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型號：CED1KB15RH 品牌：Russell 備注：這里有CED多少錢，2025年最近7天走勢，今日出價，今日競價，CED批發(fā)/采購報價，CED行情走勢銷售排行榜，CED報價。

型號	功能描述	生產(chǎn)廠家&企業(yè)
CED01N6	N-Channel Enhancement Mode Field Effect Transistor FEATURES ■650V,0.9A,RDS(ON)=15?@VGS=10V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-251&TO-252package.	CETChino-Excel Technology 華瑞華瑞股份有限公司
CED01N65	N-Channel Enhancement Mode Field Effect Transistor FEATURES ■650V,1.2A,RDS(ON)=10.5Ω@VGS=10V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-251&TO-252package.	CETChino-Excel Technology 華瑞華瑞股份有限公司
CED01N65A	N-Channel Enhancement Mode Field Effect Transistor FEATURES ■650V,0.9A,RDS(ON)=15Ω@VGS=10V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-251&TO-252package.	CETChino-Excel Technology 華瑞華瑞股份有限公司
CED01N65A	N-Channel Enhancement Mode Field Effect Transistor FEATURES 650V,0.9A,RDS(ON)=15W@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-251&TO-252package. Leadfreeproductisacquired.	CET-MOSCET-MOS Technology Corp. 華瑞華瑞功率電子股份有限公司
CED01N6A	N-Channel Enhancement Mode Field Effect Transistor FEATURES 600V,1.1A,RDS(ON)=12W@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-251&TO-252package. RoHScompliant.	CET-MOSCET-MOS Technology Corp. 華瑞華瑞功率電子股份有限公司
CED01N6G	N-Channel Enhancement Mode Field Effect Transistor FEATURES ■600V,1A,RDS(ON)=9.3Ω@VGS=10V. ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-251&TO-252package.	CETChino-Excel Technology 華瑞華瑞股份有限公司
CED01N7	N-Channel Enhancement Mode Field Effect Transistor FEATURES ■700V,0.8A,RDS(ON)=18Ω@VGS=10V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-251&TO-252package.	CETChino-Excel Technology 華瑞華瑞股份有限公司
CED01N7	N-Channel Enhancement Mode Field Effect Transistor FEATURES 700V,0.8A,RDS(ON)=18W@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-251&TO-252package. Leadfreeproductisacquired.	CET-MOSCET-MOS Technology Corp. 華瑞華瑞功率電子股份有限公司
CED02N6	N-Channel Logic Level Enhancement Mode Field Effect Transistor FEATURES ●600V,1.9A,RDS(ON)=5?@VGS=10V. ●SuperhighdensecelldesignforextremelylowRDS(ON). ●Highpowerandcurrenthandlingcapability. ●TO-251&TO-252package.	CETChino-Excel Technology 華瑞華瑞股份有限公司
CED02N65A	N-Channel Enhancement Mode Field Effect Transistor FEATURES 650V,1.2A,RDS(ON)=10.5W@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-251&TO-252package. RoHScompliant.	CET-MOSCET-MOS Technology Corp. 華瑞華瑞功率電子股份有限公司
CED02N6A	N-Channel Enhancement Mode Field Effect Transistor FEATURES ■650V,1.3A,RDS(ON)=8?@VGS=10V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-251&TO-252package.	CETChino-Excel Technology 華瑞華瑞股份有限公司
CED02N6A	N-Channel Enhancement Mode Field Effect Transistor FEATURES 600V,1.3A,RDS(ON)=8.5W@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-251&TO-252package. Leadfreeproductisacquired.	CET-MOSCET-MOS Technology Corp. 華瑞華瑞功率電子股份有限公司
CED02N6G	N-Channel Enhancement Mode Field Effect Transistor FEATURES ■600V,2A,RDS(ON)=5Ω@VGS=10V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-251&TO-252package.	CETChino-Excel Technology 華瑞華瑞股份有限公司
CED02N6G	N-Channel Enhancement Mode Field Effect Transistor FEATURES 600V,2A,RDS(ON)=5W@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-251&TO-252package. Leadfreeproductisacquired.	CET-MOSCET-MOS Technology Corp. 華瑞華瑞功率電子股份有限公司
CED02N7	N-Channel Enhancement Mode Field Effect Transistor FEATURES ■700V,1.6A,RDS(ON)=6.6?@VGS=10V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-251&TO-252package.	CETChino-Excel Technology 華瑞華瑞股份有限公司
