位置：首頁 > IC中文資料第6697頁 > EN29F512
| 型號 | 功能描述 | 生產(chǎn)廠家 企業(yè) | LOGO | 操作 |
|---|---|---|---|---|
EN29F512 | 512 Kbit (64K x 8-bit) 5V Flash Memory GENERAL DESCRIPTION The EN29F512 is a 512-Kbit, electrically erasable, read/write non-volatile flash memory. Organized into 64K bytes with 8 bits per byte, the 512K of memory is arranged in four uniform sectors of 16Kbytes each. Any byte can be programmed typically in 7μs. The EN29F512 features 5 | EON 宜揚科技 |   | |
EN29F512 | 512 Kbit (64K x 8-bit) 5V Flash Memory | EON 宜揚科技 | | |
512 Kbit (64K x 8-bit) 5V Flash Memory GENERAL DESCRIPTION The EN29F512 is a 512-Kbit, electrically erasable, read/write non-volatile flash memory. Organized into 64K bytes with 8 bits per byte, the 512K of memory is arranged in four uniform sectors of 16Kbytes each. Any byte can be programmed typically in 7μs. The EN29F512 features 5 | EON 宜揚科技 | | ||
512 Kbit (64K x 8-bit) 5V Flash Memory GENERAL DESCRIPTION The EN29F512 is a 512-Kbit, electrically erasable, read/write non-volatile flash memory. Organized into 64K bytes with 8 bits per byte, the 512K of memory is arranged in four uniform sectors of 16Kbytes each. Any byte can be programmed typically in 7μs. The EN29F512 features 5 | EON 宜揚科技 | | ||
512 Kbit (64K x 8-bit) 5V Flash Memory GENERAL DESCRIPTION The EN29F512 is a 512-Kbit, electrically erasable, read/write non-volatile flash memory. Organized into 64K bytes with 8 bits per byte, the 512K of memory is arranged in four uniform sectors of 16Kbytes each. Any byte can be programmed typically in 7μs. The EN29F512 features 5 | EON 宜揚科技 | | ||
512 Kbit (64K x 8-bit) 5V Flash Memory GENERAL DESCRIPTION The EN29F512 is a 512-Kbit, electrically erasable, read/write non-volatile flash memory. Organized into 64K bytes with 8 bits per byte, the 512K of memory is arranged in four uniform sectors of 16Kbytes each. Any byte can be programmed typically in 7μs. The EN29F512 features 5 | EON 宜揚科技 | | ||
512 Kbit (64K x 8-bit) 5V Flash Memory GENERAL DESCRIPTION The EN29F512 is a 512-Kbit, electrically erasable, read/write non-volatile flash memory. Organized into 64K bytes with 8 bits per byte, the 512K of memory is arranged in four uniform sectors of 16Kbytes each. Any byte can be programmed typically in 7μs. The EN29F512 features 5 | EON 宜揚科技 | | ||
512 Kbit (64K x 8-bit) 5V Flash Memory GENERAL DESCRIPTION The EN29F512 is a 512-Kbit, electrically erasable, read/write non-volatile flash memory. Organized into 64K bytes with 8 bits per byte, the 512K of memory is arranged in four uniform sectors of 16Kbytes each. Any byte can be programmed typically in 7μs. The EN29F512 features 5 | EON 宜揚科技 | | ||
512 Kbit (64K x 8-bit) 5V Flash Memory GENERAL DESCRIPTION The EN29F512 is a 512-Kbit, electrically erasable, read/write non-volatile flash memory. Organized into 64K bytes with 8 bits per byte, the 512K of memory is arranged in four uniform sectors of 16Kbytes each. Any byte can be programmed typically in 7μs. The EN29F512 features 5 | EON 宜揚科技 | | ||
512 Kbit (64K x 8-bit) 5V Flash Memory GENERAL DESCRIPTION The EN29F512 is a 512-Kbit, electrically erasable, read/write non-volatile flash memory. Organized into 64K bytes with 8 bits per byte, the 512K of memory is arranged in four uniform sectors of 16Kbytes each. Any byte can be programmed typically in 7μs. The EN29F512 features 5 | EON 宜揚科技 | | ||
