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MC14011價(jià)格
參考價(jià)格:¥0.3384
型號(hào):MC14011BDG 品牌:ON 備注:這里有MC14011多少錢,2025年最近7天走勢(shì),今日出價(jià),今日競(jìng)價(jià),MC14011批發(fā)/采購(gòu)報(bào)價(jià),MC14011行情走勢(shì)銷售排行榜,MC14011報(bào)價(jià)。型號(hào) | 功能描述 | 生產(chǎn)廠家&企業(yè) | LOGO | 操作 |
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MC14011 | B-Suffix Series CMOS Gates B-Suffix Series CMOS Gates The B Series logic gates are constructed with P and N channel enhancement mode devices in a single monolithic structure (Complementary MOS). Their primary use is where low power dissipation and/or high noise immunity is desired. Features ? Supply Voltage Range = 3.0 V | ONSEMI 安森美半導(dǎo)體 | ||
B-Suffix Series CMOS Gates B-Suffix Series CMOS Gates The B Series logic gates are constructed with P and N channel enhancement mode devices in a single monolithic structure (Complementary MOS). Their primary use is where low power dissipation and/or high noise immunity is desired. Features ? Supply Voltage Range = 3.0 V | ONSEMI 安森美半導(dǎo)體 | |||
B-Suffix Series CMOS Gates TheB Series logic gates are constructed with P and N channel enhancementmode devices in a single monolithic structure (Complementary MOS). Their primary use is where low power dissipation and/or high noise immunity is desired. 1. Supply Voltage Range = 3.0 Vdc to 18 Vdc 2. All Outputs Buffered | Motorola 摩托羅拉 | |||
B-Suffix Series CMOS Gates TheB Series logic gates are constructed with P and N channel enhancementmode devices in a single monolithic structure (Complementary MOS). Their primary use is where low power dissipation and/or high noise immunity is desired. 1. Supply Voltage Range = 3.0 Vdc to 18 Vdc 2. All Outputs Buffered | Motorola 摩托羅拉 | |||
B-Suffix Series CMOS Gates TheB Series logic gates are constructed with P and N channel enhancementmode devices in a single monolithic structure (Complementary MOS). Their primary use is where low power dissipation and/or high noise immunity is desired. 1. Supply Voltage Range = 3.0 Vdc to 18 Vdc 2. All Outputs Buffered | Motorola 摩托羅拉 | |||
B-Suffix Series CMOS Gates B-Suffix Series CMOS Gates The B Series logic gates are constructed with P and N channel enhancement mode devices in a single monolithic structure (Complementary MOS). Their primary use is where low power dissipation and/or high noise immunity is desired. Features ? Supply Voltage Range = 3.0 V | ONSEMI 安森美半導(dǎo)體 | |||
B-Suffix Series CMOS Gates B-Suffix Series CMOS Gates The B Series logic gates are constructed with P and N channel enhancement mode devices in a single monolithic structure (Complementary MOS). Their primary use is where low power dissipation and/or high noise immunity is desired. Features ? Supply Voltage Range = 3.0 V | ONSEMI 安森美半導(dǎo)體 | |||
B-Suffix Series CMOS Gates TheB Series logic gates are constructed with P and N channel enhancementmode devices in a single monolithic structure (Complementary MOS). Their primary use is where low power dissipation and/or high noise immunity is desired. 1. Supply Voltage Range = 3.0 Vdc to 18 Vdc 2. All Outputs Buffered | Motorola 摩托羅拉 | |||
