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型號(hào) 功能描述 生產(chǎn)廠家 企業(yè) LOGO 操作
IPD60R180C7

N-Channel MOSFET Transistor

? DESCRITION ? Suitable for hard and soft switching ? FEATURES ? Static drain-source on-resistance: RDS(on)≤0.18? ? Enhancement mode: ? 100 avalanche tested ? Minimum Lot-to-Lot variations for robust device performance and reliable operation

ISC

無(wú)錫固電

IPD60R180C7

CoolMOS ? C7 超結(jié) MOSFET 在 PFC 和 LLC 拓?fù)渲刑峁┮涣鞯男阅?/p>

Infineon

英飛凌

IPD60R180C7

Metal Oxide Semiconductor Field Effect Transistor

文件：1.17737 Mbytes Page：15 Pages

Infineon

英飛凌

Metal Oxide Semiconductor Field Effect Transistor

文件：1.17737 Mbytes Page：15 Pages

Infineon

英飛凌

N-Channel MOSFET Transistor

? DESCRITION ? Suitable for hard and soft switching ? FEATURES ? Static drain-source on-resistance: RDS(on)≤0.18? ? Enhancement mode: ? 100 avalanche tested ? Minimum Lot-to-Lot variations for robust device performance and reliable operation

ISC

無(wú)錫固電

N-Channel MOSFET Transistor

? DESCRIPTION ? Combines the experience of the leading SJ MOSFET supplier with high class innovation ? FEATURES ? Static drain-source on-resistance: RDS(on) ≤0.18? ? Enhancement mode ? Fast Switching Speed ? 100 avalanche tested ? Minimum Lot-to-Lot variations for robust devic

ISC

無(wú)錫固電

N-Channel MOSFET Transistor

? DESCRITION ? Fast Switching ? FEATURES ? Static drain-source on-resistance: RDS(on)≤180m? ? Enhancement mode: ? 100 avalanche tested ? Minimum Lot-to-Lot variations for robust device performance and reliable operation

ISC

無(wú)錫固電

Metal Oxide Semiconductor Field Effect Transistor

Features ?Suitableforhardandsoftswitching(PFCandhighperformanceLLC) ?IncreasedMOSFETdv/dtruggednessto120V/ns ?IncreasedefficiencyduetobestinclassFOMRDS(on)*EossandRDS(on)*Qg ?BestinclassRDS(on)/package ?QualifiedforindustrialgradeapplicationsaccordingtoJEDEC(J-STD20 andJESD22)

Infineon

英飛凌

Material Content Data Sheet

文件：33.1 Kbytes Page：1 Pages

Infineon

英飛凌

更新時(shí)間：2025-9-17 23:01:00
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7850
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INFINEON
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31
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10000
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24+
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25000
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Infineon(英飛凌)
23+
PG-TO252-3
19850
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