512 Kbit (64K x 8-bit) 5V Flash Memory GENERAL DESCRIPTION The EN29F512 is a 512-Kbit, electrically erasable, read/write non-volatile flash memory. Organized into 64K bytes with 8 bits per byte, the 512K of memory is arranged in four uniform sectors of 16Kbytes each. Any byte can be programmed typically in 7μs. The EN29F512 features 5 | EON 宜揚科技 | | ||
512 Kbit (64K x 8-bit) 5V Flash Memory GENERAL DESCRIPTION The EN29F512 is a 512-Kbit, electrically erasable, read/write non-volatile flash memory. Organized into 64K bytes with 8 bits per byte, the 512K of memory is arranged in four uniform sectors of 16Kbytes each. Any byte can be programmed typically in 7μs. The EN29F512 features 5 | EON 宜揚科技 | | ||
512 Kbit (64K x 8-bit) 5V Flash Memory GENERAL DESCRIPTION The EN29F512 is a 512-Kbit, electrically erasable, read/write non-volatile flash memory. Organized into 64K bytes with 8 bits per byte, the 512K of memory is arranged in four uniform sectors of 16Kbytes each. Any byte can be programmed typically in 7μs. The EN29F512 features 5 | EON 宜揚科技 | | ||
512 Kbit (64K x 8-bit) 5V Flash Memory GENERAL DESCRIPTION The EN29F512 is a 512-Kbit, electrically erasable, read/write non-volatile flash memory. Organized into 64K bytes with 8 bits per byte, the 512K of memory is arranged in four uniform sectors of 16Kbytes each. Any byte can be programmed typically in 7μs. The EN29F512 features 5 | EON 宜揚科技 | | ||
512 Kbit (64K x 8-bit) 5V Flash Memory GENERAL DESCRIPTION The EN29F512 is a 512-Kbit, electrically erasable, read/write non-volatile flash memory. Organized into 64K bytes with 8 bits per byte, the 512K of memory is arranged in four uniform sectors of 16Kbytes each. Any byte can be programmed typically in 7μs. The EN29F512 features 5 | EON 宜揚科技 | | ||
512 Kbit (64K x 8-bit) 5V Flash Memory GENERAL DESCRIPTION The EN29F512 is a 512-Kbit, electrically erasable, read/write non-volatile flash memory. Organized into 64K bytes with 8 bits per byte, the 512K of memory is arranged in four uniform sectors of 16Kbytes each. Any byte can be programmed typically in 7μs. The EN29F512 features 5 | EON 宜揚科技 | | ||
512 Kbit (64K x 8-bit) 5V Flash Memory GENERAL DESCRIPTION The EN29F512 is a 512-Kbit, electrically erasable, read/write non-volatile flash memory. Organized into 64K bytes with 8 bits per byte, the 512K of memory is arranged in four uniform sectors of 16Kbytes each. Any byte can be programmed typically in 7μs. The EN29F512 features 5 | EON 宜揚科技 | | ||
512 Kbit (64K x 8-bit) 5V Flash Memory GENERAL DESCRIPTION The EN29F512 is a 512-Kbit, electrically erasable, read/write non-volatile flash memory. Organized into 64K bytes with 8 bits per byte, the 512K of memory is arranged in four uniform sectors of 16Kbytes each. Any byte can be programmed typically in 7μs. The EN29F512 features 5 | EON 宜揚科技 | | ||
512 Kbit (64K x 8-bit) 5V Flash Memory GENERAL DESCRIPTION The EN29F512 is a 512-Kbit, electrically erasable, read/write non-volatile flash memory. Organized into 64K bytes with 8 bits per byte, the 512K of memory is arranged in four uniform sectors of 16Kbytes each. Any byte can be programmed typically in 7μs. The EN29F512 features 5 | EON 宜揚科技 | | ||
