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型號 功能描述 生產(chǎn)廠家 企業(yè) LOGO 操作
IXFV12N120P

Polar Power MOSFET HiPerFET

Polar? Power MOSFET HiPerFET? N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Features ? International standard packages ? Fast recovery diode ? Unclamped Inductive Switching (UIS) rated ? Low package inductance - easy to drive and to protect Advantages ? Easy to mou

IXYS

艾賽斯

IXFV12N120P

N-Channel: Power MOSFETs with Fast Intrinsic Diode (HiPerFET?)

Littelfuse

力特

Polar Power MOSFET HiPerFET

Polar? Power MOSFET HiPerFET? N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Features ? International standard packages ? Fast recovery diode ? Unclamped Inductive Switching (UIS) rated ? Low package inductance - easy to drive and to protect Advantages ? Easy to mou

IXYS

艾賽斯

N-Channel: Power MOSFETs with Fast Intrinsic Diode (HiPerFET?)

Littelfuse

力特

High Voltage HiPerFET Power MOSFET

Features ? International standard package JEDEC TO-247 AD ? Low RDS (on) HDMOSTM process ? Rugged polysilicon gate cell structure ? Fast switching times Applications ? Switch-mode and resonant-mode power supplies ? Motor controls ? Uninterruptible Power Supplies (UPS) ? DC choppers Advan

IXYS

艾賽斯

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 12A@ TC=25℃ ·Drain Source Voltage : VDSS= 1200V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 1.4Ω(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-

ISC

無錫固電

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 12A@ TC=25℃ ·Drain Source Voltage : VDSS= 1200V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 1.35Ω(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC

ISC

無錫固電

Polar Power MOSFET HiPerFET

Polar? Power MOSFET HiPerFET? N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Features ? International standard packages ? Fast recovery diode ? Unclamped Inductive Switching (UIS) rated ? Low package inductance - easy to drive and to protect Advantages ? Easy to mou

IXYS

艾賽斯

IXFV12N120P產(chǎn)品屬性

  • 類型

    描述

  • 型號

    IXFV12N120P

  • 功能描述

    MOSFET 12 Amps 1200V 1 Rds

  • RoHS

    否

  • 制造商

    STMicroelectronics

  • 晶體管極性

    N-Channel

  • 汲極/源極擊穿電壓

    650 V

  • 閘/源擊穿電壓

    25 V

  • 漏極連續(xù)電流

    130 A 電阻汲極/源極

  • RDS（導(dǎo)通）

    0.014 Ohms

  • 配置

    Single

  • 安裝風(fēng)格

    Through Hole

  • 封裝/箱體

    Max247

  • 封裝

    Tube

更新時(shí)間：2025-9-11 17:32:00
IC供應(yīng)商 芯片型號 品牌 批號 封裝 庫存 備注 價(jià)格
IXYS(艾賽斯)
23+
N/A
7500
IXYS(艾賽斯)全系列在售
IXYS
23+
TO-220-3
67986
##公司主營品牌長期供應(yīng)100%原裝現(xiàn)貨可含稅提供技術(shù)
IXYS
22+
TO2203 Short Tab
9000
原廠渠道,現(xiàn)貨配單
IXYS
23+
TO220
8000
只做原裝現(xiàn)貨
IXYS
23+
TO220
7000
IXYS
25+
PLUSTO-220
12300
獨(dú)立分銷商 公司只做原裝 誠心經(jīng)營 免費(fèi)試樣正品保證
IXYS
23+
TO-220-3
11846
一級代理商現(xiàn)貨批發(fā),原裝正品,假一罰十
IXYS/艾賽斯
23+
PLUSTO-220
12300
原廠授權(quán)一級代理,專業(yè)海外優(yōu)勢訂貨,價(jià)格優(yōu)勢、品種
IXYS/艾賽斯
23+
PLUS220
6000
原裝正品，支持實(shí)單

IXFV12N120P芯片相關(guān)品牌

IXFV12N120P規(guī)格書下載地址

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