国产精品久久久久无码av色戒,大帝av在线一区二区三区,国产肥熟女视频一区二区三区,大陆少妇xxxx做受,被黑人猛躁10次高潮视频

型號(hào) 功能描述 生產(chǎn)廠家&企業(yè) LOGO 操作
X28C512J

5V, Byte Alterable EEPROM

The X28C512, X28C513 are 64K x 8 EEPROM, fabricated with Intersil’s proprietary, high performance, floating gate CMOS technology. Like all Intersil programmable nonvolatile memories, the X28C512, X28C513 are 5V only devices. The X28C512, X28C513 feature the JEDEC approved pin out for byte wide mem

Intersil

X28C512J

5V, Byte Alterable EEPROM

文件:848.59 Kbytes Page:21 Pages

RENESAS

瑞薩

5 Volt, Byte Alterable E2PROM

DESCRIPTION The X28C512/513 is an 64K x 8 E2PROM, fabricated with Xicor’s proprietary, high performance, floating gate CMOS technology. Like all Xicor programmable nonvolatile memories the X28C512/513 is a 5V only device. The X28C512/513 features the JEDEC approved pinout for bytewide memories,

Xicor

Xicor Inc.

5V, Byte Alterable EEPROM

The X28C512, X28C513 are 64K x 8 EEPROM, fabricated with Intersil’s proprietary, high performance, floating gate CMOS technology. Like all Intersil programmable nonvolatile memories, the X28C512, X28C513 are 5V only devices. The X28C512, X28C513 feature the JEDEC approved pin out for byte wide mem

Intersil

5 Volt, Byte Alterable E2PROM

DESCRIPTION The X28C512/513 is an 64K x 8 E2PROM, fabricated with Xicor’s proprietary, high performance, floating gate CMOS technology. Like all Xicor programmable nonvolatile memories the X28C512/513 is a 5V only device. The X28C512/513 features the JEDEC approved pinout for bytewide memories,

Xicor

Xicor Inc.

5V, Byte Alterable EEPROM

The X28C512, X28C513 are 64K x 8 EEPROM, fabricated with Intersil’s proprietary, high performance, floating gate CMOS technology. Like all Intersil programmable nonvolatile memories, the X28C512, X28C513 are 5V only devices. The X28C512, X28C513 feature the JEDEC approved pin out for byte wide mem

Intersil

5 Volt, Byte Alterable E2PROM

DESCRIPTION The X28C512/513 is an 64K x 8 E2PROM, fabricated with Xicor’s proprietary, high performance, floating gate CMOS technology. Like all Xicor programmable nonvolatile memories the X28C512/513 is a 5V only device. The X28C512/513 features the JEDEC approved pinout for bytewide memories,

Xicor

Xicor Inc.

5 Volt, Byte Alterable E2PROM

DESCRIPTION The X28C512/513 is an 64K x 8 E2PROM, fabricated with Xicor’s proprietary, high performance, floating gate CMOS technology. Like all Xicor programmable nonvolatile memories the X28C512/513 is a 5V only device. The X28C512/513 features the JEDEC approved pinout for bytewide memories,

Xicor

Xicor Inc.

5 Volt, Byte Alterable E2PROM

DESCRIPTION The X28C512/513 is an 64K x 8 E2PROM, fabricated with Xicor’s proprietary, high performance, floating gate CMOS technology. Like all Xicor programmable nonvolatile memories the X28C512/513 is a 5V only device. The X28C512/513 features the JEDEC approved pinout for bytewide memories,

Xicor

Xicor Inc.

5 Volt, Byte Alterable E2PROM

DESCRIPTION The X28C512/513 is an 64K x 8 E2PROM, fabricated with Xicor’s proprietary, high performance, floating gate CMOS technology. Like all Xicor programmable nonvolatile memories the X28C512/513 is a 5V only device. The X28C512/513 features the JEDEC approved pinout for bytewide memories,

Xicor

Xicor Inc.

