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型號 功能描述 生產(chǎn)廠家&企業(yè) LOGO 操作
STP4N100

N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR

N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR ■ TYPICAL RDS(on) = 3.1 ? ■ AVALANCHE RUGGED TECHNOLOGY ■ 100 AVALANCHE TESTED ■ REPETITIVE AVALANCHE DATA AT 100°C ■ LOW INPUT CAPACITANCE ■ LOW GATE CHARGE ■ APPLICATION ORIENTED CHARACTERIZATION APPLICATIONS ■ HIGH CURRENT, HIGH SPEED

STMICROELECTRONICS

意法半導(dǎo)體

STP4N100

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 4A@ TC=25℃ ·Drain Source Voltage -VDSS= 1000V(Min) ·Static Drain-Source On-Resistance； -RDS(on) = 3.5Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

ISC

無錫固電

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 2.2A@ TC=25℃ ·Drain Source Voltage -VDSS= 1000V(Min) ·Static Drain-Source On-Resistance； -RDS(on) = 3.5Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

ISC

無錫固電

N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR

N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR ■ TYPICAL RDS(on) = 3.1 ? ■ AVALANCHE RUGGED TECHNOLOGY ■ 100 AVALANCHE TESTED ■ REPETITIVE AVALANCHE DATA AT 100°C ■ LOW INPUT CAPACITANCE ■ LOW GATE CHARGE ■ APPLICATION ORIENTED CHARACTERIZATION APPLICATIONS ■ HIGH CURRENT, HIGH SPEED

STMICROELECTRONICS

意法半導(dǎo)體

null4.0A, 1000V N-CHANNEL POWER MOSFET

? DESCRIPTION The UTC 4N100-FC provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device suitable for use as a load switch or in PWM applications. ? FEATURES0 * RDS(ON) ≤ 6.0 Ω @ VGS=10V, ID=2.0A * Low Reverse Transfer Capacitance * Fast Switching Capabi

UTC

友順

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 4A@ TC=25℃ ·Drain Source Voltage : VDSS= 1000V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 3.3Ω(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-D

ISC

無錫固電

N-Channel Enhancement Mode MOSFET

文件：257.35 Kbytes Page：4 Pages

DACO

罡境電子

Power MOSFET

文件：270.9 Kbytes Page：5 Pages

IXYS

艾賽斯

Polar HiPerFET Power MOSFET

文件：157.57 Kbytes Page：4 Pages

IXYS

艾賽斯

STP4N100產(chǎn)品屬性

  • 類型

    描述

  • 型號

    STP4N100

  • 制造商

    STMICROELECTRONICS

  • 制造商全稱

    STMicroelectronics

  • 功能描述

    N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR

更新時(shí)間：2025-9-10 23:01:00
IC供應(yīng)商 芯片型號 品牌 批號 封裝 庫存 備注 價(jià)格
ST/意法
24+
NA/
250
優(yōu)勢代理渠道,原裝正品,可全系列訂貨開增值稅票
ST
23+
NA
8000
全新原裝假一賠十
ST
20+
TO-220
38900
原裝優(yōu)勢主營型號-可開原型號增稅票
ST
1249+
TO-220
250
一級代理,專注軍工、汽車、醫(yī)療、工業(yè)、新能源、電力
ST
25+
TO-220F
16900
原裝，請咨詢
ST
23+
TO-220
10000
專做原裝正品,假一罰百!
ST
06+
TO-220
10000
全新原裝 絕對有貨
ST全系列
25+23+
TO-220
26512
絕對原裝正品全新進(jìn)口深圳現(xiàn)貨
ST
24+
TO-220
2500
原裝現(xiàn)貨熱賣
ST
23+
TO-220
8795

STP4N100芯片相關(guān)品牌

STP4N100規(guī)格書下載地址

STP4N100參數(shù)引腳圖相關(guān)

STP4N100數(shù)據(jù)表相關(guān)新聞

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