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NAND512W3A2CZA6E中文資料
NAND512W3A2CZA6E數(shù)據(jù)手冊規(guī)格書PDF詳情
Description
The NAND Flash 528 Byte/ 264 Word Page is a family of non-volatile Flash memories that
uses the Single Level Cell (SLC) NAND cell technology. It is referred to as the Small Page
family. The NAND512R3A2C, NAND512R4A2C, NAND512W3A2C, and NAND512W4A2C
have a density of 512 Mbits and operate with either a 1.8V or 3V voltage supply. The size of
a Page is either 528 Bytes (512 + 16 spare) or 264 Words (256 + 8 spare) depending on
whether the device has a x8 or x16 bus width.
The address lines are multiplexed with the Data Input/Output signals on a multiplexed x8 or
x16 Input/Output bus. This interface reduces the pin count and makes it possible to migrate
to other densities without changing the footprint.
To extend the lifetime of NAND Flash devices it is strongly recommended to implement an
Error Correction Code (ECC). The use of ECC correction allows to achieve up to 100,000
program/erase cycles for each block. A Write Protect pin is available to give a hardware
protection against program and erase operations.
Features
● High density NAND Flash memories
– 512 Mbit memory array
– Cost effective solutions for mass storage applications
● NAND interface
– x 8 or x 16 bus width
– Multiplexed Address/ Data
● Supply voltage: 1.8 V, 3.0 V
● Page size
– x 8 device: (512 + 16 spare) bytes
– x 16 device: (256 + 8 spare) words
● Block size
– x 8 device: (16 K + 512 spare) bytes
– x 16 device: (8 K + 256 spare) words
● Page Read/Program
– Random access: 12 μs (3 V)/15 μs (1.8 V) (max)
– Sequential access: 30 ns (3 V)/50 ns (1.8 V) (min)
– Page Program time: 200 μs (typ)
● Copy Back Program mode
● Fast Block Erase: 2 ms (typ)
● Status Register
● Electronic signature
● Chip Enable ‘don’t care’
● Serial Number option
● Hardware Data Protection
– Program/Erase locked during Power transitions
● Data integrity
– 100,000 Program/Erase cycles (with ECC)
– 10 years Data Retention
● ECOPACK? packages
● Development tools
– Error Correction Code models
– Bad Blocks Management and Wear Leveling algorithms
– Hardware simulation models
NAND512W3A2CZA6E產(chǎn)品屬性
- 類型
描述
- 型號
NAND512W3A2CZA6E
- 功能描述
IC FLASH 512MBIT 63VFBGA
- RoHS
是
- 類別
集成電路(IC) >> 存儲器
- 系列
-
- 產(chǎn)品變化通告
Product Discontinuation 26/Apr/2010
- 標準包裝
136
- 系列
- 格式 -
- 存儲器
RAM
- 存儲器類型
SRAM - 同步,DDR II
- 存儲容量
18M(1M x 18)
- 速度
200MHz
- 接口
并聯(lián)
- 電源電壓
1.7 V ~ 1.9 V
- 工作溫度
0°C ~ 70°C
- 封裝/外殼
165-TBGA
- 供應商設備封裝
165-CABGA(13x15)
- 包裝
托盤
- 其它名稱
71P71804S200BQ
供應商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
---|---|---|---|---|---|---|---|
Numonyx/STMi |
23+ |
63-VFBGA |
65480 |
||||
ST |
24+ |
BGA |
23000 |
免費送樣原盒原包現(xiàn)貨一手渠道聯(lián)系 |
|||
ST |
2016+ |
BGA |
6528 |
只做進口原裝現(xiàn)貨!假一賠十! |
|||
ST |
2020+ |
O-NEWB |
79 |
百分百原裝正品 真實公司現(xiàn)貨庫存 本公司只做原裝 可 |
|||
ST |
23+ |
VFBGA-55 |
5000 |
原裝正品,假一罰十 |
|||
ST |
6000 |
面議 |
19 |
DIP/SMD |
|||
ST |
24+ |
BGA |
20000 |
全新原廠原裝,進口正品現(xiàn)貨,正規(guī)渠道可含稅??! |
|||
Micron Technology Inc. |
21+ |
78-FBGA |
5280 |
進口原裝!長期供應!絕對優(yōu)勢價格(誠信經(jīng)營 |
|||
Micron Technology Inc. |
24+ |
63-VFBGA(9x11) |
56200 |
一級代理/放心采購 |
|||
ST |
08+PBF |
BGA |
1 |
普通 |
NAND512W3A2CZA6E 資料下載更多...
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Datasheet數(shù)據(jù)表PDF頁碼索引
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numonyx
Numonyx是一家曾經(jīng)存在的存儲技術公司,于2008年由英特爾(Intel)和STMicroelectronics共同創(chuàng)立。Numonyx專注于非易失性存儲器(NVM)技術和閃存存儲器技術,為客戶提供各種存儲解決方案和產(chǎn)品。 Numonyx的產(chǎn)品包括閃存存儲器、嵌入式存儲器、非易失性存儲器等,在計算機、消費電子、通信、汽車等領域得到廣泛應用。公司致力于技術創(chuàng)新與研發(fā),不斷提升產(chǎn)品性能、可靠性和創(chuàng)新性,以滿足客戶不斷增長的需求。 2010年,美國存儲技術公司Micron Technology收購了Numonyx,并將其整合為Micron的一部分。這一收購使Micron得以拓展其存儲技術領域的產(chǎn)