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MJD117晶體管資料
MJD117別名：MJD117三極管、MJD117晶體管、MJD117晶體三極管
MJD117生產(chǎn)廠家：韓國(guó)三星公司
MJD117制作材料：Darl
MJD117性質(zhì)：低頻或音頻放大 （LF）
MJD117封裝形式：貼片封裝
MJD117極限工作電壓：
MJD117最大電流允許值：2A
MJD117最大工作頻率：<1MHZ或未知
MJD117引腳數(shù)：3
MJD117最大耗散功率：20W
MJD117放大倍數(shù)：
MJD117圖片代號(hào)：G-127
MJD117vtest：0
MJD117htest：999900
- MJD117atest：2
MJD117wtest：20
MJD117代換 MJD117用什么型號(hào)代替：
MJD117價(jià)格
參考價(jià)格：￥1.2879
型號(hào)：MJD117-1G 品牌：ONSemi 備注：這里有MJD117多少錢，2025年最近7天走勢(shì)，今日出價(jià)，今日競(jìng)價(jià)，MJD117批發(fā)/采購(gòu)報(bào)價(jià)，MJD117行情走勢(shì)銷售排行榜，MJD117報(bào)價(jià)。| 型號(hào) | 功能描述 | 生產(chǎn)廠家 企業(yè) | LOGO | 操作 |
|---|---|---|---|---|
MJD117 | Complementary Darlington Power Transistors Complementary Darlington Power Transistors DPAK For Surface Mount Applications Designed for general purpose power and switching such as output or driver stages in applications such as switching regulators, converters, and power amplifiers. Features ? Lead Formed for Surface Mount Applications | ONSEMI 安森美半導(dǎo)體 |   | |
MJD117 | D-PAK for Surface Mount Applications D-PAK for Surface Mount Applications ? High DC Current Gain ? Built-in a Damper Diode at E-C ? Lead Formed for Surface Mount Applications (No Suffix) ? Straight Lead (I-PAK, “ - I “ Suffix) ? Electrically Similar to Popular TIP117 | FairchildFairchild Semiconductor 仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司 | | |
MJD117 | Complementary Darlington Power Transistors DPAK For Surface Mount Applications Designed for general purpose power and switching such as output or driver stages in applications such as switching regulators, converters, and power amplifiers. Features ? Lead Formed for Surface Mount Applications in Plastic Sleeves (No Suffix) ? Straight Lead Version in Plastic Sleeves (“? | ONSEMI 安森美半導(dǎo)體 | | |
MJD117 | EPITAXIAL PLANAR PNP TRANSISTOR (MONOLITHIC CONSTRUCTION WITH BUILT IN BASE-EMITTER SHUNT RESISTORS INDUSTRIAL USE.) MONOLITHIC CONSTRUCTION WITH BUILT IN BASE-EMITTER SHUNT RESISTORS INDUSTRIAL USE. FEATURES ? High DC Current Gain. : hFE=1000(Min.), VCE=-4V, IC=-1A. ? Low Collector-Emitter Saturation Voltage. ? Straight Lead (IPAK, L Suffix) ? Complementary to MJD112/L. | KECKEC CORPORATION KEC株式會(huì)社 | | |
MJD117 | COMPLEMENTARY DARLINGTON PLASTIC POWER TRANSISTORS COMPLEMENTARY DARLINGTON PLASTIC POWER TRANSISTORS Designed for General Purpose Power and Switching Applications | CDIL | | |
MJD117 | isc Silicon PNP Darlington Power Transistor DESCRIPTION ? High DC current gain ? Built-in a damper diode at E-C ? Lead formed for surface mount applications(NO suffix) ? Straight lead(IPAK,“ －I” suffix) ? 100 avalanche tested ? Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ? Designe | ISC 無(wú)錫固電 | | |
MJD117 | Silicon PNP Power Transistor DESCRIPTION ·High DC current gain ·Lead formed for surface mount applications ·Built-in a damper diode at E-C ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for general purpose amplifier and low speed switching applications. | ISC 無(wú)錫固電 | | |
MJD117 | Silicon PNP Power Transistor DESCRIPTION ·High DC current gain ·Lead formed for surface mount applications ·Built-in a damper diode at E-C ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for general purpose amplifier and low speed switching applications. | ISC 無(wú)錫固電 | | |
