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STF26NM60N價格

參考價格：￥8.2111

型號：STF26NM60N 品牌：STMicroelectronics 備注：這里有STF26NM60N多少錢，2025年最近7天走勢，今日出價，今日競價，STF26NM60N批發(fā)/采購報價，STF26NM60N行情走勢銷售排行榜，STF26NM60N報價。
型號 功能描述 生產(chǎn)廠家 企業(yè) LOGO 操作
STF26NM60N

isc N-Channel MOSFET Transistor

DESCRIPTION ? Low Drain-Source On-Resistance FEATURES ? Drain Current –ID=20A@ TC=25℃ ? Drain Source Voltage- : VDSS= 600V(Min) ? Static Drain-Source On-Resistance : RDS(on) = 165mΩ (Max) ? 100 avalanche tested ? Minimum Lot-to-Lot variations for robust device performance and reliable opera

ISC

無錫固電

STF26NM60N

N-channel 600 V, 0.135 ohm typ., 20 A MDmesh II Power MOSFET in D2PAK, I2PAK, TO-220, TO-220FP and TO-247 packages

Description These devices are N-channel Power MOSFETs developed using the second generation of MDmesh? technology. This revolutionary Power MOSFET applies a new vertical structure to the company’s strip layout to yield a device with one of the world’s lowest on-resistance and gate charge, making

STMICROELECTRONICS

意法半導(dǎo)體

STF26NM60N

N-Channel 650-V (D-S) Super Junction MOSFET

文件：1.15827 Mbytes Page：11 Pages

VBSEMI

微碧半導(dǎo)體

STF26NM60N

N溝道600 V、0.135 Ohm典型值、20 A MDmesh II功率MOSFET，TO-220FP封裝

STMICROELECTRONICS

意法半導(dǎo)體

Low input capacitance and gate charge

Description These FDmesh? II Power MOSFETs with intrinsic fast-recovery body diode are produced using the second generation of MDmesh? technology. Utilizing a new strip-layout vertical structure, these revolutionary devices feature extremely low on-resistance and superior switching performance. T

STMICROELECTRONICS

意法半導(dǎo)體

N-channel 600 V, 0.135 ?? 20 A MDmesh??II Power MOSFET in TO-220FP

Description This series of devices implements second generation MDmesh? technology. This revolutionary Power MOSFET associates a new vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitable for the most demanding h

STMICROELECTRONICS

意法半導(dǎo)體

N-channel 600 V, 0.145 Ohm typ., 21 A FDmesh(TM) II Power MOSFET (with fast diode) in TO-220FP package

STMICROELECTRONICS

意法半導(dǎo)體

N-channel 600 V, 0.160 廓, 19 A PowerFLAT??8x8 HV ultra low gate charge MDmesh??II Power MOSFET

Description This device is an N-channel MDmesh? V Power MOSFET based on an innovative proprietary vertical process technology, which is combined with STMicroelectronics’ well-known PowerMESH? horizontal layout structure. The resulting product has extremely low on resistance, which is unmatched am

STMICROELECTRONICS

意法半導(dǎo)體

isc N-Channel MOSFET Transistor

DESCRIPTION ? Low Drain-Source On-Resistance FEATURES ? Drain Current –ID=20A@ TC=25℃ ? Drain Source Voltage- : VDSS= 600V(Min) ? Static Drain-Source On-Resistance : RDS(on) = 165mΩ (Max) ? 100 avalanche tested ? Minimum Lot-to-Lot variations for robust device performance and reliable opera

ISC

無錫固電

N-channel 600 V, 0.135 ohm typ., 20 A MDmesh II Power MOSFET in D2PAK, I2PAK, TO-220, TO-220FP and TO-247 packages

Description These devices are N-channel Power MOSFETs developed using the second generation of MDmesh? technology. This revolutionary Power MOSFET applies a new vertical structure to the company’s strip layout to yield a device with one of the world’s lowest on-resistance and gate charge, making

STMICROELECTRONICS

意法半導(dǎo)體

isc N-Channel MOSFET Transistor

DESCRIPTION ? Low Drain-Source On-Resistance FEATURES ? Drain Current –ID=21A@ TC=25℃ ? Drain Source Voltage- : VDSS= 600V(Min) ? Static Drain-Source On-Resistance : RDS(on) = 175mΩ (Max) ? 100 avalanche tested ? Minimum Lot-to-Lot variations for robust device performance and reliable opera

ISC

無錫固電

Low input capacitance and gate charge

Description These FDmesh? II Power MOSFETs with intrinsic fast-recovery body diode are produced using the second generation of MDmesh? technology. Utilizing a new strip-layout vertical structure, these revolutionary devices feature extremely low on-resistance and superior switching performance. T

STMICROELECTRONICS

意法半導(dǎo)體

STF26NM60N產(chǎn)品屬性

  • 類型

    描述

  • 型號

    STF26NM60N

  • 功能描述

    MOSFET N-channel 600 V 20 A Mdmesh

  • RoHS

    否

  • 制造商

    STMicroelectronics

  • 晶體管極性

    N-Channel

  • 汲極/源極擊穿電壓

    650 V

  • 閘/源擊穿電壓

    25 V

  • 漏極連續(xù)電流

    130 A 電阻汲極/源極

  • RDS（導(dǎo)通）

    0.014 Ohms

  • 配置

    Single

  • 安裝風(fēng)格

    Through Hole

  • 封裝/箱體

    Max247

  • 封裝

    Tube

更新時間：2025-9-11 15:02:00
IC供應(yīng)商 芯片型號 品牌 批號 封裝 庫存 備注 價格
ST(意法)
24+
TO-220F(TO-220IS)
27048
原廠可訂貨,技術(shù)支持,直接渠道?？珊灡９┖贤?/div>
ST/意法
2450+
TO-220F
9850
只做原裝正品現(xiàn)貨或訂貨假一賠十!
ST/意法
25+
SMD
202459
明嘉萊只做原裝正品現(xiàn)貨
ST/意法
24+
TO-220F
2443
只做原廠渠道 可追溯貨源
ST(意法半導(dǎo)體)
2447
TO-220F(TO-220IS)
105000
50個/管一級代理專營品牌!原裝正品,優(yōu)勢現(xiàn)貨,長期
ST
25+23+
TO-220F
14927
絕對原裝正品全新進(jìn)口深圳現(xiàn)貨
ST/意法
2410+
TO-220F
30000
原裝正品.假一賠百.正規(guī)渠道.原廠追溯.
ST
24+
QFN
57000
鄭重承諾只做原裝進(jìn)口現(xiàn)貨
ST
21+
TO-220F
6880
只做原裝,質(zhì)量保證
ST
21+
10560
十年專營,原裝現(xiàn)貨,假一賠十

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