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型號 功能描述 生產(chǎn)廠家 企業(yè) LOGO 操作
VNV35NV04TR-E

OMNIFET II: fully autoprotected Power MOSFET

Description The VNB35NV04-E, VNP35NV04-E and VNV35NV04-E are monolithic devices designed in STMicroelectronics? VIPower? M0-3 Technology, intended for replacement of standard Power MOSFETs from DC up to 25 kHz applications. Built-in thermal shutdown, linear current limitation and overvoltage cla

STMICROELECTRONICS

意法半導體

VNV35NV04TR-E

封裝/外殼：PowerSO-10 裸露底部焊盤 包裝：卷帶（TR） 描述：IC PWR DRIVER N-CHAN 1:1 PWRSO10 集成電路（IC） 配電開關，負載驅(qū)動器

STMICROELECTRONICS

意法半導體

OMNIFET II FULLY AUTOPROTECTED POWER MOSFET

DESCRIPTION The VNB35NV04, VNP35NV04, VNV35NV04, VNW35NV04 are monolithic devices designed in STMicroelectronics VIPower M0-3 Technology, intended for replacement of standard Power MOSFETS from DC up to 25KHz applications. Built in thermal shutdown, linear current limitation and overvoltage clamp

STMICROELECTRONICS

意法半導體

OMNIFET II: fully autoprotected Power MOSFET

Description The VNB35NV04-E, VNP35NV04-E and VNV35NV04-E are monolithic devices designed in STMicroelectronics? VIPower? M0-3 Technology, intended for replacement of standard Power MOSFETs from DC up to 25 kHz applications. Built-in thermal shutdown, linear current limitation and overvoltage cla

STMICROELECTRONICS

意法半導體

??MNIFET II?? FULLY AUTOPROTECTED POWER MOSFET

Description The VNB35NV04-E, VNP35NV04-E and VNV35NV04-E are monolithic devices designed in STMicroelectronics? VIPower? M0-3 Technology, intended for replacement of standard Power MOSFETs from DC up to 25 kHz applications. Built-in thermal shutdown, linear current limitation and overvoltage cla

STMICROELECTRONICS

意法半導體

OMNIFET II: fully autoprotected Power MOSFET

Description The VNB35NV04-E, VNP35NV04-E and VNV35NV04-E are monolithic devices designed in STMicroelectronics? VIPower? M0-3 Technology, intended for replacement of standard Power MOSFETs from DC up to 25 kHz applications. Built-in thermal shutdown, linear current limitation and overvoltage cla

STMICROELECTRONICS

意法半導體

FULLY AUTOPROTECTED POWER MOSFET

文件：310.77 Kbytes Page：19 Pages

STMICROELECTRONICS

意法半導體

VNV35NV04TR-E產(chǎn)品屬性

  • 類型

    描述

  • 型號

    VNV35NV04TR-E

  • 功能描述

    電源開關 IC - 配電 N-Ch 40V 30A OmniFET

  • RoHS

    否

  • 制造商

    Exar

  • 輸出端數(shù)量

    1

  • 開啟電阻（最大值）

    85 mOhms

  • 開啟時間（最大值）

    400 us

  • 關閉時間（最大值）

    20 us

  • 工作電源電壓

    3.2 V to 6.5 V

  • 最大工作溫度

    + 85 C

  • 安裝風格

    SMD/SMT

  • 封裝/箱體

    SOT-23-5

更新時間：2025-9-19 18:14:00
IC供應商 芯片型號 品牌 批號 封裝 庫存 備注 價格
ST
23+
原廠封裝
13528
振宏微原裝正品,假一罰百
ST
23+
原廠原封
16900
正規(guī)渠道,只有原裝!
ST
25+
原廠原封
16900
原裝，請咨詢
STMicroelectronics
24+
10-PowerSO
66800
原廠授權(quán)一級代理,專注汽車、醫(yī)療、工業(yè)、新能源！
25+23+
原廠原包
23360
絕對原裝正品現(xiàn)貨,全新深圳原裝進口現(xiàn)貨
ST/意法
2450+
HSOP10
9850
只做原廠原裝正品現(xiàn)貨或訂貨假一賠十!
ST
22+
10PowerSO
9000
原廠渠道,現(xiàn)貨配單
ST
2025+
PowerSO-10
16000
原裝優(yōu)勢絕對有貨
STM
24+
80000
ST/意法
2023+
HSOP10
8635
全新原裝正品,優(yōu)勢價格

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VNV35NV04TR-E規(guī)格書下載地址

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