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位置:NAND512W3A2CZA6F > NAND512W3A2CZA6F詳情

NAND512W3A2CZA6F中文資料

廠家型號

NAND512W3A2CZA6F

文件大小

1270.65Kbytes

頁面數(shù)量

51

功能描述

512 Mbit, 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories

數(shù)據(jù)手冊

下載地址一下載地址二

簡稱

NUMONYX

生產(chǎn)廠商

numonyx

中文名稱

官網(wǎng)

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NAND512W3A2CZA6F數(shù)據(jù)手冊規(guī)格書PDF詳情

Description

The NAND Flash 528 Byte/ 264 Word Page is a family of non-volatile Flash memories that

uses the Single Level Cell (SLC) NAND cell technology. It is referred to as the Small Page

family. The NAND512R3A2C, NAND512R4A2C, NAND512W3A2C, and NAND512W4A2C

have a density of 512 Mbits and operate with either a 1.8V or 3V voltage supply. The size of

a Page is either 528 Bytes (512 + 16 spare) or 264 Words (256 + 8 spare) depending on

whether the device has a x8 or x16 bus width.

The address lines are multiplexed with the Data Input/Output signals on a multiplexed x8 or

x16 Input/Output bus. This interface reduces the pin count and makes it possible to migrate

to other densities without changing the footprint.

To extend the lifetime of NAND Flash devices it is strongly recommended to implement an

Error Correction Code (ECC). The use of ECC correction allows to achieve up to 100,000

program/erase cycles for each block. A Write Protect pin is available to give a hardware

protection against program and erase operations.

Features

● High density NAND Flash memories

– 512 Mbit memory array

– Cost effective solutions for mass storage applications

● NAND interface

– x 8 or x 16 bus width

– Multiplexed Address/ Data

● Supply voltage: 1.8 V, 3.0 V

● Page size

– x 8 device: (512 + 16 spare) bytes

– x 16 device: (256 + 8 spare) words

● Block size

– x 8 device: (16 K + 512 spare) bytes

– x 16 device: (8 K + 256 spare) words

● Page Read/Program

– Random access: 12 μs (3 V)/15 μs (1.8 V) (max)

– Sequential access: 30 ns (3 V)/50 ns (1.8 V) (min)

– Page Program time: 200 μs (typ)

● Copy Back Program mode

● Fast Block Erase: 2 ms (typ)

● Status Register

● Electronic signature

● Chip Enable ‘don’t care’

● Serial Number option

● Hardware Data Protection

– Program/Erase locked during Power transitions

● Data integrity

– 100,000 Program/Erase cycles (with ECC)

– 10 years Data Retention

● ECOPACK? packages

● Development tools

– Error Correction Code models

– Bad Blocks Management and Wear Leveling algorithms

– Hardware simulation models

更新時間:2025-7-3 14:31:00
供應(yīng)商 型號 品牌 批號 封裝 庫存 備注 價(jià)格
NUMONYX
1923+
TSOP48
5896
原裝進(jìn)口現(xiàn)貨庫存專業(yè)工廠研究所配單供貨
ST/意法
24+
QFP100
9600
原裝現(xiàn)貨,優(yōu)勢供應(yīng),支持實(shí)單!
ST(意法)
23+
NA
20094
正納10年以上分銷經(jīng)驗(yàn)原裝進(jìn)口正品做服務(wù)做口碑有支持
ST
21+
TSSOP48
10000
全新原裝 公司現(xiàn)貨 價(jià)格優(yōu)
專營ST
23+
TSOP48
3500
ST/意法
23+
TSOP48
50000
全新原裝正品現(xiàn)貨,支持訂貨
ST
23+
TSSOP48
50000
全新原裝正品現(xiàn)貨,支持訂貨
ST
21+
TSSOP48
10000
原裝現(xiàn)貨假一罰十
ST/意法
22+
TSSOP48
3800
只做原裝,價(jià)格優(yōu)惠,長期供貨。
ST
TSSOP48
22+
6000
十年配單,只做原裝

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numonyx

中文資料: 4589條

Numonyx是一家曾經(jīng)存在的存儲技術(shù)公司,于2008年由英特爾(Intel)和STMicroelectronics共同創(chuàng)立。Numonyx專注于非易失性存儲器(NVM)技術(shù)和閃存存儲器技術(shù),為客戶提供各種存儲解決方案和產(chǎn)品。 Numonyx的產(chǎn)品包括閃存存儲器、嵌入式存儲器、非易失性存儲器等,在計(jì)算機(jī)、消費(fèi)電子、通信、汽車等領(lǐng)域得到廣泛應(yīng)用。公司致力于技術(shù)創(chuàng)新與研發(fā),不斷提升產(chǎn)品性能、可靠性和創(chuàng)新性,以滿足客戶不斷增長的需求。 2010年,美國存儲技術(shù)公司Micron Technology收購了Numonyx,并將其整合為Micron的一部分。這一收購使Micron得以拓展其存儲技術(shù)領(lǐng)域的產(chǎn)