CED02N7G	N-Channel Enhancement Mode Field Effect Transistor FEATURES ■700V,1.6A,RDS(ON)=6.75Ω@VGS=10V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-251&TO-252package.	CETChino-Excel Technology 華瑞華瑞股份有限公司
CED02N7G	N-Channel Enhancement Mode Field Effect Transistor FEATURES 700V,1.6A,RDS(ON)=6.75W@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-251&TO-252package. Leadfreeproductisacquired.	CET-MOSCET-MOS Technology Corp. 華瑞華瑞功率電子股份有限公司
CED02N7G-1	N-Channel Enhancement Mode Field Effect Transistor FEATURES 720V,1.6A,RDS(ON)=6.75W@VGS=10V. 750V@Tc=150C SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-251&TO-252package. Leadfreeproductisacquired.	CET-MOSCET-MOS Technology Corp. 華瑞華瑞功率電子股份有限公司
CED02N9	N-Channel Enhancement Mode Field Effect Transistor FEATURES 900V,2A,RDS(ON)=6.8W@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-251&TO-252package. RoHScompliant.	CET-MOSCET-MOS Technology Corp. 華瑞華瑞功率電子股份有限公司
CED03N100	N-Channel Enhancement Mode Field Effect Transistor FEATURES 1000V,3A,RDS(ON)=6W@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-251&TO-252package. Pb-freeleadplating;RoHScompliant. HalogenFree.	CET-MOSCET-MOS Technology Corp. 華瑞華瑞功率電子股份有限公司
CED03N8	N-Channel Enhancement Mode Field Effect Transistor FEATURES 800V,2.5A,RDS(ON)=4.8W@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-251&TO-252package. RoHScompliant.	CET-MOSCET-MOS Technology Corp. 華瑞華瑞功率電子股份有限公司
CED04N6	N-Channel Enhancement Mode Field Effect Transistor FEATURES 600V,3.4A,RDS(ON)=2.4W@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-251&TO-252package. RoHScompliant.	CET-MOSCET-MOS Technology Corp. 華瑞華瑞功率電子股份有限公司
CED04N65	N-Channel Enhancement Mode Field Effect Transistor FEATURES 650V,3.2A,RDS(ON)=2.8W@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-251&TO-252package. Lead-freeplating;RoHScompliant.	CET-MOSCET-MOS Technology Corp. 華瑞華瑞功率電子股份有限公司
CED04N65A	N-Channel Enhancement Mode Field Effect Transistor FEATURES 700V@TJmax,3.1A,RDS(ON)=2.8W@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-251&TO-252package. Pb-freeleadplating;RoHScompliant. HalogenFree.	CET-MOSCET-MOS Technology Corp. 華瑞華瑞功率電子股份有限公司
CED04N7G	N-Channel Enhancement Mode Field Effect Transistor FEATURES ■700V,3.5A,RDS(ON)=3.3Ω@VGS=10V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-251&TO-252package.	CETChino-Excel Technology 華瑞華瑞股份有限公司
CED04N7G	N-Channel Enhancement Mode Field Effect Transistor FEATURES 700V,3.5A,RDS(ON)=3.3W@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-251&TO-252package. Leadfreeproductisacquired.	CET-MOSCET-MOS Technology Corp. 華瑞華瑞功率電子股份有限公司
CED05N65	N-Channel Enhancement Mode Field Effect Transistor FEATURES ■650V,4A,RDS(ON)=2.4Ω@VGS=10V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Lead-freeplating;RoHScompliant. ■TO-251&TO-252package.	CETChino-Excel Technology 華瑞華瑞股份有限公司
CED05N65	N-Channel Enhancement Mode Field Effect Transistor FEATURES 650V,4A,RDS(ON)=2.4W@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-251&TO-252package. Lead-freeplating;RoHScompliant.	CET-MOSCET-MOS Technology Corp. 華瑞華瑞功率電子股份有限公司
CED05P03	P-Channel Enhancement Mode Field Effect Transistor FEATURES ■-30V,-15A,RDS(ON)=70m?@VGS=-10V. RDS(ON)=120m?@VGS=-4.5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-251&TO-252package.	CETChino-Excel Technology 華瑞華瑞股份有限公司
CED05P03	P-Channel Enhancement Mode Field Effect Transistor FEATURES -30V,-15A,RDS(ON)=70mW@VGS=-10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-251&TO-252package. RDS(ON)=120mW@VGS=-4.5V. Leadfreeproductisacquired.	CET-MOSCET-MOS Technology Corp. 華瑞華瑞功率電子股份有限公司
