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位置:LMG5200MOFT.B > LMG5200MOFT.B詳情

LMG5200MOFT.B中文資料

廠家型號(hào)

LMG5200MOFT.B

文件大小

749.63Kbytes

頁(yè)面數(shù)量

29頁(yè)

功能描述

LMG5200 80-V, 10-A GaN Half-Bridge Power Stage

數(shù)據(jù)手冊(cè)

下載地址一下載地址二到原廠下載

生產(chǎn)廠商

TI2

LMG5200MOFT.B數(shù)據(jù)手冊(cè)規(guī)格書PDF詳情

1 Features

1? Integrated 15-mΩ GaN FETs and Driver

? 80-V Continuous, 100-V Pulsed Voltage Rating

? Package Optimized for Easy PCB Layout,

Eliminating Need for Underfill, Creepage, and

Clearance Requirements

? Very Low Common Source Inductance to Ensure

High Slew Rate Switching Without Causing

Excessive Ringing in Hard-Switched Topologies

? Ideal for Isolated and Non-Isolated Applications

? Gate Driver Capable of Up to 10 MHz Switching

? Internal Bootstrap Supply Voltage Clamping to

Prevent GaN FET Overdrive

? Supply Rail Undervoltage Lockout Protection

? Excellent Propagation Delay (29.5 ns Typical) and

Matching (2 ns Typical)

? Low Power Consumption

2 Applications

? Wide VIN Multi-MHz Synchronous Buck

Converters

? Class D Amplifiers for Audio

? 48-V Point-of-Load (POL) Converters for Telecom,

Industrial, and Enterprise Computing

? High Power Density Single- and Three-Phase

Motor Drive

3 Description

The LMG5200 device, an 80-V, 10-A driver plus GaN

half-bridge power stage, provides an integrated

power stage solution using enhancement-mode

Gallium Nitride (GaN) FETs. The device consists of

two 80-V GaN FETs driven by one high-frequency

GaN FET driver in a half-bridge configuration.

GaN FETs provide significant advantages for power

conversion as they have near zero reverse recovery

and very small input capacitance CISS. All the devices

are mounted on a completely bond-wire free package

platform with minimized package parasitic elements.

The LMG5200 device is available in a 6 mm × 8 mm

× 2 mm lead-free package and can be easily

mounted on PCBs.

The TTL logic compatible inputs can withstand input

voltages up to 12 V regardless of the VCC voltage.

The proprietary bootstrap voltage clamping technique

ensures the gate voltages of the enhancement mode

GaN FETs are within a safe operating range.

The device extends advantages of discrete GaN

FETs by offering a more user-friendly interface. It is

an ideal solution for applications requiring highfrequency,

high-efficiency operation in a small form

factor. When used with the TPS53632G controller,

the LMG5200 enables direct conversion from 48-V to

point-of-load voltages (0.5-1.5 V).

更新時(shí)間:2025-9-20 15:01:00
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