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IRFZ48價格

參考價格：￥2.3220

型號：IRFZ48NPBF 品牌：INTERNATIONAL 備注：這里有IRFZ48多少錢，2025年最近7天走勢，今日出價，今日競價，IRFZ48批發(fā)/采購報價，IRFZ48行情走勢銷售排行榜，IRFZ48報價。

型號	功能描述	生產(chǎn)廠家&企業(yè)	LOGO
IRFZ48	N-channel enhancement mode TrenchMOS transistor N-channel enhancement mode standard level field-effect power transistor in a plastic envelope using ’trench’ technology. The device features very low on-state resistance and has integral zener diodes giving ESD protection up to 2kV. It is intended for use in switched mode power supplies and genera	Philips 飛利浦	Philips
IRFZ48	Power MOSFET(Vdss=60V, Rds(on)=0.018ohm, Id=50*A) Description Advanced HEXFET? Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, p	IRF	IRF
IRFZ48	Power MOSFET DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220AB package is universally preferred for all commercial-industrial applications at power dissipati	VishayVishay Siliconix 威世科技威世科技半導體	Vishay
IRFZ48	Power MOSFET 文件：1.52086 Mbytes Page：9 Pages	VishayVishay Siliconix 威世科技威世科技半導體	Vishay
IRFZ48	Power MOSFET 文件：1.52086 Mbytes Page：9 Pages	VishayVishay Siliconix 威世科技威世科技半導體	Vishay
IRFZ48	isc N-Channel MOSFET Transistor 文件：310.54 Kbytes Page：2 Pages	ISC 無錫固電	ISC
IRFZ48	Power MOSFET 文件：574.58 Kbytes Page：9 Pages	VishayVishay Siliconix 威世科技威世科技半導體	Vishay
IRFZ48L	Power MOSFET DESCRIPTION Third generation Power MOSFETs from Vishay utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that Power MOSFETs are well known for, provides the designer wit	VishayVishay Siliconix 威世科技威世科技半導體	Vishay
IRFZ48L	HEXFET Power MOSFET Description Advanced HEXFET?Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, p	IRF	IRF
IRFZ48LPBF	Power MOSFET DESCRIPTION Third generation Power MOSFETs from Vishay utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that Power MOSFETs are well known for, provides the designer wit	VishayVishay Siliconix 威世科技威世科技半導體	Vishay
IRFZ48N	N-Ch 60V Fast Switching MOSFETs Super Low Gate Charge 100 EAS Guaranteed Green Device Available Excellent CdV/dt effect decline Advanced high cell density Trench technology	EVVOSEMI 翊歐	EVVOSEMI
IRFZ48N	Advanced Process Technology Advanced HEXFET? Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides	SYC	SYC
IRFZ48N	N-channel enhancement mode TrenchMOS transistor N-channel enhancement mode standard level field-effect power transistor in a plastic envelope using ’trench’ technology. The device features very low on-state resistance and has integral zener diodes giving ESD protection up to 2kV. It is intended for use in switched mode power supplies and genera	Philips 飛利浦	Philips
IRFZ48N	isc N-Channel MOSFET Transistor ? DESCRITION ? reliable device for use in a wide variety of applications ? FEATURES ? Static drain-source on-resistance: RDS(on) ≤14m? ? Enhancement mode ? Fast Switching Speed ? 100 avalanche tested ? Minimum Lot-to-Lot variations for robust device performance and reliable operatio	ISC 無錫固電	ISC
IRFZ48N	HEXFET Power MOSFET Description Advanced HEXFET?Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, pr	IRF	IRF
IRFZ48N	Fast Switching DESCRIPTION ? Designed for use in switch mode power supplies and general purpose applications. FEATURES ? Drain Current –ID= 64A@ TC=25℃ ? Drain Source Voltage- : VDSS= 55V(Min) ? Static Drain-Source On-Resistance : RDS(on) = 0.014Ω (Max) ? Fast Switching	KERSEMI	KERSEMI
IRFZ48NL	Advanced Process Technology Description Advanced HEXFET? Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, p	IRF	IRF
IRFZ48NLPBF	HEXFET Power MOSFET Description Advanced HEXFET? Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, p	IRF	IRF
IRFZ48NPBF	HEXFET Power MOSFET Description Advanced HEXFET?Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, pr	IRF	IRF