512 Kbit (64K x 8-bit) 5V Flash Memory GENERAL DESCRIPTION The EN29F512 is a 512-Kbit, electrically erasable, read/write non-volatile flash memory. Organized into 64K bytes with 8 bits per byte, the 512K of memory is arranged in four uniform sectors of 16Kbytes each. Any byte can be programmed typically in 7μs. The EN29F512 features 5 | EON 宜揚科技 | | ||
512 Kbit (64K x 8-bit) 5V Flash Memory GENERAL DESCRIPTION The EN29F512 is a 512-Kbit, electrically erasable, read/write non-volatile flash memory. Organized into 64K bytes with 8 bits per byte, the 512K of memory is arranged in four uniform sectors of 16Kbytes each. Any byte can be programmed typically in 7μs. The EN29F512 features 5 | EON 宜揚科技 | | ||
512 Kbit (64K x 8-bit) 5V Flash Memory GENERAL DESCRIPTION The EN29F512 is a 512-Kbit, electrically erasable, read/write non-volatile flash memory. Organized into 64K bytes with 8 bits per byte, the 512K of memory is arranged in four uniform sectors of 16Kbytes each. Any byte can be programmed typically in 7μs. The EN29F512 features 5 | EON 宜揚科技 | | ||
512 Kbit (64K x 8-bit) 5V Flash Memory GENERAL DESCRIPTION The EN29F512 is a 512-Kbit, electrically erasable, read/write non-volatile flash memory. Organized into 64K bytes with 8 bits per byte, the 512K of memory is arranged in four uniform sectors of 16Kbytes each. Any byte can be programmed typically in 7μs. The EN29F512 features 5 | EON 宜揚科技 | | ||
512 Kbit (64K x 8-bit) 5V Flash Memory GENERAL DESCRIPTION The EN29F512 is a 512-Kbit, electrically erasable, read/write non-volatile flash memory. Organized into 64K bytes with 8 bits per byte, the 512K of memory is arranged in four uniform sectors of 16Kbytes each. Any byte can be programmed typically in 7μs. The EN29F512 features 5 | EON 宜揚科技 | | ||
512 Kbit (64K x 8-bit) 5V Flash Memory GENERAL DESCRIPTION The EN29F512 is a 512-Kbit, electrically erasable, read/write non-volatile flash memory. Organized into 64K bytes with 8 bits per byte, the 512K of memory is arranged in four uniform sectors of 16Kbytes each. Any byte can be programmed typically in 7μs. The EN29F512 features 5 | EON 宜揚科技 | | ||
512 Kbit (64K x 8-bit) 5V Flash Memory GENERAL DESCRIPTION The EN29F512 is a 512-Kbit, electrically erasable, read/write non-volatile flash memory. Organized into 64K bytes with 8 bits per byte, the 512K of memory is arranged in four uniform sectors of 16Kbytes each. Any byte can be programmed typically in 7μs. The EN29F512 features 5 | EON 宜揚科技 | | ||
512 Kbit (64K x 8-bit) 5V Flash Memory GENERAL DESCRIPTION The EN29F512 is a 512-Kbit, electrically erasable, read/write non-volatile flash memory. Organized into 64K bytes with 8 bits per byte, the 512K of memory is arranged in four uniform sectors of 16Kbytes each. Any byte can be programmed typically in 7μs. The EN29F512 features 5 | EON 宜揚科技 | | ||
512 Kbit (64K x 8-bit) 5V Flash Memory GENERAL DESCRIPTION The EN29F512 is a 512-Kbit, electrically erasable, read/write non-volatile flash memory. Organized into 64K bytes with 8 bits per byte, the 512K of memory is arranged in four uniform sectors of 16Kbytes each. Any byte can be programmed typically in 7μs. The EN29F512 features 5 | EON 宜揚科技 | | ||