MJD117 | TRANSISTOR (PNP) TRANSISTOR (PNP) FEATURES ● High DC Current Gain ● Low Collector-Emitter Saturation Voltage ● Complementary to MJD112 | JIANGSU 長(zhǎng)電科技 | | |
MJD117 | COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS Description The devices are manufactured in planar technology with “base island” layout and monolithic Darlington configuration. Features ■ Good hFE linearity ■ High fT frequency ■ Monolithic Darlington configuration with integrated antiparallel collector-emitter diode Application ■ Lin | STMICROELECTRONICS 意法半導(dǎo)體 | | |
MJD117 | Silicon PNP transistor in a TO-252 Plastic Package. Descriptions Silicon PNP transistor in a TO-252 Plastic Package. Features High DC current gain, built-in a damper diode at E-C,electrically similar to popular TIP117. Applications Medium power switching applications. | FOSHAN 藍(lán)箭電子 | | |
MJD117 | TRANSISTOR (PNP) 文件：391.1 Kbytes Page：3 Pages | FS | | |
MJD117 | 中等功率雙極型晶體管 | MCC | | |
MJD117 | 達(dá)林頓管 | JSCJ 長(zhǎng)晶科技 | | |
MJD117 | 2.0 A，100 V，PNP 達(dá)林頓雙極功率晶體管 | ONSEMI 安森美半導(dǎo)體 | | |
MJD117 | COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS 文件：250.7 Kbytes Page：6 Pages | STMICROELECTRONICS 意法半導(dǎo)體 | | |
MJD117 | Complementary power Darlington transistors 文件：388.17 Kbytes Page：10 Pages | STMICROELECTRONICS 意法半導(dǎo)體 | | |
MJD117 | 封裝/外殼：TO-252-3，DPak（2 引線 + 接片），SC-63 包裝：托盤 描述：TRANS PNP DARL 100V 2A DPAK 分立半導(dǎo)體產(chǎn)品 晶體管 - 雙極性晶體管（BJT）- 單個(gè) | ONSEMI 安森美半導(dǎo)體 | | |
MJD117 | isc Silicon PNP Darlington Power Transistor 文件：385.79 Kbytes Page：3 Pages | ISC 無(wú)錫固電 | | |
MJD117 | Complementary Darlington Power Transistors 文件：144.73 Kbytes Page：8 Pages | ONSEMI 安森美半導(dǎo)體 | | |
MJD117 | Complementary Darlington Power Transistors 文件：153.95 Kbytes Page：10 Pages | ONSEMI 安森美半導(dǎo)體 | | |
MJD117 | Complementary Darlington Power Transistors 文件：101.63 Kbytes Page：8 Pages | ONSEMI 安森美半導(dǎo)體 | | |
Complementary Darlington Power Transistors Complementary Darlington Power Transistors DPAK For Surface Mount Applications Designed for general purpose power and switching such as output or driver stages in applications such as switching regulators, converters, and power amplifiers. Features ? Lead Formed for Surface Mount Applications | ONSEMI 安森美半導(dǎo)體 | | ||
Complementary Darlington Power Transistors Designed for general purpose power and switching such as output or driver stages in applications such as switching regulators, converters, and power amplifiers. Features ? Lead Formed for Surface Mount Applications in Plastic Sleeves (No Suffix) ? Straight Lead Version in Plastic Sleeves ( | ONSEMI 安森美半導(dǎo)體 | | ||
Complementary Darlington Power Transistors DPAK For Surface Mount Applications Designed for general purpose power and switching such as output or driver stages in applications such as switching regulators, converters, and power amplifiers. Features ? Lead Formed for Surface Mount Applications in Plastic Sleeves (No Suffix) ? Straight Lead Version in Plastic Sleeves (“? | ONSEMI 安森美半導(dǎo)體 | | ||
Silicon PNP Power Transistor DESCRIPTION ·High DC current gain ·Lead formed for surface mount applications ·Built-in a damper diode at E-C ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for general purpose amplifier and low speed switching applications. | ISC 無(wú)錫固電 | | ||
