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TGF價格
參考價格：￥72.7915
型號：TGF120K 品牌：FerriShield 備注：這里有TGF多少錢，2025年最近7天走勢，今日出價，今日競價，TGF批發(fā)/采購報價，TGF行情走勢銷售排行榜，TGF報價。| 型號 | 功能描述 | 生產(chǎn)廠家&企業(yè) | LOGO | 操作 |
|---|---|---|---|---|
TGF | 包裝：散裝 描述：BUSS HEAT LIMITER 電路保護 電氣專用保險絲 | ETC 知名廠家 | ETC |   |
Discrete MESFET Description TheTriQuintTGF1350-SCCisasingle-gateGaAsfield-effecttransistor(FET)usedforlow-noiseapplicationsDCto18GHz.Bondpadisgoldplatedforcompatibilitywiththermocompressionandthermosoniccompatibilitywire-bondingprocesses.TheTGF1350-SCCisreadilyassembledusing | TriQuint TriQuint Semiconductor |  | | |
Discrete MESFET Description TheTriQuintTGF1350-SCCisasingle-gateGaAsfield-effecttransistor(FET)usedforlow-noiseapplicationsDCto18GHz.Bondpadisgoldplatedforcompatibilitywiththermocompressionandthermosoniccompatibilitywire-bondingprocesses.TheTGF1350-SCCisreadilyassembledusing | TriQuint TriQuint Semiconductor | | | |
DC-12 GHz Discrete Power pHEMT ProductDescription TheTriQuintTGF2021-01isadiscrete1mmpHEMTwhichoperatesfromDC-12GHz.TheTGF2021-01isdesignedusingTriQuint’sprovenstandard0.35umpowerpHEMTproductionprocess. TheTGF2021-01typicallyprovides>30dBmofsaturatedoutputpowerwithpowergainof11dB.Th | TriQuint TriQuint Semiconductor | | | |
DC - 12 GHz Discrete power pHEMT ProductDescription TheTriQuintTGF2021-02isadiscrete2mmpHEMTwhichoperatesfromDC-12GHz.TheTGF2021-02isdesignedusingTriQuint’sprovenstandard0.35umpowerpHEMTproductionprocess. TheTGF2021-02typicallyprovides>33dBmofsaturatedoutputpowerwithpowergainof11dB.T | TriQuint TriQuint Semiconductor | | | |
DC - 12 GHz Discrete power pHEMT ProductDescription TheTriQuintTGF2021-04isadiscrete4mmpHEMTwhichoperatesfromDC-12GHz.TheTGF2021-04isdesignedusingTriQuint’sprovenstandard0.35umpowerpHEMTproductionprocess. TheTGF2021-04typicallyprovides>36dBmofsaturatedoutputpowerwithpowergainof11dB.Th | TriQuint TriQuint Semiconductor | | | |
DC - 12 GHz Discrete power pHEMT ProductDescription TheTriQuintTGF2021-08isadiscrete8mmpHEMTwhichoperatesfromDC-12GHz.TheTGF2021-08isdesignedusingTriQuint’sprovenstandard0.35umpowerpHEMTproductionprocess. TheTGF2021-08typicallyprovides>39dBmofsaturatedoutputpowerwithpowergainof11dB.The | MACOMTyco Electronics 瑪科姆技術(shù)方案控股有限公司 |  | | |
DC - 20 GHz Discrete power pHEMT ProductDescription TheTriQuintTGF2022-12isadiscrete1.2mmpHEMTwhichoperatesfromDC-20GHz.TheTGF2022-12isdesignedusingTriQuint’sprovenstandard0.35umpowerpHEMTproductionprocess. TheTGF2022-12typicallyprovides>31dBmofsaturatedoutputpowerwithpowergainof13dB. | TriQuint TriQuint Semiconductor | | | |
