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型號(hào)	功能描述	生產(chǎn)廠家企業(yè)	LOGO
NCE6	CIT SWITCH 文件：252.92 Kbytes Page：3 Pages	CIT	CIT
NCE6003	NCE N-Channel Enhancement Mode Power MOSFET Description The NCE6003 uses advanced trench technology to provide excellent RDS(ON), low gate charge. This device is suitable for use as a Battery protection or in other switching application. General Features ● VDS =60V,ID =3A RDS(ON)	NCEPOWER 新潔能	NCEPOWER
NCE6003	N-Channel 60-V (D-S) MOSFET FEATURES ? Halogen-free According to IEC 61249-2-21 Available ? TrenchFET? Power MOSFET ? 100 Rg Tested ? 100 UIS Tested APPLICATIONS ? Battery Switch ? DC/DC Converter	VBSEMI 微碧半導(dǎo)體	VBSEMI
NCE6003M	NCE N-Channel Enhancement Mode Power MOSFET Description The NCE6003M uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other switching application. General Feature ● VDS =60V,ID =3.0A RDS(ON)	NCEPOWER 新潔能	NCEPOWER
NCE6003X	NCE N-Channel Enhancement Mode Power MOSFET Description The NCE6003X uses advanced trench technology to provide excellent RDS(ON), low gate charge. This device is suitable for use as a Battery protection or in other switching application. General Features ● VDS =60V,ID =3A RDS(ON)	NCEPOWER 新潔能	NCEPOWER
NCE6003XM	NCE N-Channel Enhancement Mode Power MOSFET Description The NCE6003XM uses advanced trench technology to provide excellent RDS(ON), low gate charge. This device is suitable for use as a Battery protection or in other switching application. General Features ● VDS =60V,ID =3A RDS(ON)	NCEPOWER 新潔能	NCEPOWER
NCE6003XY	NCE N-Channel Enhancement Mode Power MOSFET Description The NCE6003XY uses advanced trench technology to provide excellent RDS(ON), low gate charge. This device is suitable for use as a Battery protection or in other switching application. General Features ● VDS =60V,ID =3A RDS(ON)	NCEPOWER 新潔能	NCEPOWER
NCE6003Y	N-Channel 60-V (D-S) MOSFET FEATURES ? Halogen-free According to IEC 61249-2-21 Available ? TrenchFET? Power MOSFET ? 100 Rg Tested ? 100 UIS Tested APPLICATIONS ? Battery Switch ? DC/DC Converter	VBSEMI 微碧半導(dǎo)體	VBSEMI
NCE6004	NCE N-Channel Enhancement Mode Power MOSFET Description The NCE6004 uses advanced trench technology to provide excellent RDS(ON), low gate charge. This device is suitable for use as a Battery protection or in other switching application. General Features ● VDS =60V,ID =4A RDS(ON)	NCEPOWER 新潔能	NCEPOWER
NCE6005AN	NCE N-Channel Enhancement Mode Power MOSFET Description The NCE6005AN uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features ● VDS=60V,ID=5A RDS(ON)	NCEPOWER 新潔能	NCEPOWER
NCE6005AR	NCE N-Channel Enhancement Mode Power MOSFET Description The NCE6005AR uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features ● VDS=60V,ID=5A RDS(ON)	NCEPOWER 新潔能	NCEPOWER
NCE6005AS	NCE N-Channel Enhancement Mode Power MOSFET Description The NCE6005AS uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features ● VDS=60V,ID=5A RDS(ON)	NCEPOWER 新潔能	NCEPOWER
NCE6007S	NCE N-Channel Enhancement Mode Power MOSFET Description The NCE6007S uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features ● VDS =60V,ID =7A RDS(ON)	NCEPOWER 新潔能	NCEPOWER
NCE6009XS	NCE N-Channel Enhancement Mode Power MOSFET Description The NCE6009XS uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features ● VDS = 60V,ID =9A RDS(ON)	NCEPOWER 新潔能	NCEPOWER