CED06N7	N-Channel Enhancement Mode Field Effect Transistor FEATURES 700V,5A,RDS(ON)=2W@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-251&TO-252package. RoHScompliant.	CET-MOSCET-MOS Technology Corp. 華瑞華瑞功率電子股份有限公司
CED07N65A	N-Channel Enhancement Mode Field Effect Transistor FEATURES 650V,6A,RDS(ON)=1.45W@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-251&TO-252package. Leadfreeproductisacquired.	CET-MOSCET-MOS Technology Corp. 華瑞華瑞功率電子股份有限公司
CED07N65LN	N-Channel Enhancement Mode Field Effect Transistor FEATURES 650V,5.9A,RDS(ON)=0.65W@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-251&TO-252package. RoHScompliant.	CET-MOSCET-MOS Technology Corp. 華瑞華瑞功率電子股份有限公司
CED07N65SA	N-Channel Enhancement Mode Field Effect Transistor FEATURES 650V,6.2A,RDS(ON)=0.65W@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-251&TO-252package. RoHScompliant.	CET-MOSCET-MOS Technology Corp. 華瑞華瑞功率電子股份有限公司
CED08N6A	N-Channel Enhancement Mode Field Effect Transistor FEATURES 600V,6.2A,RDS(ON)=1.25W@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-251&TO-252package. Lead-freeplating;RoHScompliant.	CET-MOSCET-MOS Technology Corp. 華瑞華瑞功率電子股份有限公司
CED1010AL	N-Channel Enhancement Mode Field Effect Transistor FEATURES 100V,63A,RDS(ON)=9.8mW@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-251&TO-252package. RoHScompliant RDS(ON)=14mW@VGS=4.5V.	CET-MOSCET-MOS Technology Corp. 華瑞華瑞功率電子股份有限公司
CED1010L	N-Channel Enhancement Mode Field Effect Transistor FEATURES 100V,63A,RDS(ON)=9.8mW@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-251&TO-252package. RoHScompliant RDS(ON)=13mW@VGS=4.5V.	CET-MOSCET-MOS Technology Corp. 華瑞華瑞功率電子股份有限公司
CED1012	N-Channel Enhancement Mode Field Effect Transistor FEATURES ■120V,10A,RDS(ON)=120mΩ@VGS=10V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-251&TO-252package.	CETChino-Excel Technology 華瑞華瑞股份有限公司
CED1012L	N-Channel Enhancement Mode Field Effect Transistor FEATURES ■120V,10A,RDS(ON)=120mΩ@VGS=5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-251&TO-252package.	CETChino-Excel Technology 華瑞華瑞股份有限公司
CED10P10	P-Channel Enhancement Mode Field Effect Transistor FEATURES ■-100V,-8A,RDS(ON)=350mΩ@VGS=-10V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-251&TO-252package.	CETChino-Excel Technology 華瑞華瑞股份有限公司
CED110P03	P-Channel Enhancement Mode Field Effect Transistor FEATURES -30V,-92A,RDS(ON)=6.0mW@VGS=-10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-251&TO-252package. RDS(ON)=9.0mW@VGS=-4.5V. RoHScompliant.	CET-MOSCET-MOS Technology Corp. 華瑞華瑞功率電子股份有限公司
CED1185	N-Channel Enhancement Mode Field Effect Transistor FEATURES 800V,3.4A,RDS(ON)=2.9W@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-251&TO-252package. Lead-freeplating;RoHScompliant.	CET-MOSCET-MOS Technology Corp. 華瑞華瑞功率電子股份有限公司
CED1188SA	N-Channel Enhancement Mode Field Effect Transistor FEATURES 800V,6.8A,RDS(ON)=0.72W@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-251&TO-252package. RoHScompliant.	CET-MOSCET-MOS Technology Corp. 華瑞華瑞功率電子股份有限公司
CED11N65S	N-Channel Enhancement Mode Field Effect Transistor FEATURES 650V,8A,RDS(ON)=0.42W@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-251&TO-252package. RoHScompliant.	CET-MOSCET-MOS Technology Corp. 華瑞華瑞功率電子股份有限公司
CED11P10	P-Channel Enhancement Mode Field Effect Transistor FEATURES -100V,-7A,RDS(ON)=270mW@VGS=-10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-251&TO-252package. RoHScompliant.	CET-MOSCET-MOS Technology Corp. 華瑞華瑞功率電子股份有限公司
