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SCRs Nanosecond Switching, Planar

DESCRIPTION The Microsemi Nanosecond Thyristor Switch combines the turn-on speed of logic level transistors with high current switching capability in SCRs. FEATURES ● Rise Time : 10ns ● Delay Time : 10ns ● Recovery Time : 0.5μS ● Pulse Current : to 100A ● Turn-on with 20ns, 10mA Gate Pulse

SILICON CONTROLLED RECTIFIER NANOSECOND SWITCHING PLANAR

文件：173.42 Kbytes Page：4 Pages

SCRs Nanosecond Switching, Planar

DESCRIPTION The Microsemi Nanosecond Thyristor Switch combines the turn-on speed of logic level transistors with high current switching capability in SCRs. FEATURES ● Rise Time : 10ns ● Delay Time : 10ns ● Recovery Time : 0.5μS ● Pulse Current : to 100A ● Turn-on with 20ns, 10mA Gate Pulse

HALF-BRIDGE IGBT INT-A-PAK

Features ? Generation 4 IGBT Technology ? Standard speed: optimized for hard switching operating frequencies up to 1000 Hz ? Very Low Conduction Losses ? Industry standard package Benefits ? Increased operating efficiency ? Direct mounting to heatsink ? Performance optimi

HALF-BRIDGE IGBT INT-A-PAK Standard Speed IGBT

Features ? Generation 4 IGBT Technology ? Standard speed: optimized for hard switching operating frequencies up to 1000 Hz ? Very Low Conduction Losses ? Industry standard package Benefits ? Increased operating efficiency ? Direct mounting to heatsink ? Performance optimi

Half-Bridge IGBT INT-A-PAK (Standard Speed IGBT), 200 A

FEATURES ? Generation 4 IGBT technology ? Standard: Optimized for hard switching speed DC to 1 kHz ? Very low conduction losses ? Industry standard package ? UL approved file E78996 ? Compliant to RoHS directive 2002/95/EC ? Designed and qualified for industrial level BENEFITS ? Increased

High Side Switch Chopper Module Ultra-Fast Speed IGBT

Features ? UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode ? Very low conduction and switching losses ? HEXFRED? antiparallel diodes with ultra- soft recovery ? Industry standard package ? UL approved ? Generation 4 IGBT technology B

INSULATED GATE BIPOLAR TRANSISTOR

INSULATED GATE BIPOLAR TRANSISTOR Features ? Standard : Optimized for minimum saturation voltage and low operating frequencies up to 1kHz ? Lowest conduction losses available ? Fully isolated package ( 2,500 volt AC) ? Very low internal inductance ( 5 nH typ.) ? Industry standa

INSULATED GATE BIPOLAR TRANSISTOR

INSULATED GATE BIPOLAR TRANSISTOR Features ? Standard : Optimized for minimum saturation voltage and low operating frequencies up to 1kHz ? Lowest conduction losses available ? Fully isolated package ( 2,500 volt AC) ? Very low internal inductance ( 5 nH typ.) ? Industry standa

Insulated Gate Bipolar Transistor Ultralow VCE(on), 342 A

Insulated Gate Bipolar Transistor Ultralow VCERevision: 22-Jul-10 (on), 342 A FEATURES ? Standard: Optimized for minimum saturation voltage and low speed up to 5 kHz ? Lowest conduction losses available ? Fully isolated package (2500 VAC) ? Very low internal inductance (5 nH typi

Insulated Gate Bipolar Transistor Ultralow VCE(on), 342 A

FEATURES ? Standard: Optimized for minimum saturation voltage and low speed up to 5 kHz ? Lowest conduction losses available ? Fully isolated package (2500 VAC) ? Very low internal inductance (5 nH typical) ? Industry standard outline ? UL approved file E78996 ? Compliant to RoHS directive

INSULATED GATE BIPOLAR TRANSISTOR

INSULATED GATE BIPOLAR TRANSISTOR Features ? Standard : Optimized for minimum saturation voltage and low operating frequencies up to 1kHz ? Lowest conduction losses available ? Fully isolated package ( 2,500 volt AC) ? Very low internal inductance ( 5 nH typ.) ? Industry standa

