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型號(hào) 功能描述 生產(chǎn)廠家 企業(yè) LOGO 操作
STD30NE06L

N - CHANNEL 60V - 0.025 ohm - 30A TO-252

DESCRIPTION This Power MOSFET is the latest development of STMicroelectronics unique Single Feature Size? strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a remark

STMICROELECTRONICS

意法半導(dǎo)體

STD30NE06L

N - CHANNEL 60V - 0.025 ohm - 30A TO-252 STripFET POWER MOSFET

DESCRIPTION This Power MOSFET is the latest development of STMicroelectronics unique Single Feature Size? strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a remark

STMICROELECTRONICS

意法半導(dǎo)體

STD30NE06L

N - CHANNEL 60V - 0.025 ohm - 30A TO-252 STripFET POWER MOSFET

STMICROELECTRONICS

意法半導(dǎo)體

N - CHANNEL 60V - 0.025 ohm - 30A - DPAK STripFET POWER MOSFET

DESCRIPTION This Power Mosfet is the latest development of SGS-THOMSON unique Single Feature Size? strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalance characteristics and less critical alignment steps therefore a remarkable ma

STMICROELECTRONICS

意法半導(dǎo)體

N - CHANNEL 60V - 0.025 ohm - 30A TO-252

DESCRIPTION This Power MOSFET is the latest development of STMicroelectronics unique Single Feature Size? strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a remark

STMICROELECTRONICS

意法半導(dǎo)體

N-Channel 60-V (D-S) MOSFET

FEATURES ? TrenchFET? Power MOSFET ? 175 °C Junction Temperature

VBSEMI

微碧半導(dǎo)體

N-Channel 60-V (D-S) MOSFET

FEATURES ? TrenchFET? Power MOSFET ? 175 °C Junction Temperature

VBSEMI

微碧半導(dǎo)體

N-Channel 60-V (D-S) MOSFET

FEATURES ? TrenchFET? Power MOSFET ? 175 °C Junction Temperature

VBSEMI

微碧半導(dǎo)體

N - CHANNEL 60V - 0.042 ohm - 30A - TO-220/TO-220FP STripFET POWER MOSFET

DESCRIPTION This Power Mosfet is the latest development of STMicroelectronics unique ”Single Feature Size” process whereby a single body is implanted on a strip layout structure. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalance characteristics a

STMICROELECTRONICS

意法半導(dǎo)體

N - CHANNEL 60V - 0.35ohm - 30A - D2PAK STripFET] POWER MOSFET

文件：47.69 Kbytes Page：6 Pages

STMICROELECTRONICS

意法半導(dǎo)體

STD30NE06L產(chǎn)品屬性

  • 類型

    描述

  • 型號(hào)

    STD30NE06L

  • 功能描述

    MOSFET N-Ch 60 Volt 30 Amp

  • RoHS

    否

  • 制造商

    STMicroelectronics

  • 晶體管極性

    N-Channel

  • 汲極/源極擊穿電壓

    650 V

  • 閘/源擊穿電壓

    25 V

  • 漏極連續(xù)電流

    130 A 電阻汲極/源極

  • RDS（導(dǎo)通）

    0.014 Ohms

  • 配置

    Single

  • 安裝風(fēng)格

    Through Hole

  • 封裝/箱體

    Max247

  • 封裝

    Tube

更新時(shí)間：2025-9-13 18:36:00
IC供應(yīng)商 芯片型號(hào) 品牌 批號(hào) 封裝 庫存 備注 價(jià)格
ST
22+
TO2523 DPak (2 Leads + Tab) SC
9000
原廠渠道,現(xiàn)貨配單
ST
23+
TO-252
8795
ST
23+
NA
2274
專做原裝正品,假一罰百!
ST
25+
TO-252
4500
全新原裝、誠信經(jīng)營、公司現(xiàn)貨銷售!
ST
24+
TO-252
90000
一級(jí)代理商進(jìn)口原裝現(xiàn)貨、假一罰十價(jià)格合理
STD30NE06L
1108
1108
ST
17+
TO-252
6200
ST
1236+;12+
TO-252
312
一級(jí)代理,專注軍工、汽車、醫(yī)療、工業(yè)、新能源、電力
SST
原廠封裝
9800
原裝進(jìn)口公司現(xiàn)貨假一賠百
ST
24+
TO252DPAK
8866

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