B-Suffix Series CMOS Gates B-Suffix Series CMOS Gates The B Series logic gates are constructed with P and N channel enhancement mode devices in a single monolithic structure (Complementary MOS). Their primary use is where low power dissipation and/or high noise immunity is desired. Features ? Supply Voltage Range = 3.0 V | ONSEMI 安森美半導(dǎo)體 | |||
B-Suffix Series CMOS Gates B-Suffix Series CMOS Gates The B Series logic gates are constructed with P and N channel enhancement mode devices in a single monolithic structure (Complementary MOS). Their primary use is where low power dissipation and/or high noise immunity is desired. Features ? Supply Voltage Range = 3.0 V | ONSEMI 安森美半導(dǎo)體 | |||
B-Suffix Series CMOS Gates B-Suffix Series CMOS Gates The B Series logic gates are constructed with P and N channel enhancement mode devices in a single monolithic structure (Complementary MOS). Their primary use is where low power dissipation and/or high noise immunity is desired. Features ? Supply Voltage Range = 3.0 V | ONSEMI 安森美半導(dǎo)體 | |||
B-Suffix Series CMOS Gates B-Suffix Series CMOS Gates The B Series logic gates are constructed with P and N channel enhancement mode devices in a single monolithic structure (Complementary MOS). Their primary use is where low power dissipation and/or high noise immunity is desired. Features ? Supply Voltage Range = 3.0 V | ONSEMI 安森美半導(dǎo)體 | |||
B-Suffix Series CMOS Gates B-Suffix Series CMOS Gates The B Series logic gates are constructed with P and N channel enhancement mode devices in a single monolithic structure (Complementary MOS). Their primary use is where low power dissipation and/or high noise immunity is desired. Features ? Supply Voltage Range = 3.0 V | ONSEMI 安森美半導(dǎo)體 | |||
B-Suffix Series CMOS Gates B-Suffix Series CMOS Gates The B Series logic gates are constructed with P and N channel enhancement mode devices in a single monolithic structure (Complementary MOS). Their primary use is where low power dissipation and/or high noise immunity is desired. Features ? Supply Voltage Range = 3.0 V | ONSEMI 安森美半導(dǎo)體 | |||
B-Suffix Series CMOS Gates B-Suffix Series CMOS Gates The B Series logic gates are constructed with P and N channel enhancement mode devices in a single monolithic structure (Complementary MOS). Their primary use is where low power dissipation and/or high noise immunity is desired. Features ? Supply Voltage Range = 3.0 V | ONSEMI 安森美半導(dǎo)體 | |||
B-Suffix Series CMOS Gates B-Suffix Series CMOS Gates The B Series logic gates are constructed with P and N channel enhancement mode devices in a single monolithic structure (Complementary MOS). Their primary use is where low power dissipation and/or high noise immunity is desired. Features ? Supply Voltage Range = 3.0 V | ONSEMI 安森美半導(dǎo)體 | |||
B-Suffix Series CMOS Gates B-Suffix Series CMOS Gates The B Series logic gates are constructed with P and N channel enhancement mode devices in a single monolithic structure (Complementary MOS). Their primary use is where low power dissipation and/or high noise immunity is desired. Features ? Supply Voltage Range = 3.0 V | ONSEMI 安森美半導(dǎo)體 | |||