DC - 20 GHz Discrete power pHEMT ProductDescription TheTriQuintTGF2022-24isadiscrete2.4mmpHEMTwhichoperatesfromDC-20GHz.TheTGF2022-24isdesignedusingTriQuint’sprovenstandard0.35umpowerpHEMTproductionprocess. TheTGF2022-24typicallyprovides>34dBmofsaturatedoutputpowerwithpowergainof13dB. | TriQuint TriQuint Semiconductor | | | |
DC - 20 GHz Discrete power pHEMT ? ProductDescription TheTriQuintTGF2022-48isadiscrete4.8mmpHEMTwhichoperatesfromDC-20GHz.TheTGF2022-48isdesignedusingTriQuint’sprovenstandard0.35umpowerpHEMTproductionprocess. TheTGF2022-48typicallyprovides>37dBmofsaturatedoutputpowerwithpowergainof13d | TriQuint TriQuint Semiconductor | | | |
DC - 20 GHz Discrete power pHEMT ProductDescription TheTriQuintTGF2022-60isadiscrete6.0mmpHEMTwhichoperatesfromDC-20GHz.TheTGF2022-60isdesignedusingTriQuint’sprovenstandard0.35umpowerpHEMTproductionprocess. TheTGF2022-60typicallyprovides>38dBmofsaturatedoutputpowerwithpowergainof12dB. | TriQuint TriQuint Semiconductor | | | |
25 Watt Discrete Power GaN on SiC HEMT ProductFeatures FrequencyRange:DC-18GHz 44.3dBmNominalPSATat6GHz 64.4MaximumPAEat6GHz 17.6dBLinearGainat6GHz Bias:VD=12-32V,IDQ=100-250mA Technology:QGaN25onSiC ChipDimensions:0.82x1.44x0.10mm | QORVOQorvo, Inc 威訊聯(lián)合威訊聯(lián)合半導(dǎo)體(德州)有限公司 |  | | |
DC – 4 GHz, 50 V, 200 W GaN RF Transistor KeyFeatures ?Frequency:DCto4GHz ?OutputPower(P3dB)1:257W ?LinearGain1:18dB ?TypicalPAE3dB 1:67.5 ?OperatingVoltage:50V ?CWandPulsecapable Note1:@3GHzLoadPull | QORVOQorvo, Inc 威訊聯(lián)合威訊聯(lián)合半導(dǎo)體(德州)有限公司 | | | |
DC – 4 GHz, 50 V, 200 W GaN RF Transistor KeyFeatures ?Frequency:DCto4GHz ?OutputPower(P3dB)1:257W ?LinearGain1:18dB ?TypicalPAE3dB 1:67.5 ?OperatingVoltage:50V ?CWandPulsecapable Note1:@3GHzLoadPull | QORVOQorvo, Inc 威訊聯(lián)合威訊聯(lián)合半導(dǎo)體(德州)有限公司 | | | |
DC – 4 GHz, 50 V, 200 W GaN RF Transistor KeyFeatures ?Frequency:DCto4GHz ?OutputPower(P3dB)1:257W ?LinearGain1:18dB ?TypicalPAE3dB 1:67.5 ?OperatingVoltage:50V ?CWandPulsecapable Note1:@3GHzLoadPull | QORVOQorvo, Inc 威訊聯(lián)合威訊聯(lián)合半導(dǎo)體(德州)有限公司 | | | |
4 – 6 GHz, 32 V, 5 W GaN RF Input-Matched Transistor KeyFeatures ?Frequency:4to6GHz ?OutputPower(P3dB)1:6.8W ?LinearGain1:13dB ?TypicalPAE3dB 1:60 ?OperatingVoltage:32V ?CWandPulsecapable | QORVOQorvo, Inc 威訊聯(lián)合威訊聯(lián)合半導(dǎo)體(德州)有限公司 | | | |
