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IXXH30N60B3價(jià)格

參考價(jià)格：￥22.9937

型號(hào)：IXXH30N60B3D1 品牌：Ixys 備注：這里有IXXH30N60B3多少錢，2025年最近7天走勢(shì)，今日出價(jià)，今日競(jìng)價(jià)，IXXH30N60B3批發(fā)/采購報(bào)價(jià)，IXXH30N60B3行情走勢(shì)銷售排行榜，IXXH30N60B3報(bào)價(jià)。
型號(hào) 功能描述 生產(chǎn)廠家&企業(yè) LOGO 操作
IXXH30N60B3

XPTTM 600V IGBT

文件：223.88 Kbytes Page：6 Pages

IXYS

艾賽斯

IXXH30N60B3

封裝/外殼：TO-247-3 包裝：卷帶（TR） 描述：IGBT 600V TO247 分立半導(dǎo)體產(chǎn)品 晶體管 - UGBT、MOSFET - 單

IXYS

艾賽斯

XPTTM 600V IGBT GenX3TM w/ Diode

Extreme Light Punch Through IGBT for 5-30 kHz Switching Features ● Optimized for 5-30kHz Switching ● Square RBSOA ● Anti-Parallel Ultra Fast Diode ● Avalanche Capability ● Short Circuit Capability ● International Standard Package Advantages ● High Power Density ● 175°C Rated ● Extremely

IXYS

艾賽斯

封裝/外殼：TO-247-3 包裝：管件 描述：IGBT 600V 60A 270W TO247 分立半導(dǎo)體產(chǎn)品 晶體管 - UGBT、MOSFET - 單

IXYS

艾賽斯

60A, 600V, UFS Series N-Channel IGBT

The HGTG30N60B3 is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderatel

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

60A, 600V, UFS Series N-Channel IGBT

The HGTG30N60B3 is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderatel

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

60A, 600V, UFS Series N-Channel IGBT

The HGTG30N60B3 is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderatel

Intersil

60A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode

文件：228.05 Kbytes Page：8 Pages

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

60A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode

文件：228.05 Kbytes Page：8 Pages

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

IXXH30N60B3產(chǎn)品屬性

  • 類型

    描述

  • 型號(hào)

    IXXH30N60B3

  • 功能描述

    IGBT 晶體管 XPT 600V IGBT GenX3 XPT IGBT

  • RoHS

    否

  • 制造商

    Fairchild Semiconductor

  • 配置

    集電極—發(fā)射極最大電壓

  • VCEO

    650 V

  • 集電極—射極飽和電壓

    2.3 V

  • 柵極/發(fā)射極最大電壓

    20 V 在25

  • C的連續(xù)集電極電流

    150 A

  • 柵極—射極漏泄電流

    400 nA

  • 功率耗散

    187 W

  • 封裝/箱體

    TO-247

  • 封裝

    Tube

更新時(shí)間：2025-8-19 15:21:00
IC供應(yīng)商 芯片型號(hào) 品牌 批號(hào) 封裝 庫存 備注 價(jià)格
IXYS/艾賽斯
22+
TO247
12245
現(xiàn)貨,原廠原裝假一罰十!
IXYS/艾賽斯
24+
TO247
4500
原裝正品現(xiàn)貨,假一罰十
原裝IXYS
19+
TO-247
20000
原裝現(xiàn)貨假一罰十
Littelfuse/IXYS
24+
TO-247
928
原廠訂貨渠道,支持BOM配單一站式服務(wù)
IXYS/艾賽斯
24+
NA/
5250
原裝現(xiàn)貨,當(dāng)天可交貨,原型號(hào)開票
IXYS/艾賽斯
1942+
TO-247
9852
只做原裝正品現(xiàn)貨或訂貨!假一賠十!
IXYS/艾賽斯
24+
TO-247
1000
只做原廠渠道 可追溯貨源
IXYS
2447
TO-247
105000
30個(gè)/管一級(jí)代理專營(yíng)品牌!原裝正品,優(yōu)勢(shì)現(xiàn)貨,長(zhǎng)期
IXYS
原裝
13605
一級(jí)代理 原裝正品假一罰十價(jià)格優(yōu)勢(shì)長(zhǎng)期供貨
IXYS/艾賽斯
24+
TO247
39197
鄭重承諾只做原裝進(jìn)口現(xiàn)貨

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IXXH30N60B3規(guī)格書下載地址

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