512 Kbit (64K x 8-bit) 5V Flash Memory GENERAL DESCRIPTION The EN29F512 is a 512-Kbit, electrically erasable, read/write non-volatile flash memory. Organized into 64K bytes with 8 bits per byte, the 512K of memory is arranged in four uniform sectors of 16Kbytes each. Any byte can be programmed typically in 7μs. The EN29F512 features 5 | EON 宜揚科技 | | ||
512 Kbit (64K x 8-bit) 5V Flash Memory GENERAL DESCRIPTION The EN29F512 is a 512-Kbit, electrically erasable, read/write non-volatile flash memory. Organized into 64K bytes with 8 bits per byte, the 512K of memory is arranged in four uniform sectors of 16Kbytes each. Any byte can be programmed typically in 7μs. The EN29F512 features 5 | EON 宜揚科技 | | ||
512 Kbit (64K x 8-bit) 5V Flash Memory GENERAL DESCRIPTION The EN29F512 is a 512-Kbit, electrically erasable, read/write non-volatile flash memory. Organized into 64K bytes with 8 bits per byte, the 512K of memory is arranged in four uniform sectors of 16Kbytes each. Any byte can be programmed typically in 7μs. The EN29F512 features 5 | EON 宜揚科技 | | ||
512 Kbit (64K x 8-bit) 5V Flash Memory GENERAL DESCRIPTION The EN29F512 is a 512-Kbit, electrically erasable, read/write non-volatile flash memory. Organized into 64K bytes with 8 bits per byte, the 512K of memory is arranged in four uniform sectors of 16Kbytes each. Any byte can be programmed typically in 7μs. The EN29F512 features 5 | EON 宜揚科技 | | ||
512 Kbit (64K x 8-bit) 5V Flash Memory GENERAL DESCRIPTION The EN29F512 is a 512-Kbit, electrically erasable, read/write non-volatile flash memory. Organized into 64K bytes with 8 bits per byte, the 512K of memory is arranged in four uniform sectors of 16Kbytes each. Any byte can be programmed typically in 7μs. The EN29F512 features 5 | EON 宜揚科技 | | ||
512 Kbit (64K x 8-bit) 5V Flash Memory GENERAL DESCRIPTION The EN29F512 is a 512-Kbit, electrically erasable, read/write non-volatile flash memory. Organized into 64K bytes with 8 bits per byte, the 512K of memory is arranged in four uniform sectors of 16Kbytes each. Any byte can be programmed typically in 7μs. The EN29F512 features 5 | EON 宜揚科技 | | ||
512 Kbit (64K x 8-bit) 5V Flash Memory GENERAL DESCRIPTION The EN29F512 is a 512-Kbit, electrically erasable, read/write non-volatile flash memory. Organized into 64K bytes with 8 bits per byte, the 512K of memory is arranged in four uniform sectors of 16Kbytes each. Any byte can be programmed typically in 7μs. The EN29F512 features 5 | EON 宜揚科技 | | ||
512 Kbit (64K x 8-bit) 5V Flash Memory GENERAL DESCRIPTION The EN29F512 is a 512-Kbit, electrically erasable, read/write non-volatile flash memory. Organized into 64K bytes with 8 bits per byte, the 512K of memory is arranged in four uniform sectors of 16Kbytes each. Any byte can be programmed typically in 7μs. The EN29F512 features 5 | EON 宜揚科技 | | ||
512 Kbit (64K x 8-bit) 5V Flash Memory GENERAL DESCRIPTION The EN29F512 is a 512-Kbit, electrically erasable, read/write non-volatile flash memory. Organized into 64K bytes with 8 bits per byte, the 512K of memory is arranged in four uniform sectors of 16Kbytes each. Any byte can be programmed typically in 7μs. The EN29F512 features 5 | EON 宜揚科技 | | ||
