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STB12NM50價格

參考價格：￥12.4587

型號：STB12NM50N 品牌：STMicroelectronics 備注：這里有STB12NM50多少錢，2025年最近7天走勢，今日出價，今日競價，STB12NM50批發(fā)/采購報價，STB12NM50行情走勢銷售排行榜，STB12NM50報價。
型號 功能描述 生產(chǎn)廠家&企業(yè) LOGO 操作
STB12NM50

N-CHANNEL500V-0.32ohm-12ATO-220/FP/D2PAK/I2PAK/TO-247 FDmesh??Power MOSFET with FAST DIODE

Description The FDmesh? associates all advantages of reduced on-resistance and fast switching with an intrinsic fast-recovery body diode. It is therefore strongly recommended for bridge topologies, in particular ZVS phase-shift converters. General features ■ 100 avalanche tested ■ High dv/dt a

STMICROELECTRONICS

意法半導(dǎo)體

STB12NM50

N-CHANNEL 500V - 0.3W - 12A TO-220/TO-220FP/I PAK MDmesh]Power MOSFET

Description The MDmesh? is a new revolutionary MOSFET technology that associates the Multiple Drain process with the Company’s PowerMESH? horizontal layout. The resulting product has an outstanding low on-resistance, impressively high dv/dt and excellent avalanche characteristics. The adoption of

STMICROELECTRONICS

意法半導(dǎo)體

STB12NM50

N-channel 550V @ tjmax - 0.30廓 - 12A TO-220/FP/D2/I2PAK MDmesh??Power MOSFET

文件：544.65 Kbytes Page：17 Pages

STMICROELECTRONICS

意法半導(dǎo)體

STB12NM50

N-Channel 650 V (D-S) MOSFET

文件：1.040069 Mbytes Page：8 Pages

VBSEMI

微碧半導(dǎo)體

N-CHANNEL 500V - 0.3W - 12A TO-220/TO-220FP/I PAK MDmesh]Power MOSFET

Description The MDmesh? is a new revolutionary MOSFET technology that associates the Multiple Drain process with the Company’s PowerMESH? horizontal layout. The resulting product has an outstanding low on-resistance, impressively high dv/dt and excellent avalanche characteristics. The adoption of

STMICROELECTRONICS

意法半導(dǎo)體

N-CHANNEL500V-0.32ohm-12ATO-220/FP/D2PAK/I2PAK/TO-247 FDmesh??Power MOSFET with FAST DIODE

Description The FDmesh? associates all advantages of reduced on-resistance and fast switching with an intrinsic fast-recovery body diode. It is therefore strongly recommended for bridge topologies, in particular ZVS phase-shift converters. General features ■ 100 avalanche tested ■ High dv/dt a

STMICROELECTRONICS

意法半導(dǎo)體

N-CHANNEL500V-0.32ohm-12ATO-220/FP/D2PAK/I2PAK/TO-247 FDmesh??Power MOSFET with FAST DIODE

Description The FDmesh? associates all advantages of reduced on-resistance and fast switching with an intrinsic fast-recovery body diode. It is therefore strongly recommended for bridge topologies, in particular ZVS phase-shift converters. General features ■ 100 avalanche tested ■ High dv/dt a

STMICROELECTRONICS

意法半導(dǎo)體

N-CHANNEL500V-0.32ohm-12ATO-220/FP/D2PAK/I2PAK/TO-247 FDmesh??Power MOSFET with FAST DIODE

Description The FDmesh? associates all advantages of reduced on-resistance and fast switching with an intrinsic fast-recovery body diode. It is therefore strongly recommended for bridge topologies, in particular ZVS phase-shift converters. General features ■ 100 avalanche tested ■ High dv/dt a

STMICROELECTRONICS

意法半導(dǎo)體

N-channel 500V - 0.29廓 - 11A - TO-220 /FP- D2PAK - DPAK Second generation MDmesh??Power MOSFET

Description This series of devices is realized with the second generation of MDmesh? technology. This revolutionary Power MOSFET associates a new vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitable for the mos

STMICROELECTRONICS

意法半導(dǎo)體

N-channel 500 V, 0.29 廓, 11 A, FDmesh??II Power MOSFET (with fast diode), D2PAK, DPAK

Description FDmesh? technology combines the MDmesh? features with an intrinsic fast-recovery body diode. The resulting product has reduced on resistance and fast switching commutations, making it especially suitable for bridge topologies where low trr is required. ■ 100 avalanche tested ■ Low i

STMICROELECTRONICS

意法半導(dǎo)體

N-CHANNEL 500V - 0.3W - 12A TO-220/TO-220FP/I PAK MDmesh]Power MOSFET

Description The MDmesh? is a new revolutionary MOSFET technology that associates the Multiple Drain process with the Company’s PowerMESH? horizontal layout. The resulting product has an outstanding low on-resistance, impressively high dv/dt and excellent avalanche characteristics. The adoption of

STMICROELECTRONICS

意法半導(dǎo)體

isc N-Channel MOSFET Transistor

文件：358.36 Kbytes Page：2 Pages

ISC

無錫固電

N-channel 550V @ tjmax - 0.30廓 - 12A TO-220/FP/D2/I2PAK MDmesh??Power MOSFET

文件：544.65 Kbytes Page：17 Pages

STMICROELECTRONICS

意法半導(dǎo)體

isc N-Channel MOSFET Transistor

文件：313.72 Kbytes Page：2 Pages

ISC

無錫固電

N-channel 500V - 0.32廓 - 12A - TO-220/FP - D2/I2PAK - TO-247 FDmesh??Power MOSFET (with fast diode)

