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NCE N-Channel Enhancement Mode Power MOSFET

Description The NCE6080 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features ● VDS =60V,ID =80A RDS(ON)

12-200V N-Channel Trench MOSFET

NCE N-Channel Enhancement Mode Power MOSFET

Description The NCE6080A uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features ● VDS =60V,ID =80A RDS(ON)=6.5mΩ (typical) @ VGS=10V RDS(ON)=7.5mΩ (typical) @ VGS=4.5V ● High density ce

NCE N-Channel Enhancement Mode Power MOSFET

Description The NCE6080AI uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features ● VDS =60V,ID =80A RDS(ON)=5.5mΩ (typical) @ VGS=10V RDS(ON)=6.5mΩ (typical) @ VGS=4.5V ● High density c

NCE N-Channel Enhancement Mode Power MOSFET

Description The NCE6080AK uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features ● VDS =60V,ID =80A RDS(ON)=6mΩ (typical) @ VGS=10V RDS(ON)=7mΩ (typical) @ VGS=4.5V ● High density cell

NCE N-Channel Enhancement Mode Power MOSFET

Description The NCE6080AT uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features ● VDS =60V,ID =80A RDS(ON)=5.5mΩ (typical) @ VGS=10V RDS(ON)=6.5mΩ (typical) @ VGS=4.5V ● High density c

NCE N-Channel Enhancement Mode Power MOSFET

Description The NCE6080D uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features ● VDS =60V,ID =80A RDS(ON)

NCE N-Channel Enhancement Mode Power MOSFET

Description The NCE6080ED uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features ● VDS =60V,ID =80A RDS(ON)

NCE N-Channel Enhancement Mode Power MOSFET

Description The NCE6080EK uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features ● VDS =60V,ID =80A RDS(ON)

12-200V N-Channel Trench MOSFET

12-200V N-Channel Trench MOSFET

N-Channel 60 V (D-S) 175 ?C MOSFET

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NCE N-Channel Enhancement Mode Power MOSFET

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IEC Appliance Inlet C14/C18, Screw-on mounting, Front side,Quick-connect

Description - Panel mount : Screw-on mounting , Front Side - Appliance Inlet , Pin temperature 70 °C , protection class I or II - Available in black and white

UV Power METERS

A Wide Lineup of 248 nm, 365 nm and 436 nm Type The C6080 series is a compact UV power meter specifically designed to measure the intensity of UV radiation emitted from the light guide output end of a UV spot light source. The C6080 uses a UV sensor that exhibits stable sensitivity even after

Heavy Duty Ring and Spade Terminals

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N-Channel Trench Power MOSFET

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N-Channel Trench Power MOSFET

文件：650.48 Kbytes Page：7 Pages