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MC14011價(jià)格

參考價(jià)格:¥0.3384

型號(hào):MC14011BDG 品牌:ON 備注:這里有MC14011多少錢,2025年最近7天走勢(shì),今日出價(jià),今日競(jìng)價(jià),MC14011批發(fā)/采購(gòu)報(bào)價(jià),MC14011行情走勢(shì)銷售排行榜,MC14011報(bào)價(jià)。
型號(hào) 功能描述 生產(chǎn)廠家&企業(yè) LOGO 操作
MC14011

B-Suffix Series CMOS Gates

B-Suffix Series CMOS Gates The B Series logic gates are constructed with P and N channel enhancement mode devices in a single monolithic structure (Complementary MOS). Their primary use is where low power dissipation and/or high noise immunity is desired. Features ? Supply Voltage Range = 3.0 V

ONSEMI

安森美半導(dǎo)體

B-Suffix Series CMOS Gates

B-Suffix Series CMOS Gates The B Series logic gates are constructed with P and N channel enhancement mode devices in a single monolithic structure (Complementary MOS). Their primary use is where low power dissipation and/or high noise immunity is desired. Features ? Supply Voltage Range = 3.0 V

ONSEMI

安森美半導(dǎo)體

B-Suffix Series CMOS Gates

TheB Series logic gates are constructed with P and N channel enhancementmode devices in a single monolithic structure (Complementary MOS). Their primary use is where low power dissipation and/or high noise immunity is desired. 1. Supply Voltage Range = 3.0 Vdc to 18 Vdc 2. All Outputs Buffered

Motorola

摩托羅拉

B-Suffix Series CMOS Gates

TheB Series logic gates are constructed with P and N channel enhancementmode devices in a single monolithic structure (Complementary MOS). Their primary use is where low power dissipation and/or high noise immunity is desired. 1. Supply Voltage Range = 3.0 Vdc to 18 Vdc 2. All Outputs Buffered

Motorola

摩托羅拉

B-Suffix Series CMOS Gates

TheB Series logic gates are constructed with P and N channel enhancementmode devices in a single monolithic structure (Complementary MOS). Their primary use is where low power dissipation and/or high noise immunity is desired. 1. Supply Voltage Range = 3.0 Vdc to 18 Vdc 2. All Outputs Buffered

Motorola

摩托羅拉

B-Suffix Series CMOS Gates

B-Suffix Series CMOS Gates The B Series logic gates are constructed with P and N channel enhancement mode devices in a single monolithic structure (Complementary MOS). Their primary use is where low power dissipation and/or high noise immunity is desired. Features ? Supply Voltage Range = 3.0 V

ONSEMI

安森美半導(dǎo)體

B-Suffix Series CMOS Gates

B-Suffix Series CMOS Gates The B Series logic gates are constructed with P and N channel enhancement mode devices in a single monolithic structure (Complementary MOS). Their primary use is where low power dissipation and/or high noise immunity is desired. Features ? Supply Voltage Range = 3.0 V

ONSEMI

安森美半導(dǎo)體

B-Suffix Series CMOS Gates

TheB Series logic gates are constructed with P and N channel enhancementmode devices in a single monolithic structure (Complementary MOS). Their primary use is where low power dissipation and/or high noise immunity is desired. 1. Supply Voltage Range = 3.0 Vdc to 18 Vdc 2. All Outputs Buffered

Motorola

摩托羅拉

B-Suffix Series CMOS Gates

B-Suffix Series CMOS Gates The B Series logic gates are constructed with P and N channel enhancement mode devices in a single monolithic structure (Complementary MOS). Their primary use is where low power dissipation and/or high noise immunity is desired. Features ? Supply Voltage Range = 3.0 V

ONSEMI

安森美半導(dǎo)體

B-Suffix Series CMOS Gates

B-Suffix Series CMOS Gates The B Series logic gates are constructed with P and N channel enhancement mode devices in a single monolithic structure (Complementary MOS). Their primary use is where low power dissipation and/or high noise immunity is desired. Features ? Supply Voltage Range = 3.0 V

ONSEMI

安森美半導(dǎo)體

B-Suffix Series CMOS Gates

B-Suffix Series CMOS Gates The B Series logic gates are constructed with P and N channel enhancement mode devices in a single monolithic structure (Complementary MOS). Their primary use is where low power dissipation and/or high noise immunity is desired. Features ? Supply Voltage Range = 3.0 V

ONSEMI

安森美半導(dǎo)體

B-Suffix Series CMOS Gates

B-Suffix Series CMOS Gates The B Series logic gates are constructed with P and N channel enhancement mode devices in a single monolithic structure (Complementary MOS). Their primary use is where low power dissipation and/or high noise immunity is desired. Features ? Supply Voltage Range = 3.0 V