4 – 6 GHz, 32 V, 5 W GaN RF Input-Matched Transistor KeyFeatures ?Frequency:4to6GHz ?OutputPower(P3dB)1:6.8W ?LinearGain1:13dB ?TypicalPAE3dB 1:60 ?OperatingVoltage:32V ?CWandPulsecapable | QORVOQorvo, Inc 威訊聯(lián)合威訊聯(lián)合半導(dǎo)體(德州)有限公司 | | | |
4 – 6 GHz, 32 V, 5 W GaN RF Input-Matched Transistor KeyFeatures ?Frequency:4to6GHz ?OutputPower(P3dB)1:6.8W ?LinearGain1:13dB ?TypicalPAE3dB 1:60 ?OperatingVoltage:32V ?CWandPulsecapable | QORVOQorvo, Inc 威訊聯(lián)合威訊聯(lián)合半導(dǎo)體(德州)有限公司 | | | |
4 – 6 GHz, 32 V, 5 W GaN RF Input-Matched Transistor KeyFeatures ?Frequency:4to6GHz ?OutputPower(P3dB)1:6.8W ?LinearGain1:13dB ?TypicalPAE3dB 1:60 ?OperatingVoltage:32V ?CWandPulsecapable | QORVOQorvo, Inc 威訊聯(lián)合威訊聯(lián)合半導(dǎo)體(德州)有限公司 | | | |
12 mm Discrete HFET 12mmDiscreteHFET ?0.5umgatefingerlength ?NominalPoutof6.0Wattsat2.3GHz ?NominalPAEof54.5at2.3GHz ?NominalGainof12.7dBat2.3GHz ?Diesize36.0x81.0x4.0mils(0.914x2.057x0.102mm) | TriQuint TriQuint Semiconductor | | | |
12 mm Discrete HFET 12mmDiscreteHFET ?0.5umgatefingerlength ?NominalPoutof6.0Wattsat2.3GHz ?NominalPAEof54.5at2.3GHz ?NominalGainof12.7dBat2.3GHz ?Diesize36.0x81.0x4.0mils(0.914x2.057x0.102mm) | TriQuint TriQuint Semiconductor | | | |
18 mm Discrete HFET 18mmDiscreteHFET ?0.5umgatefingerlength ?NominalPoutof9.0Wattsat2.3GHz ?NominalPAEof53at2.3GHz ?NominalGainof11.5dBat2.3GHz ?DieSize36.0x81.0x4.0mils(0.914x2.057x0.102mm) | TriQuint TriQuint Semiconductor | | | |
18 mm Discrete HFET 18mmDiscreteHFET ?0.5umgatefingerlength ?NominalPoutof9.0Wattsat2.3GHz ?NominalPAEof53at2.3GHz ?NominalGainof11.5dBat2.3GHz ?DieSize36.0x81.0x4.0mils(0.914x2.057x0.102mm) | TriQuint TriQuint Semiconductor | | | |
24 mm Discrete HFET 24mmDiscreteHFET ?0.5umgatefingerlength ?NominalPoutof12Wattsat2.3GHz ?NominalPAEof51.5at2.3GHz ?NominalGainof10.8dBat2.3GHz ?Diesize36.0x81.0x4.0mils(0.914x2.057x0.102mm) | TriQuint TriQuint Semiconductor | | | |
24 mm Discrete HFET 24mmDiscreteHFET ?0.5umgatefingerlength ?NominalPoutof12Wattsat2.3GHz ?NominalPAEof51.5at2.3GHz ?NominalGainof10.8dBat2.3GHz ?Diesize36.0x81.0x4.0mils(0.914x2.057x0.102mm) | TriQuint TriQuint Semiconductor | | | |
1.2mm Discrete HFET DESCRIPTION TheTriquintTGF4230-EEUisasinglegate1.2mmDiscreteGaAsHeterostructureFieldEffectTransistor(HFET)designedforhigh-efficiencypowerapplicationsupto12-GHzinClassAandClassABoperation. Bond-padandbacksidemetalizationisgoldplatedforcompatibilitywith | TriQuint TriQuint Semiconductor | | | |
