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GA2價格

參考價格:¥730.9031

型號:GA2 品牌:Bogen Communications 備注:這里有GA2多少錢,2025年最近7天走勢,今日出價,今日競價,GA2批發(fā)/采購報價,GA2行情走勢銷售排行榜,GA2報價。
型號 功能描述 生產(chǎn)廠家&企業(yè) LOGO 操作
GA2

包裝:袋 描述:GAUGE ADAPTOR 工業(yè)自動化與控制 氣動,液壓 - 配件

ETC

知名廠家

SCRs Nanosecond Switching, Planar

DESCRIPTION The Microsemi Nanosecond Thyristor Switch combines the turn-on speed of logic level transistors with high current switching capability in SCRs. FEATURES ● Rise Time : 10ns ● Delay Time : 10ns ● Recovery Time : 0.5μS ● Pulse Current : to 100A ● Turn-on with 20ns, 10mA Gate Pulse

Microsemi

美高森美

SCRs Nanosecond Switching, Planar

DESCRIPTION The Microsemi Nanosecond Thyristor Switch combines the turn-on speed of logic level transistors with high current switching capability in SCRs. FEATURES ● Rise Time : 10ns ● Delay Time : 10ns ● Recovery Time : 0.5μS ● Pulse Current : to 100A ● Turn-on with 20ns, 10mA Gate Pulse

Microsemi

美高森美

HALF-BRIDGE IGBT INT-A-PAK

Features ? Generation 4 IGBT Technology ? Standard speed: optimized for hard switching operating frequencies up to 1000 Hz ? Very Low Conduction Losses ? Industry standard package Benefits ? Increased operating efficiency ? Direct mounting to heatsink ? Performance optimi

IRF

HALF-BRIDGE IGBT INT-A-PAK Standard Speed IGBT

Features ? Generation 4 IGBT Technology ? Standard speed: optimized for hard switching operating frequencies up to 1000 Hz ? Very Low Conduction Losses ? Industry standard package Benefits ? Increased operating efficiency ? Direct mounting to heatsink ? Performance optimi

IRF

Half-Bridge IGBT INT-A-PAK (Standard Speed IGBT), 200 A

FEATURES ? Generation 4 IGBT technology ? Standard: Optimized for hard switching speed DC to 1 kHz ? Very low conduction losses ? Industry standard package ? UL approved file E78996 ? Compliant to RoHS directive 2002/95/EC ? Designed and qualified for industrial level BENEFITS ? Increased

VishayVishay Siliconix

威世科技威世科技半導體

High Side Switch Chopper Module Ultra-Fast Speed IGBT

Features ? UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode ? Very low conduction and switching losses ? HEXFRED? antiparallel diodes with ultra- soft recovery ? Industry standard package ? UL approved ? Generation 4 IGBT technology B

IRF

INSULATED GATE BIPOLAR TRANSISTOR

INSULATED GATE BIPOLAR TRANSISTOR Features ? Standard : Optimized for minimum saturation voltage and low operating frequencies up to 1kHz ? Lowest conduction losses available ? Fully isolated package ( 2,500 volt AC) ? Very low internal inductance ( 5 nH typ.) ? Industry standa

IRF

INSULATED GATE BIPOLAR TRANSISTOR

INSULATED GATE BIPOLAR TRANSISTOR Features ? Standard : Optimized for minimum saturation voltage and low operating frequencies up to 1kHz ? Lowest conduction losses available ? Fully isolated package ( 2,500 volt AC) ? Very low internal inductance ( 5 nH typ.) ? Industry standa

IRF

Insulated Gate Bipolar Transistor Ultralow VCE(on), 342 A

Insulated Gate Bipolar Transistor Ultralow VCERevision: 22-Jul-10 (on), 342 A FEATURES ? Standard: Optimized for minimum saturation voltage and low speed up to 5 kHz ? Lowest conduction losses available ? Fully isolated package (2500 VAC) ? Very low internal inductance (5 nH typi

VishayVishay Siliconix

威世科技威世科技半導體

INSULATED GATE BIPOLAR TRANSISTOR

INSULATED GATE BIPOLAR TRANSISTOR Features ? Standard : Optimized for minimum saturation voltage and low operating frequencies up to 1kHz ? Lowest conduction losses available ? Fully isolated package ( 2,500 volt AC) ? Very low internal inductance ( 5 nH typ.) ? Industry standa

