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HGTG30N60B3價(jià)格

參考價(jià)格：￥13.5954

型號(hào)：HGTG30N60B3 品牌：FAIRCHILD 備注：這里有HGTG30N60B3多少錢，2025年最近7天走勢(shì)，今日出價(jià)，今日競(jìng)價(jià)，HGTG30N60B3批發(fā)/采購(gòu)報(bào)價(jià)，HGTG30N60B3行情走勢(shì)銷售排行榜，HGTG30N60B3報(bào)價(jià)。
型號(hào) 功能描述 生產(chǎn)廠家&企業(yè) LOGO 操作
HGTG30N60B3

60A, 600V, UFS Series N-Channel IGBT

The HGTG30N60B3 is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderatel

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

HGTG30N60B3

60A, 600V, UFS Series N-Channel IGBT

The HGTG30N60B3 is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderatel

Intersil

HGTG30N60B3

封裝/外殼：TO-247-3 包裝：管件 描述：IGBT 600V 60A 208W TO247 分立半導(dǎo)體產(chǎn)品 晶體管 - UGBT、MOSFET - 單

ONSEMI

安森美半導(dǎo)體

60A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode

The HGTG30N60B3D is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderate

Intersil

60A, 600V, UFS Series N-Channel IGBT

60A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode The HGTG30N60B3D is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low on-state conduction loss of a bip

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

60A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode

文件：228.05 Kbytes Page：8 Pages

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

封裝/外殼：TO-247-3 包裝：管件 描述：IGBT 600V 60A TO247-3 分立半導(dǎo)體產(chǎn)品 晶體管 - UGBT、MOSFET - 單

ONSEMI

安森美半導(dǎo)體

60A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode

文件：228.05 Kbytes Page：8 Pages

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

60A, 600V, UFS Series N-Channel IGBT

The HGTG30N60B3 is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderatel

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

60A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode

文件：228.05 Kbytes Page：8 Pages

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

HGTG30N60B3產(chǎn)品屬性

  • 類型

    描述

  • 型號(hào)

    HGTG30N60B3

  • 功能描述

    IGBT 晶體管 600V N-Channel IGBT UFS Series

  • RoHS

    否

  • 制造商

    Fairchild Semiconductor

  • 配置

    集電極—發(fā)射極最大電壓

  • VCEO

    650 V

  • 集電極—射極飽和電壓

    2.3 V

  • 柵極/發(fā)射極最大電壓

    20 V 在25

  • C的連續(xù)集電極電流

    150 A

  • 柵極—射極漏泄電流

    400 nA

  • 功率耗散

    187 W

  • 封裝/箱體

    TO-247

  • 封裝

    Tube

更新時(shí)間：2025-9-6 23:01:00
IC供應(yīng)商 芯片型號(hào) 品牌 批號(hào) 封裝 庫(kù)存 備注 價(jià)格
onsemi(安森美)
24+
TO-247
1224
原廠訂貨渠道,支持BOM配單一站式服務(wù)
FAIRCHILD/仙童
24+
NA/
5428
優(yōu)勢(shì)代理渠道,原裝正品,可全系列訂貨開增值稅票
三年內(nèi)
1983
只做原裝正品
HARRIS
23+
NA
141
專做原裝正品,假一罰百!
FAIRCHILD/仙童
24+
TO247
880000
明嘉萊只做原裝正品現(xiàn)貨
FAIRCHILD/仙童
20+
TO-247
36900
原裝優(yōu)勢(shì)主營(yíng)型號(hào)-可開原型號(hào)增稅票
FAIRCHILD
11+
TO247
20
一級(jí)代理,專注軍工、汽車、醫(yī)療、工業(yè)、新能源、電力
FAIRCHILD
23+
TO-247
9526
ON/安森美
19+
TO-247
300
原裝現(xiàn)貨支持BOM配單服務(wù)
Fairchild(飛兆/仙童)
23+
NA
20094
正納10年以上分銷經(jīng)驗(yàn)原裝進(jìn)口正品做服務(wù)做口碑有支持

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