B-Suffix Series CMOS Gates B-Suffix Series CMOS Gates The B Series logic gates are constructed with P and N channel enhancement mode devices in a single monolithic structure (Complementary MOS). Their primary use is where low power dissipation and/or high noise immunity is desired. Features ? Supply Voltage Range = 3.0 V | ONSEMI 安森美半導(dǎo)體 | |||
B-Suffix Series CMOS Gates B-Suffix Series CMOS Gates The B Series logic gates are constructed with P and N channel enhancement mode devices in a single monolithic structure (Complementary MOS). Their primary use is where low power dissipation and/or high noise immunity is desired. Features ? Supply Voltage Range = 3.0 V | ONSEMI 安森美半導(dǎo)體 | |||
MC14009N [UNITRA CEMI] | ETC1List of Unclassifed Manufacturers etc未分類制造商未分類制造商 | |||
UB-Suffix Series CMOS Gates The UB Series logic gates are constructed with P and N channel enhancement mode devices in a single monolithic structure (Complementary MOS). Their primary use is where low power dissipation and/or high noise immunity is desired. The UB set of CMOS gates are inverting non?buffered functions. | ONSEMI 安森美半導(dǎo)體 | |||
UB-Suffix Series CMOS Gates The UB Series logic gates are constructed with P and N channel enhancement mode devices in a single monolithic structure (Complementary MOS). Their primary use is where low power dissipation and/or high noise immunity is desired. The UB set of CMOS gates are inverting non?buffered functions. | ONSEMI 安森美半導(dǎo)體 | |||
UB-Suffix Series CMOS Gates The UB Series logic gates are constructed with P and N channel enhancement mode devices in a single monolithic structure (Complementary MOS). Their primary use is where low power dissipation and/or high noise immunity is desired. The UB set of CMOS gates are inverting non?buffered functions. | ONSEMI 安森美半導(dǎo)體 | |||
UB-Suffix Series CMOS Gates The UB Series logic gates are constructed with P and N channel enhancement mode devices in a single monolithic structure (Complementary MOS). Their primary use is where low power dissipation and/or high noise immunity is desired. The UB set of CMOS gates are inverting non?buffered functions. | ONSEMI 安森美半導(dǎo)體 | |||
UB-Suffix Series CMOS Gates The UB Series logic gates are constructed with P and N channel enhancement mode devices in a single monolithic structure (Complementary MOS). Their primary use is where low power dissipation and/or high noise immunity is desired. The UB set of CMOS gates are inverting non?buffered functions. | ONSEMI 安森美半導(dǎo)體 | |||
UB-Suffix Series CMOS Gates The UB Series logic gates are constructed with P and N channel enhancement mode devices in a single monolithic structure (Complementary MOS). Their primary use is where low power dissipation and/or high noise immunity is desired. The UB set of CMOS gates are inverting non?buffered functions. | ONSEMI 安森美半導(dǎo)體 | |||
B-SUFFIX SERIES CMOS GATES 文件:134.49 Kbytes Page:12 Pages | ONSEMI 安森美半導(dǎo)體 | |||
B??uffix Series CMOS Gates 文件:195.05 Kbytes Page:14 Pages | ONSEMI 安森美半導(dǎo)體 | |||
B-SUFFIX SERIES CMOS GATES 文件:134.49 Kbytes Page:12 Pages | ONSEMI 安森美半導(dǎo)體 | |||
B-SUFFIX SERIES CMOS GATES 文件:134.49 Kbytes Page:12 Pages | ONSEMI 安森美半導(dǎo)體 | |||
B-SUFFIX SERIES CMOS GATES 文件:134.49 Kbytes Page:12 Pages | ONSEMI 安森美半導(dǎo)體 | |||
B-Suffix Series CMOS Gates 文件:135.47 Kbytes Page:11 Pages | ONSEMI 安森美半導(dǎo)體 | |||