CED11P20	P-Channel Enhancement Mode Field Effect Transistor FEATURES -200V,-10.5A,RDS(ON)=0.36W@VGS=-10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-251&TO-252package. RoHScompliant. ComparabletoAEC-Q101.	CET-MOSCET-MOS Technology Corp. 華瑞華瑞功率電子股份有限公司
CED1210	N-Channel Enhancement Mode Field Effect Transistor FEATURES 100V,62A,RDS(ON)=12mW@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-251&TO-252package. RoHScompliant. RDS(ON)=15mW@VGS=4.5V.	CET-MOSCET-MOS Technology Corp. 華瑞華瑞功率電子股份有限公司
CED1210A	N-Channel Enhancement Mode Field Effect Transistor FEATURES 100V,53A,RDS(ON)=12mW@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-251&TO-252package. RoHScompliant.	CET-MOSCET-MOS Technology Corp. 華瑞華瑞功率電子股份有限公司
CED12N10	N-Channel Enhancement Mode Field Effect Transistor FEATURES ■100V,11A,RDS(ON)=180mΩ@VGS=10V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-251&TO-252package.	CETChino-Excel Technology 華瑞華瑞股份有限公司
CED12N10	N-Channel 100 V (D-S) MOSFET FEATURES ?DT-TrenchPowerMOSFET ?175°CJunctionTemperature ?100RgTested APPLICATIONS ?PrimarySideSwitch	VBSEMIVBsemi Electronics Co.,Ltd 微碧半導(dǎo)體微碧半導(dǎo)體（臺灣）有限公司
CED12N10	N-Channel Enhancement Mode Field Effect Transistor FEATURES 100V,11A,RDS(ON)=180mW@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-251&TO-252package. Leadfreeproductisacquired.	CET-MOSCET-MOS Technology Corp. 華瑞華瑞功率電子股份有限公司
CED12N10L	N-Channel Enhancement Mode Field Effect Transistor FEATURES ■100V,11A,RDS(ON)=175mΩ@VGS=10V. RDS(ON)=185mΩ@VGS=5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-251&TO-252package.	CETChino-Excel Technology 華瑞華瑞股份有限公司
CED12N10L	N-Channel 100 V (D-S) MOSFET FEATURES ?DT-TrenchPowerMOSFET ?175°CJunctionTemperature ?100RgTested APPLICATIONS ?PrimarySideSwitch	VBSEMIVBsemi Electronics Co.,Ltd 微碧半導(dǎo)體微碧半導(dǎo)體（臺灣）有限公司
CED12N10L	N-Channel Enhancement Mode Field Effect Transistor FEATURES 100V,11A,RDS(ON)=175mW@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-251&TO-252package. RoHScompliant. RDS(ON)=185mW@VGS=5V.	CET-MOSCET-MOS Technology Corp. 華瑞華瑞功率電子股份有限公司
CED12P10	P-Channel Enhancement Mode Field Effect Transistor FEATURES ■-100V,-9A,RDS(ON)=315m?@VGS=-10V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-251&TO-252package.	CETChino-Excel Technology 華瑞華瑞股份有限公司
CED12P10	P-Channel Enhancement Mode Field Effect Transistor FEATURES -100V,-9A,RDS(ON)=315mW@VGS=-10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-251&TO-252package. Leadfreeproductisacquired.	CET-MOSCET-MOS Technology Corp. 華瑞華瑞功率電子股份有限公司
CED12P15	P-Channel Enhancement Mode Field Effect Transistor FEATURES -150V,-12A,RDS(ON)=0.24W@VGS=-10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-251&TO-252package. RoHScompliant.	CET-MOSCET-MOS Technology Corp. 華瑞華瑞功率電子股份有限公司
CED1310S	N-Channel Enhancement Mode Field Effect Transistor FEATURES 100V,74A,RDS(ON)=8mW@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-251&TO-252package. RoHScompliant	CET-MOSCET-MOS Technology Corp. 華瑞華瑞功率電子股份有限公司
CED1310SL	N-Channel Enhancement Mode Field Effect Transistor FEATURES 100V,76A,RDS(ON)=8mW@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-251&TO-252package. RoHScompliant. RDS(ON)=11.5mW@VGS=4.5V.	CET-MOSCET-MOS Technology Corp. 華瑞華瑞功率電子股份有限公司
CED13N65S	N-Channel Enhancement Mode Field Effect Transistor FEATURES 700V@TJmax,12.3A,RDS(ON)=0.32W@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-251&TO-252package. RoHScompliant.	CET-MOSCET-MOS Technology Corp. 華瑞華瑞功率電子股份有限公司