1.2mm Discrete HFET DESCRIPTION TheTriquintTGF4230-EEUisasinglegate1.2mmDiscreteGaAsHeterostructureFieldEffectTransistor(HFET)designedforhigh-efficiencypowerapplicationsupto12-GHzinClassAandClassABoperation. Bond-padandbacksidemetalizationisgoldplatedforcompatibilitywith | TriQuint TriQuint Semiconductor | | | |
DC - 12 GHz Discrete HFET Description TheTriQuintTGF4230-SCCisasinglegate1.2mmDiscreteGaAsHeterostructureFieldEffectTransistor(HFET)designedforhigh-efficiencypowerapplicationsupto12GHzinClassAandClassABoperation. Bond-padandbacksidemetalizationisgoldplatedforcompatibilitywithe | TriQuint TriQuint Semiconductor | | | |
2.4mm Discrete HFET ●2400mx0.5m ●NominalPoutof31.5-dBmat8.5GHz ●NominalGainof10-dBat8.5GHz ●NominalPAEof56at8.5GHz ●Suitableforhighreliabilityapplications ●0,572x0,978x0,102mm (0.023x0.039x0.004in.) | TriQuint TriQuint Semiconductor | | | |
2.4mm Discrete HFET ●2400mx0.5m ●NominalPoutof31.5-dBmat8.5GHz ●NominalGainof10-dBat8.5GHz ●NominalPAEof56at8.5GHz ●Suitableforhighreliabilityapplications ●0,572x0,978x0,102mm (0.023x0.039x0.004in.) | TriQuint TriQuint Semiconductor | | | |
2.4 mm Discrete HFET DESCRIPTION TheTriQuintTGF4240-SCCisasinglegate2.4mmDiscreteGaAsHeterostructureFieldEffectTransistor(HFET)designedforhigh-efficiencypowerapplicationsupto12GHzinClassAandClassABoperation. Typicalperformanceat8.5GHzis31.5dBmpoweroutput,10dBGain,and56PA | TriQuint TriQuint Semiconductor | | | |
4.8 mm Discrete HFET Description TheTriQuintTGF4250-SCCisasinglegate4.8mmdiscreteGaAsHeterostructureFieldEffectTransistor(HFET)designedforhighefficiencypowerapplicationsupto10.5GHzinClassAandClassABoperation.Typicalperformanceat2GHzis34dBmpoweroutput,13dBgain,and53PAE | TriQuint TriQuint Semiconductor | | | |
4.8 mm Discrete HFET Description TheTriQuintTGF4250-SCCisasinglegate4.8mmdiscreteGaAsHeterostructureFieldEffectTransistor(HFET)designedforhighefficiencypowerapplicationsupto10.5GHzinClassAandClassABoperation.Typicalperformanceat2GHzis34dBmpoweroutput,13dBgain,and53PAE | TriQuint TriQuint Semiconductor | | | |
DC - 10.5 GHz Discrete HFET Description TheTriQuintTGF4250-SCCisasinglegate4.8mmdiscreteGaAsHeterostructureFieldEffectTransistor(HFET)designedforhighefficiencypowerapplicationsupto10.5GHzinClassAandClassABoperation.Typicalperformanceat2GHzis34dBmpoweroutput,13dBgain,and53PAE | TriQuint TriQuint Semiconductor | | | |