5V, Byte Alterable EEPROM

The X28C512, X28C513 are 64K x 8 EEPROM, fabricated with Intersil’s proprietary, high performance, floating gate CMOS technology. Like all Intersil programmable nonvolatile memories, the X28C512, X28C513 are 5V only devices. The X28C512, X28C513 feature the JEDEC approved pin out for byte wide mem

Intersil

5 Volt, Byte Alterable E2PROM

DESCRIPTION The X28C512/513 is an 64K x 8 E2PROM, fabricated with Xicor’s proprietary, high performance, floating gate CMOS technology. Like all Xicor programmable nonvolatile memories the X28C512/513 is a 5V only device. The X28C512/513 features the JEDEC approved pinout for bytewide memories,

Xicor

Xicor Inc.

5V, Byte Alterable EEPROM

The X28C512, X28C513 are 64K x 8 EEPROM, fabricated with Intersil’s proprietary, high performance, floating gate CMOS technology. Like all Intersil programmable nonvolatile memories, the X28C512, X28C513 are 5V only devices. The X28C512, X28C513 feature the JEDEC approved pin out for byte wide mem

Intersil

5 Volt, Byte Alterable E2PROM

DESCRIPTION The X28C512/513 is an 64K x 8 E2PROM, fabricated with Xicor’s proprietary, high performance, floating gate CMOS technology. Like all Xicor programmable nonvolatile memories the X28C512/513 is a 5V only device. The X28C512/513 features the JEDEC approved pinout for bytewide memories,

Xicor

Xicor Inc.

5 Volt, Byte Alterable E2PROM

DESCRIPTION The X28C512/513 is an 64K x 8 E2PROM, fabricated with Xicor’s proprietary, high performance, floating gate CMOS technology. Like all Xicor programmable nonvolatile memories the X28C512/513 is a 5V only device. The X28C512/513 features the JEDEC approved pinout for bytewide memories,

Xicor

Xicor Inc.

5 Volt, Byte Alterable E2PROM

DESCRIPTION The X28C512/513 is an 64K x 8 E2PROM, fabricated with Xicor’s proprietary, high performance, floating gate CMOS technology. Like all Xicor programmable nonvolatile memories the X28C512/513 is a 5V only device. The X28C512/513 features the JEDEC approved pinout for bytewide memories,

Xicor

Xicor Inc.

5V, Byte Alterable EEPROM

The X28C512, X28C513 are 64K x 8 EEPROM, fabricated with Intersil’s proprietary, high performance, floating gate CMOS technology. Like all Intersil programmable nonvolatile memories, the X28C512, X28C513 are 5V only devices. The X28C512, X28C513 feature the JEDEC approved pin out for byte wide mem

Intersil

5V, Byte Alterable EEPROM

The X28C512, X28C513 are 64K x 8 EEPROM, fabricated with Intersil’s proprietary, high performance, floating gate CMOS technology. Like all Intersil programmable nonvolatile memories, the X28C512, X28C513 are 5V only devices. The X28C512, X28C513 feature the JEDEC approved pin out for byte wide mem

Intersil

5 Volt, Byte Alterable E2PROM

DESCRIPTION The X28C512/513 is an 64K x 8 E2PROM, fabricated with Xicor’s proprietary, high performance, floating gate CMOS technology. Like all Xicor programmable nonvolatile memories the X28C512/513 is a 5V only device. The X28C512/513 features the JEDEC approved pinout for bytewide memories,

Xicor

Xicor Inc.

5 Volt, Byte Alterable E2PROM

DESCRIPTION The X28C512/513 is an 64K x 8 E2PROM, fabricated with Xicor’s proprietary, high performance, floating gate CMOS technology. Like all Xicor programmable nonvolatile memories the X28C512/513 is a 5V only device. The X28C512/513 features the JEDEC approved pinout for bytewide memories,

Xicor

Xicor Inc.

5V, Byte Alterable EEPROM

The X28C512, X28C513 are 64K x 8 EEPROM, fabricated with Intersil’s proprietary, high performance, floating gate CMOS technology. Like all Intersil programmable nonvolatile memories, the X28C512, X28C513 are 5V only devices. The X28C512, X28C513 feature the JEDEC approved pin out for byte wide mem

Intersil

5V, Byte Alterable EEPROM

The X28C512, X28C513 are 64K x 8 EEPROM, fabricated with Intersil’s proprietary, high performance, floating gate CMOS technology. Like all Intersil programmable nonvolatile memories, the X28C512, X28C513 are 5V only devices. The X28C512, X28C513 feature the JEDEC approved pin out for byte wide mem

Intersil

5 Volt, Byte Alterable E2PROM

DESCRIPTION The X28C512/513 is an 64K x 8 E2PROM, fabricated with Xicor’s proprietary, high performance, floating gate CMOS technology. Like all Xicor programmable nonvolatile memories the X28C512/513 is a 5V only device. The X28C512/513 features the JEDEC approved pinout for bytewide memories,

Xicor

Xicor Inc.

