溝道 MOSFET

Infineon

英飛凌

IRF640N

N-Channel MOSFET Transistor

文件：338.66 Kbytes Page：2 Pages

ISC

無錫固電

IRF640N

Advanced Process Technology

文件：248.99 Kbytes Page：12 Pages

IRF

IRF640N

HEXFET Power MOSFET

文件：240.04 Kbytes Page：11 Pages

IRF

Power MOSFET(Vdss=200V, Rds(on)=0.15ohm, Id=18A)

Description Fifth Generation HEXFET? Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well know

IRF

N-Channel Power MOSFETs 200V, 18A, 0.15ohm

Features ? Ultra Low On-Resistance - rDS(ON) = 0.102? (Typ), VGS = 10V ? Simulation Models - Temperature Compensated PSPICE? and SABER? Electrical Models - Spice and SABER? Thermal Impedance Models ? Peak Current vs Pulse Width Curve ? UIS Rateing Curve

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

Isc N-Channel MOSFET Transistor

? FEATURES ? With TO-262 packaging ? High speed switching ? Low gate input resistance ? Standard level gate drive ? Easy to use ? 100 avalanche tested ? Minimum Lot-to-Lot variations for robust device performance and reliable operation ? APPLICATIONS ? Power supply ? Switching applic

ISC

無錫固電

Advanced Process Technology

Description The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 watts. The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry. The D2Pak is a surfac

KERSEMI

Advanced Process Technology Dynamic dv/dt Rating 175 Operating Temperature

Description Fifth Generation HEXFET? Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well know

KERSEMI

HEXFET? Power MOSFET

Description Fifth Generation HEXFET? Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well know

IRF

HEXFET? Power MOSFET

Description Fifth Generation HEXFET? Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well know

IRF

Advanced Process Technology Dynamic dv/dt Rating 175 Operating Temperature

Description Fifth Generation HEXFET? Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well know

KERSEMI

Advanced Process Technology

Description The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 watts. The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry. The D2Pak is a surfac

KERSEMI

N-Channel Power MOSFETs 200V, 18A, 0.15ohm

Features ? Ultra Low On-Resistance - rDS(ON) = 0.102? (Typ), VGS = 10V ? Simulation Models - Temperature Compensated PSPICE? and SABER? Electrical Models - Spice and SABER? Thermal Impedance Models ? Peak Current vs Pulse Width Curve ? UIS Rateing Curve

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

Power MOSFET(Vdss=200V, Rds(on)=0.15ohm, Id=18A)

Description Fifth Generation HEXFET? Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well know

IRF

HEXFET? Power MOSFET

Description Fifth Generation HEXFET? Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well know

IRF

Advanced Process Technology Dynamic dv/dt Rating 175 Operating Temperature

Description Fifth Generation HEXFET? Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well know

KERSEMI

HEXFET Power MOSFET

文件：240.04 Kbytes Page：11 Pages

IRF

N-Channel MOSFET Transistor

文件：338.66 Kbytes Page：2 Pages

ISC

無錫固電

Advanced Process Technology

文件：248.99 Kbytes Page：12 Pages

IRF

HEXFET Power MOSFET

文件：240.04 Kbytes Page：11 Pages

IRF

Advanced Process Technology

文件：341.59 Kbytes Page：11 Pages

IRF

Advanced Process Technology

文件：341.59 Kbytes Page：11 Pages

IRF

Advanced Process Technology

文件：341.59 Kbytes Page：11 Pages

IRF

Advanced Process Technology

文件：341.59 Kbytes Page：11 Pages

IRF

場效應(yīng)管

hxymos

華軒陽電子

Advanced Process Technology

文件：341.59 Kbytes Page：11 Pages

IRF

Advanced Process Technology

文件：248.99 Kbytes Page：12 Pages

IRF

HEXFET Power MOSFET

文件：240.04 Kbytes Page：11 Pages

IRF

Advanced Process Technology

文件：341.59 Kbytes Page：11 Pages

IRF

Advanced Process Technology

文件：341.59 Kbytes Page：11 Pages

IRF

Advanced Process Technology

文件：248.99 Kbytes Page：12 Pages

IRF

Advanced Process Technology

文件：341.59 Kbytes Page：11 Pages

IRF

ROD SEALS

?DESCRIPTION The BECA 640 profile is a double acting composite rod seal composed of a rubber O'Ring or square ring and a polyamide friction ring. ?APPLICATIONS Agriculture Mobile machinery Hydraulic cylinders

FRANCEJOINT

3M??Scotch? Transparent Film Tape 640

文件：567.23 Kbytes Page：6 Pages

3M

MINIATURE FUSEHOLDERS

文件：113.57 Kbytes Page：1 Pages

Littelfuse

力特

Quartz Stability

文件：141.46 Kbytes Page：3 Pages

OSCILENT

PULSE TRANSFORMERS

文件：155.55 Kbytes Page：1 Pages

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IRF640N產(chǎn)品屬性

  • 類型

    描述

  • 型號

    IRF640N

  • 功能描述

    MOSFET N-CH 200V 18A TO-220AB

  • RoHS

    否

  • 類別

    分離式半導(dǎo)體產(chǎn)品 >> FET - 單

  • 系列

    HEXFET®

  • 標(biāo)準(zhǔn)包裝

    1,000

  • 系列

    MESH OVERLAY™ FET

  • 型

    MOSFET N 通道，金屬氧化物 FET

  • 特點

    邏輯電平門

  • 漏極至源極電壓(Vdss)

    200V 電流 - 連續(xù)漏極(Id) @ 25°

  • C

    18A 開態(tài)Rds（最大）@ Id, Vgs @ 25°

  • C

    180 毫歐 @ 9A，10V Id 時的

  • Vgs(th)（最大）

    4V @ 250µA 閘電荷(Qg) @

  • Vgs

    72nC @ 10V 輸入電容(Ciss) @

  • Vds

    1560pF @ 25V 功率 -

  • 最大

    40W

  • 安裝類型

    通孔

  • 封裝/外殼

    TO-220-3 整包

  • 供應(yīng)商設(shè)備封裝

    TO-220FP

  • 包裝

    管件

更新時間：2025-9-13 22:50:00
IC供應(yīng)商 芯片型號 品牌 批號 封裝 庫存 備注 價格
IR
23+
FAX:6564815466
12000
全新原裝假一賠十
IRE
23+
T0-220
19526
原裝正品價格優(yōu)惠,長期優(yōu)勢供應(yīng)
INFINEON
23+
TO-220
10000
全新、原裝
IR
24+
TO-263
14769
保證進(jìn)口原裝現(xiàn)貨假一賠十
IR
23+
TO-220
65480
TO-220
23+
NA
15659
振宏微專業(yè)只做正品,假一罰百!
INFINEON/英飛凌
25+
TO-263
56890
明嘉萊只做原裝正品現(xiàn)貨
IR
25+23+
3TO-220
20819
絕對原裝正品全新進(jìn)口深圳現(xiàn)貨
IR
23+
TO/220
7000
絕對全新原裝!100%保質(zhì)量特價!請放心訂購!
IR
24+
TO-220
60700

IRF640N芯片相關(guān)品牌

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