位置：首頁 > IC中文資料第603頁 > SI2301
SI2301價格
參考價格：￥0.5460
型號：SI2301BDS 品牌：VISHAY 備注：這里有SI2301多少錢，2025年最近7天走勢，今日出價，今日競價，SI2301批發(fā)/采購報價，SI2301行情走勢銷售排行榜，SI2301報價。| 型號 | 功能描述 | 生產(chǎn)廠家 企業(yè) | LOGO | 操作 |
|---|---|---|---|---|
SI2301 | P-Channel Enhancement Mode Field Effect Transistor Features ? Halogen free available upon request by adding suffix -HF ? -20V,-2.8A, RDS(ON)=120mΩ@VGS=-4.5V RDS(ON)=150mΩ@VGS=-2.5V ? High dense cell design for extremely low RDS(ON) ? Rugged and reliable ? High Speed Switching ? SOT-23 Package ? Marking Code: S1 ? Epox | MCC |   | |
SI2301 | P-Channel Enhancement Mode MOSFET Feature ● -20V/-3A, RDS(ON) = 120mΩ(MAX) @VGS = -4.5V. RDS(ON) = 150mΩ(MAX) @VGS = -2.5V. ● Super High dense cell design for extremely low RDS(ON) ● Reliable and Rugged ● SOT-23 for Surface Mount Package Applications ● Power Management Portable Equipment and Battery | ZPSEMIZP Semiconductor 至尚臻品 | | |
SI2301 | High dense cell design for extremely low RDS(ON) Plastic-Encapsulate Mosfets FEATURES ? High dense cell design for extremely low RDS(ON) ? Rugged and reliable ? Case Material: Molded Plastic. | MAKOSEMIMAKO SEMICONDUCTOR CO.,LIMITED 美科半導體美科半導體股份（香港）有限公司 | | |
SI2301 | P- CHANNEL MOSFET in a SOT-23 Plastic Package Descriptions P- CHANNEL MOSFET in a SOT-23 Plastic Package. Features Trench FET Power MOSFET 100 Rg Tested. Applications Primarily the display screen drive applications. | FOSHAN 藍箭電子 | | |
SI2301 | Plastic-Encapsulate Mosfets Plastic-Encapsulate Mosfets FEATURES ? High dense cell design for extremely low RDS(ON) ? Rugged and reliable ? Case Material: Molded Plastic. | HOTTECHGuangdong Hottech Co. Ltd. 合科泰深圳市合科泰電子有限公司 | | |
SI2301 | Small Signal MOSFETS | MCC | | |
SI2301 | P-Channel Enhancement Mode Field Effect Transistor 文件：330.46 Kbytes Page：5 Pages | MCC | | |
P-Channel 20-V(D-S) MOSFET FEATURE TrenchFET Power MOSFET APPLICATION Load Switch for Portable Devices DC/DC Converter | UMWGuangdong Youtai Semiconductor Co., Ltd. 友臺半導體廣東友臺半導體有限公司 | | ||
P-Channel 20-V(D-S) MOSFET FEATURE TrenchFET Power MOSFET APPLICATION Load Switch for Portable Devices DC/DC Converter | EVVOSEMI 翊歐 | | ||
P-Channel Enhancement-Mode MOS FETs Application @Battery protection @ Load switch @ Power management | TECHPUBLIC 臺舟電子 | | ||
P-Channel 2.5-V (G-S) MOSFET P-Channel 2.5-V (G-S) MOSFET | VishayVishay Siliconix 威世科技威世科技半導體 | | ||
