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N-Channel 30-V (D-S) MOSFET

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N - CHANNEL ENHANCEMENT MODE ??LTRA HIGH DENSITY??POWER MOS TRANSISTOR

■ TYPICAL RDS(on) = 0.016 ? ■ AVALANCHE RUGGED TECHNOLOGY ■ 100 AVALANCHE TESTED ■ HIGH CURRENT CAPABILITY ■ 175oC OPERATING TEMPERATURE ■ HIGH dV/dt CAPABILITY ■ APPLICATION ORIENTED CHARACTERIZATION APPLICATIONS ■ HIGH CURRENT, HIGH SPEED SWITCHING ■ POWER MOTOR CONTROL ■ DC-DC & D

N-Channel 30-V (D-S) MOSFET

文件：984.48 Kbytes Page：7 Pages

N - CHANNEL ENHANCEMENT MODE ”ULTRA HIGH DENSITY” POWER MOS TRANSISTOR

Low Gate Charge Simple Drive Requirement

Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220 package is widely preferred for all commercial-industrial applications and suited for low voltage applica

N CHANNEL ENHANCEMENT MODE POWER MOSFET

Power MOSFETs from Silicon Standardprovide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220 package is widelypreferred for commercialand industrial applications and suited for low voltage applications su

N-Channel 30-V (D-S) MOSFET

FEATURES ? Halogen-free ? TrenchFET? Gen III Power MOSFET ? 100 Rg Tested ? 100 UIS Tested APPLICATIONS ? DC/DC Conversion - System Power

Fast Switching Characteristic

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N-Channel 30-V (D-S) MOSFET

文件：959.97 Kbytes Page：8 Pages