5 Volt, Byte Alterable E2PROM

DESCRIPTION The X28C512/513 is an 64K x 8 E2PROM, fabricated with Xicor’s proprietary, high performance, floating gate CMOS technology. Like all Xicor programmable nonvolatile memories the X28C512/513 is a 5V only device. The X28C512/513 features the JEDEC approved pinout for bytewide memories,

Xicor

Xicor Inc.

5V, Byte Alterable EEPROM

The X28C512, X28C513 are 64K x 8 EEPROM, fabricated with Intersil’s proprietary, high performance, floating gate CMOS technology. Like all Intersil programmable nonvolatile memories, the X28C512, X28C513 are 5V only devices. The X28C512, X28C513 feature the JEDEC approved pin out for byte wide mem

Intersil

5 Volt, Byte Alterable E2PROM

DESCRIPTION The X28C512/513 is an 64K x 8 E2PROM, fabricated with Xicor’s proprietary, high performance, floating gate CMOS technology. Like all Xicor programmable nonvolatile memories the X28C512/513 is a 5V only device. The X28C512/513 features the JEDEC approved pinout for bytewide memories,

Xicor

Xicor Inc.

5 Volt, Byte Alterable E2PROM

DESCRIPTION The X28C512/513 is an 64K x 8 E2PROM, fabricated with Xicor’s proprietary, high performance, floating gate CMOS technology. Like all Xicor programmable nonvolatile memories the X28C512/513 is a 5V only device. The X28C512/513 features the JEDEC approved pinout for bytewide memories,

Xicor

Xicor Inc.

5 Volt, Byte Alterable E2PROM

DESCRIPTION The X28C512/513 is an 64K x 8 E2PROM, fabricated with Xicor’s proprietary, high performance, floating gate CMOS technology. Like all Xicor programmable nonvolatile memories the X28C512/513 is a 5V only device. The X28C512/513 features the JEDEC approved pinout for bytewide memories,

Xicor

Xicor Inc.

5 Volt, Byte Alterable E2PROM

DESCRIPTION The X28C512/513 is an 64K x 8 E2PROM, fabricated with Xicor’s proprietary, high performance, floating gate CMOS technology. Like all Xicor programmable nonvolatile memories the X28C512/513 is a 5V only device. The X28C512/513 features the JEDEC approved pinout for bytewide memories,

Xicor

Xicor Inc.

5 Volt, Byte Alterable E2PROM

DESCRIPTION The X28C512/513 is an 64K x 8 E2PROM, fabricated with Xicor’s proprietary, high performance, floating gate CMOS technology. Like all Xicor programmable nonvolatile memories the X28C512/513 is a 5V only device. The X28C512/513 features the JEDEC approved pinout for bytewide memories,

Xicor

Xicor Inc.

5 Volt, Byte Alterable E2PROM

DESCRIPTION The X28C512/513 is an 64K x 8 E2PROM, fabricated with Xicor’s proprietary, high performance, floating gate CMOS technology. Like all Xicor programmable nonvolatile memories the X28C512/513 is a 5V only device. The X28C512/513 features the JEDEC approved pinout for bytewide memories,

Xicor

Xicor Inc.