ONSEMI

安森美半導(dǎo)體

B-Suffix Series CMOS Gates

B-Suffix Series CMOS Gates The B Series logic gates are constructed with P and N channel enhancement mode devices in a single monolithic structure (Complementary MOS). Their primary use is where low power dissipation and/or high noise immunity is desired. Features ? Supply Voltage Range = 3.0 V

ONSEMI

安森美半導(dǎo)體

B-Suffix Series CMOS Gates

B-Suffix Series CMOS Gates The B Series logic gates are constructed with P and N channel enhancement mode devices in a single monolithic structure (Complementary MOS). Their primary use is where low power dissipation and/or high noise immunity is desired. Features ? Supply Voltage Range = 3.0 V

ONSEMI

安森美半導(dǎo)體

B-Suffix Series CMOS Gates

B-Suffix Series CMOS Gates The B Series logic gates are constructed with P and N channel enhancement mode devices in a single monolithic structure (Complementary MOS). Their primary use is where low power dissipation and/or high noise immunity is desired. Features ? Supply Voltage Range = 3.0 V

ONSEMI

安森美半導(dǎo)體

B-Suffix Series CMOS Gates

B-Suffix Series CMOS Gates The B Series logic gates are constructed with P and N channel enhancement mode devices in a single monolithic structure (Complementary MOS). Their primary use is where low power dissipation and/or high noise immunity is desired. Features ? Supply Voltage Range = 3.0 V

ONSEMI

安森美半導(dǎo)體

B-Suffix Series CMOS Gates

B-Suffix Series CMOS Gates The B Series logic gates are constructed with P and N channel enhancement mode devices in a single monolithic structure (Complementary MOS). Their primary use is where low power dissipation and/or high noise immunity is desired. Features ? Supply Voltage Range = 3.0 V

ONSEMI

安森美半導(dǎo)體

B-Suffix Series CMOS Gates

B-Suffix Series CMOS Gates The B Series logic gates are constructed with P and N channel enhancement mode devices in a single monolithic structure (Complementary MOS). Their primary use is where low power dissipation and/or high noise immunity is desired. Features ? Supply Voltage Range = 3.0 V

ONSEMI

安森美半導(dǎo)體

B-Suffix Series CMOS Gates

B-Suffix Series CMOS Gates The B Series logic gates are constructed with P and N channel enhancement mode devices in a single monolithic structure (Complementary MOS). Their primary use is where low power dissipation and/or high noise immunity is desired. Features ? Supply Voltage Range = 3.0 V

ONSEMI

安森美半導(dǎo)體

MC14009N

[UNITRA CEMI]

ETC1List of Unclassifed Manufacturers

etc未分類制造商未分類制造商

UB-Suffix Series CMOS Gates

The UB Series logic gates are constructed with P and N channel enhancement mode devices in a single monolithic structure (Complementary MOS). Their primary use is where low power dissipation and/or high noise immunity is desired. The UB set of CMOS gates are inverting non?buffered functions.

ONSEMI

安森美半導(dǎo)體

UB-Suffix Series CMOS Gates

The UB Series logic gates are constructed with P and N channel enhancement mode devices in a single monolithic structure (Complementary MOS). Their primary use is where low power dissipation and/or high noise immunity is desired. The UB set of CMOS gates are inverting non?buffered functions.

ONSEMI

安森美半導(dǎo)體

UB-Suffix Series CMOS Gates

The UB Series logic gates are constructed with P and N channel enhancement mode devices in a single monolithic structure (Complementary MOS). Their primary use is where low power dissipation and/or high noise immunity is desired. The UB set of CMOS gates are inverting non?buffered functions.

ONSEMI

安森美半導(dǎo)體

UB-Suffix Series CMOS Gates

The UB Series logic gates are constructed with P and N channel enhancement mode devices in a single monolithic structure (Complementary MOS). Their primary use is where low power dissipation and/or high noise immunity is desired. The UB set of CMOS gates are inverting non?buffered functions.

ONSEMI

安森美半導(dǎo)體

UB-Suffix Series CMOS Gates

The UB Series logic gates are constructed with P and N channel enhancement mode devices in a single monolithic structure (Complementary MOS). Their primary use is where low power dissipation and/or high noise immunity is desired. The UB set of CMOS gates are inverting non?buffered functions.

ONSEMI

安森美半導(dǎo)體

UB-Suffix Series CMOS Gates

The UB Series logic gates are constructed with P and N channel enhancement mode devices in a single monolithic structure (Complementary MOS). Their primary use is where low power dissipation and/or high noise immunity is desired. The UB set of CMOS gates are inverting non?buffered functions.