P-Channel 20-V(D-S) MOSFET FEATURE TrenchFET Power MOSFET APPLICATION Load Switch for Portable Devices DC/DC Converter | UMWGuangdong Youtai Semiconductor Co., Ltd. 友臺半導體廣東友臺半導體有限公司 | | ||
MOSFET FEATURE TrenchFET Power MOSFET APPLICATION Load Switch for Portable Devices DC/DC Converter | EVVOSEMI 翊歐 | | ||
P-Channel 2.5-V (G-S) MOSFET Description: P-Channel, 20-V (D-S) MOSFET Package: SOT-23 Pin Out: Identical | VishayVishay Siliconix 威世科技威世科技半導體 | | ||
P-Channel 2.5-V (G-S) MOSFET Description: P-Channel, 20-V (D-S) MOSFET Package: SOT-23 Pin Out: Identical | VishayVishay Siliconix 威世科技威世科技半導體 | | ||
P-Channel 2.5 V (G-S) MOSFET Description: P-Channel, 20-V (D-S) MOSFET Package: SOT-23 Pin Out: Identical | VishayVishay Siliconix 威世科技威世科技半導體 | | ||
P-Channel 2.5 V (G-S) MOSFET Description: P-Channel, 20-V (D-S) MOSFET Package: SOT-23 Pin Out: Identical | VishayVishay Siliconix 威世科技威世科技半導體 | | ||
P-Channel Enhancement MOSFET ■ Features ● VDS (V) =-20V ● RDS(ON) | KEXIN 科信電子 | | ||
P-Channel Enhancement-Mode MOS FETs Application @Batery protection @Load switch @Power management | TECHPUBLIC 臺舟電子 | | ||
P-Channel Enhancement MOSFET ■ Features ● VDS (V) =-20V ● RDS(ON) | KEXIN 科信電子 | | ||
P-Channel MOSFET ■ Features ● VDS (V) =-20V ● RDS(ON) | KEXIN 科信電子 | | ||
P-Channel MOSFET ■ Features ● VDS (V) =-20V ● RDS(ON) | KEXIN 科信電子 | | ||
P-Channel 2.5-V (G-S) MOSFET Description: P-Channel, 20-V (D-S) MOSFET Package: SOT-23 Pin Out: Identical | VishayVishay Siliconix 威世科技威世科技半導體 | | ||
P-Channel 2.5 V (G-S) MOSFET Description: P-Channel, 20-V (D-S) MOSFET Package: SOT-23 Pin Out: Identical | VishayVishay Siliconix 威世科技威世科技半導體 | | ||
P-Channel 2.5 V (G-S) MOSFET Description: P-Channel, 20-V (D-S) MOSFET Package: SOT-23 Pin Out: Identical | VishayVishay Siliconix 威世科技威世科技半導體 | | ||
P-Channel 20 V (D-S) MOSFET FEATURES ? Halogen-free According to IEC 61249-2-21 Definition ? TrenchFET? Power MOSFET ? Compliant to RoHS Directive 2002/95/EC APPLICATIONS ? Load Switch | VishayVishay Siliconix 威世科技威世科技半導體 | | ||
P-Channel 20-V (D-S) MOSFET Description: P-Channel, 20-V (D-S) MOSFET Package: SOT-23 Pin Out: Identical | VishayVishay Siliconix 威世科技威世科技半導體 | | ||
P-Channel Enhancement-Mode MOS FETs Application @Battery protection ?Load switch @ Power management | TECHPUBLIC 臺舟電子 | | ||