5V, Byte Alterable EEPROM

The X28C512, X28C513 are 64K x 8 EEPROM, fabricated with Intersil’s proprietary, high performance, floating gate CMOS technology. Like all Intersil programmable nonvolatile memories, the X28C512, X28C513 are 5V only devices. The X28C512, X28C513 feature the JEDEC approved pin out for byte wide mem

Intersil

5V, Byte Alterable EEPROM

文件:848.59 Kbytes Page:21 Pages

RENESAS

瑞薩

5V, Byte Alterable EEPROM

文件:848.59 Kbytes Page:21 Pages

RENESAS

瑞薩

5V, Byte Alterable EEPROM

文件:465.17 Kbytes Page:21 Pages

Intersil

5V, Byte Alterable EEPROM

文件:848.59 Kbytes Page:21 Pages

RENESAS

瑞薩

5V, Byte Alterable EEPROM

文件:848.59 Kbytes Page:21 Pages

RENESAS

瑞薩

5V, Byte Alterable EEPROM

文件:465.17 Kbytes Page:21 Pages

Intersil

5V, Byte Alterable EEPROM

文件:848.59 Kbytes Page:21 Pages

RENESAS

瑞薩

封裝/外殼:32-LCC(J 形引線) 包裝:托盤 描述:IC EEPROM 512KBIT PAR 32PLCC 集成電路(IC) 存儲(chǔ)器

ETC

知名廠家

5V, Byte Alterable EEPROM

文件:848.59 Kbytes Page:21 Pages

RENESAS

瑞薩

5V, Byte Alterable EEPROM

文件:465.17 Kbytes Page:21 Pages

Intersil

5V, Byte Alterable EEPROM

文件:848.59 Kbytes Page:21 Pages

RENESAS

瑞薩

5V, Byte Alterable EEPROM

文件:848.59 Kbytes Page:21 Pages

RENESAS

瑞薩

5V, Byte Alterable EEPROM

文件:465.17 Kbytes Page:21 Pages

Intersil

5V, Byte Alterable EEPROM

文件:465.17 Kbytes Page:21 Pages

Intersil

5V, Byte Alterable EEPROM

文件:848.59 Kbytes Page:21 Pages

RENESAS

瑞薩

5V, Byte Alterable EEPROM

文件:848.59 Kbytes Page:21 Pages

RENESAS

瑞薩

5V, Byte Alterable EEPROM

文件:465.17 Kbytes Page:21 Pages

Intersil

5V, Byte Alterable EEPROM

文件:848.59 Kbytes Page:21 Pages

RENESAS

瑞薩

5V, Byte Alterable EEPROM

文件:848.59 Kbytes Page:21 Pages

RENESAS

瑞薩

5V, Byte Alterable EEPROM

文件:465.17 Kbytes Page:21 Pages

Intersil

512K-Bit CMOS PARALLEL EEPROM

DESCRIPTION The CAT28C512/513 is a fast,low power, 5V-only CMOS parallel EEPROM organized as 64K x 8-bits. It requires a simple interface for in-system programming. On-chip address and data latches, self-timed write cycle with auto-clear and VCC power up/down write protection eliminate additional

ONSEMI

安森美半導(dǎo)體

512K-Bit CMOS PARALLEL EEPROM

DESCRIPTION The CAT28C512/513 is a fast,low power, 5V-only CMOS parallel EEPROM organized as 64K x 8-bits. It requires a simple interface for in-system programming. On-chip address and data latches, self-timed write cycle with auto-clear and VCC power up/down write protection eliminate additional

ONSEMI

安森美半導(dǎo)體

512K-Bit CMOS PARALLEL E2PROM

DESCRIPTION The CAT28C512/513 is a fast,low power, 5V-only CMOS parallel E2PROM organized as 64K x 8-bits. It requires a simple interface for in-system programming. On-chip address and data latches, self-timed write cycle with auto-clear and VCC power up/down write protection eliminate additional

Catalyst

Catalyst Semiconductor

512K-Bit CMOS PARALLEL EEPROM

文件:416.24 Kbytes Page:12 Pages

Catalyst

Catalyst Semiconductor

512K-Bit CMOS PARALLEL EEPROM

文件:81.26 Kbytes Page:11 Pages

Catalyst

Catalyst Semiconductor

X28C512J產(chǎn)品屬性

  • 類型

    描述

  • 型號(hào)