IRF

Insulated Gate Bipolar Transistor Ultralow VCE(on), 342 A

Insulated Gate Bipolar Transistor Ultralow VCERevision: 22-Jul-10 (on), 342 A FEATURES ? Standard: Optimized for minimum saturation voltage and low speed up to 5 kHz ? Lowest conduction losses available ? Fully isolated package (2500 VAC) ? Very low internal inductance (5 nH typi

VishayVishay Siliconix

威世科技威世科技半導體

Insulated Gate Bipolar Transistor Ultralow VCE(on), 342 A

FEATURES ? Standard: Optimized for minimum saturation voltage and low speed up to 5 kHz ? Lowest conduction losses available ? Fully isolated package (2500 VAC) ? Very low internal inductance (5 nH typical) ? Industry standard outline ? UL approved file E78996 ? Compliant to RoHS directive

VishayVishay Siliconix

威世科技威世科技半導體

Insulated Gate Bipolar Transistor Ultralow VCE(on), 342 A

FEATURES ? Standard: Optimized for minimum saturation voltage and low speed up to 5 kHz ? Lowest conduction losses available ? Fully isolated package (2500 VAC) ? Very low internal inductance (5 nH typical) ? Industry standard outline ? UL approved file E78996 ? Compliant to RoHS directive

VishayVishay Siliconix

威世科技威世科技半導體

INSULATED GATE BIPOLAR TRANSISTOR

Features ? UltraFast: Optimized for minimum saturation voltage and operating frequencies up to 40 kHz in hard switching, > 200 kHz in resonant mode ? Very low conduction and switching losses ? Fully isolate package ( 2,500 Volt AC/RMS) ? Very low internal inductance ( ≤ 5 nH typ.) ?

IRF

Insulated Gate Bipolar Transistor (Ultrafast Speed IGBT), 100 A

FEATURES ? Ultrafast: Optimized for minimum saturation voltage and speed up to 40 kHz in hard switching, > 200 kHz in resonant mode ? Very low conduction and switching losses ? Fully isolate package (2500 VAC/RMS) ? Very low internal inductance (≤ 5 nH typical) ? Industry standard o

VishayVishay Siliconix

威世科技威世科技半導體

IGBT

DESCRIPTION · Low VCE(sat) for minimum on-stateconduction losses · Very high current, fast switchingIGBT · MOS Gate turn-on drive simplicity APPLICATIONS · AC motor speed control · DC servo and robot drives · Uninterruptible power supplies (UPS)

ISC

無錫固電

HALF-BRIDGE IGBT DOUBLE INT-A-PAK

Features ? UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode ? Very low conduction and switching losses ? HEXFRED? antiparallel diodes with ultra- soft recovery ? Industry standard package ? UL approved ? Generation 4 IGBT technology B

IRF

HALF-BRIDGE IGBT INT-A-PAK Ultra-Fast Speed IGBT

HALF-BRIDGE IGBT INT-A-PAK Ultra-Fast Speed IGBT Features ? UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200kHz in resonant mode ? Very low conduction and switching losses ? HEXFRED?antiparallel diodes with ultra-soft recovery ? Industry stan

IRF

Half-Bridge IGBT INT-A-PAK (Ultrafast Speed IGBT), 200 A

Half-Bridge IGBT INT-A-PAK (Ultrafast Speed IGBT), 200 A FEATURES ? Generation 4 IGBT technology ? Ultrafast: Optimized for high speed 8 kHz to 40 kHz in hard switching, > 200 kHz in resonant mode ? Very low conduction and switching losses ? HEXFRED? antiparallel diodes with ul

VishayVishay Siliconix

威世科技威世科技半導體

Ultra-FastTM Speed IGBT

HALF-BRIDGE IGBT INT-A-PAK Ultra-Fast Speed IGBT Features ? Generation 4 IGBT technology ? UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200kHz in resonant mode ? Very low conduction and switching losses ? HEXFREDTM antiparallel diodes with ul