Silicon PNP Power Transistor DESCRIPTION ·High DC current gain ·Lead formed for surface mount applications ·Built-in a damper diode at E-C ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for general purpose amplifier and low speed switching applications. | ISC 無(wú)錫固電 | | ||
Complementary Darlington Power Transistors DPAK For Surface Mount Applications Designed for general purpose power and switching such as output or driver stages in applications such as switching regulators, converters, and power amplifiers. Features ? Lead Formed for Surface Mount Applications in Plastic Sleeves (No Suffix) ? Straight Lead Version in Plastic Sleeves (“? | ONSEMI 安森美半導(dǎo)體 | | ||
Complementary Darlington Power Transistors Designed for general purpose power and switching such as output or driver stages in applications such as switching regulators, converters, and power amplifiers. Features ? Lead Formed for Surface Mount Applications in Plastic Sleeves (No Suffix) ? Straight Lead Version in Plastic Sleeves ( | ONSEMI 安森美半導(dǎo)體 | | ||
Complementary Darlington Power Transistors Complementary Darlington Power Transistors DPAK For Surface Mount Applications Designed for general purpose power and switching such as output or driver stages in applications such as switching regulators, converters, and power amplifiers. Features ? Lead Formed for Surface Mount Applications | ONSEMI 安森美半導(dǎo)體 | | ||
D-PAK for Surface Mount Applications D-PAK for Surface Mount Applications ? High DC Current Gain ? Built-in a Damper Diode at E-C ? Lead Formed for Surface Mount Applications (No Suffix) ? Straight Lead (I-PAK, “ - I “ Suffix) ? Electrically Similar to Popular TIP117 | FairchildFairchild Semiconductor 仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司 | | ||
EPITAXIAL PLANAR PNP TRANSISTOR (MONOLITHIC CONSTRUCTION WITH BUILT IN BASE-EMITTER SHUNT RESISTORS INDUSTRIAL USE.) MONOLITHIC CONSTRUCTION WITH BUILT IN BASE-EMITTER SHUNT RESISTORS INDUSTRIAL USE. FEATURES ? High DC Current Gain. : hFE=1000(Min.), VCE=-4V, IC=-1A. ? Low Collector-Emitter Saturation Voltage. ? Straight Lead (IPAK, L Suffix) ? Complementary to MJD112/L. | KECKEC CORPORATION KEC株式會(huì)社 | | ||
COMPLEMENTARY DARLINGTON PLASTIC POWER TRANSISTORS COMPLEMENTARY DARLINGTON PLASTIC POWER TRANSISTORS Designed for General Purpose Power and Switching Applications | CDIL | | ||
Complementary Darlington Power Transistors DPAK For Surface Mount Applications Designed for general purpose power and switching such as output or driver stages in applications such as switching regulators, converters, and power amplifiers. Features ? Lead Formed for Surface Mount Applications in Plastic Sleeves (No Suffix) ? Straight Lead Version in Plastic Sleeves (“? | ONSEMI 安森美半導(dǎo)體 | | ||
Complementary Darlington Power Transistors Designed for general purpose power and switching such as output or driver stages in applications such as switching regulators, converters, and power amplifiers. Features ? Lead Formed for Surface Mount Applications in Plastic Sleeves (No Suffix) ? Straight Lead Version in Plastic Sleeves ( | ONSEMI 安森美半導(dǎo)體 | | ||
Complementary Darlington Power Transistors Complementary Darlington Power Transistors DPAK For Surface Mount Applications Designed for general purpose power and switching such as output or driver stages in applications such as switching regulators, converters, and power amplifiers. Features ? Lead Formed for Surface Mount Applications | ONSEMI 安森美半導(dǎo)體 | | ||