512 Kbit (64K x 8-bit) 5V Flash Memory GENERAL DESCRIPTION The EN29F512 is a 512-Kbit, electrically erasable, read/write non-volatile flash memory. Organized into 64K bytes with 8 bits per byte, the 512K of memory is arranged in four uniform sectors of 16Kbytes each. Any byte can be programmed typically in 7μs. The EN29F512 features 5 | EON 宜揚科技 | | ||
512 Kbit (64K x 8-bit) 5V Flash Memory GENERAL DESCRIPTION The EN29F512 is a 512-Kbit, electrically erasable, read/write non-volatile flash memory. Organized into 64K bytes with 8 bits per byte, the 512K of memory is arranged in four uniform sectors of 16Kbytes each. Any byte can be programmed typically in 7μs. The EN29F512 features 5 | EON 宜揚科技 | | ||
512 Kbit (64K x 8-bit) 5V Flash Memory GENERAL DESCRIPTION The EN29F512 is a 512-Kbit, electrically erasable, read/write non-volatile flash memory. Organized into 64K bytes with 8 bits per byte, the 512K of memory is arranged in four uniform sectors of 16Kbytes each. Any byte can be programmed typically in 7μs. The EN29F512 features 5 | EON 宜揚科技 | | ||
512 Kbit (64K x 8-bit) 5V Flash Memory GENERAL DESCRIPTION The EN29F512 is a 512-Kbit, electrically erasable, read/write non-volatile flash memory. Organized into 64K bytes with 8 bits per byte, the 512K of memory is arranged in four uniform sectors of 16Kbytes each. Any byte can be programmed typically in 7μs. The EN29F512 features 5 | EON 宜揚科技 | | ||
512 Kbit (64K x 8-bit) 5V Flash Memory GENERAL DESCRIPTION The EN29F512 is a 512-Kbit, electrically erasable, read/write non-volatile flash memory. Organized into 64K bytes with 8 bits per byte, the 512K of memory is arranged in four uniform sectors of 16Kbytes each. Any byte can be programmed typically in 7μs. The EN29F512 features 5 | EON 宜揚科技 | | ||
512 Kbit (64K x 8-bit) 5V Flash Memory GENERAL DESCRIPTION The EN29F512 is a 512-Kbit, electrically erasable, read/write non-volatile flash memory. Organized into 64K bytes with 8 bits per byte, the 512K of memory is arranged in four uniform sectors of 16Kbytes each. Any byte can be programmed typically in 7μs. The EN29F512 features 5 | EON 宜揚科技 | | ||
512 Kbit (64K x 8-bit) 5V Flash Memory GENERAL DESCRIPTION The EN29F512 is a 512-Kbit, electrically erasable, read/write non-volatile flash memory. Organized into 64K bytes with 8 bits per byte, the 512K of memory is arranged in four uniform sectors of 16Kbytes each. Any byte can be programmed typically in 7μs. The EN29F512 features 5 | EON 宜揚科技 | | ||
512 Kbit (64K x 8-bit) 5V Flash Memory GENERAL DESCRIPTION The EN29F512 is a 512-Kbit, electrically erasable, read/write non-volatile flash memory. Organized into 64K bytes with 8 bits per byte, the 512K of memory is arranged in four uniform sectors of 16Kbytes each. Any byte can be programmed typically in 7μs. The EN29F512 features 5 | EON 宜揚科技 | | ||
512 Kbit (64K x 8-bit) 5V Flash Memory GENERAL DESCRIPTION The EN29F512 is a 512-Kbit, electrically erasable, read/write non-volatile flash memory. Organized into 64K bytes with 8 bits per byte, the 512K of memory is arranged in four uniform sectors of 16Kbytes each. Any byte can be programmed typically in 7μs. The EN29F512 features 5 | EON 宜揚科技 | | ||