文件：466.66 Kbytes Page：18 Pages

STMICROELECTRONICS

意法半導(dǎo)體

N-channel 500V - 0.32廓 - 12A - TO-220/FP - D2/I2PAK - TO-247 FDmesh??Power MOSFET (with fast diode)

文件：466.66 Kbytes Page：18 Pages

STMICROELECTRONICS

意法半導(dǎo)體

N-channel 500V - 0.32廓 - 12A - TO-220/FP - D2/I2PAK - TO-247 FDmesh??Power MOSFET (with fast diode)

文件：466.66 Kbytes Page：18 Pages

STMICROELECTRONICS

意法半導(dǎo)體

N-channel 500 V, 0.29 廓, 11 A MDmesh??II Power MOSFET TO-220 - DPAK - D2PAK - I2PAK - TO-220FP

文件：588.5 Kbytes Page：19 Pages

STMICROELECTRONICS

意法半導(dǎo)體

N-Channel 650 V (D-S) MOSFET

文件：1.04006 Mbytes Page：8 Pages

VBSEMI

微碧半導(dǎo)體

N-channel 500 V, 0.29 廓, 11 A MDmesh??II Power MOSFET TO-220 - DPAK - D2PAK - I2PAK - TO-220FP

文件：588.5 Kbytes Page：19 Pages

STMICROELECTRONICS

意法半導(dǎo)體

isc N-Channel MOSFET Transistor

文件：313.32 Kbytes Page：2 Pages

ISC

無錫固電

N-Channel 650 V (D-S) MOSFET

文件：1.04005 Mbytes Page：8 Pages

VBSEMI

微碧半導(dǎo)體

N-channel 500V, 0.29 OHM, 11A, FDmesh II Power MOSFET (with fast diode) in D2PAK, DPAK, TO-220FP

文件：1.03153 Mbytes Page：16 Pages

STMICROELECTRONICS

意法半導(dǎo)體

N-channel 500V, 0.29 OHM, 11A, FDmesh II Power MOSFET (with fast diode) in D2PAK, DPAK, TO-220FP

文件：1.03153 Mbytes Page：16 Pages

STMICROELECTRONICS

意法半導(dǎo)體

N-channel 550V @ tjmax - 0.30廓 - 12A TO-220/FP/D2/I2PAK MDmesh??Power MOSFET

文件：544.65 Kbytes Page：17 Pages

STMICROELECTRONICS

意法半導(dǎo)體

N-Channel 650 V (D-S) MOSFET

文件：1.04003 Mbytes Page：8 Pages

VBSEMI

微碧半導(dǎo)體

N-channel 550V @ tjmax - 0.30廓 - 12A TO-220/FP/D2/I2PAK MDmesh??Power MOSFET

文件：544.65 Kbytes Page：17 Pages

STMICROELECTRONICS

意法半導(dǎo)體

N-Channel 650 V (D-S) MOSFET

文件：1.039369 Mbytes Page：8 Pages

VBSEMI

微碧半導(dǎo)體

N-channel 500 V, 0.29 廓, 11 A MDmesh??II Power MOSFET TO-220 - DPAK - D2PAK - I2PAK - TO-220FP

文件：588.5 Kbytes Page：19 Pages

STMICROELECTRONICS

意法半導(dǎo)體

N-channel 550V @ tjmax - 0.30廓 - 12A TO-220/FP/D2/I2PAK MDmesh??Power MOSFET

文件：544.65 Kbytes Page：17 Pages

STMICROELECTRONICS

意法半導(dǎo)體

N-channel 500V - 0.32廓 - 12A - TO-220/FP - D2/I2PAK - TO-247 FDmesh??Power MOSFET (with fast diode)

文件：466.66 Kbytes Page：18 Pages

STMICROELECTRONICS

意法半導(dǎo)體

STB12NM50產(chǎn)品屬性

  • 類型

    描述

  • 型號

    STB12NM50

  • 制造商

    STMicroelectronics

更新時間：2025-9-10 23:01:00
IC供應(yīng)商 芯片型號 品牌 批號 封裝 庫存 備注 價格
ST(意法)
24+
NA/
8735
原廠直銷,現(xiàn)貨供應(yīng),賬期支持!
ST
2016+
TO-262
3500
只做原裝,假一罰十,公司可開17%增值稅發(fā)票!
ST
23+
原盒原包裝
33000
全新原裝假一賠十
ST
25+
TO263
400
百分百原裝正品 真實公司現(xiàn)貨庫存 本公司只做原裝 可
ST/意法
22+
SOT-263
100000
代理渠道/只做原裝/可含稅
ST/意法
25+
TO-263
32360
ST/意法全新特價STB12NM50T4即刻詢購立享優(yōu)惠#長期有貨
ST(意法半導(dǎo)體)
2024+
NA
500000
誠信服務(wù),絕對原裝原盤
ST
11+
TO-263
4200
原裝現(xiàn)貨價格有優(yōu)勢量多可發(fā)貨
ST
04+
TO-263
10
一級代理,專注軍工、汽車、醫(yī)療、工業(yè)、新能源、電力
ST
24+
TO-263
6000
全新原裝深圳倉庫現(xiàn)貨有單必成

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STB12NM50規(guī)格書下載地址

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