IRFZ48NPBF	N-Channel 60 V (D-S) MOSFET FEATURES ? Halogen-free According to IEC 61249-2-21 Definition ? Surface Mount ? Available in Tape and Reel ? Dynamic dV/dt Rating ? Logic-Level Gate Drive ? Fast Switching ? Compliant to RoHS Directive 2002/95/EC	VBSEMI 微碧半導體	VBSEMI
IRFZ48NS	Advanced Process Technology Description Advanced HEXFET? Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, p	IRF	IRF
IRFZ48NS	Advanced Process Technology Description The D2Pak is a surface mount power package capable of accommodating die sizes up to HEX-4. It provides the highest power capability and the lowest possible on-resistance in any existing surface mount package. The D2Pak is suitable for high current applications because of its low inter	KERSEMI	KERSEMI
IRFZ48NS	isc N-Channel MOSFET Transistor ? FEATURES ? With TO-263( D2PAK ) packaging ? High speed switching ? Low gate input resistance ? Standard level gate drive ? Easy to use ? 100 avalanche tested ? Minimum Lot-to-Lot variations for robust device performance and reliable operation ? APPLICATIONS ? Power supply ? Switchi	ISC 無錫固電	ISC
IRFZ48NSPBF	HEXFET Power MOSFET Description Advanced HEXFET? Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, p	IRF	IRF
IRFZ48NSPBF	N-Channel 60-V (D-S) MOSFET FEATURES ? 175 °C Junction Temperature ? TrenchFET? Power MOSFET	VBSEMI 微碧半導體	VBSEMI
IRFZ48PBF	Power MOSFET DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220AB package is universally preferred for all commercial-industrial applications at power dissipati	VishayVishay Siliconix 威世科技威世科技半導體	Vishay
IRFZ48R	Power MOSFET(Vdss=60V, Rds(on)=0.018ohm, Id=50*A) Description Advanced HEXFET? Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, p	IRF	IRF
IRFZ48R	Power MOSFET DESCRIPTION Advanced Power MOSFETs from Vishay utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that Power MOSFETs are well known for, provides the designer with an ext	VishayVishay Siliconix 威世科技威世科技半導體	Vishay
IRFZ48RL	HEXFET Power MOSFET Description Advanced HEXFET? Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low onresistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, pr	IRF	IRF
IRFZ48RL	Power MOSFET DESCRIPTION Advanced Power MOSFETs from Vishay utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that Power MOSFETs are well known for, provides the designer with an ext	VishayVishay Siliconix 威世科技威世科技半導體	Vishay
IRFZ48RLPBF	HEXFET POWER MOSFET ( VDSS = 60V , RDS(on) = 0.018廓 , ID = 50A ) Description Advanced HEXFET? Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low onresistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, pr	IRF	IRF
IRFZ48RLPBF	Power MOSFET DESCRIPTION Advanced Power MOSFETs from Vishay utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that Power MOSFETs are well known for, provides the designer with an ext	VishayVishay Siliconix 威世科技威世科技半導體	Vishay
IRFZ48RPBF	HEXFET? Power MOSFET Description Advanced HEXFET? Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, p	IRF	IRF
IRFZ48RPBF	Power MOSFET DESCRIPTION Advanced Power MOSFETs from Vishay utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that Power MOSFETs are well known for, provides the designer with an ext	VishayVishay Siliconix 威世科技威世科技半導體	Vishay
IRFZ48RS	HEXFET Power MOSFET Description Advanced HEXFET? Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low onresistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, pr	IRF	IRF
IRFZ48RS	Power MOSFET DESCRIPTION Advanced Power MOSFETs from Vishay utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that Power MOSFETs are well known for, provides the designer with an ext	VishayVishay Siliconix 威世科技威世科技半導體	Vishay
IRFZ48RS	Power MOSFET FEATURES ? Advanced process technology ? Dynamic dV/dt ? 175 °C operating temperature ? Fast switching ? Fully avalanche rated ? Drop in replacement of the IRFZ48, SiHFZ48 for linear / audio applications ? Material categorization: for definitions of compliance please see www.vishay.com/do	VishayVishay Siliconix 威世科技威世科技半導體	Vishay