512 Kbit (64K x 8-bit) 5V Flash Memory GENERAL DESCRIPTION The EN29F512 is a 512-Kbit, electrically erasable, read/write non-volatile flash memory. Organized into 64K bytes with 8 bits per byte, the 512K of memory is arranged in four uniform sectors of 16Kbytes each. Any byte can be programmed typically in 7μs. The EN29F512 features 5 | EON 宜揚科技 | | ||
512 Kbit (64K x 8-bit) 5V Flash Memory GENERAL DESCRIPTION The EN29F512 is a 512-Kbit, electrically erasable, read/write non-volatile flash memory. Organized into 64K bytes with 8 bits per byte, the 512K of memory is arranged in four uniform sectors of 16Kbytes each. Any byte can be programmed typically in 7μs. The EN29F512 features 5 | EON 宜揚科技 | | ||
512 Kbit (64K x 8-bit) 5V Flash Memory GENERAL DESCRIPTION The EN29F512 is a 512-Kbit, electrically erasable, read/write non-volatile flash memory. Organized into 64K bytes with 8 bits per byte, the 512K of memory is arranged in four uniform sectors of 16Kbytes each. Any byte can be programmed typically in 7μs. The EN29F512 features 5 | EON 宜揚科技 | | ||
512 Kbit (64K x 8-bit) 5V Flash Memory GENERAL DESCRIPTION The EN29F512 is a 512-Kbit, electrically erasable, read/write non-volatile flash memory. Organized into 64K bytes with 8 bits per byte, the 512K of memory is arranged in four uniform sectors of 16Kbytes each. Any byte can be programmed typically in 7μs. The EN29F512 features 5 | EON 宜揚科技 | | ||
512 Kbit (64K x 8-bit) 5V Flash Memory GENERAL DESCRIPTION The EN29F512 is a 512-Kbit, electrically erasable, read/write non-volatile flash memory. Organized into 64K bytes with 8 bits per byte, the 512K of memory is arranged in four uniform sectors of 16Kbytes each. Any byte can be programmed typically in 7μs. The EN29F512 features 5 | EON 宜揚科技 | | ||
512 Kbit (64K x 8-bit) 5V Flash Memory GENERAL DESCRIPTION The EN29F512 is a 512-Kbit, electrically erasable, read/write non-volatile flash memory. Organized into 64K bytes with 8 bits per byte, the 512K of memory is arranged in four uniform sectors of 16Kbytes each. Any byte can be programmed typically in 7μs. The EN29F512 features 5 | EON 宜揚科技 | | ||
512 Kbit (64K x 8-bit) 5V Flash Memory GENERAL DESCRIPTION The EN29F512 is a 512-Kbit, electrically erasable, read/write non-volatile flash memory. Organized into 64K bytes with 8 bits per byte, the 512K of memory is arranged in four uniform sectors of 16Kbytes each. Any byte can be programmed typically in 7μs. The EN29F512 features 5 | EON 宜揚科技 | | ||
512 Kbit (64K x 8-bit) 5V Flash Memory GENERAL DESCRIPTION The EN29F512 is a 512-Kbit, electrically erasable, read/write non-volatile flash memory. Organized into 64K bytes with 8 bits per byte, the 512K of memory is arranged in four uniform sectors of 16Kbytes each. Any byte can be programmed typically in 7μs. The EN29F512 features 5 | EON 宜揚科技 | | ||
512 Kbit (64K x 8-bit) 5V Flash Memory GENERAL DESCRIPTION The EN29F512 is a 512-Kbit, electrically erasable, read/write non-volatile flash memory. Organized into 64K bytes with 8 bits per byte, the 512K of memory is arranged in four uniform sectors of 16Kbytes each. Any byte can be programmed typically in 7μs. The EN29F512 features 5 | EON 宜揚科技 | | ||