IRF

SCRs Nanosecond Switching, Planar

DESCRIPTION The Microsemi Nanosecond Thyristor Switch combines the turn-on speed of logic level transistors with high current switching capability in SCRs. FEATURES ● Rise Time : 10ns ● Delay Time : 10ns ● Recovery Time : 0.5μS ● Pulse Current : to 100A ● Turn-on with 20ns, 10mA Gate Pulse

Microsemi

美高森美

SCRs Nanosecond Switching, Planar

DESCRIPTION The Microsemi Nanosecond Thyristor Switch combines the turn-on speed of logic level transistors with high current switching capability in SCRs. FEATURES ● Rise Time : 10ns ● Delay Time : 10ns ● Recovery Time : 0.5μS ● Pulse Current : to 100A ● Turn-on with 20ns, 10mA Gate Pulse

Microsemi

美高森美

封裝/外殼:磁珠 包裝:散裝 描述:THERM NTC 2.252KOHM 3976K BEAD 傳感器,變送器 溫度傳感器 - NTC 熱敏電阻器

ETC

知名廠家

SILICON CONTROLLED RECTIFIER NANOSECOND SWITCHING PLANAR

文件:173.42 Kbytes Page:4 Pages

DIGITRON

SILICON CONTROLLED RECTIFIER NANOSECOND SWITCHING PLANAR

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SILICON CONTROLLED RECTIFIER NANOSECOND SWITCHING PLANAR

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Normally ??OFF Silicon Carbide Junction Transistor

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OFF Silicon Carbide Junction Transistor

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OFF Silicon Carbide Junction Transistor

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OFF Silicon Carbide Junction Transistor

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Silicon Carbide Junction Transistor/Schottky Diode Co-Pack

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GENESIC

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文件:958.66 Kbytes Page:9 Pages

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Absolute encoders - parallel

文件:591.24 Kbytes Page:4 Pages

IVO

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文件:591.24 Kbytes Page:4 Pages

IVO

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Absolute encoders - parallel

文件:591.24 Kbytes Page:4 Pages

IVO

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Absolute encoders - parallel

文件:591.24 Kbytes Page:4 Pages

IVO

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IVO

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IVO

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Absolute encoders - parallel

文件:591.24 Kbytes Page:4 Pages

IVO

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Absolute encoders - parallel

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IVO

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IVO

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Absolute encoders - parallel

文件:591.24 Kbytes Page:4 Pages

IVO

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Absolute encoders - parallel

文件:591.24 Kbytes Page:4 Pages

IVO

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IVO

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IVO

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Absolute encoders - parallel

文件:591.24 Kbytes Page:4 Pages

IVO

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Absolute encoders - parallel

文件:591.24 Kbytes Page:4 Pages

IVO

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Absolute encoders - parallel

文件:591.24 Kbytes Page:4 Pages

IVO

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Absolute encoders - parallel

文件:591.24 Kbytes Page:4 Pages

IVO

堡盟電子

Absolute encoders - parallel

文件:591.24 Kbytes Page:4 Pages

IVO

堡盟電子

Absolute encoders - parallel

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IVO

堡盟電子

Absolute encoders - parallel

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IVO

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Absolute encoders - parallel

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IVO

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瑞薩

GA2產(chǎn)品屬性

  • 類型

    描述

  • 型號

    GA2

  • 制造商

    Bogen Communications

  • 功能描述

    Amplifier, general purpose, 1.5 watt

  • 制造商

    Bogen Communications

  • 功能描述

    1.5W Utility Amplifier

  • 制造商

    ENERPAC

  • 功能描述

    GAUGE ADAPTOR

更新時間:2025-8-31 14:14:00
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22+
DIP10
5000
進口原裝!現(xiàn)貨庫存
IR
23+
模塊
19706
##公司主營品牌長期供應100%原裝現(xiàn)貨可含稅提供技術
IR
24+
模塊
200
單開關型
TQS
2020+
DIP-24
18600
百分百原裝正品 真實公司現(xiàn)貨庫存 本公司只做原裝 可
19+
MODULE
1290
主打模塊,大量現(xiàn)貨供應商QQ2355605126
SHARP
ROHS全新原裝
SMD
257000
東芝半導體QQ350053121正納全系列代理經(jīng)銷
MURATA/村田
2019+
SMD
200000
原廠渠道,提供技術支持

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