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型號 功能描述 生產(chǎn)廠家 企業(yè) LOGO 操作
EN29F512-45TC

512 Kbit (64K x 8-bit) 5V Flash Memory

GENERAL DESCRIPTION The EN29F512 is a 512-Kbit, electrically erasable, read/write non-volatile flash memory. Organized into 64K bytes with 8 bits per byte, the 512K of memory is arranged in four uniform sectors of 16Kbytes each. Any byte can be programmed typically in 7μs. The EN29F512 features 5

EON

宜揚(yáng)科技

512 Kbit (64K x 8-bit) 5V Flash Memory

GENERAL DESCRIPTION The EN29F512 is a 512-Kbit, electrically erasable, read/write non-volatile flash memory. Organized into 64K bytes with 8 bits per byte, the 512K of memory is arranged in four uniform sectors of 16Kbytes each. Any byte can be programmed typically in 7μs. The EN29F512 features 5

EON

宜揚(yáng)科技

512 Kbit (64K x 8-bit) 5V Flash Memory

GENERAL DESCRIPTION The EN29F512 is a 512-Kbit, electrically erasable, read/write non-volatile flash memory. Organized into 64K bytes with 8 bits per byte, the 512K of memory is arranged in four uniform sectors of 16Kbytes each. Any byte can be programmed typically in 7μs. The EN29F512 features 5

EON

宜揚(yáng)科技

512 Kbit (64K x 8-bit) 5V Flash Memory

GENERAL DESCRIPTION The EN29F512 is a 512-Kbit, electrically erasable, read/write non-volatile flash memory. Organized into 64K bytes with 8 bits per byte, the 512K of memory is arranged in four uniform sectors of 16Kbytes each. Any byte can be programmed typically in 7μs. The EN29F512 features 5

EON

宜揚(yáng)科技

512 Kbit (64K x 8-bit) 5V Flash Memory

GENERAL DESCRIPTION The EN29F512 is a 512-Kbit, electrically erasable, read/write non-volatile flash memory. Organized into 64K bytes with 8 bits per byte, the 512K of memory is arranged in four uniform sectors of 16Kbytes each. Any byte can be programmed typically in 7μs. The EN29F512 features 5

EON

宜揚(yáng)科技

512 Kbit (64K x 8-bit) 5V Flash Memory

GENERAL DESCRIPTION The EN29F512 is a 512-Kbit, electrically erasable, read/write non-volatile flash memory. Organized into 64K bytes with 8 bits per byte, the 512K of memory is arranged in four uniform sectors of 16Kbytes each. Any byte can be programmed typically in 7μs. The EN29F512 features 5

EON

宜揚(yáng)科技

512 Kbit (64K x 8-bit) 5V Flash Memory

GENERAL DESCRIPTION The EN29F512 is a 512-Kbit, electrically erasable, read/write non-volatile flash memory. Organized into 64K bytes with 8 bits per byte, the 512K of memory is arranged in four uniform sectors of 16Kbytes each. Any byte can be programmed typically in 7μs. The EN29F512 features 5

EON

宜揚(yáng)科技

EN29F512-45TC產(chǎn)品屬性

  • 類型

    描述

  • 型號

    EN29F512-45TC

  • 功能描述

    512 Kbit(64K x 8-bit) 5V Flash Memory

更新時間:2025-9-17 18:20:00
IC供應(yīng)商 芯片型號 品牌 批號 封裝 庫存 備注 價格
EON
24+
PLCC
8762
公司原廠原裝現(xiàn)貨假一罰十!特價出售!強(qiáng)勢庫存!
EON/宜揚(yáng)
2450+
PLCC
9850
只做原廠原裝正品現(xiàn)貨或訂貨假一賠十!
EON
2016+
PLCC
3000
只做原裝,假一罰十,公司可開17%增值稅發(fā)票!
EON
21+
PLCC
103
原裝現(xiàn)貨假一賠十
EON
25+
PLCC
166
百分百原裝正品 真實(shí)公司現(xiàn)貨庫存 本公司只做原裝 可
EON
03+
PLCC
83
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EON
25+
PLCC
1000
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EON
17+
DIP
6200
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24+
NA/
1000
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