IRFZ48RS_V01	Power MOSFET FEATURES ? Advanced process technology ? Dynamic dV/dt ? 175 °C operating temperature ? Fast switching ? Fully avalanche rated ? Drop in replacement of the IRFZ48, SiHFZ48 for linear / audio applications ? Material categorization: for definitions of compliance please see www.vishay.com/do	VishayVishay Siliconix 威世科技威世科技半導體	Vishay
IRFZ48RSPBF	HEXFET POWER MOSFET ( VDSS = 60V , RDS(on) = 0.018廓 , ID = 50A ) Description Advanced HEXFET? Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low onresistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, pr	IRF	IRF
IRFZ48RSPBF	Power MOSFET DESCRIPTION Advanced Power MOSFETs from Vishay utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that Power MOSFETs are well known for, provides the designer with an ext	VishayVishay Siliconix 威世科技威世科技半導體	Vishay
IRFZ48S	HEXFET Power MOSFET Description Advanced HEXFET?Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, p	IRF	IRF
IRFZ48S	Power MOSFET DESCRIPTION Third generation Power MOSFETs from Vishay utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that Power MOSFETs are well known for, provides the designer wit	VishayVishay Siliconix 威世科技威世科技半導體	Vishay
IRFZ48S	Power MOSFET FEATURES ? Advanced process technology ? Surface-mount (IRFZ48S, SiHFZ48S) ? Low-profile through-hole (SiHFZ48L) ? 175 °C operating temperature ? Fast switching ? Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 Note? * This datasheet provides inf	VishayVishay Siliconix 威世科技威世科技半導體	Vishay
IRFZ48S_V01	Power MOSFET FEATURES ? Advanced process technology ? Surface-mount (IRFZ48S, SiHFZ48S) ? Low-profile through-hole (SiHFZ48L) ? 175 °C operating temperature ? Fast switching ? Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 Note? * This datasheet provides inf	VishayVishay Siliconix 威世科技威世科技半導體	Vishay
IRFZ48SPBF	Power MOSFET DESCRIPTION Third generation Power MOSFETs from Vishay utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that Power MOSFETs are well known for, provides the designer wit	VishayVishay Siliconix 威世科技威世科技半導體	Vishay
IRFZ48STRL	Power MOSFET DESCRIPTION Third generation Power MOSFETs from Vishay utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that Power MOSFETs are well known for, provides the designer wit	VishayVishay Siliconix 威世科技威世科技半導體	Vishay
IRFZ48V	Power MOSFET(Vdss=60V, Rds(on)=12mohm, Id=72A) Description Advanced HEXFET?Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, p	IRF	IRF
IRFZ48VPBF	Advanced Process Technology Description Advanced HEXFET?Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, p	IRF	IRF
IRFZ48VS	Power MOSFET(Vdss=60V, Rds(on)=12mohm, Id=72A) Description Advanced HEXFET?Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, p	IRF	IRF
IRFZ48VSPBF	HEXFET? Power MOSFET Description Advanced HEXFET?Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, p	IRF	IRF
IRFZ48Z	AUTOMOTIVE MOSFET Description Advanced HEXFET?Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, p	IRF	IRF
IRFZ48ZL	AUTOMOTIVE MOSFET Description Advanced HEXFET?Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, p	IRF	IRF
IRFZ48ZS	AUTOMOTIVE MOSFET Description Advanced HEXFET?Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, p	IRF	IRF
IRFZ48_11	Power MOSFET 文件：1.52086 Mbytes Page：9 Pages	VishayVishay Siliconix 威世科技威世科技半導體	Vishay
IRFZ48_V01	Power MOSFET 文件：574.58 Kbytes Page：9 Pages	VishayVishay Siliconix 威世科技威世科技半導體	Vishay
IRFZ48L	Power MOSFET 文件：364.07 Kbytes Page：9 Pages	TFUNK 威世	TFUNK
IRFZ48L	HEXFET Power MOSFET 文件：718.17 Kbytes Page：8 Pages	ARTSCHIP	ARTSCHIP
IRFZ48L	Power MOSFET 文件：357.55 Kbytes Page：9 Pages	VishayVishay Siliconix 威世科技威世科技半導體	Vishay
IRFZ48LPBF	Power MOSFET 文件：357.55 Kbytes Page：9 Pages	VishayVishay Siliconix 威世科技威世科技半導體	Vishay
IRFZ48N	SEMICONDUCTORS 文件：2.43533 Mbytes Page：31 Pages	etc2List of Unclassifed Manufacturers etc未分類制造商etc2未分類制造商	etc2