封裝/外殼:14-SOIC(0.154",3.90mm 寬) 包裝:卷帶(TR)剪切帶(CT)Digi-Reel? 得捷定制卷帶 描述:IC GATE NAND 4CH 2-INP 14SOIC 集成電路(IC) 門和反相器 | ONSEMI 安森美半導(dǎo)體 | |||
B-SUFFIX SERIES CMOS GATES 文件:134.49 Kbytes Page:12 Pages | ONSEMI 安森美半導(dǎo)體 | |||
封裝/外殼:14-SOIC(0.154",3.90mm 寬) 包裝:卷帶(TR)剪切帶(CT)Digi-Reel? 得捷定制卷帶 描述:IC GATE NAND 4CH 2-INP 14SOIC 集成電路(IC) 門和反相器 | ONSEMI 安森美半導(dǎo)體 | |||
B-SUFFIX SERIES CMOS GATES 文件:134.49 Kbytes Page:12 Pages | ONSEMI 安森美半導(dǎo)體 | |||
B-Suffix Series CMOS Gates 文件:135.47 Kbytes Page:11 Pages | ONSEMI 安森美半導(dǎo)體 | |||
B-SUFFIX SERIES CMOS GATES 文件:134.49 Kbytes Page:12 Pages | ONSEMI 安森美半導(dǎo)體 | |||
B-Suffix Series CMOS Gates 文件:135.47 Kbytes Page:11 Pages | ONSEMI 安森美半導(dǎo)體 | |||
B-SUFFIX SERIES CMOS GATES 文件:134.49 Kbytes Page:12 Pages | ONSEMI 安森美半導(dǎo)體 | |||
B-SUFFIX SERIES CMOS GATES 文件:134.49 Kbytes Page:12 Pages | ONSEMI 安森美半導(dǎo)體 | |||
B-SUFFIX SERIES CMOS GATES 文件:134.49 Kbytes Page:12 Pages | ONSEMI 安森美半導(dǎo)體 | |||
B-Suffix Series CMOS Gates 文件:135.47 Kbytes Page:11 Pages | ONSEMI 安森美半導(dǎo)體 | |||
B-Suffix Series CMOS Gates 文件:135.47 Kbytes Page:11 Pages | ONSEMI 安森美半導(dǎo)體 | |||
UB??uffix Series CMOS Gates 文件:147.04 Kbytes Page:7 Pages | ONSEMI 安森美半導(dǎo)體 | |||
UB-Suffix Series CMOS Gates 文件:194.06 Kbytes Page:7 Pages | ONSEMI 安森美半導(dǎo)體 | |||
UB??uffix Series CMOS Gates 文件:147.04 Kbytes Page:7 Pages | ONSEMI 安森美半導(dǎo)體 | |||
UB??uffix Series CMOS Gates 文件:147.04 Kbytes Page:7 Pages | ONSEMI 安森美半導(dǎo)體 | |||
UB??uffix Series CMOS Gates 文件:147.04 Kbytes Page:7 Pages | ONSEMI 安森美半導(dǎo)體 | |||
UB-Suffix Series CMOS Gates 文件:144.39 Kbytes Page:6 Pages | ONSEMI 安森美半導(dǎo)體 | |||
UB-Suffix Series CMOS Gates 文件:194.06 Kbytes Page:7 Pages | ONSEMI 安森美半導(dǎo)體 | |||
UB??uffix Series CMOS Gates 文件:147.04 Kbytes Page:7 Pages | ONSEMI 安森美半導(dǎo)體 | |||
UB-Suffix Series CMOS Gates 文件:194.06 Kbytes Page:7 Pages | ONSEMI 安森美半導(dǎo)體 | |||
UB??uffix Series CMOS Gates 文件:147.04 Kbytes Page:7 Pages | ONSEMI 安森美半導(dǎo)體 | |||
UB-Suffix Series CMOS Gates 文件:144.39 Kbytes Page:6 Pages | ONSEMI 安森美半導(dǎo)體 | |||
Quadruple 2-input NAND Gate FEATURES ● Quiescent Current = 0.5nA typ/pkg @5V ● Noise Immunity = 45 of VDD typ ● Capable of Driving One Low-power Schottky TTL Load Over the Rated Temperature Range ● Pin-for Pin Replacements for CD4011B and MC14011B Series | HitachiHitachi Semiconductor 日立日立公司 | |||
Nylon Cable Tie Variations 文件:147.06 Kbytes Page:1 Pages | HeycoHeyco. ???/span> | |||
Nylon Cable Tie Variations 文件:147.06 Kbytes Page:1 Pages | HeycoHeyco. ???/span> | |||
LilyPad LED Green (5pcs) 文件:437.12 Kbytes Page:1 Pages | SPARKFUN | |||
Rose Assembly 文件:284.62 Kbytes Page:8 Pages | LEDIL 萊迪爾 |
替換型號(hào) | 功能描述 | 生產(chǎn)廠家&企業(yè) | LOGO | 操作 |
---|---|---|---|---|
Quad 2-input NAND gate | ROHM 羅姆 | ROHM | ||
High Voltage CMOS Logic ICs | ROHM 羅姆 | ROHM | ||
High Voltage CMOS Logic ICs | ROHM 羅姆 | ROHM | ||
Quad 2-Input NOR(NAND) Buffered B Series Gate | NSCNational Semiconductor (TI) 美國(guó)國(guó)家半導(dǎo)體美國(guó)國(guó)家半導(dǎo)體公司 | NSC | ||
Quad 2-Input NOR,NAND Buffered B Series Gate | NSCNational Semiconductor (TI) 美國(guó)國(guó)家半導(dǎo)體美國(guó)國(guó)家半導(dǎo)體公司 | NSC | ||
CMOS NAND GATES | TI 德州儀器 | TI | ||
