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型號 功能描述 生產(chǎn)廠家&企業(yè) LOGO 操作
STP8NC50FP

N-CHANNEL 500V - 0.7ohm - 8A TO-220/TO-220FP/I2PAK PowerMesh??I MOSFET

The PowerMESH II is the evolution of the first generation of MESH OVERLAY. The layout refinements introduced greatly improve the Ron area figure of merit while keeping the device at the leading edge for what concerns swithing speed, gate charge and ruggedness. APPLICATIONS ■ HIGH CURRENT, HIGH

STMICROELECTRONICS

意法半導(dǎo)體

STP8NC50FP

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 8A@ TC=25℃ ·Drain Source Voltage -VDSS= 500V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 0.85Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

ISC

無錫固電

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 8A@ TC=25℃ ·Drain Source Voltage -VDSS= 500V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 0.85Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

ISC

無錫固電

N-CHANNEL 500V - 0.7ohm - 8A TO-220/TO-220FP/I2PAK PowerMesh??I MOSFET

The PowerMESH II is the evolution of the first generation of MESH OVERLAY. The layout refinements introduced greatly improve the Ron area figure of merit while keeping the device at the leading edge for what concerns swithing speed, gate charge and ruggedness. APPLICATIONS ■ HIGH CURRENT, HIGH

STMICROELECTRONICS

意法半導(dǎo)體

N-CHANNEL 500V - 0.7ohm - 8A D2PAK PowerMesh??I MOSFET

DESCRIPTION The PowerMESH?II is the evolution of the first generation of MESH OVERLAY?. The layout refinements introduced greatly improve the Ron*area figure of merit while keeping the device at the leading edge for what concerns swithing speed, gate charge and ruggedness. ■ TYPICAL RDS(on) = 0.

STMICROELECTRONICS

意法半導(dǎo)體

N-CHANNEL 500V - 0.7ohm - 8A TO-220/TO-220FP/I2PAK PowerMesh??I MOSFET

The PowerMESH II is the evolution of the first generation of MESH OVERLAY. The layout refinements introduced greatly improve the Ron area figure of merit while keeping the device at the leading edge for what concerns swithing speed, gate charge and ruggedness. APPLICATIONS ■ HIGH CURRENT, HIGH

STMICROELECTRONICS

意法半導(dǎo)體

STP8NC50FP產(chǎn)品屬性

  • 類型

    描述

  • 型號

    STP8NC50FP

  • 功能描述

    MOSFET N-Ch 500 Volt 8 Amp

  • RoHS

    否

  • 制造商

    STMicroelectronics

  • 晶體管極性

    N-Channel

  • 汲極/源極擊穿電壓

    650 V

  • 閘/源擊穿電壓

    25 V

  • 漏極連續(xù)電流

    130 A 電阻汲極/源極

  • RDS（導(dǎo)通）

    0.014 Ohms

  • 配置

    Single

  • 安裝風(fēng)格

    Through Hole

  • 封裝/箱體

    Max247

  • 封裝

    Tube

更新時間：2025-8-21 8:02:00
IC供應(yīng)商 芯片型號 品牌 批號 封裝 庫存 備注 價格
ST/意法
22+
TO-220F
89547
ST/意法
24+
NA/
325
優(yōu)勢代理渠道,原裝正品,可全系列訂貨開增值稅票
ST
20+
TO-220F
38560
原裝優(yōu)勢主營型號-可開原型號增稅票
ST
23+
TO-220
16900
正規(guī)渠道,只有原裝!
ST
24+
TO-220F
500
原裝現(xiàn)貨熱賣
ST
23+
TO-220F
10000
專做原裝正品,假一罰百!
ST進(jìn)口原裝
23+
TO-220
11200
原廠授權(quán)一級代理、全球訂貨優(yōu)勢渠道、可提供一站式BO
ST
23+
TO-220F
2550
原廠原裝正品
ST/進(jìn)口原
17+
TO-220F
6200
ST
2447
TO-220F
100500
一級代理專營品牌!原裝正品,優(yōu)勢現(xiàn)貨,長期排單到貨

STP8NC50FP芯片相關(guān)品牌

STP8NC50FP規(guī)格書下載地址

STP8NC50FP參數(shù)引腳圖相關(guān)

STP8NC50FP數(shù)據(jù)表相關(guān)新聞

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