Complementary Darlington Power Transistors Designed for general purpose power and switching such as output or driver stages in applications such as switching regulators, converters, and power amplifiers. Features ? Lead Formed for Surface Mount Applications in Plastic Sleeves (No Suffix) ? Straight Lead Version in Plastic Sleeves ( | ONSEMI 安森美半導(dǎo)體 | | ||
Complementary Darlington Power Transistors DPAK For Surface Mount Applications Designed for general purpose power and switching such as output or driver stages in applications such as switching regulators, converters, and power amplifiers. Features ? Lead Formed for Surface Mount Applications in Plastic Sleeves (No Suffix) ? Straight Lead Version in Plastic Sleeves (“? | ONSEMI 安森美半導(dǎo)體 | | ||
isc Silicon PNP Darlington Power Transistor 文件：385.79 Kbytes Page：3 Pages | ISC 無(wú)錫固電 | | ||
Complementary Darlington Power Transistors 文件：101.63 Kbytes Page：8 Pages | ONSEMI 安森美半導(dǎo)體 | | ||
Complementary Darlington Power Transistors 文件：101.63 Kbytes Page：8 Pages | ONSEMI 安森美半導(dǎo)體 | | ||
封裝/外殼：TO-251-3 短引線，IPak，TO-251AA 包裝：管件 描述：TRANS PNP DARL 100V 2A IPAK 分立半導(dǎo)體產(chǎn)品 晶體管 - 雙極性晶體管（BJT）- 單個(gè) | ONSEMI 安森美半導(dǎo)體 | | ||
Complementary Darlington Power Transistors 文件：101.63 Kbytes Page：8 Pages | ONSEMI 安森美半導(dǎo)體 | | ||
Complementary Darlington Power Transistors 文件：144.73 Kbytes Page：8 Pages | ONSEMI 安森美半導(dǎo)體 | | ||
Complementary Darlington Power Transistors 文件：101.63 Kbytes Page：8 Pages | ONSEMI 安森美半導(dǎo)體 | | ||
Complementary power Darlington transistors 文件：388.17 Kbytes Page：10 Pages | STMICROELECTRONICS 意法半導(dǎo)體 | | ||
Complementary Darlington Power Transistors 文件：101.63 Kbytes Page：8 Pages | ONSEMI 安森美半導(dǎo)體 | | ||
Complementary Darlington Power Transistors 文件：144.73 Kbytes Page：8 Pages | ONSEMI 安森美半導(dǎo)體 | | ||
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RENESAS MCU 文件：867.34 Kbytes Page：114 Pages | RENESAS 瑞薩 | | ||
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MJD117產(chǎn)品屬性
- 類型
描述
- 型號(hào)
MJD117
- 功能描述
達(dá)林頓晶體管 2A 100V Bipolar
- RoHS
否
- 制造商
Texas Instruments
- 配置
Octal
- 晶體管極性
NPN 集電極—發(fā)射極最大電壓
- VCEO
50 V 發(fā)射極 - 基極電壓
- VEBO
集電極—基極電壓
- 最大直流電集電極電流
0.5 A
- 最大工作溫度
+ 150 C
- 安裝風(fēng)格
SMD/SMT
- 封裝/箱體
SOIC-18
- 封裝
Reel
| IC供應(yīng)商 | 芯片型號(hào) | 品牌 | 批號(hào) | 封裝 | 庫(kù)存 | 備注 | 價(jià)格 |
|---|---|---|---|---|---|---|---|
Cj江蘇長(zhǎng)電 |
21+ |
TO252 |
12000 |
一級(jí)代理,專注軍工、汽車、醫(yī)療、工業(yè)、新能源、電力 |
|||
ON |
23+ |
NA |
23560 |
專業(yè)電子元器件供應(yīng)鏈正邁科技特價(jià)代理特價(jià)，原裝元器件供應(yīng)，支持開發(fā)樣品 |
|||
ST |
23+ |
TO-252 |
6000 |
原裝正品，支持實(shí)單 |
|||
ST/意法 |
25+ |
SOT-252 |
32000 |
ST/意法全新特價(jià)MJD117T4即刻詢購(gòu)立享優(yōu)惠#長(zhǎng)期有貨 |
|||
FAIRCHILD/仙童 |
2450+ |
TO-252 |
9850 |
只做原裝正品現(xiàn)貨或訂貨假一賠十! |
|||
ST/意法 |
21+ |
NA |
2500 |
只做原裝,假一罰十 |
|||
ON |
23+ |
SOT-252 |
2054 |
正規(guī)渠道,只有原裝! |
|||
ST/意法 |
24+ |
TO-252 |
504583 |
免費(fèi)送樣原盒原包現(xiàn)貨一手渠道聯(lián)系 |
|||
ON |
24+ |
SMD |
5500 |
長(zhǎng)期供應(yīng)原裝現(xiàn)貨實(shí)單可談 |
|||
CJ/長(zhǎng)電 |
21+ |
TO-252 |
30000 |
百域芯優(yōu)勢(shì) 實(shí)單必成 可開13點(diǎn)增值稅發(fā)票 |
MJD117規(guī)格書下載地址
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