P-Channel 20 V (D-S) MOSFET FEATURES ? Halogen-free According to IEC 61249-2-21 Definition ? TrenchFET? Power MOSFET ? Compliant to RoHS Directive 2002/95/EC APPLICATIONS ? Load Switch | VishayVishay Siliconix 威世科技威世科技半導體 | | ||
P-Channel 20-V (D-S) MOSFET Description: P-Channel, 20-V (D-S) MOSFET Package: SOT-23 Pin Out: Identical | VishayVishay Siliconix 威世科技威世科技半導體 | | ||
P-Channel 20-V (D-S) MOSFET Description: P-Channel, 20-V (D-S) MOSFET Package: SOT-23 Pin Out: Identical | VishayVishay Siliconix 威世科技威世科技半導體 | | ||
P-Channel 1.25-W, 2.5-V MOSFET PRODUCT SUMMARY VDS (V)? ? ? ? ? ? ? ? ?rDS(on) (Ω)? ? ? ? ? ? ? ? ID (A) ? -20? ? ? ? ? ? ? ? 0.130 @ VGS = -4.5 V? ? ? -2.3 ? ? ? ? ? ? ? ? ? ? ? ?0.190 @ VGS = -2.5 V? ? ? -1.9 | VishayVishay Siliconix 威世科技威世科技半導體 | | ||
P-Channel Enhancement-Mode MOS FETs Application Battery protection Load switch Power management | TECHPUBLIC 臺舟電子 | | ||
P-Channel Enhancement MOSFET ■ Features ● VDS (V) =-20V ● RDS(ON) | KEXIN 科信電子 | | ||
P-Channel Enhancement MOSFET ■ Features ● VDS (V) =-20V ● RDS(ON) | KEXIN 科信電子 | | ||
P-Channel MOSFET ■ Features ● VDS (V) =-20V ● RDS(ON) | KEXIN 科信電子 | | ||
P-Channel MOSFET ■ Features ● VDS (V) =-20V ● RDS(ON) | KEXIN 科信電子 | | ||
P-Channel 1.25-W, 2.5-V MOSFET PRODUCT SUMMARY VDS (V)? ? ? ? ? ? ? ? ?rDS(on) (Ω)? ? ? ? ? ? ? ? ID (A) ? -20? ? ? ? ? ? ? ? 0.130 @ VGS = -4.5 V? ? ? -2.3 ? ? ? ? ? ? ? ? ? ? ? ?0.190 @ VGS = -2.5 V? ? ? -1.9 | VishayVishay Siliconix 威世科技威世科技半導體 | | ||
P-Channel Enhancement Mode Field Effect Transistor 文件：330.46 Kbytes Page：5 Pages | MCC | | ||
P-Channel Enhancement Mode Field Effect Transistor 文件：267.82 Kbytes Page：5 Pages | MCC | | ||
P-Channel Enhancement Mode Field Effect Transistor 文件：285.47 Kbytes Page：5 Pages | MCC | | ||
Triple-Supply Power Management IC for Powering FPGAs and DSPs 文件：1.31298 Mbytes Page：29 Pages | TI 德州儀器 | | ||
P-Channel 2.5-V (G-S) MOSFET | VishayVishay Siliconix 威世科技威世科技半導體 | | ||
P-Channel 20-V (D-S) MOSFET 文件：1.03517 Mbytes Page：9 Pages | VBSEMI 微碧半導體 | | ||
Small Signal MOSFETS | MCC | | ||
P-Channel 2.5-V (G-S) MOSFET 文件：93.77 Kbytes Page：6 Pages | VishayVishay Siliconix 威世科技威世科技半導體 | | ||
P-Channel 2.5 V (G-S) MOSFET 文件：180.06 Kbytes Page：8 Pages | VishayVishay Siliconix 威世科技威世科技半導體 | | ||
P-Channel 2.5-V (G-S) MOSFET 文件：93.77 Kbytes Page：6 Pages | VishayVishay Siliconix 威世科技威世科技半導體 | | ||