NCE6010J	NCE N-Channel Enhancement Mode Power MOSFET Description The NCE6010J uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features ● VDS =60V,ID =10A RDS(ON)	NCEPOWER 新潔能	NCEPOWER
NCE6012AS	NCE N-Channel Enhancement Mode Power MOSFET Description The NCE6012AS uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features ● VDS = 60V,ID =12A RDS(ON)	NCEPOWER 新潔能	NCEPOWER
NCE6012CS	NCE N-Channel Enhancement Mode Power MOSFET Description The NCE6012CS uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features ● VDS = 60V,ID =12A RDS(ON)	NCEPOWER 新潔能	NCEPOWER
NCE6020A	NCE N-Channel Enhancement Mode Power MOSFET Description The NCE6020A uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features ● VDS =60V,ID =20A RDS(ON)	NCEPOWER 新潔能	NCEPOWER
NCE6020AI	NCE N-Channel Enhancement Mode Power MOSFET Description The NCE6020AI uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features ● VDS =60V,ID =20A RDS(ON)	NCEPOWER 新潔能	NCEPOWER
NCE6020AL	NCE N-Channel Enhancement Mode Power MOSFET Description The NCE6020AL uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features ● VDS =60V,ID =20A RDS(ON)	NCEPOWER 新潔能	NCEPOWER
NCE6020AQ	NCE N-Channel Enhancement Mode Power MOSFET Description he NCE6020AQ uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. Application ● Power switching application ● Hard switched and high frequency circuits ● Uninterruptible power supply G	NCEPOWER 新潔能	NCEPOWER
NCE6025Q	NCE N-Channel Enhancement Mode Power MOSFET Description The NCE6025Q uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features ● VDS =60V,ID =25A RDS(ON)	NCEPOWER 新潔能	NCEPOWER
NCE6030K	NCE N-Channel Enhancement Mode Power MOSFET Description The NCE6030K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features ● VDS =60V,ID =30A RDS(ON)	NCEPOWER 新潔能	NCEPOWER
NCE603583	NCE N&P-Channel complementary Power MOSFET Description The NCE603583 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features N channel ● VDS =60V,ID =40A RDS(ON)	NCEPOWER 新潔能	NCEPOWER
NCE6042AG	NCE N-Channel Enhancement Mode Power MOSFET Description The NCE6042AG uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features ● VDS =60V,ID =42A RDS(ON)	NCEPOWER 新潔能	NCEPOWER
NCE6045G	NCE N-Channel Enhancement Mode Power MOSFET Description The NCE6045G uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features ● VDS = 60V,ID =45A RDS(ON)	NCEPOWER 新潔能	NCEPOWER
NCE6045XAG	NCE N-Channel Enhancement Mode Power MOSFET Description The NCE6045XAG uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. Application ● Power switching application ● Load switch Description The NCE6045XAG uses advanced trench technology and	NCEPOWER 新潔能	NCEPOWER
NCE6045XG	NCE N-Channel Enhancement Mode Power MOSFET Description The NCE6045XG uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. Application ● DC/DC Converter ● Ideal for high-frequency switching and synchronous rectification General Features ● VDS	NCEPOWER 新潔能	NCEPOWER
NCE6050A	NCE N-Channel Enhancement Mode Power MOSFET Description The NCE6050A uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features ● VDS =60V,ID =50A RDS(ON)	NCEPOWER 新潔能	NCEPOWER
NCE6050IA	NCE N-Channel Enhancement Mode Power MOSFET Description The NCE6050IA uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features ● VDS =60V,ID =50A RDS(ON)	NCEPOWER 新潔能	NCEPOWER
NCE6058AK	NCE N-Channel Enhancement Mode Power MOSFET Description The NCE6058AK uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features ● VDS =60V,ID =58A RDS(ON)	NCEPOWER 新潔能	NCEPOWER