    X28C512J

  • 制造商

    INTERSIL

  • 制造商全稱

    Intersil Corporation

  • 功能描述

    5V, Byte Alterable EEPROM

更新時(shí)間:2025-8-21 23:01:00
IC供應(yīng)商 芯片型號(hào) 品牌 批號(hào) 封裝 庫(kù)存 備注 價(jià)格
INTERSIL
24+
NA/
4184
原廠直銷,現(xiàn)貨供應(yīng),賬期支持!
XICOR
24+
PLCC32
8000
只做自己庫(kù)存 全新原裝進(jìn)口正品假一賠百 可開13%增
XICOR
1738+
PLCC-32
8529
科恒偉業(yè)!只做原裝正品,假一賠十!
Intersil
23+
32-PLCC
9550
專業(yè)分銷產(chǎn)品!原裝正品!價(jià)格優(yōu)勢(shì)!
XICOR
25+
PLCC32
4500
全新原裝、誠(chéng)信經(jīng)營(yíng)、公司現(xiàn)貨銷售
瑞薩/英特矽爾
22+
NA
500000
萬(wàn)三科技,秉承原裝,購(gòu)芯無(wú)憂
XICOR
22+
PLCC
12245
現(xiàn)貨,原廠原裝假一罰十!
XICOR
23+
PLCC32
30000
代理全新原裝現(xiàn)貨,價(jià)格優(yōu)勢(shì)
Xicor
2
公司優(yōu)勢(shì)庫(kù)存 熱賣中!!
INFINEON
24+
PLCC
8500
原廠原包原裝公司現(xiàn)貨,假一賠十,低價(jià)出售

X28C512J數(shù)據(jù)表相關(guān)新聞

  • X3C17A1-03WS

    進(jìn)口代理

    2022-7-19
  • X25UFG 全套的高壓二極管

    最新原裝進(jìn)口,質(zhì)量保證,宇集芯一對(duì)一服務(wù)您放心的品質(zhì),急速發(fā)貨,VMI提供世界上最全套的高壓二極管。軸向引線和SMD二極管的范圍從2kV到20kV。所有的晶圓都是在我們的設(shè)備中摻雜、擴(kuò)散和金屬化的。我們提供廣泛的測(cè)試,以確保我們的客戶收到最/高質(zhì)量的二極管。

    2021-5-19
  • X308032768KGB2SC

    屬性 參數(shù)值 商品目錄 圓柱體晶振 頻率公差 ±10ppm 負(fù)載電容值 12.5pF 主頻 32.768KHz 晶振類型 圓柱晶振

    2020-9-17
  • X25020SI-3.0,X25020ST4,X25057MI-1.8,X25057MI-2.7T1,X25057SI-2.7T4

    X25020SI-3.0,X25020ST4,X25057MI-1.8,X25057MI-2.7T1,X25057SI-2.7T4

    2020-3-29
  • X24320P1.8,微處理器控制器,存儲(chǔ)器,運(yùn)放放大器,音頻放大器,傳感器,深圳興中揚(yáng)電子

    X24320P1.8,微處理器控制器,存儲(chǔ)器,運(yùn)放放大器,音頻放大器,傳感器,深圳興中揚(yáng)電子

    2019-12-2
  • X3100V28-3或4芯鋰離子電池保護(hù)和監(jiān)控點(diǎn)器集成電路

    X3100是一個(gè)使用電池的保護(hù)和監(jiān)控IC包組成的4個(gè)系列的鋰離子電池細(xì)胞。 X3101是設(shè)計(jì)工作在3個(gè)電池的應(yīng)用。這兩款器件提供內(nèi)部的過充電,過放電,和過電流保護(hù)電路,內(nèi)部一個(gè)內(nèi)部穩(wěn)壓器,EEPROM存儲(chǔ)器,控制外部FET器件的內(nèi)部驅(qū)動(dòng)電路電池充電,放電,電池電壓平衡。過充電,過放電,過電流閾值居住在內(nèi)部EEPROM存儲(chǔ)器寄存器通過使用一個(gè)3MHz的軟件獨(dú)立選擇SPI串行接口。檢測(cè)和時(shí)間延遲可以也可單獨(dú)不同的使用外部電容器。使用了一個(gè)內(nèi)部模擬多路復(fù)用器,X3100或X3101允許電池參數(shù),如電池電壓和電流(使用一個(gè)檢測(cè)電阻器)被監(jiān)視外部由一個(gè)單獨(dú)的微控制器與A / D轉(zhuǎn)換。此微控制器上的軟件實(shí)

    2012-12-29