P-Channel 2.5 V (G-S) MOSFET 文件：180.06 Kbytes Page：8 Pages | VishayVishay Siliconix 威世科技威世科技半導體 | | ||
P-Channel 20-V (D-S) MOSFET 文件：1.03515 Mbytes Page：9 Pages | VBSEMI 微碧半導體 | | ||
P-Channel 20 V (D-S) MOSFET 文件：165.81 Kbytes Page：8 Pages | VishayVishay Siliconix 威世科技威世科技半導體 | | ||
P-Channel 20 V (D-S) MOSFET 文件：165.81 Kbytes Page：8 Pages | VishayVishay Siliconix 威世科技威世科技半導體 | | ||
P-Channel 20 V (D-S) MOSFET 文件：203.38 Kbytes Page：9 Pages | VishayVishay Siliconix 威世科技威世科技半導體 | | ||
P-Channel 20 V (D-S) MOSFET 文件：203.38 Kbytes Page：9 Pages | VishayVishay Siliconix 威世科技威世科技半導體 | | ||
P-Channel 20-V (D-S) MOSFET 文件：1.03514 Mbytes Page：9 Pages | VBSEMI 微碧半導體 | | ||
P-Channel 20-V (D-S) MOSFET 文件：1.035119 Mbytes Page：9 Pages | VBSEMI 微碧半導體 | | ||
Vibrating level switch The device Type 8110 is a filling level switch for liquids, using a tuning fork as the sensor element. It is designed for industrial use in all areas of process technology and can be used in liquids. Typical applications are overflow or run-dry protection. The small tuning fork (40 mm in lengt | BURKERT 寶帝流體控制系統(tǒng) | | ||
1.5 Watt - 20 Volts, Class C Microwave 2300 MHz GENERAL DESCRIPTION The 2301 is a COMMON BASE transistor capable of providing 1.5 Watts Class C, RF output power at 2300 MHz. Gold metalization and diffused ballasting are used to provide high reliability and supreme ruggedness. The transistor uses a fully hermetic High Temperature Solder Sealed | GHZTECH | | ||
SOT-23 Plastic-Encapsulate MOSFETS 文件：5.03147 Mbytes Page：5 Pages | DGNJDZ 南晶電子 | | ||
10V P-Channel Enhanced MOS FET 文件：171.02 Kbytes Page：3 Pages | FUMAN 富滿微 | |
SI2301產(chǎn)品屬性
- 類型
描述
- 型號
SI2301
- 功能描述
MOSFET -20V -2.8A
- RoHS
否
- 制造商
STMicroelectronics
- 晶體管極性
N-Channel
- 汲極/源極擊穿電壓
650 V
- 閘/源擊穿電壓
25 V
- 漏極連續(xù)電流
130 A 電阻汲極/源極
- RDS（導通）
0.014 Ohms
- 配置
Single
- 安裝風格
Through Hole
- 封裝/箱體
Max247
- 封裝
Tube
| IC供應商 | 芯片型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
|---|---|---|---|---|---|---|---|
VISHAY(威世) |
24+ |
SOT-23-3 |
9908 |
支持大陸交貨,美金交易。原裝現(xiàn)貨庫存。 |
|||
VISHAY/威世 |
24+ |
SOT-23 |
502026 |
免費送樣原盒原包現(xiàn)貨一手渠道聯(lián)系 |
|||
VISHAY/威世 |
24+ |
SOT-23 |
56846 |
只做原廠渠道 可追溯貨源 |
|||
MCC |
2018 |
SOT-23 |
1120 |
全新、原裝 |
|||
VISHAY/威世 |
2019+ |
QR |
6700 |
原廠渠道 可含稅出貨 |
|||
Vishay(威世) |
2249+ |
62267 |
二十余載金牌老企 研究所優(yōu)秀合供單位 您的原廠窗口 |
||||
VISHAY |
24+ |
Tube |
87000 |
鄭重承諾只做原裝進口現(xiàn)貨 |
|||
VISHAY |