NCE6065AG	NCE N-Channel Enhancement Mode Power MOSFET Description The NCE6065AG uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features ● VDS =60V,ID =65A RDS(ON)	NCEPOWER 新潔能	NCEPOWER
NCE6065G	NCE N-Channel Enhancement Mode Power MOSFET Description The NCE6065G uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features ● VDS =60V,ID =65A RDS(ON)	NCEPOWER 新潔能	NCEPOWER
NCE6080	NCE N-Channel Enhancement Mode Power MOSFET Description The NCE6080 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features ● VDS =60V,ID =80A RDS(ON)	NCEPOWER 新潔能	NCEPOWER
NCE6080A	NCE N-Channel Enhancement Mode Power MOSFET Description The NCE6080A uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features ● VDS =60V,ID =80A RDS(ON)=6.5mΩ (typical) @ VGS=10V RDS(ON)=7.5mΩ (typical) @ VGS=4.5V ● High density ce	NCEPOWER 新潔能	NCEPOWER
NCE6080AI	NCE N-Channel Enhancement Mode Power MOSFET Description The NCE6080AI uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features ● VDS =60V,ID =80A RDS(ON)=5.5mΩ (typical) @ VGS=10V RDS(ON)=6.5mΩ (typical) @ VGS=4.5V ● High density c	NCEPOWER 新潔能	NCEPOWER
NCE6080AK	NCE N-Channel Enhancement Mode Power MOSFET Description The NCE6080AK uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features ● VDS =60V,ID =80A RDS(ON)=6mΩ (typical) @ VGS=10V RDS(ON)=7mΩ (typical) @ VGS=4.5V ● High density cell	NCEPOWER 新潔能	NCEPOWER
NCE6080AT	NCE N-Channel Enhancement Mode Power MOSFET Description The NCE6080AT uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features ● VDS =60V,ID =80A RDS(ON)=5.5mΩ (typical) @ VGS=10V RDS(ON)=6.5mΩ (typical) @ VGS=4.5V ● High density c	NCEPOWER 新潔能	NCEPOWER
NCE6080D	NCE N-Channel Enhancement Mode Power MOSFET Description The NCE6080D uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features ● VDS =60V,ID =80A RDS(ON)	NCEPOWER 新潔能	NCEPOWER
NCE6080ED	NCE N-Channel Enhancement Mode Power MOSFET Description The NCE6080ED uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features ● VDS =60V,ID =80A RDS(ON)	NCEPOWER 新潔能	NCEPOWER
NCE6080EK	NCE N-Channel Enhancement Mode Power MOSFET Description The NCE6080EK uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features ● VDS =60V,ID =80A RDS(ON)	NCEPOWER 新潔能	NCEPOWER
NCE609	N and P-Channel Enhancement Mode Power MOSFET Description The NCE609 uses advanced trench technology to provide excellent RDS(ON) and low gate charge . The complementary MOSFETs may be used to form a level shifted high side switch, and for a host of other applications. General Features ● N-Channel VDS =40V,ID =21A RDS(ON)	NCEPOWER 新潔能	NCEPOWER
NCE60H10D	NCE N-Channel Enhancement Mode Power MOSFET Description The NCE60H10D uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. This device is suitable for use in PWM, load switching and general purpose applications. General Features ● VDS =60V,ID =100A RDS(ON)	NCEPOWER 新潔能	NCEPOWER
NCE60H10K	NCE N-Channel Enhancement Mode Power MOSFET Description The NCE60H10K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. This device is suitable for use in PWM, load switching and general purpose applications. General Features ● VDS =60V,ID =100A RDS(ON)	NCEPOWER 新潔能	NCEPOWER
NCE60H15A	NCE N-Channel Enhancement Mode Power MOSFET Description The NCE60H15A uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features ● VDS =60V,ID =150A RDS(ON)	NCEPOWER 新潔能	NCEPOWER
