国产精品久久久久无码av色戒,大帝av在线一区二区三区,国产肥熟女视频一区二区三区,大陆少妇xxxx做受,被黑人猛躁10次高潮视频

120W L-Band Radar GaN Power Transistor and Pallet Amplifier

Key Features The following are the key features of the 1214GN-120E/EL/EP E-Series Earless/Eared GaN transistor products: ? 1200–1400 MHz, 120 W pulsed output power, 300 μS 10 pulsing ? Common source, Class AB, 50 V bias voltage ? High efficiency: >60 typical across the frequency band ? Extrem

RF/Microwave GaN on SiC Power Devices, Pallets and Modules

120W L-Band Radar GaN Power Transistor and Pallet Amplifier

Key Features The following are the key features of the 1214GN-120E/EL/EP E-Series Earless/Eared GaN transistor products: ? 1200–1400 MHz, 120 W pulsed output power, 300 μS 10 pulsing ? Common source, Class AB, 50 V bias voltage ? High efficiency: >60 typical across the frequency band ? Extrem

120W L-Band Radar GaN Power Transistor and Pallet Amplifier

Key Features The following are the key features of the 1214GN-120E/EL/EP E-Series Earless/Eared GaN transistor products: ? 1200–1400 MHz, 120 W pulsed output power, 300 μS 10 pulsing ? Common source, Class AB, 50 V bias voltage ? High efficiency: >60 typical across the frequency band ? Extrem