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N-CHANNEL 500V - 0.20ohm - 20A TO-247 MDmesh??ower MOSFET

The MDmesh? is a new revolutionary MOSFET technology that associates the Multiple Drain process with the Company’s PowerMESH horizontal layout. The resulting product has an outstanding low on-resistance, impressively high dv/dt and excellent avalanche characteristics. The adoption of

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 20A@ TC=25℃ ·Drain Source Voltage -VDSS= 500V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 0.25Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

N-CHANNEL 550V @ Tjmax - 0.20? - 20A TO-247 MDmesh? MOSFET

- TYPICAL RDS(on) = 0.20? - HIGH dv/dt AND AVALANCHE CAPABILITIES - 100 AVALANCHE TESTED - LOW INPUT CAPACITANCE AND GATE CHARGE - LOW GATE INPUT RESISTANCE - TIGHT PROCESS CONTROL AND HIGH MANUFACTURING YIELDS DESCRIPTION The MDmesh? is a new revolutionary MOSFET technology that a

N-CHANNEL 500V - 0.22ohm - 20A TO-247 FDmesh??Power MOSFET with FAST DIODE

DESCRIPTION The FDmesh? associates all advantages of reduced on-resistance and fast switching with an intrinsic fast recovery body diode. It is therefore strongly recommended for bridge topologies, in particular ZVS phase shift converters. ■ TYPICAL RDS(on) = 0.22? ■ HIGH dv/dt AND AVAL

Isc N-Channel MOSFET Transistor

文件：324.83 Kbytes Page：2 Pages

20A, 500V N-CHANNEL SUPER-JUNCTION MOSFET

? DESCRIPTION The UTC 20NM50 is a Super Junction MOSFET Structure and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and a high rugged avalanche characteristics. This power MOSFET is usually used at AC-DC converters for power

N-CHANNEL 500V - 0.20ohm - 20A TO-220/FP/D2PAK/I2PAK MDmesh Power MOSFET

DESCRIPTION The MDmesh? is a new revolutionary MOSFET technology that associates the Multiple Drain process with the Company’s PowerMESH? horizontal layout. The resulting product has an outstanding low on-resistance, impressively high dv/dt and excellent avalanche characteristics. The adoption

N-channel 500 V, 0.22 廓, 20 A D2PAK, TO-220FP, TO-220 FDmesh??Power MOSFET

文件：403.2 Kbytes Page：16 Pages

N-channel 500V - 0.20廓 - 20A - TO220/FP-D2PAK-I2PAK MDmesh??Power MOSFET

文件：317.23 Kbytes Page：14 Pages

N-channel 500V - 0.20廓 - 20A - TO220/FP-D2PAK-I2PAK MDmesh??Power MOSFET

文件：317.23 Kbytes Page：14 Pages