Insulated Gate Bipolar Transistor Ultralow VCE(on), 342 A

Insulated Gate Bipolar Transistor Ultralow VCERevision: 22-Jul-10 (on), 342 A FEATURES ? Standard: Optimized for minimum saturation voltage and low speed up to 5 kHz ? Lowest conduction losses available ? Fully isolated package (2500 VAC) ? Very low internal inductance (5 nH typi

Insulated Gate Bipolar Transistor Ultralow VCE(on), 342 A

FEATURES ? Standard: Optimized for minimum saturation voltage and low speed up to 5 kHz ? Lowest conduction losses available ? Fully isolated package (2500 VAC) ? Very low internal inductance (5 nH typical) ? Industry standard outline ? UL approved file E78996 ? Compliant to RoHS directive

INSULATED GATE BIPOLAR TRANSISTOR

Features ? UltraFast: Optimized for minimum saturation voltage and operating frequencies up to 40 kHz in hard switching, > 200 kHz in resonant mode ? Very low conduction and switching losses ? Fully isolate package ( 2,500 Volt AC/RMS) ? Very low internal inductance ( ≤ 5 nH typ.) ?

Insulated Gate Bipolar Transistor (Ultrafast Speed IGBT), 100 A

FEATURES ? Ultrafast: Optimized for minimum saturation voltage and speed up to 40 kHz in hard switching, > 200 kHz in resonant mode ? Very low conduction and switching losses ? Fully isolate package (2500 VAC/RMS) ? Very low internal inductance (≤ 5 nH typical) ? Industry standard o

IGBT

DESCRIPTION · Low VCE(sat) for minimum on-stateconduction losses · Very high current, fast switchingIGBT · MOS Gate turn-on drive simplicity APPLICATIONS · AC motor speed control · DC servo and robot drives · Uninterruptible power supplies (UPS)

HALF-BRIDGE IGBT DOUBLE INT-A-PAK

Features ? UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode ? Very low conduction and switching losses ? HEXFRED? antiparallel diodes with ultra- soft recovery ? Industry standard package ? UL approved ? Generation 4 IGBT technology B

HALF-BRIDGE IGBT INT-A-PAK Ultra-Fast Speed IGBT

HALF-BRIDGE IGBT INT-A-PAK Ultra-Fast Speed IGBT Features ? UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200kHz in resonant mode ? Very low conduction and switching losses ? HEXFRED?antiparallel diodes with ultra-soft recovery ? Industry stan

Half-Bridge IGBT INT-A-PAK (Ultrafast Speed IGBT), 200 A

Half-Bridge IGBT INT-A-PAK (Ultrafast Speed IGBT), 200 A FEATURES ? Generation 4 IGBT technology ? Ultrafast: Optimized for high speed 8 kHz to 40 kHz in hard switching, > 200 kHz in resonant mode ? Very low conduction and switching losses ? HEXFRED? antiparallel diodes with ul

Ultra-FastTM Speed IGBT

HALF-BRIDGE IGBT INT-A-PAK Ultra-Fast Speed IGBT Features ? Generation 4 IGBT technology ? UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200kHz in resonant mode ? Very low conduction and switching losses ? HEXFREDTM antiparallel diodes with ul

封裝/外殼：3-SIP 模塊 包裝：散裝 描述：SENSOR PRESS GAUGE 5\ 傳感器，變送器 壓力傳感器、變送器

封裝/外殼：3-SIP 模塊 包裝：散裝 描述：SENSOR PRESS DIFF 10\ 傳感器，變送器 壓力傳感器、變送器

SILICON CONTROLLED RECTIFIER NANOSECOND SWITCHING PLANAR

文件：173.42 Kbytes Page：4 Pages

TOGGLE SWITCHES - SUB MINIATURE

文件：718.4 Kbytes Page：5 Pages

Bulk Metal? Foil Technology Conformally Coated Precision Current Sensing Resistors with TCR of 5 ppm/°C and values down to 5 mΩ

文件：105.62 Kbytes Page：4 Pages

100/200

文件：3.83844 Mbytes Page：2 Pages

Easy Identification and Tracing with 10-color Cable

文件：1.18408 Mbytes Page：2 Pages

Resistant to tears and punctures

文件：225.28 Kbytes Page：2 Pages