NCE60H15A	isc N-Channel MOSFET Transistor FEATURES · Drain Current -ID= 150A@ TC=25℃ · Drain Source Voltage -VDSS= 60V(Min) · Static Drain-Source On-Resistance -RDS(on) = 3.1mΩ(Max)@VGS= 10V DESCRIPTION · Motor drive, DC-DC converter, power switch and solenoid drive.	ISC 無錫固電	ISC
NCE60H15AD	NCE N-Channel Enhancement Mode Power MOSFET Description The NCE60H15AD uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features ● VDS =60V,ID =150A RDS(ON)	NCEPOWER 新潔能	NCEPOWER
NCE60H15AT	NCE N-Channel Enhancement Mode Power MOSFET Description The NCE60H15AT uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features ● VDS =60V,ID =150A RDS(ON)	NCEPOWER 新潔能	NCEPOWER
NCE60H15T	NCE N-Channel Enhancement Mode Power MOSFET Description The NCE60H15T uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features ● VDS =60V,ID =150A RDS(ON)	NCEPOWER 新潔能	NCEPOWER
NCE60H18	NCE N-Channel Enhancement Mode Power MOSFET Description The NCE60H18 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. This device is suitable for use in PWM, load switching and general purpose applications. General Features ● VDS =60V,ID =180A RDS(ON)	NCEPOWER 新潔能	NCEPOWER
NCE60H21	NCE N-Channel Enhancement Mode Power MOSFET DESCRIPTION The NCE60H21 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. GENERAL FEATURES ● VDS =60V ,ID =210A RDS(ON)	NCEPOWER 新潔能	NCEPOWER
NCE60H28LL	NCE N-Channel Enhancement Mode Power MOSFET Description The NCE60H28LL uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. Application ● Power switching application ● Hard switched and high frequency circuits ● Uninterruptible power supply Gen	NCEPOWER 新潔能	NCEPOWER
NCE60H30T	NCE N-Channel Enhancement Mode Power MOSFET Description The NCE60H30T uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features ● VDS =60V,ID =300A RDS(ON)	NCEPOWER 新潔能	NCEPOWER
NCE60ND03N	NCE N-Channel Enhancement Mode Power MOSFET Description The NCE60ND03N uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other switching application. General Features ● VDS =60V,ID =3A RDS(ON)	NCEPOWER 新潔能	NCEPOWER
NCE60ND03S	NCE N-Channel Enhancement Mode Power MOSFET Description The NCE60ND03S uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other switching application. General Features ● VDS =60V,ID =3A RDS(ON)	NCEPOWER 新潔能	NCEPOWER
NCE60ND08S	NCE N-Channel Enhancement Mode Power MOSFET Description The NCE60ND08S uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features ● VDS = 60V,ID =8A RDS(ON)	NCEPOWER 新潔能	NCEPOWER
NCE60ND45AG	NCE N-Channel Enhancement Mode Power MOSFET Description The NCE60ND45AG uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. Application ● DC/DC Converter ● Ideal for high-frequency switching and synchronous rectification	NCEPOWER 新潔能	NCEPOWER
NCE60ND45XG	NCE N-Channel Enhancement Mode Power MOSFET Description The NCE60ND45XG uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. Application ● Power switching application ● Load switch	NCEPOWER 新潔能	NCEPOWER
NCE60NP09S	NCE 60V Complementary MOSFET Description The NCE60NP09S uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features N channel ● VDS =60V,ID =9A RDS(ON)	NCEPOWER 新潔能	NCEPOWER
NCE60NP1515K	NCE N&P-Channel complementary Power MOSFET Description The NCE60NP1515K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features N channel ● VDS =60V,ID =15A RDS(ON)	NCEPOWER 新潔能	NCEPOWER