ONSEMI

安森美半導(dǎo)體

B-SUFFIX SERIES CMOS GATES

文件:134.49 Kbytes Page:12 Pages

ONSEMI

安森美半導(dǎo)體

B??uffix Series CMOS Gates

文件:195.05 Kbytes Page:14 Pages

ONSEMI

安森美半導(dǎo)體

B-SUFFIX SERIES CMOS GATES

文件:134.49 Kbytes Page:12 Pages

ONSEMI

安森美半導(dǎo)體

B-SUFFIX SERIES CMOS GATES

文件:134.49 Kbytes Page:12 Pages

ONSEMI

安森美半導(dǎo)體

B-SUFFIX SERIES CMOS GATES

文件:134.49 Kbytes Page:12 Pages

ONSEMI

安森美半導(dǎo)體

B-Suffix Series CMOS Gates

文件:135.47 Kbytes Page:11 Pages

ONSEMI

安森美半導(dǎo)體

封裝/外殼:14-SOIC(0.154",3.90mm 寬) 包裝:卷帶(TR)剪切帶(CT)Digi-Reel? 得捷定制卷帶 描述:IC GATE NAND 4CH 2-INP 14SOIC 集成電路(IC) 門和反相器

ONSEMI

安森美半導(dǎo)體

B-SUFFIX SERIES CMOS GATES

文件:134.49 Kbytes Page:12 Pages

ONSEMI

安森美半導(dǎo)體

封裝/外殼:14-SOIC(0.154",3.90mm 寬) 包裝:卷帶(TR)剪切帶(CT)Digi-Reel? 得捷定制卷帶 描述:IC GATE NAND 4CH 2-INP 14SOIC 集成電路(IC) 門和反相器

ONSEMI

安森美半導(dǎo)體

B-SUFFIX SERIES CMOS GATES

文件:134.49 Kbytes Page:12 Pages

ONSEMI

安森美半導(dǎo)體

B-Suffix Series CMOS Gates

文件:135.47 Kbytes Page:11 Pages

ONSEMI

安森美半導(dǎo)體

B-SUFFIX SERIES CMOS GATES

文件:134.49 Kbytes Page:12 Pages

ONSEMI

安森美半導(dǎo)體

B-Suffix Series CMOS Gates

文件:135.47 Kbytes Page:11 Pages

ONSEMI

安森美半導(dǎo)體

B-SUFFIX SERIES CMOS GATES

文件:134.49 Kbytes Page:12 Pages

ONSEMI

安森美半導(dǎo)體

B-SUFFIX SERIES CMOS GATES

文件:134.49 Kbytes Page:12 Pages

ONSEMI

安森美半導(dǎo)體

B-SUFFIX SERIES CMOS GATES

文件:134.49 Kbytes Page:12 Pages

ONSEMI

安森美半導(dǎo)體

B-Suffix Series CMOS Gates

文件:135.47 Kbytes Page:11 Pages

ONSEMI

安森美半導(dǎo)體

B-Suffix Series CMOS Gates

文件:135.47 Kbytes Page:11 Pages

ONSEMI

安森美半導(dǎo)體

UB??uffix Series CMOS Gates

文件:147.04 Kbytes Page:7 Pages

ONSEMI

安森美半導(dǎo)體

UB-Suffix Series CMOS Gates

文件:194.06 Kbytes Page:7 Pages

ONSEMI

安森美半導(dǎo)體

UB??uffix Series CMOS Gates

文件:147.04 Kbytes Page:7 Pages

ONSEMI

安森美半導(dǎo)體

UB??uffix Series CMOS Gates

文件:147.04 Kbytes Page:7 Pages

ONSEMI

安森美半導(dǎo)體

UB??uffix Series CMOS Gates

文件:147.04 Kbytes Page:7 Pages

ONSEMI

安森美半導(dǎo)體

UB-Suffix Series CMOS Gates

文件:144.39 Kbytes Page:6 Pages

ONSEMI

安森美半導(dǎo)體

UB-Suffix Series CMOS Gates

文件:194.06 Kbytes Page:7 Pages

ONSEMI

安森美半導(dǎo)體

UB??uffix Series CMOS Gates

文件:147.04 Kbytes Page:7 Pages

ONSEMI

安森美半導(dǎo)體

UB-Suffix Series CMOS Gates

文件:194.06 Kbytes Page:7 Pages

ONSEMI

安森美半導(dǎo)體

UB??uffix Series CMOS Gates

文件:147.04 Kbytes Page:7 Pages

ONSEMI

安森美半導(dǎo)體

UB-Suffix Series CMOS Gates

文件:144.39 Kbytes Page:6 Pages

ONSEMI

安森美半導(dǎo)體

Quadruple 2-input NAND Gate

FEATURES ● Quiescent Current = 0.5nA typ/pkg @5V ● Noise Immunity = 45 of VDD typ ● Capable of Driving One Low-power Schottky TTL Load Over the Rated Temperature Range ● Pin-for Pin Replacements for CD4011B and MC14011B Series

HitachiHitachi Semiconductor

日立日立公司

Nylon Cable Tie Variations

文件:147.06 Kbytes Page:1 Pages

HeycoHeyco.

