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型號(hào) 功能描述 生產(chǎn)廠家&企業(yè) LOGO 操作
CED02N6

N-Channel Logic Level Enhancement Mode Field Effect Transistor

FEATURES ● 600V , 1.9A , RDS(ON)=5? @VGS=10V. ● Super high dense cell design for extremely low RDS(ON). ● High power and current handling capability. ● TO-251 & TO-252 package.

CET

華瑞

N-Channel Enhancement Mode Field Effect Transistor

FEATURES 650V, 1.2A, RDS(ON) = 10.5W @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. TO-251 & TO-252 package. RoHS compliant.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

N-Channel Enhancement Mode Field Effect Transistor

FEATURES 600V, 1.3A, RDS(ON) = 8.5W @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. TO-251 & TO-252 package. Lead free product is acquired.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

N-Channel Enhancement Mode Field Effect Transistor

FEATURES ■ 650V, 1.3A, RDS(ON) = 8 ? @VGS = 10V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ Lead free product is acquired. ■ TO-251 & TO-252 package.

CET

華瑞

N-Channel Enhancement Mode Field Effect Transistor

FEATURES 600V, 2A, RDS(ON) = 5W @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. TO-251 & TO-252 package. Lead free product is acquired.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

N-Channel Enhancement Mode Field Effect Transistor

FEATURES ■ 600V, 2A, RDS(ON) = 5Ω @VGS = 10V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ Lead free product is acquired. ■ TO-251 & TO-252 package.

CET

華瑞

Single-Ended Cordsets

Basic features Approval/Conformity CE EAC WEEE

Balluff

巴魯夫

Inductive Sensors

BES M08EH1-PSC20B-S04G-S01 Basic features Additional features Housing resistant to weld spatter Approval/Conformity CE UKCA cULus WEEE Basic standard IEC 60947-5-2

Balluff

巴魯夫

N-CHANNEL LOGIC LEVEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

FEATURES ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ Lead free product is acquired. ???????■ TO-220 & TO-263 & TO-262 package & TO-220F full-pak for through hole.

CET

華瑞

N-Channel Enhancement Mode Field Effect Transistor

N-Channel Enhancement Mode Field Effect Transistor FEATURES Super high dense cell design for extremely low RDS(ON). High power and current handing capability. TO-220 & TO-263 & TO-262 package & TO-220F full-pak for through hole. Lead free product is acquired.

CET

華瑞

N-Channel Enhancement Mode Field Effect Transistor

文件：132.65 Kbytes Page：4 Pages

CET

華瑞

CED02N6產(chǎn)品屬性

  • 類型

    描述

  • 型號(hào)

    CED02N6

  • 制造商

    CET

  • 制造商全稱

    Chino-Excel Technology

  • 功能描述

    N-Channel Logic Level Enhancement Mode Field Effect Transistor

更新時(shí)間：2025-8-13 15:03:00
IC供應(yīng)商 芯片型號(hào) 品牌 批號(hào) 封裝 庫(kù)存 備注 價(jià)格
CET
25+
TO-251
5992
原裝正品,假一罰十!
CET
23+
原廠原包
19960
只做進(jìn)口原裝 終端工廠免費(fèi)送樣
CET
23+
TO-251
7300
專注配單,只做原裝進(jìn)口現(xiàn)貨
CET
23+
TO-251
7300
專注配單,只做原裝進(jìn)口現(xiàn)貨
VBsemi
23+
TO-251
8560
受權(quán)代理!全新原裝現(xiàn)貨特價(jià)熱賣!
CET
24+
TO251
278
VBsemi/臺(tái)灣微碧
21+
TO-251
5011
原裝現(xiàn)貨假一賠十
CET/華瑞
23+
TO251
38888
原廠授權(quán)一級(jí)代理,專業(yè)海外優(yōu)勢(shì)訂貨,價(jià)格優(yōu)勢(shì)、品種
CET
23+
TO251
7000
絕對(duì)全新原裝!100%保質(zhì)量特價(jià)!請(qǐng)放心訂購(gòu)!
C
22+
TO-251
6000
十年配單,只做原裝

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