512 Kbit (64K x 8-bit) 5V Flash Memory GENERAL DESCRIPTION The EN29F512 is a 512-Kbit, electrically erasable, read/write non-volatile flash memory. Organized into 64K bytes with 8 bits per byte, the 512K of memory is arranged in four uniform sectors of 16Kbytes each. Any byte can be programmed typically in 7μs. The EN29F512 features 5 | EON 宜揚科技 | | ||
512 Kbit (64K x 8-bit) 5V Flash Memory GENERAL DESCRIPTION The EN29F512 is a 512-Kbit, electrically erasable, read/write non-volatile flash memory. Organized into 64K bytes with 8 bits per byte, the 512K of memory is arranged in four uniform sectors of 16Kbytes each. Any byte can be programmed typically in 7μs. The EN29F512 features 5 | EON 宜揚科技 | | ||
512 Kbit (64K x 8-bit) 5V Flash Memory GENERAL DESCRIPTION The EN29F512 is a 512-Kbit, electrically erasable, read/write non-volatile flash memory. Organized into 64K bytes with 8 bits per byte, the 512K of memory is arranged in four uniform sectors of 16Kbytes each. Any byte can be programmed typically in 7μs. The EN29F512 features 5 | EON 宜揚科技 | | ||
512 Kbit (64K x 8-bit) 5V Flash Memory GENERAL DESCRIPTION The EN29F512 is a 512-Kbit, electrically erasable, read/write non-volatile flash memory. Organized into 64K bytes with 8 bits per byte, the 512K of memory is arranged in four uniform sectors of 16Kbytes each. Any byte can be programmed typically in 7μs. The EN29F512 features 5 | EON 宜揚科技 | | ||
512 Kbit (64K x 8-bit) 5V Flash Memory GENERAL DESCRIPTION The EN29F512 is a 512-Kbit, electrically erasable, read/write non-volatile flash memory. Organized into 64K bytes with 8 bits per byte, the 512K of memory is arranged in four uniform sectors of 16Kbytes each. Any byte can be programmed typically in 7μs. The EN29F512 features 5 | EON 宜揚科技 | |
EN29F512產(chǎn)品屬性
- 類型
描述
- 型號
EN29F512
- 功能描述
512 Kbit(64K x 8-bit) 5V Flash Memory
| IC供應商 | 芯片型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
|---|---|---|---|---|---|---|---|
EON |
24+ |
NA/ |
1000 |
優(yōu)勢代理渠道,原裝正品,可全系列訂貨開增值稅票 |
|||
EON |
2016+ |
PLCC |
3000 |
只做原裝,假一罰十,公司可開17%增值稅發(fā)票! |
|||
EON |
24+ |
PLCC |
6000 |
全新原裝正品現(xiàn)貨 假一賠佰 |
|||
EON |
25+ |
TSOP |
729 |
原裝正品,假一罰十! |
|||
EON |
23+ |
NA |
1000 |
專業(yè)電子元器件供應鏈正邁科技特價代理特價，原裝元器件供應，支持開發(fā)樣品 |
|||
EON/宜揚 |
2450+ |
PLCC |
9850 |
只做原廠原裝正品現(xiàn)貨或訂貨假一賠十! |
|||
EON |
24+/25+ |
438 |
原裝正品現(xiàn)貨庫存價優(yōu) |
||||
EON |
PLCC |
20 |
一級代理,專注軍工、汽車、醫(yī)療、工業(yè)、新能源、電力 |
||||
EON |
21+ |
TSOP |
729 |
原裝現(xiàn)貨假一賠十 |
|||
EON |
25+ |
PLCC |
166 |
百分百原裝正品 真實公司現(xiàn)貨庫存 本公司只做原裝 可 |
EN29F512規(guī)格書下載地址
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進口代理
2023-5-26EN5311QI
製造商: Intel 產(chǎn)品類型: 轉換電壓穩(wěn)壓器 RoHS: 詳細資料 安裝風格: SMD/SMT 封裝/外殼: QFN-20 輸出電壓: 600 mV to 6 V 輸出電流: 1 A 輸出數(shù): 1 Output 最高輸入電壓: 6.6 V 拓撲學: Buck 輸入電壓 最小: 2.4 V 交換頻率: 4 MHz 最低工作溫度: - 40 C 最高工作溫度: + 85 C 系列: EN53xx
2020-10-27EN25QH32B-104HIP
EN25QH32B-104HIP，全新原裝當天發(fā)貨或門市自取0755-82732291.
2019-10-26EN25QH16-104HIP
EN25QH16-104HIP，全新原裝當天發(fā)貨或門市自取0755-82732291.
2019-10-26EN25Q32C-104HIP
EN25Q32C-104HIP，全新原裝當天發(fā)貨或門市自取0755-82732291.
2019-10-26
DdatasheetPDF頁碼索引
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