9.6mm Discrete HFET 9.6mmDiscreteHFET ●9600mx0.5m ●NominalPoutof37-dBmat6.0GHz ●NominalGainof9.5-dBat6.0GHz ●NominalPAEof52at6.0GHz ●Suitableforhighreliabilityapplications ●0,572x2,324x0,102mm(0.023x0.092x0.004in.) | TriQuint TriQuint Semiconductor | | | |
9.6mm Discrete HFET 9.6mmDiscreteHFET ●9600mx0.5m ●NominalPoutof37-dBmat6.0GHz ●NominalGainof9.5-dBat6.0GHz ●NominalPAEof52at6.0GHz ●Suitableforhighreliabilityapplications ●0,572x2,324x0,102mm(0.023x0.092x0.004in.) | TriQuint TriQuint Semiconductor | | | |
9.6 mm Discrete HFET Description TheTriQuintTGF4260-SCCisasinglegate9.6mmdiscreteGaAsHeterostructureFieldEffectTransistor(HFET)designedforhighefficiencypowerapplicationsupto10.5GHzinClassAandClassABoperation. KeyFeaturesandPerformance ?9600μmx0.5μmHFET ?NominalPoutof37d | TriQuint TriQuint Semiconductor | | | |
300um Discrete pHEMT KeyFeaturesandPerformance ?0.25umpHEMTTechnology ?DC22GHzFrequencyRange ?1.2dBNF,14.5dBAssociatedGainat10GHz,3VOperation ?FloatingSourceConfiguration ?ChipDimensions0.620mmx0.514mm PrimaryApplications ?LowNoiseamplifiers | TriQuint TriQuint Semiconductor | | | |
300um Discrete pHEMT KeyFeaturesandPerformance ?0.25umpHEMTTechnology ?DC22GHzFrequencyRange ?1.2dBNF,14.5dBAssociatedGainat10GHz,3VOperation ?FloatingSourceConfiguration ?ChipDimensions0.620mmx0.514mm PrimaryApplications ?LowNoiseamplifiers | TriQuint TriQuint Semiconductor | | | |
包裝：盒 描述：THERM PAD 199.9MMX199.9MM GRAY 風(fēng)扇，熱管理 熱 - 墊，片 | Leader Leader Tech Inc. |  | | |
Discrete MESFET 文件：121.39 Kbytes Page：7 Pages | TriQuint TriQuint Semiconductor | | | |
Discrete MESFET 文件：121.39 Kbytes Page：7 Pages | TriQuint TriQuint Semiconductor | | | |
180 um Discrete GaAs pHEMT 文件：245.3 Kbytes Page：8 Pages | TriQuint TriQuint Semiconductor | | | |
180 um Discrete GaAs pHEMT 文件：245.3 Kbytes Page：8 Pages | TriQuint TriQuint Semiconductor | | | |
DC - 12 GHz Discrete power pHEMT 文件：151.19 Kbytes Page：8 Pages | TriQuint TriQuint Semiconductor | | | |
DC - 12 GHz Discrete power pHEMT 文件：151.19 Kbytes Page：8 Pages | TriQuint TriQuint Semiconductor | | | |
DC - 12 GHz Discrete power pHEMT 文件：149.52 Kbytes Page：8 Pages | TriQuint TriQuint Semiconductor | | | |
DC - 20 GHz Discrete power pHEMT 文件：219.3 Kbytes Page：10 Pages | TriQuint TriQuint Semiconductor | | | |
6 Watt Discrete Power GaN on SiC HEMT 文件：445.78 Kbytes Page：8 Pages | TriQuint TriQuint Semiconductor | | | |
6 Watt Discrete Power GaN on SiC HEMT 文件：780.01 Kbytes Page：13 Pages | TriQuint TriQuint Semiconductor | | | |
6 Watt Discrete Power GaN on SiC HEMT 文件：780.01 Kbytes Page：13 Pages | TriQuint TriQuint Semiconductor | | | |