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Nylon Cable Tie Variations

文件:147.06 Kbytes Page:1 Pages

HeycoHeyco.

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LilyPad LED Green (5pcs)

文件:437.12 Kbytes Page:1 Pages

SPARKFUN

Rose Assembly

文件:284.62 Kbytes Page:8 Pages

LEDIL

萊迪爾

替換型號(hào) 功能描述 生產(chǎn)廠家&企業(yè) LOGO 操作

Quad 2-input NAND gate

ROHM

羅姆

High Voltage CMOS Logic ICs

ROHM

羅姆

High Voltage CMOS Logic ICs

ROHM

羅姆

Quad 2-Input NOR(NAND) Buffered B Series Gate

NSCNational Semiconductor (TI)

美國(guó)國(guó)家半導(dǎo)體美國(guó)國(guó)家半導(dǎo)體公司

Quad 2-Input NOR,NAND Buffered B Series Gate

NSCNational Semiconductor (TI)

美國(guó)國(guó)家半導(dǎo)體美國(guó)國(guó)家半導(dǎo)體公司

CMOS NAND GATES

TI

德州儀器

Quad 2-Input NOR,NAND Buffered B Series Gate

NSCNational Semiconductor (TI)

美國(guó)國(guó)家半導(dǎo)體美國(guó)國(guó)家半導(dǎo)體公司

Quad 2-Input NOR,NAND Buffered B Series Gate

NSCNational Semiconductor (TI)

美國(guó)國(guó)家半導(dǎo)體美國(guó)國(guó)家半導(dǎo)體公司

Quad 2-Input NOR Buffered B Series Gate . Quad 2-Input NAND Buffered B Series Gate

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

CMOS NAND GATES

TI

德州儀器

The CD4011B, CD4012B, and CD4023B types are supplied in 14-lead hermetic dual-in-line ceramic packages

TI

德州儀器

The CD4011B, CD4012B, and CD4023B types are supplied in 14-lead hermetic dual-in-line ceramic packages

TI

德州儀器

CMOS NAND GATES

TI

德州儀器

NAND GATES

STMICROELECTRONICS

意法半導(dǎo)體

NAND GATES

STMICROELECTRONICS

意法半導(dǎo)體

Quadruple 2-input NAND Gate

HitachiHitachi Semiconductor

日立日立公司

Quadruple 2-input NAND gate

Philips

飛利浦

Quadruple 2-input NAND gate

Philips

飛利浦

COMPLEMENTARY METAL OXIDE SILICON

NTE

INPUT NAND GATE

RANDER & E International, Inc.

Quad 2 Input NAND Gate

TOSHIBA

東芝

C2MOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC

TOSHIBA

東芝

QUAD 2 INPUT NAND GATE

TOSHIBA

東芝

MC14011產(chǎn)品屬性

  • 類型

    描述

  • 型號(hào)

    MC14011

  • 制造商

    ONSEMI

  • 制造商全稱

    ON Semiconductor

  • 功能描述

    B-Suffix Series CMOS Gates

更新時(shí)間:2025-9-10 20:37:00
IC供應(yīng)商 芯片型號(hào) 品牌 批號(hào) 封裝 庫(kù)存 備注 價(jià)格
ON
25+
SOP
9500
百分百原裝正品 真實(shí)公司現(xiàn)貨庫(kù)存 本公司只做原裝 可
ONSEMI/安森美
25+
SOP-14
32000
ONSEMI/安森美全新特價(jià)MC14011BDR2G即刻詢購(gòu)立享優(yōu)惠#長(zhǎng)期有貨
MOT
2016+
SOP14
2500
只做原裝,假一罰十,公司可開17%增值稅發(fā)票!
ON
24+
DIP
6000
全新原裝深圳倉(cāng)庫(kù)現(xiàn)貨有單必成
XBLW芯伯樂
24+
SOP-14
50000
品牌代理,價(jià)格優(yōu)勢(shì),技術(shù)支持!!可直接對(duì)標(biāo)進(jìn)口品牌!
ON/安森美
25+
原廠封裝
10280
原廠授權(quán)一級(jí)代理,專注軍工、汽車、醫(yī)療、工業(yè)、新能源、電力!
ON
24+
SOP
6980
原裝現(xiàn)貨,可開13%稅票
ONSEMI/安森美
24+
SOP14
4101
全新原裝正品現(xiàn)貨可開票
ON/安森美
21+
NA
3905
只做原裝,假一罰十
ON
23+
SOP-14
113400
原裝現(xiàn)貨,價(jià)格優(yōu)勢(shì),誠(chéng)信經(jīng)營(yíng)

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