2016+ |
SOT23-3 |
6000 |
只做原裝,假一罰十,公司可開17%增值稅發(fā)票! |
|||
VISHAY |
21+ |
SOT-23 |
6880 |
只做原裝,質(zhì)量保證 |
|||
MCC(美微科) |
SOT-23-3 |
4898 |
全新原裝正品現(xiàn)貨可開票 |
SI2301規(guī)格書下載地址
SI2301參數(shù)引腳圖相關
- sw-262
- stm32f103
- stm32
- stk
- stc89c52rc
- stc12c5a60s2
- st70
- st18
- sst25vf040
- sr2m
- spwm
- spice模型
- spd
- sp3232
- soc
- smd
- sl11
- sk100
- sja1000
- sig
- SI2434
- SI2433
- SI2415
- SI2414
- SI2404
- SI2403
- SI2401
- SI2400
- SI2321
- SI2312
- SI2310
- SI2307
- SI2306
- SI2305B
- SI2305
- SI2304
- SI2303BDS-T1-E3-CUTTAPE
- SI2303BDS-T1-E3
- SI2303BDS
- SI2303ADS
- SI2303
- SI2302-TP
- SI2302DS
- SI2302DDS-T1-GE3
- SI2302CDS-T1-GE3-CUTTAPE
- SI2302CDS-T1-GE3
- SI2302CDS-T1-E3
- SI2302ADS-T1-E3
- SI2302A
- SI2302
- SI2301-TP
- SI2301DS
- SI2301CDS-T1-GE3-CUTTAPE
- SI2301CDS-T1-GE3
- SI2301CDS-T1-E3
- SI2301BDS-T1-GE3
- SI2301BDS-T1-E3-CUTTAPE
- SI2301BDS-T1-E3
- SI2301BDS
- SI2301A
- SI2300DS-T1-GE3
- SI2300
- SI220M450
- SI220M200
- SI2202
- SI2200M50
- SI2200M100
- SI2200
- SI2185
- SI2182-A55-GM
- SI21822-A50-GM
- SI2178
- SI2177
- SI2176
- SI2173-A40-GM
- SI2169-C55-GM
- SI2169-A30-GM
- SI2167-B20-GM
- SI2165
- SI2158
- SI2157
- SI2156
- SI2151
- SI2148-A20-GM
- SI2148
- SI2147
- SI2144
- SI2141
- SI2124
- SI2115
- Si2113
- Si2111
- SI1967DH-T1-GE3
- SI1967DH-T1-E3
- SI1965DH-T1-GE3
- SI1965DH-T1-E3
- SI1958DH-T1-E3
- SI1926DL-T1-E3
- SI1922EDH-T1-GE3
- SI1917EDH-T1-E3
SI2301數(shù)據(jù)表相關新聞
SI2301BDS-T1-E3
SI2301BDS-T1-E3 SOT23 P溝道 MOS場效應管 原裝現(xiàn)貨SI2301BDS
2022-1-4SI2301CDS-T1-GE3
SI2301CDS-T1-GE3
2020-7-17SI2300DS-T1-GE3
SI2300DS-T1-GE3
2020-7-17SI2301CDS-T1-GE3
SI2301CDS-T1-GE3
2020-7-14SI2300DS-T1-GE3
SI2300DS-T1-GE3
2020-6-19SI2300DS-T1-GE3
SI2300DS-T1-GE3
2020-5-11
DdatasheetPDF頁碼索引
- P1
- P2
- P3
- P4
- P5
- P6
- P7
- P8
- P9
- P10
- P11
- P12
- P13
- P14
- P15
- P16
- P17
- P18
- P19
- P20
- P21
- P22
- P23
- P24
- P25
- P26
- P27
- P28
- P29
- P30
- P31
- P32
- P33
- P34
- P35
- P36
- P37
- P38
- P39
- P40
- P41
- P42
- P43
- P44
- P45
- P46
- P47
- P48
- P49
- P50
- P51
- P52
- P53
- P54
- P55
- P56
- P57
- P58
- P59
- P60
- P61
- P62
- P63
- P64
- P65
- P66
- P67
- P68
- P69
- P70
- P71
- P72
- P73
- P74
- P75
- P76
- P77
- P78
- P79
- P80
- P81
- P82
- P83
- P84
- P85
- P86
- P87
- P88
- P89
- P90
- P91
- P92
- P93
- P94
- P95
- P96
- P97
- P98
- P99
- P100
- P101
- P102
- P103
- P104
