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IRFZ48N價(jià)格

參考價(jià)格：￥2.3220

型號(hào)：IRFZ48NPBF 品牌：INTERNATIONAL 備注：這里有IRFZ48N多少錢，2025年最近7天走勢(shì)，今日出價(jià)，今日競價(jià)，IRFZ48N批發(fā)/采購報(bào)價(jià)，IRFZ48N行情走勢(shì)銷售排行榜，IRFZ48N報(bào)價(jià)。
型號(hào) 功能描述 生產(chǎn)廠家&企業(yè) LOGO 操作
IRFZ48N

N-channel enhancement mode TrenchMOS transistor

N-channel enhancement mode standard level field-effect power transistor in a plastic envelope using ’trench’ technology. The device features very low on-state resistance and has integral zener diodes giving ESD protection up to 2kV. It is intended for use in switched mode power supplies and genera

Philips

飛利浦

IRFZ48N

isc N-Channel MOSFET Transistor

? DESCRITION ? reliable device for use in a wide variety of applications ? FEATURES ? Static drain-source on-resistance: RDS(on) ≤14m? ? Enhancement mode ? Fast Switching Speed ? 100 avalanche tested ? Minimum Lot-to-Lot variations for robust device performance and reliable operatio

ISC

無錫固電

IRFZ48N

HEXFET Power MOSFET

Description Advanced HEXFET?Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, pr

IRF

IRFZ48N

Fast Switching

DESCRIPTION ? Designed for use in switch mode power supplies and general purpose applications. FEATURES ? Drain Current –ID= 64A@ TC=25℃ ? Drain Source Voltage- : VDSS= 55V(Min) ? Static Drain-Source On-Resistance : RDS(on) = 0.014Ω (Max) ? Fast Switching

KERSEMI

IRFZ48N

N-Ch 60V Fast Switching MOSFETs

Super Low Gate Charge 100 EAS Guaranteed Green Device Available Excellent CdV/dt effect decline Advanced high cell density Trench technology

EVVOSEMI

翊歐

IRFZ48N

Advanced Process Technology

Advanced HEXFET? Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides

SYC

IRFZ48N

SEMICONDUCTORS

文件：2.43533 Mbytes Page：31 Pages

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etc未分類制造商etc2未分類制造商

Advanced Process Technology

Description Advanced HEXFET? Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, p

IRF

HEXFET Power MOSFET

Description Advanced HEXFET? Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, p

IRF

HEXFET Power MOSFET

Description Advanced HEXFET?Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, pr

IRF

N-Channel 60 V (D-S) MOSFET

FEATURES ? Halogen-free According to IEC 61249-2-21 Definition ? Surface Mount ? Available in Tape and Reel ? Dynamic dV/dt Rating ? Logic-Level Gate Drive ? Fast Switching ? Compliant to RoHS Directive 2002/95/EC

VBSEMI

微碧半導(dǎo)體

Advanced Process Technology

Description Advanced HEXFET? Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, p

IRF

Advanced Process Technology

Description The D2Pak is a surface mount power package capable of accommodating die sizes up to HEX-4. It provides the highest power capability and the lowest possible on-resistance in any existing surface mount package. The D2Pak is suitable for high current applications because of its low inter

KERSEMI

isc N-Channel MOSFET Transistor

? FEATURES ? With TO-263( D2PAK ) packaging ? High speed switching ? Low gate input resistance ? Standard level gate drive ? Easy to use ? 100 avalanche tested ? Minimum Lot-to-Lot variations for robust device performance and reliable operation ? APPLICATIONS ? Power supply ? Switchi

ISC

無錫固電

HEXFET Power MOSFET

Description Advanced HEXFET? Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, p

IRF

N-Channel 60-V (D-S) MOSFET

FEATURES ? 175 °C Junction Temperature ? TrenchFET? Power MOSFET

VBSEMI

微碧半導(dǎo)體

N-Channel MOSFET Transistor

文件：338.6 Kbytes Page：2 Pages

ISC

無錫固電

ADVANCED PROCESS TECHNOLOGY

文件：232.23 Kbytes Page：8 Pages

IRF

ADVANCED PROCESS TECHNOLOGY

文件：232.23 Kbytes Page：8 Pages

IRF

ADVANCED PROCESS TECHNOLOGY

文件：306.62 Kbytes Page：11 Pages

IRF

ADVANCED PROCESS TECHNOLOGY

文件：306.62 Kbytes Page：11 Pages

IRF

ADVANCED PROCESS TECHNOLOGY

文件：306.62 Kbytes Page：11 Pages

IRF

IRFZ48N產(chǎn)品屬性

  • 類型

    描述

  • 型號(hào)

    IRFZ48N

  • 功能描述

    MOSFET MOSFET, 55V, 64A, 14 mOhm, 54 nC Qg, TO-220AB

  • RoHS

    否

  • 制造商

    STMicroelectronics

  • 晶體管極性

    N-Channel

  • 汲極/源極擊穿電壓

    650 V

  • 閘/源擊穿電壓

    25 V

  • 漏極連續(xù)電流

    130 A 電阻汲極/源極

  • RDS（導(dǎo)通）

    0.014 Ohms

  • 配置

    Single

  • 安裝風(fēng)格

    Through Hole

  • 封裝/箱體

    Max247

  • 封裝

    Tube

更新時(shí)間：2025-9-10 22:58:00
IC供應(yīng)商 芯片型號(hào) 品牌 批號(hào) 封裝 庫存 備注 價(jià)格
IR
2016+
TO220
3000
只做原裝,假一罰十,公司可開17%增值稅發(fā)票!
IR
23+
FAX:6564815466
12000
全新原裝假一賠十
IR
25+
TO-263
9600
百分百原裝正品 真實(shí)公司現(xiàn)貨庫存 本公司只做原裝 可
INFINEON/英飛凌
25+
TO-263
45000
IR全新現(xiàn)貨IRFZ48NS即刻詢購立享優(yōu)惠#長期有排單訂
IR
24+
TO 220
161056
明嘉萊只做原裝正品現(xiàn)貨
IR
13+
TO220AB
1000
原裝現(xiàn)貨價(jià)格有優(yōu)勢(shì)量大可以發(fā)貨
IR
16+
TO-220
20
一級(jí)代理,專注軍工、汽車、醫(yī)療、工業(yè)、新能源、電力
IR
21+
TO-220
18000
全新原裝公司現(xiàn)貨
INFINEON/英飛凌
25+
原廠封裝
10280
原廠授權(quán)一級(jí)代理,專注軍工、汽車、醫(yī)療、工業(yè)、新能源、電力!
IR
22+
D2-PAK
9450
原裝正品，實(shí)單請(qǐng)聯(lián)系

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