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STF26NM60ND價(jià)格

參考價(jià)格：￥21.9023

型號(hào)：STF26NM60ND 品牌：STMicroelectronics 備注：這里有STF26NM60ND多少錢(qián)，2025年最近7天走勢(shì)，今日出價(jià)，今日競(jìng)價(jià)，STF26NM60ND批發(fā)/采購(gòu)報(bào)價(jià)，STF26NM60ND行情走勢(shì)銷(xiāo)售排行榜，STF26NM60ND報(bào)價(jià)。
型號(hào) 功能描述 生產(chǎn)廠家 企業(yè) LOGO 操作
STF26NM60ND

Low input capacitance and gate charge

Description These FDmesh? II Power MOSFETs with intrinsic fast-recovery body diode are produced using the second generation of MDmesh? technology. Utilizing a new strip-layout vertical structure, these revolutionary devices feature extremely low on-resistance and superior switching performance. T

STMICROELECTRONICS

意法半導(dǎo)體

STF26NM60ND

N-channel 600 V, 0.145 Ohm typ., 21 A FDmesh(TM) II Power MOSFET (with fast diode) in TO-220FP package

STMICROELECTRONICS

意法半導(dǎo)體

N-channel 600 V, 0.160 廓, 19 A PowerFLAT??8x8 HV ultra low gate charge MDmesh??II Power MOSFET

Description This device is an N-channel MDmesh? V Power MOSFET based on an innovative proprietary vertical process technology, which is combined with STMicroelectronics’ well-known PowerMESH? horizontal layout structure. The resulting product has extremely low on resistance, which is unmatched am

STMICROELECTRONICS

意法半導(dǎo)體

isc N-Channel MOSFET Transistor

DESCRIPTION ? Low Drain-Source On-Resistance FEATURES ? Drain Current –ID=20A@ TC=25℃ ? Drain Source Voltage- : VDSS= 600V(Min) ? Static Drain-Source On-Resistance : RDS(on) = 165mΩ (Max) ? 100 avalanche tested ? Minimum Lot-to-Lot variations for robust device performance and reliable opera

ISC

無(wú)錫固電

N-channel 600 V, 0.135 ohm typ., 20 A MDmesh II Power MOSFET in D2PAK, I2PAK, TO-220, TO-220FP and TO-247 packages

Description These devices are N-channel Power MOSFETs developed using the second generation of MDmesh? technology. This revolutionary Power MOSFET applies a new vertical structure to the company’s strip layout to yield a device with one of the world’s lowest on-resistance and gate charge, making

STMICROELECTRONICS

意法半導(dǎo)體

isc N-Channel MOSFET Transistor

DESCRIPTION ? Low Drain-Source On-Resistance FEATURES ? Drain Current –ID=21A@ TC=25℃ ? Drain Source Voltage- : VDSS= 600V(Min) ? Static Drain-Source On-Resistance : RDS(on) = 175mΩ (Max) ? 100 avalanche tested ? Minimum Lot-to-Lot variations for robust device performance and reliable opera

ISC

無(wú)錫固電

Low input capacitance and gate charge

Description These FDmesh? II Power MOSFETs with intrinsic fast-recovery body diode are produced using the second generation of MDmesh? technology. Utilizing a new strip-layout vertical structure, these revolutionary devices feature extremely low on-resistance and superior switching performance. T

STMICROELECTRONICS

意法半導(dǎo)體

STF26NM60ND產(chǎn)品屬性

  • 類型

    描述

  • 型號(hào)

    STF26NM60ND

  • 制造商

    STMicroelectronics

  • 功能描述

    MOSFET N-CH 600V 21A TO220FP

更新時(shí)間：2025-9-11 17:39:00
IC供應(yīng)商 芯片型號(hào) 品牌 批號(hào) 封裝 庫(kù)存 備注 價(jià)格
ST/意法
2015+
TO-220F
100
一級(jí)代理,專注軍工、汽車(chē)、醫(yī)療、工業(yè)、新能源、電力
ST/意法
22+
SMD
30000
十七年VIP會(huì)員,誠(chéng)信經(jīng)營(yíng)，一手貨源，原裝正品可零售！
ST/意法
21+
TO-220F
5000
優(yōu)勢(shì)供應(yīng) 實(shí)單必成 可開(kāi)增值稅13點(diǎn)
SST
原廠封裝
9800
原裝進(jìn)口公司現(xiàn)貨假一賠百
ST/意法
24+
N/A
14280
強(qiáng)勢(shì)渠道訂貨 7-10天
ST(意法半導(dǎo)體)
24+
TO-220F
7828
支持大陸交貨,美金交易。原裝現(xiàn)貨庫(kù)存。
ST/意法
23+
TO-220F
8000
原裝正品實(shí)單必成
ST
22+
TO2203
9000
原廠渠道,現(xiàn)貨配單
ST
25+
TO220
70
只做原裝進(jìn)口!正品支持實(shí)單!
ST
23+
TO2203
8000
只做原裝現(xiàn)貨

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