NCE6產(chǎn)品屬性

類型
描述
型號(hào)
NCE6
制造商
CIT
制造商全稱
CIT Relay & Switch
功能描述
CIT SWITCH

NCE6供應(yīng)商更多...

更新時(shí)間：2025-9-17 16:28:00

IC供應(yīng)商	芯片型號(hào)	品牌	批號(hào)	封裝	庫(kù)存	備注	價(jià)格
深圳市祥瑞智科技有限公司	NCE65TF099D	NCE新潔能	25+	TO-263	10800	原廠原裝,價(jià)格優(yōu)勢(shì)	詢價(jià)
深圳市威雅利發(fā)展有限公司	NCE6990	NCE	19+	TO-220	2336	一級(jí)代理,專注軍工、汽車、醫(yī)療、工業(yè)、新能源、電力	詢價(jià)
深圳市潤(rùn)聯(lián)芯城科技有限公司	NCE6003	NCEPOWER	23+	SOT-23	50000	原裝正品支持實(shí)單	詢價(jià)
深圳市卓越微芯電子有限公司	NCE6075K	NCE	25+	TO-252	20000	原裝正品價(jià)格優(yōu)惠,志同道合共謀發(fā)展	詢價(jià)
深圳市美思瑞電子科技有限公司	NCE6012AS	NCE/新潔能	22+	SOP8	12245	現(xiàn)貨,原廠原裝假一罰十!	詢價(jià)
深圳市盈慧通電子有限公司	NCE6003XY	NCE/新潔能	2511	SOT-23-3L	360000	電子元器件采購(gòu)降本 30%!盈慧通原廠直采,砍掉中間差價(jià)	詢價(jià)
深圳市向鴻偉業(yè)電子有限公司	NCE6008AS	NCE/新潔能	2407+	SOP-8	30098	全新原裝!倉(cāng)庫(kù)現(xiàn)貨,大膽開價(jià)!	詢價(jià)
深圳市華斯頓科技有限公司	NCE6050K	NCEPOWER	25+23+	TO252	67328	絕對(duì)原裝正品現(xiàn)貨,全新深圳原裝進(jìn)口現(xiàn)貨	詢價(jià)
深圳市金華微盛電子有限公司	NCE6890	NCE	19+	TO-220	45000		詢價(jià)
富凱科技(深圳）有限公司	NCE60P12K	NCE/新潔能	24+	TO-252	9000	只做原裝，歡迎詢價(jià)，量大價(jià)優(yōu)	詢價(jià)

NCE6芯片相關(guān)品牌

NCE6規(guī)格書下載地址

NCE6參數(shù)引腳圖相關(guān)

p800
p600
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opa642
opa2604
op37
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op07
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oled發(fā)光材料
OLED材料
ogs
OEM
nvidia
ntc熱敏電阻
nrf24l01
nfc芯片
NFC
ne555定時(shí)器
ne555
NCE-SERIES
NCE9435
NCE9
NCE8290
NCE8205A
NCE8205
NCE8098
NCE8060
NCE8050
NCE8
NCE75H21T
NCE75H21
NCE7580D
NCE7580
NCE7578
NCE7560K
NCE7190
NCE7080
NCE7075
NCE7
NCE6990
NCE6890
NCE6802
NCE6602
NCE60-T01
NCE60-S05
NCE60-S04
NCE60-S02
NCE60-S01
NCE6090
NCE6075
NCE6060
NCE6058
NCE6050
NCE603S
NCE55H11
NCE5549
NCE5
NCE49DHHN-T931
NCE4963
NCE4953
NCE4688
NCE4614
NCE4606
NCE4525
NCE4435
NCE4080
NCE4
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NCE3417
NCE3416
NCE3415
NCE3407
NCE3404
NCE3402
NCE3401
NCE3400
NCE3134
NCE30H21
NCE3080K
NCE3055
NCE3050K
NCE3010S
NCE3
NCE25G120T
NCE2305
NCE2302
NCE2301
NCE216E10K
NCE216A10K
NCE211E10K

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DdatasheetPDF頁(yè)碼索引

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