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STW26NM60ND價(jià)格

參考價(jià)格：￥22.7027

型號(hào)：STW26NM60ND 品牌：STMicroelectronics 備注：這里有STW26NM60ND多少錢，2025年最近7天走勢(shì)，今日出價(jià)，今日競價(jià)，STW26NM60ND批發(fā)/采購報(bào)價(jià)，STW26NM60ND行情走勢(shì)銷售排行榜，STW26NM60ND報(bào)價(jià)。
型號(hào) 功能描述 生產(chǎn)廠家 企業(yè) LOGO 操作
STW26NM60ND

Low input capacitance and gate charge

Description These FDmesh? II Power MOSFETs with intrinsic fast-recovery body diode are produced using the second generation of MDmesh? technology. Utilizing a new strip-layout vertical structure, these revolutionary devices feature extremely low on-resistance and superior switching performance. T

STMICROELECTRONICS

意法半導(dǎo)體

STW26NM60ND

isc N-Channel MOSFET Transistor

文件：398.58 Kbytes Page：2 Pages

ISC

無錫固電

N-channel 600 V, 0.160 廓, 19 A PowerFLAT??8x8 HV ultra low gate charge MDmesh??II Power MOSFET

Description This device is an N-channel MDmesh? V Power MOSFET based on an innovative proprietary vertical process technology, which is combined with STMicroelectronics’ well-known PowerMESH? horizontal layout structure. The resulting product has extremely low on resistance, which is unmatched am

STMICROELECTRONICS

意法半導(dǎo)體

isc N-Channel MOSFET Transistor

DESCRIPTION ? Low Drain-Source On-Resistance FEATURES ? Drain Current –ID=20A@ TC=25℃ ? Drain Source Voltage- : VDSS= 600V(Min) ? Static Drain-Source On-Resistance : RDS(on) = 165mΩ (Max) ? 100 avalanche tested ? Minimum Lot-to-Lot variations for robust device performance and reliable opera

ISC

無錫固電

N-channel 600 V, 0.135 ohm typ., 20 A MDmesh II Power MOSFET in D2PAK, I2PAK, TO-220, TO-220FP and TO-247 packages

Description These devices are N-channel Power MOSFETs developed using the second generation of MDmesh? technology. This revolutionary Power MOSFET applies a new vertical structure to the company’s strip layout to yield a device with one of the world’s lowest on-resistance and gate charge, making

STMICROELECTRONICS

意法半導(dǎo)體

Low input capacitance and gate charge

Description These FDmesh? II Power MOSFETs with intrinsic fast-recovery body diode are produced using the second generation of MDmesh? technology. Utilizing a new strip-layout vertical structure, these revolutionary devices feature extremely low on-resistance and superior switching performance. T

STMICROELECTRONICS

意法半導(dǎo)體

isc N-Channel MOSFET Transistor

DESCRIPTION ? Low Drain-Source On-Resistance FEATURES ? Drain Current –ID=21A@ TC=25℃ ? Drain Source Voltage- : VDSS= 600V(Min) ? Static Drain-Source On-Resistance : RDS(on) = 175mΩ (Max) ? 100 avalanche tested ? Minimum Lot-to-Lot variations for robust device performance and reliable opera

ISC

無錫固電

STW26NM60ND產(chǎn)品屬性

  • 類型

    描述

  • 型號(hào)

    STW26NM60ND

  • 制造商

    STMicroelectronics

  • 功能描述

    MOSFET N-CH 600V 21A TO247

更新時(shí)間：2025-9-11 15:01:00
IC供應(yīng)商 芯片型號(hào) 品牌 批號(hào) 封裝 庫存 備注 價(jià)格
ST/意法
24+
TO-247
7850
只做原裝正品現(xiàn)貨或訂貨假一賠十!
ST/意法
24+
TO-247
39197
鄭重承諾只做原裝進(jìn)口現(xiàn)貨
ST/意法
25+
原廠原封可拆
54685
百分百原裝現(xiàn)貨有單來談
ST
25+
TO-247
12300
獨(dú)立分銷商 公司只做原裝 誠心經(jīng)營 免費(fèi)試樣正品保證
ST
22+
TO2473
9000
原廠渠道,現(xiàn)貨配單
ST/意法
24+
NA/
20000
優(yōu)勢(shì)代理渠道,原裝正品,可全系列訂貨開增值稅票
STMicroelectronics
24+
NA
3000
進(jìn)口原裝正品優(yōu)勢(shì)供應(yīng)
ST
23+
TO-247-3
16900
正規(guī)渠道,只有原裝!
ST/意法
24+
TO-247
30000
代理原裝現(xiàn)貨,價(jià)格優(yōu)勢(shì)。
ST/意法
24+
TO-247
6000
只做原裝，歡迎詢價(jià)，量大價(jià)優(yōu)

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