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型號(hào) 功能描述 生產(chǎn)廠家 企業(yè) LOGO 操作
STW26NM60N-H

N-channel 600 V, 0.135 Ω, 20 A TO-247 MDmesh? II Power MOSFET

Features ■ 100 avalanche tested ■ Low input capacitance and gate charge ■ Low gate input resistance Application ■ Switching applications Description This series of devices implements second generation MDmesh? technology. This revolutionary Power MOSFET associates a new vertical struc

STMICROELECTRONICS

意法半導(dǎo)體

N-channel 600 V, 0.160 廓, 19 A PowerFLAT??8x8 HV ultra low gate charge MDmesh??II Power MOSFET

Description This device is an N-channel MDmesh? V Power MOSFET based on an innovative proprietary vertical process technology, which is combined with STMicroelectronics’ well-known PowerMESH? horizontal layout structure. The resulting product has extremely low on resistance, which is unmatched am

STMICROELECTRONICS

意法半導(dǎo)體

isc N-Channel MOSFET Transistor

DESCRIPTION ? Low Drain-Source On-Resistance FEATURES ? Drain Current –ID=20A@ TC=25℃ ? Drain Source Voltage- : VDSS= 600V(Min) ? Static Drain-Source On-Resistance : RDS(on) = 165mΩ (Max) ? 100 avalanche tested ? Minimum Lot-to-Lot variations for robust device performance and reliable opera

ISC

無(wú)錫固電

N-channel 600 V, 0.135 ohm typ., 20 A MDmesh II Power MOSFET in D2PAK, I2PAK, TO-220, TO-220FP and TO-247 packages

Description These devices are N-channel Power MOSFETs developed using the second generation of MDmesh? technology. This revolutionary Power MOSFET applies a new vertical structure to the company’s strip layout to yield a device with one of the world’s lowest on-resistance and gate charge, making

STMICROELECTRONICS

意法半導(dǎo)體

isc N-Channel MOSFET Transistor

DESCRIPTION ? Low Drain-Source On-Resistance FEATURES ? Drain Current –ID=21A@ TC=25℃ ? Drain Source Voltage- : VDSS= 600V(Min) ? Static Drain-Source On-Resistance : RDS(on) = 175mΩ (Max) ? 100 avalanche tested ? Minimum Lot-to-Lot variations for robust device performance and reliable opera

ISC

無(wú)錫固電

Low input capacitance and gate charge

Description These FDmesh? II Power MOSFETs with intrinsic fast-recovery body diode are produced using the second generation of MDmesh? technology. Utilizing a new strip-layout vertical structure, these revolutionary devices feature extremely low on-resistance and superior switching performance. T

STMICROELECTRONICS

意法半導(dǎo)體

更新時(shí)間：2025-9-11 14:50:00
IC供應(yīng)商 芯片型號(hào) 品牌 批號(hào) 封裝 庫(kù)存 備注 價(jià)格
ST/意法
24+
TO-247
39197
鄭重承諾只做原裝進(jìn)口現(xiàn)貨
ST/意法
25+
原廠原封可拆
54685
百分百原裝現(xiàn)貨有單來(lái)談
ST/意法半導(dǎo)體
21+
TO-247-3
8860
只做原裝,質(zhì)量保證
ST
22+
TO2473
9000
原廠渠道,現(xiàn)貨配單
ST/意法
24+
NA/
20000
優(yōu)勢(shì)代理渠道,原裝正品,可全系列訂貨開(kāi)增值稅票
ST/意法半導(dǎo)體
24+
TO-247-3
6000
全新原裝深圳倉(cāng)庫(kù)現(xiàn)貨有單必成
ST
23+
TO-3P
16900
正規(guī)渠道,只有原裝!
ST/意法半導(dǎo)體
2020+
TO-247-3
7600
只做原裝正品,賣元器件不賺錢(qián)交個(gè)朋友
ST/意法
24+
TO-247
30000
代理原裝現(xiàn)貨,價(jià)格優(yōu)勢(shì)。
ST/意法
24+
TO-247
6000
只做原裝，歡迎詢價(jià)，量大價(jià)優(yōu)

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