CED產(chǎn)品屬性

類型
描述
型號
CED
制造商
CET
制造商全稱
Chino-Excel Technology
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CED供應(yīng)商更多...

更新時間：2025-7-24 23:00:00

IC供應(yīng)商	芯片型號	品牌	批號	封裝	庫存	備注	價格
深圳市得捷芯城科技有限公司	CED01N65	CET/華瑞	24+	NA/	17250	優(yōu)勢代理渠道,原裝正品,可全系列訂貨開增值稅票	詢價
深圳市科芯源微電子有限公司	CED01N65	CET	25+	TO-251	1100	原裝正品,假一罰十!	詢價
深圳市創(chuàng)新跡電子有限公司	CED01N65	CET/華瑞	2022+	TO-251	30000	進口原裝現(xiàn)貨供應(yīng),原裝假一罰十	詢價
深圳市卓越微芯電子有限公司	CED01N65A	CET	2020+	TO-251	100	百分百原裝正品真實公司現(xiàn)貨庫存本公司只做原裝可	詢價
深圳市振宏微科技有限公司	CED01N65	CET	23+	TO-251	28000	原裝正品	詢價
深圳誠思涵科技有限公司	CED01N65	恩XP	24+	SSOP16	15000	公司現(xiàn)貨庫存,支持實單	詢價
深圳市坤融電子科技有限公司	CED01N65	CET/華瑞	24+	TO-251	17250	只做原廠渠道可追溯貨源	詢價
深圳市華來深電子有限公司	CED01N65	CET	23+	TO-251	8560	受權(quán)代理!全新原裝現(xiàn)貨特價熱賣!	詢價
齊創(chuàng)科技(上海,北京,青島)有限公司	CED01N6G	SR	23+	IPAK	5000	原裝正品,假一罰十	詢價
深圳市威雅利發(fā)展有限公司	CED01N65	CET/華瑞	07+	TO-251	10000	一級代理,專注軍工、汽車、醫(yī)療、工業(yè)、新能源、電力	詢價

CED芯片相關(guān)品牌

CED規(guī)格書下載地址

CED參數(shù)引腳圖相關(guān)

d402
d325
d2007
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c波段
cw7805
cs5532
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cpld
cp10
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cob
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cmos
cm2006
cicret
CED3423
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CED1KVB11RH
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CEBR22035/TA3.5MM
CEBR220025
CEBR100035/TA
CEBR100025/TA
CEBR100025(12X16)
CEBNP
CEBM4750
CEBM4725
CEBM4716
CEBM4706.3
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CEBM470035/CR4MM
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CEBLZ44
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CEBF640
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CEB9N25
CEB93A3
CEB85A3
CEB84A4

CED數(shù)據(jù)表相關(guān)新聞

CDT3345
CDT3345
2023-5-10
CE6232
CE6232，全新.當(dāng)天發(fā)貨或門市自取，如需了解更多產(chǎn)品信息聯(lián)系我們.零七五五.八二七三二二九一企鵝:一一七四零五二三五三，V:八七六八零五五八.
2021-8-17
CEM-1212C
CEM-1212C
2021-8-3
CEM-1205C
CEM-1205C KBS-13DB-4P-2 PKM17EPPH4001-BO 7BB-27-4C PKM17EWH4000 7BB-20-3CL0 7BB-27-3R5 7BB-35-3CL0 7BB-50M-1 PKM24SP-3805 1.30.078.001/0100 1.30.249.002/0000 MSS300R AST1240MLQ MSE14LSU2 PK-27A35WQ PK-27N36WQ PT-1540PQ PT-4175WQ SC250M SW360308-1 SW380408-1 SW230704-1 SW390608
2021-4-27
CEM9435
CEM9435，全新原裝當(dāng)天發(fā)貨或門市自取0755-82732291.
2019-12-2
CE01系列CE01-22BS-DS原裝現(xiàn)貨
深圳市大唐盛世半導(dǎo)體有限公司手機：17727572380。電話：0755-83226739QQ:626839837。微信號：15096137729
2019-11-25

DdatasheetPDF頁碼索引

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CED價格

CED產(chǎn)品屬性

CED芯片相關(guān)品牌

CED規(guī)格書下載地址

CED參數(shù)引腳圖相關(guān)

CED數(shù)據(jù)表相關(guān)新聞

DdatasheetPDF頁碼索引

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