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LMG5200MOFR.B中文資料
LMG5200MOFR.B數(shù)據(jù)手冊規(guī)格書PDF詳情
1 Features
1? Integrated 15-mΩ GaN FETs and Driver
? 80-V Continuous, 100-V Pulsed Voltage Rating
? Package Optimized for Easy PCB Layout,
Eliminating Need for Underfill, Creepage, and
Clearance Requirements
? Very Low Common Source Inductance to Ensure
High Slew Rate Switching Without Causing
Excessive Ringing in Hard-Switched Topologies
? Ideal for Isolated and Non-Isolated Applications
? Gate Driver Capable of Up to 10 MHz Switching
? Internal Bootstrap Supply Voltage Clamping to
Prevent GaN FET Overdrive
? Supply Rail Undervoltage Lockout Protection
? Excellent Propagation Delay (29.5 ns Typical) and
Matching (2 ns Typical)
? Low Power Consumption
2 Applications
? Wide VIN Multi-MHz Synchronous Buck
Converters
? Class D Amplifiers for Audio
? 48-V Point-of-Load (POL) Converters for Telecom,
Industrial, and Enterprise Computing
? High Power Density Single- and Three-Phase
Motor Drive
3 Description
The LMG5200 device, an 80-V, 10-A driver plus GaN
half-bridge power stage, provides an integrated
power stage solution using enhancement-mode
Gallium Nitride (GaN) FETs. The device consists of
two 80-V GaN FETs driven by one high-frequency
GaN FET driver in a half-bridge configuration.
GaN FETs provide significant advantages for power
conversion as they have near zero reverse recovery
and very small input capacitance CISS. All the devices
are mounted on a completely bond-wire free package
platform with minimized package parasitic elements.
The LMG5200 device is available in a 6 mm × 8 mm
× 2 mm lead-free package and can be easily
mounted on PCBs.
The TTL logic compatible inputs can withstand input
voltages up to 12 V regardless of the VCC voltage.
The proprietary bootstrap voltage clamping technique
ensures the gate voltages of the enhancement mode
GaN FETs are within a safe operating range.
The device extends advantages of discrete GaN
FETs by offering a more user-friendly interface. It is
an ideal solution for applications requiring highfrequency,
high-efficiency operation in a small form
factor. When used with the TPS53632G controller,
the LMG5200 enables direct conversion from 48-V to
point-of-load voltages (0.5-1.5 V).
供應(yīng)商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
---|---|---|---|---|---|---|---|
TI |
24+ |
SMD |
15600 |
門驅(qū)動器 |
|||
TI/德州儀器 |
23+ |
QFM-9 |
30000 |
原裝現(xiàn)貨,假一賠十. |
|||
Texas Instruments |
24+ |
9-QFM(8x6) |
98500 |
一級代理/放心采購 |
|||
TI/德州儀器 |
23+ |
9-QFM |
3022 |
原裝正品代理渠道價格優(yōu)勢 |
|||
TI |
20+ |
9-QFM |
932 |
就找我吧!--邀您體驗愉快問購元件! |
|||
Texas |
25+ |
25000 |
原廠原包 深圳現(xiàn)貨 主打品牌 假一賠百 可開票! |
||||
TI(德州儀器) |
2021+ |
QFM-9 |
499 |
||||
TI(德州儀器) |
23+ |
NA |
20094 |
正納10年以上分銷經(jīng)驗原裝進口正品做服務(wù)做口碑有支持 |
|||
TI(德州儀器) |
24+/25+ |
10000 |
原裝正品現(xiàn)貨庫存價優(yōu) |
||||
TI/德州儀器 |
23+ |
QFM-9 |
50000 |
全新原裝正品現(xiàn)貨,支持訂貨 |
LMG5200MOFR.B 資料下載更多...
LMG5200MOFR.B 芯片相關(guān)型號
- 48NAVA-41H33-M
- 48NAVA-41H33-M2
- 48NAVA-41H33-M2SLASHQ
- 48NAVA-41H33-MSLASHQ
- 48NAVA-41H33-R
- 48NAVA-41H33-RSLASHQ
- 48NAVA-41H3D-M
- 48NAVA-41H3D-M2
- 48NAVA-41H3D-M2SLASHQ
- 48NAVA-41H3D-MSLASHQ
- 48NAVA-41H3D-R
- 48NAVA-41H3D-RSLASHQ
- HSS22-L520BI2
- LMG5200
- LMG5200MOFR
- LMG5200MOFR.A
- LMG5200MOFT
- LMG5200MOFT.A
- LMG5200MOFT.B
- LMV1032
- LMV1032-06
- LMV1032-15
- LMV1032-25
- SR504
- UCS2G100MPD
- UCS2G150MHD
- UCS2G220MHD
- UCS2G330MHD
- UCS2G470MHD
- UCS2G470MHD6
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