12 Watt Discrete Power GaN on SiC HEMT 文件：222.71 Kbytes Page：7 Pages | TriQuint TriQuint Semiconductor | | | |
12 Watt Discrete Power GaN on SiC HEMT 文件：196.81 Kbytes Page：9 Pages | TriQuint TriQuint Semiconductor | | | |
12 Watt Discrete Power GaN on SiC HEMT 文件：196.81 Kbytes Page：9 Pages | TriQuint TriQuint Semiconductor | | | |
25 Watt Discrete Power GaN on SiC HEMT 文件：221.82 Kbytes Page：7 Pages | TriQuint TriQuint Semiconductor | | | |
25 Watt Discrete Power GaNon SiCHEMT 文件：199.23 Kbytes Page：9 Pages | TriQuint TriQuint Semiconductor | | | |
25 Watt Discrete Power GaNon SiCHEMT 文件：199.23 Kbytes Page：9 Pages | TriQuint TriQuint Semiconductor | | | |
50 Watt Discrete Power GaN on SiC HEMT 文件：221.99 Kbytes Page：7 Pages | TriQuint TriQuint Semiconductor | | | |
50 Watt Discrete Power GaN on SiC HEMT 文件：200.41 Kbytes Page：9 Pages | TriQuint TriQuint Semiconductor | | | |
50 Watt Discrete Power GaN on SiC HEMT 文件：200.41 Kbytes Page：9 Pages | TriQuint TriQuint Semiconductor | | |
TGF產(chǎn)品屬性
- 類型
描述
- 型號
TGF
- 功能描述
導(dǎo)熱接口產(chǎn)品 Thermal Gap Fill Pad
- RoHS
否
- 制造商
Panasonic Electronic Components
- 類型
Thermal Graphite Sheets
- 材料
Graphite Polymer Film
- 長度
180 mm
- 寬度
115 mm
- 厚度
0.07 mm
| IC供應(yīng)商 | 芯片型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
|---|---|---|---|---|---|---|---|
TRIQUIN |
24+ |
SOT-89 |
80000 |
只做自己庫存,全新原裝進口正品假一賠百,可開13%增 |
|||
TRIQUINT |
三年內(nèi) |
1983 |
只做原裝正品 |
||||
TRIQUINT |
22+ |
SOT-89 |
100000 |
代理渠道/只做原裝/可含稅 |
|||
TQS/WJ |
24+ |
NA/ |
3700 |
原裝現(xiàn)貨,當(dāng)天可交貨,原型號開票 |
|||
QORVO |
13+ |
N/A |
30 |
一級代理,專注軍工、汽車、醫(yī)療、工業(yè)、新能源、電力 |
|||
TRIQUINT |
24+ |
SOT-89 |
20000 |
全新原廠原裝，進口正品現(xiàn)貨，正規(guī)渠道可含稅?。?/div> |
|||
QORVO |
24+ |
VQFN |
7850 |
只做原裝正品現(xiàn)貨或訂貨假一賠十! |
|||
TRIQUIN |
20+ |
N/A |
29516 |
高頻管全新原裝主營-可開原型號增稅票 |
|||
Qorvo(威訊聯(lián)合) |
2023+ |
N/A |
4550 |
全新原裝正品 |
|||
QORVO |
24+ |
NA |
12000 |
原裝正品 假一罰十 可拆樣 |
TGF芯片相關(guān)品牌
TGF規(guī)格書下載地址
TGF參數(shù)引腳圖相關(guān)
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- TG-CPCB3-LI98-0.15
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2020-11-25TGM-240NS
型號：TGM-240NS 廠商：HALO 封裝:SOP6 聯(lián)系人：陳先生電話：18018738768（微信同號） QQ：1005525513 我司有一手貨源，價優(yōu)，可以長期提供大量，優(yōu)質(zhì)的貨源，專業(yè)的渠道，物美價廉是公司與客戶之間共同的理念 深圳市弘揚盛電子專業(yè)經(jīng)銷網(wǎng)絡(luò)濾波器，網(wǎng)絡(luò)變壓器，RJ45網(wǎng)絡(luò)連接器系列，USB連接器系列，RJ11插座系類，
2020-4-13
DdatasheetPDF頁碼索引
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