Quad 2-Input NOR,NAND Buffered B Series Gate | NSCNational Semiconductor (TI) 美國(guó)國(guó)家半導(dǎo)體美國(guó)國(guó)家半導(dǎo)體公司 | NSC | ||
Quad 2-Input NOR,NAND Buffered B Series Gate | NSCNational Semiconductor (TI) 美國(guó)國(guó)家半導(dǎo)體美國(guó)國(guó)家半導(dǎo)體公司 | NSC | ||
Quad 2-Input NOR Buffered B Series Gate . Quad 2-Input NAND Buffered B Series Gate | FairchildFairchild Semiconductor 仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司 | Fairchild | ||
CMOS NAND GATES | TI 德州儀器 | TI | ||
The CD4011B, CD4012B, and CD4023B types are supplied in 14-lead hermetic dual-in-line ceramic packages | TI 德州儀器 | TI | ||
The CD4011B, CD4012B, and CD4023B types are supplied in 14-lead hermetic dual-in-line ceramic packages | TI 德州儀器 | TI | ||
CMOS NAND GATES | TI 德州儀器 | TI | ||
NAND GATES | STMICROELECTRONICS 意法半導(dǎo)體 | STMICROELECTRONICS | ||
NAND GATES | STMICROELECTRONICS 意法半導(dǎo)體 | STMICROELECTRONICS | ||
Quadruple 2-input NAND Gate | HitachiHitachi Semiconductor 日立日立公司 | Hitachi | ||
Quadruple 2-input NAND gate | Philips 飛利浦 | Philips | ||
Quadruple 2-input NAND gate | Philips 飛利浦 | Philips | ||
COMPLEMENTARY METAL OXIDE SILICON | NTE | NTE | ||
INPUT NAND GATE | RANDER & E International, Inc. | RANDE | ||
Quad 2 Input NAND Gate | TOSHIBA 東芝 | TOSHIBA | ||
C2MOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC | TOSHIBA 東芝 | TOSHIBA | ||
QUAD 2 INPUT NAND GATE | TOSHIBA 東芝 | TOSHIBA |
MC14011產(chǎn)品屬性
- 類型
描述
- 型號(hào)
MC14011
- 制造商
ONSEMI
- 制造商全稱
ON Semiconductor
- 功能描述
B-Suffix Series CMOS Gates
IC供應(yīng)商 | 芯片型號(hào) | 品牌 | 批號(hào) | 封裝 | 庫(kù)存 | 備注 | 價(jià)格 |
---|---|---|---|---|---|---|---|
ON |
25+ |
SOP |
9500 |
百分百原裝正品 真實(shí)公司現(xiàn)貨庫(kù)存 本公司只做原裝 可 |
|||
ONSEMI/安森美 |
25+ |
SOP-14 |
32000 |
ONSEMI/安森美全新特價(jià)MC14011BDR2G即刻詢購(gòu)立享優(yōu)惠#長(zhǎng)期有貨 |
|||
MOT |
2016+ |
SOP14 |
2500 |
只做原裝,假一罰十,公司可開17%增值稅發(fā)票! |
|||
ON |
24+ |
DIP |
6000 |
全新原裝深圳倉(cāng)庫(kù)現(xiàn)貨有單必成 |
|||
XBLW芯伯樂 |
24+ |
SOP-14 |
50000 |
品牌代理,價(jià)格優(yōu)勢(shì),技術(shù)支持!!可直接對(duì)標(biāo)進(jìn)口品牌! |
|||
ON/安森美 |
25+ |
原廠封裝 |
10280 |
原廠授權(quán)一級(jí)代理,專注軍工、汽車、醫(yī)療、工業(yè)、新能源、電力! |
|||
ON |
24+ |
SOP |
6980 |
原裝現(xiàn)貨,可開13%稅票 |
|||
ONSEMI/安森美 |
24+ |
SOP14 |
4101 |
全新原裝正品現(xiàn)貨可開票 |
|||
ON/安森美 |
21+ |
NA |
3905 |
只做原裝,假一罰十 |
|||
ON |
23+ |
SOP-14 |
113400 |
原裝現(xiàn)貨,價(jià)格優(yōu)勢(shì),誠(chéng)信經(jīng)營(yíng) |
MC14011芯片相關(guān)品牌
MC14011規(guī)格書下載地址
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精密的帶鈥揼美聯(lián)社參考電壓設(shè)計(jì)的關(guān)鍵儀器儀表和D / A轉(zhuǎn)換器應(yīng)用。本機(jī)的設(shè)計(jì)工作與D/ A轉(zhuǎn)換器,精度高達(dá)12位,或作為功率參考電源應(yīng)用。 輸出電壓:2.5伏25毫伏 輸入電壓范圍:4.5 V至40 V 靜態(tài)電流:1.2 mA典型 輸出電流:10毫安 溫度系數(shù):10 ppm的/擄C典型 保證溫度漂移規(guī)范 相當(dāng)于AD580 標(biāo)準(zhǔn)8鈥揚(yáng)在DIP和SOIC封裝在8鈥揚(yáng) 典型應(yīng)用 參考電壓為8至12位D/ A轉(zhuǎn)換器
2013-3-17MC1378P-ACF-II評(píng)估板操作手冊(cè)
MC1378是一款雙極復(fù)合視頻疊加編碼器和微機(jī)同步。 MC1378包含完整的編碼器功能的MC1377,即正交顏色的調(diào)制器,RGB矩陣,消隱電平鉗位,再加上一個(gè)完整的補(bǔ)充同步器鎖定一個(gè)基于微機(jī)的任何遠(yuǎn)程視頻源的視頻源。 MC1378可以被用來作為本地系統(tǒng)的時(shí)間和編碼源,但它是最有價(jià)值的使用時(shí),鎖定到一個(gè)遠(yuǎn)程微機(jī)源起源于視頻信號(hào)。 •包含所有需要的參考振蕩器 •可以工作在PAL或NTSC模式,625或525線 •寬帶,完全保真的色彩編碼 •本地或遠(yuǎn)程操作模式 •最小
2013-1-16
DdatasheetPDF頁(yè)碼索引
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