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VNS1NV04D價(jià)格

參考價(jià)格：￥3.7547

型號(hào)：VNS1NV04DP-E 品牌：STMICROELECTRONICS 備注：這里有VNS1NV04D多少錢，2025年最近7天走勢(shì)，今日出價(jià)，今日競(jìng)價(jià)，VNS1NV04D批發(fā)/采購(gòu)報(bào)價(jià)，VNS1NV04D行情走勢(shì)銷售排行榜，VNS1NV04D報(bào)價(jià)。
型號(hào) 功能描述 生產(chǎn)廠家 企業(yè) LOGO 操作
VNS1NV04D

??MNIFET II?? FULLY AUTOPROTECTED POWER MOSFET

DESCRIPTION The VNS1NV04D is a device formed by two monolithic OMNIFET II chips housed in a standard SO-8 package. The OMNIFET II are designed in STMicroelectronics VIPower M0-3 Technology: they are intended for replacement of standard Power MOSFETS from DC up to 50KHz applications. ■ LINEA

STMICROELECTRONICS

意法半導(dǎo)體

VNS1NV04D

??MNIFET II?? FULLY AUTOPROTECTED POWER MOSFET

DESCRIPTION The VNS1NV04D is a device formed by two monolithic OMNIFET II chips housed in a standard SO-8 package. The OMNIFET II are designed in STMicroelectronics VIPower M0-3 Technology: they are intended for replacement of standard Power MOSFETS from DC up to 50KHz applications. ■ LINEA

STMICROELECTRONICS

意法半導(dǎo)體

VNS1NV04D

“OMNIFET II”: FULLY AUTOPROTECTED POWER MOSFET

STMICROELECTRONICS

意法半導(dǎo)體

??MNIFET II?? FULLY AUTOPROTECTED POWER MOSFET

DESCRIPTION The VNS1NV04D is a device formed by two monolithic OMNIFET II chips housed in a standard SO-8 package. The OMNIFET II are designed in STMicroelectronics VIPower M0-3 Technology: they are intended for replacement of standard Power MOSFETS from DC up to 50KHz applications. ■ LINEA

STMICROELECTRONICS

意法半導(dǎo)體

??MNIFET II?? FULLY AUTOPROTECTED POWER MOSFET

DESCRIPTION The VNS1NV04D is a device formed by two monolithic OMNIFET II chips housed in a standard SO-8 package. The OMNIFET II are designed in STMicroelectronics VIPower M0-3 Technology: they are intended for replacement of standard Power MOSFETS from DC up to 50KHz applications. ■ LINEA

STMICROELECTRONICS

意法半導(dǎo)體

OMNIFET II fully autoprotected Power MOSFET

Description The VNS1NV04DP-E is a device formed by two monolithic OMNIFET II chips housed in a standard SO-8 package. The OMNIFET II are designed in STMicroelectronics VIPower? M0-3 technology: they are intended for replacement of standard Power MOSFETs from DC up to 50KHz applications. Built in

STMICROELECTRONICS

意法半導(dǎo)體

OMNIFET II fully autoprotected Power MOSFET

Description The VNS1NV04DP-E is a device formed by two monolithic OMNIFET II chips housed in a standard SO-8 package. The OMNIFET II are designed in STMicroelectronics VIPower? M0-3 technology: they are intended for replacement of standard Power MOSFETs from DC up to 50KHz applications. Built in

STMICROELECTRONICS

意法半導(dǎo)體

OMNIFET II：全自動(dòng)保護(hù)功率MOSFET

STMICROELECTRONICS

意法半導(dǎo)體

封裝/外殼：8-SOIC（0.154"，3.90mm 寬） 包裝：管件 描述：IC PWR DRIVER N-CHANNEL 1:1 8SO 集成電路（IC） 配電開(kāi)關(guān)，負(fù)載驅(qū)動(dòng)器