IRFZ48產(chǎn)品屬性

類型
描述
型號
IRFZ48
制造商
Vishay Angstrohm
功能描述
Trans MOSFET N-CH 60V 50A 3-Pin(3+Tab) TO-220AB
制造商
Vishay Semiconductors
功能描述
TRANS MOSFET N-CH 60V 50A 3PIN TO-220AB - Bulk
制造商
NULL
功能描述
Vishay Intertechnology IRFZ48 MOSFETs

IRFZ48供應商更多...

更新時間：2025-9-10 23:01:00

IC供應商	芯片型號	品牌	批號	封裝	庫存	備注	價格
深圳市得捷芯城科技有限公司	IRFZ48RSPBF	IR(國際整流器)	24+	NA/	8735	原廠直銷,現(xiàn)貨供應,賬期支持!	詢價
深圳市高捷芯城科技有限公司	IRFZ48SPBF	VISHAY(威世)	24+	TO263	7350	現(xiàn)貨供應,當天可交貨!免費送樣,原廠技術(shù)支持!!!	詢價
深圳市凌旭科技有限公司	IRFZ48N	IR	2016+	TO220	3000	只做原裝,假一罰十,公司可開17%增值稅發(fā)票!	詢價
上海意淼電子科技有限公司	IRFZ48NPBF	IR	23+	TO-220	20000	全新原裝假一賠十	詢價
深圳市納艾斯科技有限公司	IRFZ48	CET	24+	TO-220	80000	只做自己庫存全新原裝進口正品假一賠百可開13%增	詢價
深圳市卓越微芯電子有限公司	IRFZ48NS	IR	25+	TO-263	9600	百分百原裝正品真實公司現(xiàn)貨庫存本公司只做原裝可	詢價
深圳市金芯世紀電子有限公司	IRFZ48NSTRL	IR/VISHAY	22+	SOT-263	100000	代理渠道/只做原裝/可含稅	詢價
深圳市科芯源微電子有限公司	IRFZ48RPBF	INFINEON/英飛凌	25+	TO-220AB	54648	百分百原裝現(xiàn)貨實單必成歡迎詢價	詢價
中天科工半導體（深圳）有限公司	IRFZ48NS	INFINEON/英飛凌	25+	TO-263	45000	IR全新現(xiàn)貨IRFZ48NS即刻詢購立享優(yōu)惠#長期有排單訂	詢價
深圳市華睿芯科技有限公司	IRFZ48NS	IOR	24+	TO263	20000	全新原廠原裝，進口正品現(xiàn)貨，正規(guī)渠道可含稅?。?/div>	詢價

IRFZ48芯片相關(guān)品牌

IRFZ48規(guī)格書下載地址

IRFZ48參數(shù)引腳圖相關(guān)

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IRFZ48數(shù)據(jù)表相關(guān)新聞

IRFZ44NSTRLPBF 原裝正品.倉庫現(xiàn)貨
華富芯深圳智能科技有限公司
2021-11-24
IRG4PC40KPBF 原裝正品.倉庫現(xiàn)貨
華富芯深圳智能科技有限公司
2021-11-23
IRFZ44NPBF原裝現(xiàn)貨
IRFZ44NPBF原裝正品
2021-8-10
IRG4PC50WPBF
屬性參數(shù)值商品目錄 IGBT管集電極電流（Ic）（最大值） 55A 集射極擊穿電壓（最大值） 600V 類型 - 不同 Vge，Ic 時的 Vce（on） 2.3V @ 15V，27A 柵極閾值電壓-VGE(th) 6V @ 250uA
2020-10-27
IRGB15B60KDPBF IR全新正品現(xiàn)貨
原裝正品現(xiàn)貨熱賣中，煥盛達-專注原裝用芯服務；
2020-7-17
IRFZ44NPBF選拓億芯電子，國際電子元器件供應商
元器件優(yōu)質(zhì)供應
2019-11-1

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