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120W L-Band Radar GaN Power Transistor and Pallet Amplifier

Key Features The following are the key features of the 1214GN-120E/EL/EP E-Series Earless/Eared GaN transistor products: ? 1200–1400 MHz, 120 W pulsed output power, 300 μS 10 pulsing ? Common source, Class AB, 50 V bias voltage ? High efficiency: >60 typical across the frequency band ? Extrem

封裝/外殼：55-QQ 包裝：卷帶（TR） 描述：TRAN, GAN, 1200-1400 MHZ, 120W, 分立半導(dǎo)體產(chǎn)品 晶體管 - FET，MOSFET - 射頻

RF/Microwave GaN on SiC Power Devices, Pallets and Modules

120W L-Band Radar GaN Power Transistor and Pallet Amplifier

Key Features The following are the key features of the 1214GN-120E/EL/EP E-Series Earless/Eared GaN transistor products: ? 1200–1400 MHz, 120 W pulsed output power, 300 μS 10 pulsing ? Common source, Class AB, 50 V bias voltage ? High efficiency: >60 typical across the frequency band ? Extrem

120W L-Band Radar GaN Power Transistor and Pallet Amplifier

Key Features The following are the key features of the 1214GN-120E/EL/EP E-Series Earless/Eared GaN transistor products: ? 1200–1400 MHz, 120 W pulsed output power, 300 μS 10 pulsing ? Common source, Class AB, 50 V bias voltage ? High efficiency: >60 typical across the frequency band ? Extrem

RF/Microwave GaN on SiC Power Devices, Pallets and Modules