STMICROELECTRONICS

意法半導(dǎo)體

封裝/外殼：8-SOIC（0.154"，3.90mm 寬） 包裝：卷帶（TR）剪切帶（CT）Digi-Reel? 得捷定制卷帶 描述：IC PWR DRIVER N-CHANNEL 1:1 8SO 集成電路（IC） 配電開(kāi)關(guān)，負(fù)載驅(qū)動(dòng)器

STMICROELECTRONICS

意法半導(dǎo)體

??MNIFET II?? FULLY AUTOPROTECTED POWER MOSFET

Description The VND1NV04, VNN1NV04, VNS1NV04 are monolithic devices designed in STMicroelectronics VIPower M0-3 Technology, intended for replacement of standard Power MOSFETs from DC up to 50 KHz applications. Built in thermal shutdown, linear current limitation and overvoltage clamp protect

STMICROELECTRONICS

意法半導(dǎo)體

for car body applications

Description The L5958 includes 6 linear voltage regulators and a 2 A power switch, working down to 4.5 V battery level. All the voltage regulators can be switched off through the three enable pins. Features ■ L5958 six outputs: – 8.5 V @ 200 mA – 5.0 V @ 300 mA – 3.3 V @ 250 mA

STMICROELECTRONICS

意法半導(dǎo)體

OMNIFET II fully autoprotected Power MOSFET

文件：538.37 Kbytes Page：33 Pages

STMICROELECTRONICS

意法半導(dǎo)體

OMNIFET II fully autoprotected Power MOSFET

文件：538.37 Kbytes Page：33 Pages

STMICROELECTRONICS

意法半導(dǎo)體

OMNIFET II fully autoprotected Power MOSFET

文件：538.37 Kbytes Page：33 Pages

STMICROELECTRONICS

意法半導(dǎo)體

VNS1NV04D產(chǎn)品屬性

  • 類型

    描述

  • 型號(hào)

    VNS1NV04D

  • 功能描述

    MOSFET N-Ch 40V 1.7A Omni

  • RoHS

    否

  • 制造商

    STMicroelectronics

  • 晶體管極性

    N-Channel

  • 汲極/源極擊穿電壓

    650 V

  • 閘/源擊穿電壓

    25 V

  • 漏極連續(xù)電流

    130 A 電阻汲極/源極

  • RDS（導(dǎo)通）

    0.014 Ohms

  • 配置

    Single

  • 安裝風(fēng)格

    Through Hole

  • 封裝/箱體

    Max247

  • 封裝

    Tube

更新時(shí)間：2025-9-18 15:03:00
IC供應(yīng)商 芯片型號(hào) 品牌 批號(hào) 封裝 庫(kù)存 備注 價(jià)格
ST(意法)
24+
SO-8
8148
原廠可訂貨,技術(shù)支持,直接渠道?？珊灡９┖贤?/div>
ST
24+
SOP8
8950
BOM配單專家,發(fā)貨快,價(jià)格低
意法半導(dǎo)體
22+
NA
500000
萬(wàn)三科技,秉承原裝,購(gòu)芯無(wú)憂
ST/意法
24+
SSOP24
50945
只做全新原裝進(jìn)口現(xiàn)貨
STM
25+23+
SOP-8
27129
絕對(duì)原裝正品全新進(jìn)口深圳現(xiàn)貨
ST
23+
SOP
20000
原裝進(jìn)口ICMCUSOCMOS等知名國(guó)內(nèi)外品牌只做原裝全
ST
23+
NA
10000
原裝現(xiàn)貨,實(shí)單價(jià)格可談
ST
25+
SOP8
12576
百分百原裝正品 真實(shí)公司現(xiàn)貨庫(kù)存 本公司只做原裝 可
ST
22+
SOP8
7500
原裝正品，實(shí)單請(qǐng)聯(lián)系
ST/意法
25+
SOP-8
996880
只做原裝,歡迎來(lái)電資詢

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VNS1NV04D規(guī)格書下載地址

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